Li Research Group at NTUEE

Ｑuantum Electronics Laboratory for Future Computing

2025

Yen-Yang Chen, Kai-Ying Tien, Wei-Hsiang Kao, Chia-You Liu, Yi-Pei Lin, Muskan Sangal, and Jiun-Yun Li “Capacitance Modeling of Off-State Leakage Effects in Ge(Sn) n-MOSFETs,” 2025 International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI-ISTDM2025), Institute of Science Tokyo, Suzukake Campus, Kanagawa, Japan, November 10 ~ 13, 2025. (oral)
Min-Jui Lin, Shih-Yun CHen, Ian Huang, Shih-Yuan Chen, and Jiun-Yun Li, "Microwave characteristics of superconducting tantalum/tungsten resonators on silicon substrates," The 17th European Conference on Applied Superconductivity, Porto, Portugal, September 21 – 25, 2025. (oral).
Min-Jui Lin, Wei-Hsiang Kao, Yi-Pei Lin, Yi-An Yu, and Jiun-Yun Li, "Effects of buffer layers on superconductivity of tantallum thin films sputtered on silicon substrate," The 30th International Conference on Low Temperature Physics, Bilbao, Spain, August 7 – 13, 2025. (poster).
Jiun-Yun Li, "Group-IV heterostructures for quantum technologies," The 5th Symposium on Nano-Device Circuits and Technologies (SNDCT) 2025, Hsin-Chu, Taiwan, May 27 – 28, 2025. (invited oral)
Yu-Jui Wu, Muskan Sangal, Hsiang-Shun Kao, Wei-Hsiang Kao, Yi-Pei Lin, and Jiun-Yun Li, “Effects of chemical mechanical polishing on carrier transport in undoped Si/SiGe heterostructures,” The 247th ECS Meeting, Montreal, Canada, May 18 – 22, 2025. (oral)
Yi-Tzu Wang, Hsiang-Shun Kao, and Jiun-Yun Li, “Cryogenic characteristics of ferroelectric capacitors and ferroelectric field-effect transistors,” The 247th ECS Meeting, Montreal, Canada, May 18 – 22, 2025. (oral)

2024

S. Y. Chen, I. Huang, Min-Jui Lin, Jiun-Yun Li, Shih-Yuan Chen, “A DC to 67-GHz 40-nm CMOS SP4T Switch for Cryogenic S-Parameter Measurement and Calibration,” 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, Sep. 23 – 24, 2024.
Yen-Yang Chen, Kai-Ying Tien, Chia-You Liu, Wei-Hsiang Kao, and Jiun-Yun Li, “Electron transport in Ge(Sn) n-type metal-oxide-semiconductor field-effect transistors at cryogenic temperatures,” 2024 International Conference on Solid State Devices and Materials, Acrea HIMEJI Hyogo, Japan, Sep. 1 – 4, 2024. (oral)
Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Chen-Yao Liao, and Jiun-Yun Li, “Simulation of quantum transport in a Si/SiGe quantum dot,” The 16th IEEE Workshop on Low-Temperature Electronics (WOLTE), Cagliari, Sardinia, Italy, June 3 – 6, 2024. (poster)
Wei-Che Hsu, Min-Jui Lin, Yao Su, and Jiun-Yun Li, “Superconducting tunneling in a Ta/MgO/Ta Heterostructure,” The 16th IEEE Workshop on Low-Temperature Electronics (WOLTE), Cagliari, Sardinia, Italy, June 3 – 6, 2024. (oral)
Yi-Tzu Wang, Hsiang-Shun Kao, and Jiun-Yun Li, “Cryogenic characteristics of HZO-based FeRAM and FeFETs,” The 16th IEEE Workshop on Low-Temperature Electronics (WOLTE), Cagliari, Sardinia, Italy, June 3 – 6, 2024. (poster).
Ze-Wei Chen, Chou-Wei Kiang, Chia-Tse Tai, Hao-Chien Wang, Min-Jui Lin, Yen Chuang, and Jiun-Yun Li, “Weak antilocalization of two-dimensional hole gases in a modulated-doped GeSn/Ge heterostructure,” 2024 APS March Meeting Session B13, Minneapolis, MN, USA, Mar. 3 – 8, 2024.
Yu-Jui Wu, Chou-Wei Kiang, Tsung-Ying Li, Ze-Wei Chen, Min-Jui Lin, Wei-Hsiang Kao, and Jiun-Yun Li, “Conductance anomalies in nanoscale quantum point contact devices on an undoped GeSn/Ge heterostructure,” 2024 APS March Meeting Session B13, Minneapolis, MN, USA, Mar. 3 – 8, 2024.
D. Chen, N. R. Kapsos, Nai-Wen Hsu, S. H. Huang, Yen Chuang, Jiun-Yun Li, C. W. Liu, E. Nielsen, T. M. Lu, and D. Laroche, “Exploring an independent contact scheme in Si/SiGe bilayers for studies of spontaneous interlayer coherence,” 2024 APS March Meeting Session M17, Minneapolis, MN, USA, Mar. 3 – 8, 2024.
A. Bradicich, P. Petluru, H. Chao, Y. Zeng, T. M. Lu, M. P. Lilly, Chia-You Liu, and Jiun-Yun Li, “Quantifying the weak antilocalization effect in GeSn alloys,” 2024 APS March Meeting Session N12, Minneapolis, MN, USA, Mar. 3 – 8, 2024.

