4. Yu-Jui Wu (吳O叡), Quantum Transport in Group-IV Heterostructures, Nov. 2024.

3. Chia-You Liu (劉O佑), Optical, Tunneling, and Carrier Transport Properties in GeSn Epitaxial Films, Feb. 2023.

2. Wei-Chih Hou (侯O志), Quantum Tunneling in Semiconductor Heterostructure for Logic and Memory Applications, Jan. 2022.

1. Yen Chuang (莊O), High Electron Mobility in Strained GeSn n-MOSFETs by Chemical Vapor Deposition, Jan. 2021.

31. Yi-Tzu Wang (王O慈), Cryogenic characteristics of HZO-based ferroelectric capacitors and ferroelectric field-effect transistors, May 2025.

30. Hao-Yang Wu (吳O陽), MoS2 ferroelectric field-effect transistors for memory applications, Apr. 2025.

29. En Chen (陳O), Effects of germanium and phosphorus diffusion on nanoosheet field-effect transistors, Jan. 2025.

28. Yu-Cheng Li (李O呈), Simulation of Quantum Dots in Group-IV Heterostructures, Dec. 2024.

27. Jason Huang (黃O瑋), PN junctions and bipolar junction transistors on Group-IV Heterostructures, Aug. 2024.

26. Jessica Ho (何O凌), SPICE modeling of Cryo-CMOS and Amplifiers for Quantum Computing, July 2024.

25. Yao Su (蘇O), Superductor and Semiconductor Interfaces, Apr. 2024.

24. Wei-Che Hsu (許O哲), Superconductivity of Tantalum Thin Films, Apr. 2024.

23. Chen-Yao Liao (廖O嶢), Implant Isolation for cryo-CMOS and quantum devices, Jan. 2024.

22. Che-Hao Chang (張O豪), Design of Micromagnets for Spin Qubit Control, Dec. 2023.

21. Shih-Chieh Su (蘇O傑), Fabrication of 2D/3D Heterojunction Tunnel Field-Effect Transistors, Nov. 2023.

20. Rui-Jun Wu (吳O濬), Effects of Fabrication Processes and Measurement Ambience on Electron Transport of Tin Disulfide, May 2023.

19. Chih-Li He (何O力), Fabrication and Characterization of n-type GeSn FETs, April 2023.

18. Tsung-Ying Li (李O穎), Quantized Conductance in GeSn/Ge Heterostructures Nanoscale Devices, Nov. 2022.

17. Tz-Ming Wang (汪O茗), Material and Electrical Analysis for Two Dimensional Electron Gases in Undoped Si/SiGe Heterostructures, Sep. 2022.

16. Yi-Chieh Chen (陳O潔), Experimental Characterization and First-Principles Calculation of GeSn/Oxide Interfaces, July 2022.

15. Kai-Ying Tian (田O瑩), Electron Transport and Simulation of Band Structures of GeSn Alloys, June 2022.

14. Yao-Chun Chang (張O均), Electron-Spin-Resonance Meanderlines for Effecetive Spin Control in Si Quantum Dots for Large-Scale Qubit Applications, Jan. 2022.

13. Chih-Ying Chiang (姜O穎), Device Fabrication and Characterization of Si-Based Quantum Dots, Sep. 2021. 

12. Chia-Tse (戴O澤), Rashba Spin-Orbit Coupling and Effective Mass of Two-Dimensional Hole Gases in GeSn/Ge Heterostructures, Jan. 2021. 

11. Po-Yuan Chiu (邱O元), Magneto-Transport and Effective Mass of Two-Dimensional Hole Gases in Ge and GeSn Quantum Wells, Mar. 2020.

10. Li-Yun Liu (劉O耘), Fabrication and Characterization of N-Type GeSn Inversion Mode and Junctionless Mode FinFETs, Jan. 2020.

9. Nai-Wen Hsu (許O文), Cryogenic Non-Volatile Memory Devices Based on Undoped Si/SiGe Heterostructures, Jan. 2020.

8. Chia-You Liu (劉O佑), Fabrication and Characterization of GeSn n+/p Diodes with High Jon/Joff Ratios, Feb. 2019.

7. Ching-Tsung Huang (黃O琮), Band Structure Simulation and Photoluminescence of GeSn Alloys, Jan. 2018. 

6. Tzu-Hung Liu (劉O弘), Fabrication and Characterization of High-Mobility GeSn n-MOSFETs, Jan. 2018.

5. Yi-Hsin Su (蘇O炘), Effects of Surface Tunneling in Undoped Si/SiGe and Ge/GeSi Heterostructures, Oct. 2017.

4. Hsien-Chih Huang (黃O誌), Characterization of Nickel/n-Germanium-Tin Interface and Contact Resistivity, July 2017. 

3. Pao-Chuan Shih (施O全), High-Performance In(Ga)As/Ga(As)Sb Heterojunction Tunneling Devices for Steep-Subthreshold-Slope Applications, July 2017. 

2. Kuan-Yu Chou (周O宇), DC and AC Characteristics of Two-Dimensional Electron Gases in Undoped Silicon/Silicon Germanium Heterostructures, Dec. 2016.

1. De-Hau Lung (龍O浩), Ion Implant Isolation for Quantum Tunneling Devices, Nov. 2015.