J. Y. Wu, Y. F. Wang, Chia-You Liu, S. C. Kuo, T. H. Chen, Jiun-Yun Li, C. Y. Huang, C. H. Liu, J. Y. Yang, C. C. Chang, and T. H. Chang, “High-quality GeSn thin-film resonant cavities for short-wave infrared applications,” Journal of Vacuum Science Technology B, vol. 41, no. 4, p. 042202, June 2023. DOI

T. C. Hong, W. H. Lu, Y. H. Wang, Jiun-Yun Li, Y. J. Lee, T. S. Chao, “Fabrication of GeSn nanowire MOSFETs by utilizing highly selective etching techniques,” IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2028 – 2033, April 2023. DOI

X. Wang, et al., “Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure,” APL Materials, vol. 10, no. 11, p. 111108, Nov. 2022.  DOI

Chia-You Liu, Kai-Ying Tian, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li, "Room-temperature negative differential resistance and high tunneling current density in GeSn Esaki diodes," Advanced Materials, vol. 34, no. 41, p. 2203888, Oct. 2022. DOI

A. J. Miller, M. Brickson, W. J. Hardy, Chia-You Liu, Jiun-Yun Li, A. Baczewski, M. P. Lilly, T. M. Lu, and D. R. Luhman, “Effective out-of-plane g-factor in strain-Ge/SiGe quantum dots,” Physical Review B, vol. 106, no. 12, p. L121402, Sep. 2022. DOI

Wei-Chih Hou, Nai-Wen Hsu, Tz-Ming Wang, Chia-You Liu, Hsiang-Shun Kao, Miin-Jang Chen, and Jiun-Yun Li, “Cryogenic Si/SiGe heterostructure flash memory devices,” ACS Applied Electronic Materials, vol. 4, no. 6, pp. 2879 – 2884, June 2022. DOI

S. W. Chang, et al., “First demonstration of heterogeneous IGZO/Si CFET monolithic 3D integration with dual workfunction gate for ultra low-power SRAM and RF applications,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 2101 – 2107, April 2022. DOI

Nai-Wen Hsu, Wei-Chih Hou, Yen-Yang Chen, Yu-Jui Wu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Temperature dependence of charge distributions and carrier mobility in an undoped Si/SiGe heterostructure,” IEEE Transactions on Electron Devices, vol. 69, no. 2, pp. 482 – 486, Feb. 2022. DOI

Yao-Chun Chang, I. Huang, C. Y. Chen, Min-Jui Lin, S. Y. Chen, and Jiun-Yun Li, “Electron-spin-resonance meanderlines for effective spin control in silicon quantum dots for large-scale qubit applications,” Applied Physics Letters, vol. 119, no. 24, p. 243503, Dec. 2021. DOI

D. Chen, S. Cai, Nai-Wen Hsu, S. H. Huang, Yen Chuang, E. Nielsen, Jiun-Yun Li, C. W. Liu, T. M. Lu, and D. Laroche, “Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, vol. 119, no. 22, p. 223103, Nov. 2021. DOI

Wei-Chih Hou, Pao-Chuan Shih, H. H. Lin, B. Wu, and Jiun-Yun Li, “High band-to-band tunneling current in InAs/GaSb heterojunction Esaki diodes by the enhancement of electric fields close to the mesa sidewalls,” IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 3748 – 3754, Aug. 2021. DOI

Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li, “Strain effects on Rashba spin-orbit coupling of two-dimensional hole gases in GeSn/Ge heterostructures,” Advanced Materials, vol. 33, no. 26, p. 2007862, July 2021. DOI

Yen Chuang, Chia-You Liu, Hsiang-Shun Kao, Kai-Ying Tien, G. L. Luo, and Jiun-Yun Li, “Schottky barrier height modulation of metal/n-GeSn contacts featuring low contact resistivity by in-situ chemical vapor deposition doping and NiGeSn alloy formation,” ACS Applied Electronic Materials, vol. 3, no. 3, pp. 1334 – 1340, Mar. 2021. DOI

Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “Electron mobility enhancement in GeSn n-channel MOSFETs by tensile strain,” IEEE Electron Device Letters, vol. 42, no. 1, pp. 10 – 13, Jan. 2021. DOI

Po-Yuan Chiu, D. Lidsky, Yen Chuang, Yi-Hsin Su, Jiun-Yun Li, C. T. Harris, and T. M. Lu, “Post-growth modulation doping by ion implantation,” Applied Physics Letters, vol. 117, no. 26, p. 263502, Dec. 2020. DOI

X. Liu, T. M. Lu, C. T. Harris, F. L. Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu, and R. R. Du, “Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge-SiGe heterostructure,” Physical Review B, vol. 101, no. 7, p. 075304, Feb. 2020. DOI