2021 ~ 2023

2023

Y. T. Chen, I. Huang, Min-Jui Lin, S. Y. Chuang, H. L. Ho, K. S. Hsu, P. U. Lin, S. Y. Chen, L. H. Lu, Jiun-Yun Li, and J. C. Chien, “A Thru-Reflect-Series-Resistance (TRS) Calibration for Cryogenic Device Characterization in 40-nm CMOS Technology,” 2023 IEEE/MTT-S International Microwave Symposium (IMS), San Diego, USA, June 11 – 16, 2023.
Jiun-Yun Li, "Module development of Si quantum technology for a practical quantum computer,” 2023 APS March Meeting Session F52, Las Vegas, NV, USA, Mar. 6 – 10, 2023. (invited talk)
Tsung-Ying Li, Yu-Jui Wu, Hung-Yu Tsao, Min-Jui Lin, Chia-You Liu, Chia-Tse, Tai, and Jiun-Yun Li, “Quantum point contacts on a GeSn/Ge heterostructure,” 2023 APS March Meeting Session F52, Las Vegas, NV, USA, Mar. 6 – 10, 2023. (oral)
Wei-Che Hsu, Yao Su, Hung-Yu Tsao, Yu-Jui Wu, Min-Jui Lin, Kai-Syang Hsu, and Jiun-Yun Li, “Ta/MgO/Ta tunneling junctions for circuit quantum electrodynamics applications,” 2023 APS March Meeting Session M27, Las Vegas, NV, USA, Mar. 6 – 10, 2023. (oral)

2022

Jiun-Yun Li, “Si-based qubits and cryo-CMOS control circuits,” Invited tutorial talk in 2022 Asian Test Symposium, Taichung, Taiwan, Nov. 21 – 23, 2022.
Rui-Jun Wu, Shih-Chieh Su, Hsiang-Shun Kao, and Jiun-Yun Li, “A record high mobility of ~ 22 cm2/V-s in a bottom-gate SnS2 field-effect transistor by a pre-pattern process,” 2022 International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 27 – 28, 2022. (oral)
Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Min-Jui Lin, Hung-Yu Tsao, Chen-Yao Liao, and Jiun-Yun Li, “Simulation of quantum transport in a silicon metal-oxide semiconductor quantum dot,” 2022 International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 27 – 28, 2022. (poster)
Yao-Chun Chang, Chia-Tse, Chia-You Liu, Cheng-Kai Hsiung, Ian Huang, Min-Jui Lin, Yu-Jui Wu, Hung-Yu Tsao, Shih-Yuan Chen, and Jiun-Yun Li, "Spin control in semiconductor heterostructures," The 15th Asia Pacific Physics Conference (APPC15), August 21 – 26, 2022 (invited talk).
Yu-Jui Wu, Chih-Ying Chiang, Hung-Yu Tsao, Tsung-Ying Li, Tz-Ming Wang, Min-Jui Lin, ChiaYou Liu, Ching-Chen Yeh, Cheng-Hsueh Yang, Chi-Te Liang, and Jiun-Yun Li, “Si metal-oxide-semiconductor and Si/SiGe heterostructure quantum dots,” 2022 International Symposium on VLSI-TSA T10, Hsin-Chi, Taiwan, April 18 – 21, 2022. (oral)

