2D TMD-PECVD
Nano-crystalline + Memristor = "Nanoristor"
Nanograin 4-in MoS2 by PECVD
Plasma-H2S/Ar ratio 50/10, 50/50, 10/10
C-AFM for filmament of Memristor (HRS, LRS)
J. Mater. Chem. C 2024
Formation of MP-WS2 and 2H-WS2 depending on synthesis temperature via plasma-assisted sulfidation
Temperature dependent phase ratio of WS2
Sheet resistance variation depending phase of WS2
Small Science 2024 4, 2300202
(Front Cover)
3 mixed gases plasma etching
Physical + chemical plasma etching
Numerical calculation
Chemistry of Materials 2023 35, 1016-1028
(Cover)
특허등록 KR10-2581832
Tailoring polymorphic Heterostructuer of TMD-TMD
1T/1T, 2H/2H-MoS2-WS2 (4 cases)
Comparison of HER application
ACS Sustainable Chemistry & Engineering 2023 11, 568-577
A stable 1T phase-plasma synthesis
Classification of 1T, 2H phase TMDc
Synthesis methods review
Nanoscale Advances 2022 4, 2962
(Front Cover)
Direct fabrication of WS2/Graphene on polyimide (PI) substrate
Patterned Au electrode on PI
Process temp. at 150 oC is possible to direct synthesize
Small 2021 17, 2102757
(Inside Front Cover)
One-step fabrication of MoS2-WS2 heterostructure from Mo-W metal layers
Time-dependence observation for Plasma synthesis
ACS Nano 2021 15, 707-718
특허등록 KR10-2322800
특허등록 US11,735,417
First succeed to synthesize Meta-stable phase (1T)-MoS2
All phase of TMDs group (WS2, MoS2) can be synthesized depending on temperature
ChemSusChem 2021 14, 1344-1350
The first bottom-up approach for Large scale of 1T-WS2
Originally Meta-stable of 1T-WS2 can make as stable with nano-grain size of 1T-WS2
4-inch 1T-WS2 with high uniformity
Small 2020 16, 1905000
(Back Cover)
특허등록 KR10-2387536
특허출원 US17/322,450
Transfer CVD grown Graphene on SiO2/Si
Mo metal layer deposition using E-beam evaporator with 1 nm
H2S + Ar (1:1 ratio) plasma treatment for sulfurization at 300 oC
The largest size of heterostructure with 4-inch wafer scale
Applied Surface Science 2019 470, 129-134
특허등록 KR10-2343399
특허등록 US11,508,576
Oxygen plasma treat to Mo metal layer (30 nm) for MoO3
4-inch scale of a-MoO3
Nanotechnology 2015 175601
4-inch Scale of MoS2
The first attempt for synthesis of 2H-MoS2 using PE-CVD (Plasma enhanced chemical vapor deposition)
H2S + Ar (1:1 ratio) plasma treatment to Molybdenum metal layer for sulfurization at Low temperature
Advanced Materials 2015 27, 5223-5229
특허등록 KR10-1529788
특허출원 US14/565,885