C. W. Tung, T. R. Kuo, C. S. Hsu, Yen Chuang, H. C. Chen, C. K. Chang, C. Y. Chien, Y. J. Lu, T. S. Chan, J. F. Lee, Jiun-Yun Li, and H. M. Chen, “Light-induced activation of adaptive junction for efficient solar-driven oxygen evolution: in-situ unraveling the interfacial metal-silicon junction,” Advanced Energy Materials, vol. 9, no. 31, p.1901308, July, 2019. (Cover) DOI

Yi-Hsin Su, Kuan-Yu Chou, Yen Chuang, T. M. Lu, and Jiun-Yun Li, “Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening,” Journal of Applied Physics, vol. 125, no. 23, p. 235705, June, 2019. (Editor’s pick) DOI

W. Hardy, C. Harris, Yi-Hsin Su, Yen Chuang, J. Moussa, L. Maurer, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Single and double hole quantum dots in strained Ge/SiGe quantum wells,” Nanotechnology, vol. 30, no. 21, p. 215202, Mar. 2019. DOI

Chung-Tao Chou, N. T. Jacobson, J. E. Moussa, A. D. Baczewski, Yen Chuang, Chia-You Liu, Jiun-Yun Li, and T. M. Lu, “Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime,” Nanoscale, vol. 10, no. 44, pp. 20559 –20564, Nov. 2018. (Inside front cover) DOI

E. Bussmann, J. K. Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, Jiun-Yun Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T. M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials, vol. 1, no. 6, p. 066004, June 2018. DOI

Tzu-Hung Liu, Yen Chuang, Po-Yuan Chiu, Chia-You Liu, C. H. Shen, G. L. Lou, and Jiun-Yun Li, “High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing,” IEEE Electron Device Letters, vol. 39, no. 4, pp. 468 – 471, April 2018. DOI

Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure,” Applied Physics Letters, vol. 112, no. 8, p. 083502, Feb. 2018. DOI

C. W. Tung, Yen Chuang, H. C. Chen, T. S. Chan, Jiun-Yun Li, and H. M. Chen, “Tunable electrodeposition of Ni electrocatalysts onto Si microwires array for photoelectrochemical water oxidation,” Particle and Particle Systems Characterization, vol. 35, no. 1, p.1700321, Jan. 2018. DOI

Pao-Chuan Shih, Wei-Chih Hou, and Jiun-Yun Li, “A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current,” IEEE Electron Device Letters, vol. 38, no. 12, pp. 1751 – 1754, Dec. 2017. DOI

Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” Physical Review Materials, vol. 1, no. 4, p. 044601, Sep. 2017. DOI

T. M. Lu, C. T. Harris, S. H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Applied Physics Letters, vol. 111, no. 10, p. 102108, Sep. 2017. DOI

T. M. Lu, L. A. Tracy, D. Laroche, S. H. Huang, Yen. Chuang, Yi-Hsin Su, Jiun-Yun Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports, vol. 7, no. 2468, May 2017. DOI

D. Laroche, S. H. Huang, Yen Chuang, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Applied Physics Letters, vol. 108, no. 23, p. 233504, June 2016. DOI

D. Guo, Jiun-Yun Li, L. Cheng, X. Chen, T. Worchesky, and F. S. Choa, “Widely tunable integrated mid-infrared quantum cascade lasers using super-structure grating reflectors,” Photonics, vol. 3, no. 2, p. 25, May 2016. DOI

T. M. Lu, D. Laroche, S. H. Huang, Yen Chuang, Jiun-Yun Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports, vol. 6, no. 20967, Feb. 2016. DOI

D. Laroche, S. H. Huang, E. Nielsen, Yen Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” AIP Advances, vol. 5, no. 10, p. 107106, Oct. 2015. DOI

D. Laroche, S. H. Huang, E. Nielsen, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, vol. 106, no. 14, p. 143503, April 2015. DOI

C. T. Huang, Jiun-Yun Li, K. S. Chou, and J. C. Sturm, “Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer,” Applied Physics Letters, vol. 104, no. 24, p. 243510, June 2014. DOI

Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely high electron mobility in isotopically enriched 28Si quantum wells grown by chemical vapor deposition,” Applied Physics Letters, vol. 103, no. 16, p. 162105, Oct. 2013. DOI

Jiun-Yun Li and J. C. Sturm, “The effects of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases,” IEEE Transactions on Electron Devices, vol. 60, no.8, pp. 2479 – 2484, Aug. 2013. DOI

C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Implant isolation of silicon two-dimensional electron gases at 4.2 K,” IEEE Electron Device Letters, vol. 34, pp. 21 – 23, Jan. 2013. DOI

Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “The effect of hydrogen on the surface segregation of phosphorus in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD,” Applied Physics Letters, vol. 101, no. 14, p. 142112, Oct. 2012. DOI