2021

Kai-Ying Tien, Chia-You Liu, Po-Yuan, Chiu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li, “Electron mobility enhancement in n-GeSn epitaxial layers by tensile strain,” 2021 International Conference on Solid State Devices and Materials (SSDM), Virtual, Japan, Sep. 6 – 9, 2021. (oral)
Chia-You Liu, Yen Chuang, Chia-Tse Tai, Hsiang-Shun Kao, Kai-Ying Tien, and Jiun-Yun Li, “High-performance GeSn n-MOSFETs and Esaki diodes and spin-orbit coupling in GeSn/Ge heterostructures” 2021 IEEE Summer Topicals Meeting Series, Virtual, July 19 – 21, 2021. (invited talk)
Wei-Chih Hou, Nai-Wen Hsu, Hsiang-Shun Kao, and Jiun-Yun Li, “Multi-bit cryogenic flash memory on Si/SiGe and Ge/GeSi heterostructures,” 2021 International Symposium on VLSI-TSA T4-4, Hsin-Chi, Taiwan, April 19 – 22, 2021. (oral)
Yu-Jui Wu, Chih-Ying Chiang, Hung-Yu Tsao, Min-Jui Lin, Pu-Jia Hsieh, C. C. Yeh, W. R. Syong, K. S. Hsu, C. T. Liang, J. C. Chen, and Jiun-Yun Li, “Si Cryo-CMOS and quantum dots for quantum computing applications,” 2021 International Symposium on VLSI-TSA T1-5, Hsin-Chi, Taiwan, April 19 – 22, 2021. (oral)
A. J. Miller, M. Brickson, W. J. Hardy, Chia-You Liu, Jiun-Yun Li, A. D. Baczewski, M. P. Lilly, T. M. Lu, and D. R. Luhman, “Measurement of the out-of-plane g-factor in strained Ge/SiGe using single-hole quantum dots,” 2021 APS March Meeting Session J29, Virtual, Mar. 15 – 19, 2021. (oral)
D. Chen, S. Cai, Nai-Wen-Hsu, S. H. Huang, Yen Chuang, Jiun-Yun Li, C. W. Liu, T. M. Lu, and D. Laroche, “Density dependence of the excitation gap in Si/SiGe bilayers,” 2021 APS March Meeting Session F46, Virtual, Mar. 15 – 19, 2021. (oral)

2016 ~ 2020

2020

C. H. Wu, C. Y. Hsieh, Jiun-Yun Li, and J. C. M. Li, “qATG: Automatic test generation for quantum circuits,” 2020 IEEE International Test Conference (ITC), Washington DC, U.S.A., Nov. 1 – 6, 2020. (oral)
Chia-Tse Tai, Po-Yuan Chiu, Yen Chuang, Chia-You Liu, Tz-Ming Wang, Cheng-Yu Lin, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Weak anti-localization in undoped Ge/GeSn heterostructures,” 2020 APS March Meeting Session L42, Denver, CO, U.S.A., Mar. 2 – 6, 2020. (oral)
Chia-Tse Tai, Po-Yuan Chiu, Yen Chuang, Chia-You Liu, Tz-Ming Wang, Cheng-Yu Lin, C. Thomas Harris, T. M. Lu, and Jiun-Yun Li, “Demonstration of two-dimensional hole gases (2DHG) in strained GeSn quantum wells,” 2020 APS March Meeting Session D27, Denver, CO, U.S.A., Mar. 2 – 6, 2020. (oral)
Chia-Tse Tai, Po-Yuan Chiu, Yen Chuang, Chia-You Liu, Tz-Ming Wang, Cheng-Yu Lin, C. Thomas Harris, T. M. Lu, and Jiun-Yun Li, “Magneto-transport and effective mass of two-dimensional hole gases in modulation-doped and undoped GeSn/Ge heterostructures,” 2020 Annual Meeting of the Physical Society of Taiwan, Ping-Tung, Taiwan, Feb. 5 – 7, 2020. (oral)

