Yu-Jui Wu, Hung-Yu Tsao, Chen-Yao Liao, Wei-Hsiang Kao, Chia-You Liu, and Jiun-Yun Li, "Transient characteristics of carrier transport in an isotopically-enriched 28Si/SiGe undoped heterostructure," Applied Physics Letters, vol. 125, no. 9, p. 093506, Aug. 2024. DOI

Che-Hao Chang, Yu-Cheng Li, Yu-Jui Wu, Chen-Yao Liao, Min-Jui Lin, Hung-Yu Tsao, and Jiun-Yun Li, “A hyperbolic micromagnet for multiple spin qubits with fast Rabi oscillations and high addressability,” IEEE Electron Device Letters, vol. 45, no. 4, p. 526 – 529, Apr. 2024. DOI

Chia-Tse Tai and Jiun-Yun Li, “Recent progress in undoped group-IV heterostructures for quantum technologies,” Materials for Quantum Technology, vol. 4, no. 1, p. 012001, Mar. 2024. DOI (topical review)

Chia-You Liu, Kai-Ying Tien, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li, "Room-temperature negative differential resistance and high tunneling current density in GeSn Esaki diodes," Advanced Materials, vol. 34, no. 41, p. 2203888, Oct. 2022. DOI

A. J. Miller, M. Brickson, W. J. Hardy, Chia-You Liu, Jiun-Yun Li, A. Baczewski, M. P. Lilly, T. M. Lu, and D. R. Luhman, “Effective out-of-plane g-factor in strain-Ge/SiGe quantum dots,” Physical Review B, vol. 106, no. 12, p. L121402, Sep. 2022. DOI.

Wei-Chih Hou, Nai-Wen Hsu, Yen-Yang Chen, Tz-Ming Wang, Chia-You Liu, Hsiang-Shun Kao, Miin-Jang Chen, and Jiun-Yun Li, “Cryogenic Si/SiGe heterostructure flash memory devices,” ACS Applied Electronic Materials, vol. 4, no. 6, pp. 2879 – 2884, June 2022. DOI

Yao-Chun Chang, I. Huang, C. Y. Chen, Min-Jui Lin, S. Y. Chen, and Jiun-Yun Li, “Electron-spin-resonance meanderlines for effective spin control in silicon quantum dots for large-scale qubit applications,” Applied Physics Letters, vol. 119, no. 24, p. 243503, Dec. 2021. DOI

Wei-Chih Hou, Pao-Chuan Shih, H. H. Lin, B. Wu, and Jiun-Yun Li, “High band-to-band tunneling current in InAs/GaSb heterojunction Esaki diodes by the enhancement of electric fields close to the mesa sidewalls,” IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 3748 – 3754, Aug. 2021.  DOI

Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li, “Strain effects on Rashba spin-orbit coupling of two-dimensional hole gases in GeSn/Ge heterostructures,” Advanced Materials, vol. 33, no. 26, p. 2007862, July 2021. DOI

Yen Chuang, Chia-You Liu, Hsiang-Shun Kao, Kai-Ying Tien, G. L. Luo, and Jiun-Yun Li, “Schottky barrier height modulation of metal/n-GeSn contacts featuring low contact resistivity by in-situ chemical vapor deposition doping and NiGeSn alloy formation,” ACS Applied Electronic Materials, vol. 3, no. 3, pp. 1334 – 1340, Mar. 2021. DOI

Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “Electron mobility enhancement in GeSn n-channel MOSFETs by tensile strain,” IEEE Electron Device Letters, vol. 42, no. 1, pp. 10 – 13, Jan. 2021. DOI

C. W. Tung, T. R. Kuo, C. S. Hsu, Yen Chuang, H. C. Chen, C. K. Chang, C. Y. Chien, Y. J. Lu, T. S. Chan, J. F. Lee, Jiun-Yun Li, and H. M. Chen, “Light-induced activation of adaptive junction for efficient solar-driven oxygen evolution: in-situ unraveling the interfacial metal-silicon junction,” Advanced Energy Materials, vol. 9, no. 31, p.1901308, July, 2019. (Cover) DOI

Yi-Hsin Su, Kuan-Yu Chou, Yen Chuang, T. M. Lu, and Jiun-Yun Li, “Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening,” Journal of Applied Physics, vol. 125, no. 23, p. 235705, June, 2019. (Editor’s pick) DOI

W. Hardy, C. Harris, Yi-Hsin Su, Yen Chuang, J. Moussa, L. Maurer, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Single and double hole quantum dots in strained Ge/SiGe quantum wells,” Nanotechnology, vol. 30, no. 21, p. 215202, Mar. 2019. DOI

Chung-Tao Chou, N. T. Jacobson, J. E. Moussa, A. D. Baczewski, Yen Chuang, Chia-You Liu, Jiun-Yun Li, and T. M. Lu, “Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime,” Nanoscale, vol. 10, no. 44, pp. 20559 –20564, Nov. 2018. (Inside front cover) DOI

Tzu-Hung Liu, Yen Chuang, Po-Yuan Chiu, Chia-You Liu, C. H. Shen, G. L. Lou, and Jiun-Yun Li, “High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing,” IEEE Electron Device Letters, vol. 39, no. 4, pp. 468 – 471, April 2018. DOI

Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure,” Applied Physics Letters, vol. 112, no. 8, p. 083502, Feb. 2018. DOI

Pao-Chuan Shih, Wei-Chih Hou, and Jiun-Yun Li, “A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current,” IEEE Electron Device Letters, vol. 38, no. 12, pp. 1751 – 1754, Dec. 2017. DOI

Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” Physical Review Materials, vol. 1, no. 4, p. 044601, Sep. 2017. DOI

T. M. Lu, C. T. Harris, S. H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Applied Physics Letters, vol. 111, no. 10, p. 102108, Sep. 2017. DOI

Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely high electron mobility in isotopically enriched 28Si quantum wells grown by chemical vapor deposition,” Applied Physics Letters, vol. 103, no. 16, p. 162105, Oct. 2013. DOI