2D TMD-PECVD

•  The introduced multi-scale approach included plasma diagnostics, kinetic modeling, and atomic simulation that can link plasma behavior, supported by experimental validation

• The findings establish fundamental workflow for plasma-based processing of 2D materials, delivering deep understanding of how plasma drives surface reactions and phase evolution

                             Submitted 2025 

•  Vertically Aligned TiS2 layer (VATL) synthesized via PECVD

• TiS2 acts as robust diffusion barrier

• Exposed dege sites of the vertical orientation facilitate efficient electronic coupling with the electrode, thereby enhancing carrier injection

                             Submitted 2025 

• PECVD synthesis of meta-stable 1T-MoS2 & 2H-MoS2 depending on thickness of metal seed layer

• Strain engineering through PECVD drives phase stabilization

• 1T-MoS2 acts as high-performance floating gate

• 1T-MoS2 exhibit optoelectronic synaptic functionality

Small Methods 2025 e2500200

• Provides a comprehensive understanding of the interplay between the electronic structure of WS2 basal plane and the HER activity, focusing on optimizing S-H bonding state

• Established a strategy for optimizing the S-H bonding states on the WS2 basal plane

• Comparision 1T, 2H-WS2-graphene heterostructure

Advanced Materials 2025 37 (26) 2411211

특허등록 US12,129,547

(Front Cover)

• Fabricate 4 distinct phases of MoS2 heterostructures

• 4-in MoS2 heterostructures by 2 steps with PECVD

• Exploring energy barriers at their junctions

Energy & Environmental Materials 2025 8 (1) e128000

• Nano-crystalline + Memristor = "Nanoristor"

• Nanograin 4-in MoS2 by PECVD

• Plasma-H2S/Ar ratio 50/10, 50/50, 10/10

• C-AFM for filmament of Memristor (HRS, LRS)

Journal of Materials Chemistry C  2024 12, 6350-6358

• Formation of MP-WS2 and 2H-WS2 depending on synthesis temperature via plasma-assisted sulfidation

• Temperature dependent phase ratio of WS2

• Sheet resistance variation depending phase of WS2

Small Science 2024 4, 2300202

(Front Cover)

• 3 mixed gases plasma etching

• Physical + chemical plasma etching

• Numerical calculation

Chemistry of Materials 2023 35, 1016-1028

(Cover)

특허등록 KR10-2581832

• Tailoring polymorphic Heterostructuer of TMD-TMD

• 1T/1T, 2H/2H-MoS2-WS2 (4 cases)

• Comparison of HER application

ACS Sustainable Chemistry & Engineering 2023 11, 568-577

• A stable 1T phase-plasma synthesis

• Classification of 1T, 2H phase TMDc

• Synthesis methods review 

Nanoscale Advances 2022 4, 2962

(Front Cover)

• Direct fabrication of WS2/Graphene on polyimide (PI) substrate

• Patterned Au electrode on PI

• Process temp. at 150 C is possible to direct synthesize 

Small 2021 17, 2102757 

(Inside Front Cover)

• One-step fabrication of MoS2-WS2 heterostructure from Mo-W metal layers

• Time-dependence observation for Plasma synthesis 

ACS Nano 2021 15, 707-718

특허등록 KR10-2322800

특허등록 US11,735,417

• First succeed to synthesize Meta-stable phase (1T)-MoS2

• All phase of TMDs group (WS2, MoS2) can be synthesized depending on temperature

ChemSusChem 2021 14, 1344-1350

• The first bottom-up approach for Large scale of 1T-WS2

• Originally Meta-stable of 1T-WS2 can make as stable with nano-grain size of 1T-WS2

• 4-inch 1T-WS2 with high uniformity

Small 2020 16, 1905000 

(Back Cover)

특허등록 KR10-2387536

특허등록 US12,129,547

• Transfer CVD grown Graphene on SiO2/Si 

• Mo metal layer deposition using E-beam evaporator with 1 nm 

• H2S + Ar (1:1 ratio) plasma treatment for sulfurization at 300 C

• The largest size of heterostructure with 4-inch wafer scale

Applied Surface Science 2019 470, 129-134

특허등록 KR10-2343399

특허등록 US11,508,576

• Oxygen plasma treat to Mo metal layer (30 nm) for MoO3

• 4-inch scale of a-MoO3 

Nanotechnology 2015 175601

• 4-inch Scale of MoS2

• The first attempt for synthesis of 2H-MoS2 using PECVD (Plasma enhanced chemical vapor deposition)

• H2S + Ar (1:1 ratio) plasma treatment to Molybdenum metal layer for sulfurization at Low temperature

Advanced Materials 2015 27, 5223-5229

특허등록 KR10-1529788

특허출원 US14/565,885