2019

Cheng-Yu Lin, Kai-Ying Tien, Chia-You Liu, Yen Chuang, Chung-Tao Chu, Po-Yuan Chiu, Jiun-Yun Li, “Weak antilocalization (WAL) effects in p-GeSn epilayers,” 2019 International Electron Devices and Materials Symposium (IEDMS), New Taipei, Taiwan, Oct. 24 – 25, 2019.
Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Short-range scattering source of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” 236th Meeting of the Electrochemical Society, Atlanta, GA, U.S.A., Oct. 13 – 17, 2019. (poster)
Yen Chuang, Po-Yuan Chiu, Ching-Tsung Huang, Pao-Chuang Shih, Chia-You Liu, Guang-Li Luo, and Jiun-Yun Li, “Germanium-tin junctionless p-FinFETs: Effects of channel doping concentration and fin width,” 236th Meeting of the Electrochemical Society, Atlanta, GA, U.S.A., Oct. 13 – 17, 2019. (oral)
W. J. Hardy, Yi-Hsin Su, Yen Chuang, L. N. Maurer, M. Brickson, A. Baczewski, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits,” 236th Meeting of the Electrochemical Society, Atlanta, GA, U.S.A., Oct. 13 – 17, 2019. (oral)
Chia-You Liu, Po-Yuan, Chiu, Yen Chuang, and Jiun-Yun Li, “Indirect-to-direct bandgap transition of GeSn by phonon-assisted tunneling spectra in Esaki diodes,” 2019 International Conference on Solid State Devices and Materials (SSDM), Nagoya University, Aichi, Japan, Sep. 2 – 5, 2019. (poster)
Chia-You Liu, Yen Chuang, G. L. Luo, and Jiun-Yun Li, “Strained GeSn films with a high Sn fraction of ~ 22% by reduced pressure chemical vapor deposition,” 2019 2nd joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, WI, U.S.A., June 2 – 6, 2019. (oral)
Nai-Wen Hsu, Tz-Ming Wang, Chia-Tse Tai, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Modulation of turn-on voltage in undoped Si/SiGe heterostructure insulated-gate field-effect transistors (IGFETs) for cryogenic memory applications,” 2019 2nd joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, WI, U.S.A., June 2 – 6, 2019. (oral)
Nai-Wen Hsu, Tz-Ming Wang, Chia-Tse Tai, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “C-V characteristics of undoped Si/SiGe heterostructure insulated-gate field-effect transistors,” 2019 2nd joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, WI, U.S.A., June 2 – 6, 2019. (poster)
T. M. Lu, Jiun-Yun Li, D. R. Luhman, W. J. Hardy, L. A. Tracy, C. T. Harris, N. T. Jacobson, A. D. Baczewski, J. E. Moussa, L. N. Maurer, M. Brickson, Yi-Hsin Su, Chung-Tao Chou, Yen Chuang, and Chia-You Liu, “Holes in germanium quantum wells and their potential applications in quantum computing,” 2019 MRS Spring Meeting QN 06, Pheonix, AZ, U.S.A., April 22 – 29, 2019. (oral)
Jia-You Liu, Po-Yuan Chiu, Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “High dopant activation of phosphorus in strained and relaxed GeSn by rapid thermal annealing and microwave annealing,” 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019, Singapore, Mar. 13 – 15, 2019. (oral)
Jia-You Liu, Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “A high ION/IOFF ratio of 6 x 105 in germanium-tin n+/p junctions by phosphorus ion implantation,” 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019, Singapore, Mar. 13 – 15, 2019. (oral)
W. Hardy, Yi-Hsin Su, Yen Chuang, L. Maurer, M. Brickson, A. Baczewski, Jiun-Yun Li, Lu, and D. Luhman, “Improved control of quantum dots in Ge/GeSi quantum wells for spin qubit applications,” 2019 APS March Meeting Session L11, Boston, MA, U.S.A., Mar. 4 – 8, 2019. (oral)
Chung-Tao Chou, Yen Chuang, Chia-You Liu, and Jiun-Yun Li, “Gate-tunable spin-orbit coupling effects in an undoped Ge/GeSi heterostructure,” 2019 Annual Meeting of the Physical Society of Taiwan, Hsin-Chu, Taiwan, Jan. 23 – 25, 2019. (oral)

