US Patents
Jiun-Yun Li, Shih-Yuan Chen, Yao-Chun Chang, Ian Huang, and Chiung-Yu Chen, “Nanoscale meander ESR lines for fast, low-noise, and large-scale spin qubit control,” USP 11934916, Mar. 2024.
S. Y. Chen, Jiun-Yun Li, R. F. Xu, C. Y. Chen, T. I. Yeh, Yu-Jui Wu, and Yao-Chun Chang, “Micro-loop resonator for low-noise control of spin-based qubit,” US Patent No: USP11276653, Mar. 15, 2022.
Jiun-Yun Li, Pao-Chuan Shih, and Wei-Chih Hou, “Vertical tunnel field-effect transistor with U-shaped gate and band aligner,” US Patent No: USP11245011, Feb. 8, 2022.
L. H. Peng, Jiun-Yun Li, J. W. Peng, and Po-Yuan Chiu, “Substrate with lithium imide layer, led with lithium imide layer and manufacturing method thereof,” US Patent No.20180062024 A1, Mar. 1, 2018.
M. Y. Yan, J. Y. Lu, H. C. Huang, Y. S. Li, Jiun-Yun Li, I. C. Cheng, C. M. Lai, Y. L. Huang, L. H. Peng, “Memory cell with functions of storage element and selector,” US Patent No. 9,786,842 B1, Oct. 10, 2017.