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Welcome to Li Group!
The Li group (Quantum Electronics Laboratory, QEL) focuses on quantum physics and electronic/spintronic/optoelectronic device applications for future computing. Computing demands become more and more as AI and IoT technology becomes reality. To continue Moore's law for more transistor counts per area, novel technology for sub-2 nm node and beyond would be required such as quantum bit (qubit) devices. To realize solid-state qubit devices, semiconductor quantum dots (QDs) or superconducting transmon devices are promising candidates. For QDs quantum computing, spin-orbit coupling (SOC) can be used for fast switching qubit operations or spin logic (FET) devices. On ther other hand, Si photonics is becoming a solution to big-data processing. Direct-bandgap GeSn is promising due to its efficient light emission, detections, and high mobility transport. Our group is focusing on quantum device applications enabled by GeSn and 2D (transitional metal dichalcogenide, TMD) materials.
Recruit students at undergraduate or graduate (both master and phd) level on (i)、advanced logic and memory devices (前瞻邏輯與記憶體元件)，(ii)、Cryo-CMOS devices (極低溫CMOS元件)，(iii)、semiconductor/superconductor quantum computing (半導體/超導體量子計算)，(iv)、silicon photonics (矽光子)，(v)、2D FETs (二維材料電晶體) to join the QEL lab!
Congratulations to Yi-Tzu Wang (王O慈) for her successful master thesis defense!
Congratulations to Hao-Yang Wu (吳O陽) for his successful master thesis defense!
Congratulations to Kai-Ying's paper on electron mobility in n-GeSn films published in Advanced Electronic Materials！
Congratulations to Yu-Cheng's paper on Si-based QD design guideline for spin qubits published in Applied Physics Letters！
Congratulations to En Chen (陳O) for his successful master thesis defense!
Congratulations to Che-Hao for his best thesis (master) award in NTU GIEE!
Congratulations to Yu-Cheng (李O呈) for his successful master thesis defense!
Kai-Ying Tien, et al., "Extremely high electron mobility in GeSn epitaxial films by chemical vapor deposition," Advanced Electronic Materials, vol. 11, p. 2400925, Apr. 2025.
Yu-Cheng Li, et al., "Design guidelines for Si metal-oxide-semiconductor and Si/SiGe heterostructure quantum dots for spin qubits," Applied Physics Letters, vol. 126, no. 2, p. 063502, Feb. 2025.
Yu-Jui Wu, et al., "Transient characteristics of carrier transport in an isotopically-enriched 28Si/SiGe undoped heterostructure," Applied Physics Letters, vol. 125, no. 9, p. 093506, Aug. 2024.
Che-Hao Chang, et al., “A hyperbolic micromagnet for multiple spin qubits with fast Rabi oscillations and high addressability,” IEEE Electron Device Letters, vol. 45, no. 4, pp. 526 – 529, April 2024.
Chia-Tse Tai and Jiun-Yun Li, “Recent progress in undoped group-IV heterostructures for quantum technologies,” Materials for Quantum Technology, vol. 4, p. 012001, Mar. 2024. (review paper)
Contact Us:
E-mail: jiunyun@ntu.edu.tw
Phone: +886-2-33663700 ext. 437 or 433
Address: 1 Sec. 4, Roosevelt Rd., Da-An Dist., Taipei 10617, Taiwan
Labs: 437 at EE-2 Building, 116 at MediaTeK Building, and 725 at Min-Da Building, Department of Electrical Engineerg, National Taiwan University
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