Li Research Group at NTUEE
Ｑuantum Electronics Laboratory for Future Computing
Welcome to Li Group!
The Li group (Quantum Electronics Laboratory, QEL) focuses on quantum physics and electronic/spintronic/optoelectronic device applications for future computing. Computing demands become more and more as AI and IoT technology becomes reality. To continue Moore's law for more transistor counts per area, novel technology for sub-2 nm node and beyond would be required such as quantum bit (qubit) devices. To realize solid-state qubit devices, semiconductor quantum dots (QDs) or superconducting transmon devices are promising candidates. For QDs quantum computing, spin-orbit coupling (SOC) can be used for fast switching qubit operations or spin logic (FET) devices. On ther other hand, Si photonics is becoming a solution to big-data processing. Direct-bandgap GeSn is promising due to its efficient light emission, detections, and high mobility transport. Our group is focusing on quantum device applications enabled by GeSn and 2D (transitional metal dichalcogenide, TMD) materials.
Recruit students at undergraduate or graduate (both master and phd) level on (i)、advanced logic and memory devices (前瞻邏輯與記憶體元件)，(ii)、RF cryo-CMOS (低溫高頻CMOS技術)，(iii)、silicon photonics (矽光子)，(iv)、semiconductor/superconductor quantum computing (半導體/超導體量子計算)，(v)、2D materials to join QEL lab!
Congratulations to Wei-Che (許瑋哲) for his successful master thesis defense!
Congratulations to Yao (蘇遙) for his successful master thesis defense!
恭喜大學部專題生尤翊安、林意程、紀皓凱獲得112學年度下學期台積電獎學金。
Congratulations to Che-Hao's paper on spin control via EDSR for quantum computing accepted by IEEE Electron Device Letters！
Welcome our new phd student Muskan Sangal from India!
Congratulations to Cheng-Yao (廖宸嶢) for his successful master thesis defense!
Congratulations to QEL's first review paper (invited) accepted by Materials for Quantum Technology！
Congratulations to Che-Hao (張哲豪) for his successful master thesis defense!
恭喜畢業校友劉家佑博士榮獲112學年度台大科林博士論文頭等獎！
Che-Hao Chang, et al., “A hyperbolic micromagnet for multiple spin qubits with fast Rabi oscillations and high addressability,” IEEE Electron Device Letters, vol. 45, no. 4, pp. 526 – 529, April 2024.
Chia-Tse Tai and Jiun-Yun Li, “Recent progress in undoped group-IV heterostructures for quantum technologies,” Materials for Quantum Technology, vol. 4, p. 012001, Mar. 2024. (review paper)
Chia-You Liu, et al., "Room temperature negative differential resistance and high tunneling current density in GeSn Esaki diodes," Advanced Materials, vol. 34, no. 41, p. 2203888, Oct. 2022.
Wei-Chih Hou, et al., “Cryogenic Si/SiGe heterostructure flash memory devices,” ACS Applied Electronic Materials, vol. 4, no. 6, pp. 2879 – 2884, June 2022.
Nai-Wen Hsu, et al., "Temperature dependence of charge distributions and carrier mobility in an undoped Si/SiGe heterostructure," IEEE Transactions on Electron Devices, vol. 69, no. 2, pp. 482 – 486, Feb. 2022.
Contact Us:
E-mail: jiunyun@ntu.edu.tw
Phone: +886-2-33663700 ext. 437 or 433
Address: 1 Sec. 4, Roosevelt Rd., Da-An Dist., Taipei 10617, Taiwan
Labs: 437 at EE-2 Building, 116 at MediaTeK Building, and 725 at Min-Da Building, Department of Electrical Engineerg, National Taiwan University