Awards & recognitions

Best paper awards:

  • ANTS Best Poster Award 2015
    The paper “Self-Heating Characterization of SOI FinFETs using 2D Time-Resolved Emission” was voted the best poster at the Albany Nanotechnology Symposium, Albany, NY.
  • Paul F. Forman Team Engineering Excellence Award 2015
    The Optical Society (OSA) awarded the work for the development and characterization of the Logical Analysis Tool that detects photon emissions from integrated circuits fabricated in advanced process technologies with operating voltages down to 0.5V.
    Since 1989, OSA has presented the Engineering Excellence Award annually to recognize teams who have made major contributions in optical engineering, such as product engineering, process and software development, and patent development, as well as contributions to society such as engineering education, publication and management, and furthering public appreciation of optical engineering. 
  • ISTFA Best Poster Award 2014
    The paper “Applications and Techniques for 2D Picosecond Imaging for Circuit Analysis” was voted the best poster at the Proc. of International Symposium for Testing and Failure Analysis (ISTFA), Houston, TX.
  • AMD/CICC Student Scholarship Award 2008
    The paper “A High Sensitivity Process Variation Sensor Utilizing Sub-threshold Operation” was one of the highest rated student papers submitted at the  Custom Integrated Circuits Conference (CICC), San Jose, CA.
  • IEEE-EDS Paul Rappaport Award 2004
    The paper “Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current” was voted the best paper appeared among the 330 papers published on the IEEE Transaction on Electron Devices in 2004.
    This award was established in 1984 to honor the author(s) of the best paper that has appeared in an IEEE Electron Device Society (EDS) publication in the preceding calendar year. It is presented annually at the International Electron Devices Meeting (IEDM). 
  • ESREF Best Paper Award 2004
    The paper “Testing of Ultra Low Voltage VLSI Chips using the Superconducting Single-Photon Detector (SSPD)” was voted the best paper at the European Symposium Reliability of Electron Devices, Failure (ESREF), Zurich, Switzerland.
  • ESREF Best Paper Award 2002
    The paper “Optical diagnosis of excess IDDQ in low power CMOS circuits” was voted the best paper at the European Symposium Reliability of Electron Devices, Failure (ESREF), Rimini, Italy.

IBM internal awards:

  • A-level Accomplishment Award 2014
  • Outstanding Technical Achievement Award in 2014
  • Research Division Technical Group Award in 2003
  • The IBM Research Division Technical Group Awards was established to recognize leadership, rapid execution and exceptional teamwork in today’s business environment.
    The award recognizes contributions to inventing and utilizing a new emission technique for eliminating latchup problems in CMOS technologies. 
  • Patent Plateaus in 2005 (1st), 2008 (2nd, 3rd), 2010 (4th), ..., 2014 (7th)
  • The award is issued on the forth filed patent application and recognizes innovation capabilities.
  • Bravo! Award in 2003 and 2004
    The award is a monetary prize from the management to recognize exceptional commitment, contributions and results on a technical issue relating IBM products.
  • Thanks! Award in 2004 (1), 2005 (2), 2006 (3), 2007 (2), and 2008 (1)
    The award is issued from peers in recognition of exceptional help provided to them in their research activities, above and beyond normal team collaboration.

Additional external recognitions:

  • Stellari's animation methodology for lathcup testing
    The methodology that we developed in 2003 to study latch-up ignition and propagation by using time-integrated emission measurements has been recently reported as "Stellari's animation methodology" in the book "Latchup" by S.H. Voldman (John Wiley, 2007).  The author reports that the techniques allows for better visual understanding of the latch-up ignition with a greater time resolution compared to the standard JDEC78 technique.  The latchup propagation phenomenon is controlled and studied by limiting the injection current and taking subsequent time integrated images of the emission due to carrier recombination.  Additional results presented in our previous papers have also been reported.

    Last updated on 2015-11-11