4. Yu-Jui Wu (吳O叡), Quantum Transport in Group-IV Heterostructures, Nov. 2024.

3. Chia-You Liu (劉O佑), Optical, Tunneling, and Carrier Transport Properties in GeSn Epitaxial Films, Feb. 2023.

2. Wei-Chih Hou (侯O志), Quantum Tunneling in Semiconductor Heterostructure for Logic and Memory Applications, Jan. 2022.

1. Yen Chuang (莊O), High Electron Mobility in Strained GeSn n-MOSFETs by Chemical Vapor Deposition, Jan. 2021.

34. Yu-Hsuan Huang (黃O瑄), Cryogenic characteristics and 1/f noise analysis of Si and SiGe heterostructure metal-oxide-semiconductor field-effect transistors, Jan. 2026.

33. Wei-Hsiang Kao (高O翔), Effects of phosphorus diffusion on nanosheet transistors, Oct. 2025.

32. Yen-Yang Chen (陳O洋), Electron transport in Ge(Sn) metal-oxide-semiconductor field-effect transistors at cryogenic temperatures, June 2025.

31. Yi-Tzu Wang (王O慈), Cryogenic characteristics of HZO-based ferroelectric capacitors and ferroelectric field-effect transistors, May 2025.

30. Hao-Yang Wu (吳O陽), MoS2 ferroelectric field-effect transistors for memory applications, Apr. 2025.

29. En Chen (陳O), Effects of germanium and phosphorus diffusion on nanoosheet field-effect transistors, Jan. 2025.

28. Yu-Cheng Li (李O呈), Simulation of Quantum Dots in Group-IV Heterostructures, Dec. 2024.

27. Jason Huang (黃O瑋), PN junctions and bipolar junction transistors on Group-IV Heterostructures, Aug. 2024.

26. Jessica Ho (何O凌), SPICE modeling of Cryo-CMOS and amplifiers for quantum computing, July 2024.

25. Yao Su (蘇O), Superductor and semiconductor interfaces, Apr. 2024.

24. Wei-Che Hsu (許O哲), Superconductivity of tantalum thin films, Apr. 2024.

23. Chen-Yao Liao (廖O嶢), Implant isolation for cryo-CMOS and quantum devices, Jan. 2024.

22. Che-Hao Chang (張O豪), Design of micromagnets for spin qcubit Control, Dec. 2023.

21. Shih-Chieh Su (蘇O傑), Fabrication of 2D/3D Heterojunction Tunnel Field-Effect Transistors, Nov. 2023.

20. Rui-Jun Wu (吳O濬), Effects of Fabrication Processes and Measurement Ambience on Electron Transport of Tin Disulfide, May 2023.

19. Chih-Li He (何O力), Fabrication and characterization of n-type GeSn FETs, April 2023.

18. Tsung-Ying Li (李O穎), Quantized conductance in GeSn/Ge heterostructures nanoscale devices, Nov. 2022.

17. Tz-Ming Wang (汪O茗), Material and electrical analysis for two dimensional electron gases in undoped Si/SiGe heterostructures, Sep. 2022.

16. Yi-Chieh Chen (陳O潔), Experimental characterization and First-Principles calculation of GeSn/Oxide interfaces, July 2022.

15. Kai-Ying Tian (田O瑩), Electron transport and simulation of band structures of GeSn alloys, June 2022.

14. Yao-Chun Chang (張O均), Electron-spin-resonance meanderlines for effecetive spin control in Si quantum dots for Llarge-scale qubit applications, Jan. 2022.

13. Chih-Ying Chiang (姜O穎), Device fabrication and characterization of Si-based quantum dots, Sep. 2021. 

12. Chia-Tse (戴O澤), Rashba spin-orbit coupling and effective mass of two-dimensional hole gases in GeSn/Ge heterostructures, Jan. 2021. 

11. Po-Yuan Chiu (邱O元), Magneto-transport and effective mass of two-dimensional hole gases in Ge and GeSn quantum wells, Mar. 2020.

10. Li-Yun Liu (劉O耘), Fabrication and characterization of N-Type GeSn inversion mode and junctionless mode FinFETs, Jan. 2020.

9. Nai-Wen Hsu (許O文), Cryogenic non-Volatile memory devices based on undoped Si/SiGe heterostructures, Jan. 2020.

8. Chia-You Liu (劉O佑), Fabrication and characterization of GeSn n+/p diodes with high Jon/Joff ratios, Feb. 2019.

7. Ching-Tsung Huang (黃O琮), Band structure simulation and photoluminescence of GeSn alloys, Jan. 2018. 

6. Tzu-Hung Liu (劉O弘), Fabrication and characterization of high-mobility GeSn n-MOSFETs, Jan. 2018.

5. Yi-Hsin Su (蘇O炘), Effects of surface tunneling in undoped Si/SiGe and Ge/GeSi heterostructures, Oct. 2017.

4. Hsien-Chih Huang (黃O誌), Characterization of nickel/n-germanium-tin interface and contact resistivity, July 2017. 

3. Pao-Chuan Shih (施O全), High-performance In(Ga)As/Ga(As)Sb heterojunction tunneling devices for steep-subthreshold-slope applications, July 2017. 

2. Kuan-Yu Chou (周O宇), DC and AC Characteristics of two-dimensional electron gases in undoped silicon/silicon germanium heterostructures, Dec. 2016.

1. De-Hau Lung (龍O浩), Ion implant isolation for quantum tunneling devices, Nov. 2015.