2018

P.-J. Sung, C.-Y. Chang, L.-Y. Chen, K.-H. Kao, C.-J. Su, T.-H. Liao, C.-C. Fang, C.-J. Wang, T.-C. Hong, C.-Y. Jao, H.-S. Hsu, S.-X. Luo, Y.-S. Wang, H.-F. Huang, J.-H. Li, Y.-C. Huang, F.-K. Hsueh, C.-T. Wu, Y.-M. Huang, F.-J. Hou, G.-L. Luo, Y.-C. Huang, Y.-L. Shen, W. C.-Y. Ma, K.-P. Huang, K.-L. Lin, S. Samukawa, Y. Li, G.-W Huang, Y.-J. Lee, J. -Y. Li, W.-F. Wu, J.-M. Shieh, T.- S. Chao, W. -K. Yeh, and Y.-H. Wang, “Voltage transfer characteristic matching by different nanosheet layer numbers of vertically stacked junctionless CMOS inverter for SoP/3D-ICs applications,” 2018 IEEE IEDM Tech. Dig., San Francisco, U.S.A., Dec. 1 – 5, 2018. (oral)
Ching-Tsung Huang, Yen Chuang, Chia-You Liu, and Jiun-Yun Li, “Ferroelectric-based resistive RAM with an extremely high On/Off ratio of 108,” 2018 eMRS Spring Meeting, Symposium R, Strasbourg, France, June 18 – 22, 2018. (oral)
Ching-Tsung Huang, Yen Chuang, Chia-You Liu, and Jiun-Yun Li, “Direct-bandgap photoluminescence in strained and relaxed GeSn thin films and Ge/GeSn/Ge quantum well structures,” 2018 eMRS Spring Meeting, Symposium G, Strasbourg, France, June 18 – 22, 2018. (oral)
Nai-Wen Hsu, Po-Yuan Chiu, Chung-Tao Chou, Yen Chuang, Chia-You Liu, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “First experimental demonstration of a two-dimensional electron gas (2DEG) in a strained Ge quantum well,” 2018 eMRS Spring Meeting, Symposium G, Strasbourg, France, June 18 – 22, 2018. (oral)
Po-Yuan Chiu, Chia-You Liu, Yen Chuang, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Effective mass of a high-mobility two-dimensional hole gas (2DHG) in a strained GeSn quantum well,” 2018 eMRS Spring Meeting, Symposium G, Strasbourg, France, June 18 – 22, 2018. (oral)
Po-Yuan Chiu, Chia-You Liu, Yen Chuang, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Modulation of two-dimensional hole gas density in an undoped Ge/GeSi heterostructure by ion implantation,” 2018 eMRS Spring Meeting, Symposium G, Strasbourg, France, June 18 – 22, 2018. (oral)
Chia-You Liu, Po-Yuan Chiu, Yen Chuang, Ching-Tsung Huang, and Jiun-Yun Li, “High peak-to-valley current ratio of 15 in a relaxed GeSn Esaki diode,” 2018 1st joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Potsdam, Germany, May 27 – 31, 2018. (oral)
Yen Chuang, Ching-Tsung Huang, Chia-You Liu, and Jiun-Yun Li, “Extremely low threading dislocation density (< 105 cm-2) in relaxed GeSn on a superlattice buffer layer by reduced-pressure chemical vapor deposition,” 2018 1st joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Potsdam, Germany, May 27 – 31, 2018. (oral)
Yen Chuang and Jiun-Yun Li, “Surface segregation of phosphorus in epitaxially grown SiGe, Ge, GeSn films by reduced pressure chemical vapor deposition,” 2018 1st joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Potsdam, Germany, May 27 – 31, 2018. (poster)
D. Luhman, J. Moussa, L. Maurer, Y. Chuang, Jiun-Yun Li, and Lu, “Demonstration of a hole quantum dot in Ge/SiGe,” 2018 APS March Meeting Session F28, Los Angeles, CA, U.S.A., Mar. 5 – 9, 2018. (oral)
M. Freeman, T. M. Lu, Y. Chuang, Jiun-Yun Li, C. W. Liu, J. Curtis, and L. Engel, “Microwave spectroscopy of resistive film gated HIGFETs and MOSFETs,” 2018 APS March Meeting Session R40, Los Angeles, CA, U.S.A., Mar. 5 – 9, 2018. (oral)
Yi-Hsin Su, Chung-Tao Chou, Nai-Wen Hsu, Yen Chuang, Chia-You Liu, and Jiun-Yun Li, “Scattering mechanisms of two-dimensional hole gases in undoped Ge/GeSi heterostructures,” 2018 Annual Meeting of the Physical Society of the Republic of China (Taiwan), Taipei, Taiwan, Jan. 24 – 26, 2018. (poster)
Yi-Hsin Su, Kuan-Yu Chou, Nai-Wen Hsu, Chung-Tao Chou, Yen Chuang, and Jiun-Yun Li, “Effects of surface tunneling in undoped Si/SiGe heterostructures,” 2018 Annual Meeting of the Physical Society of the Republic of China (Taiwan), Taipei, Taiwan, Jan. 24 – 26, 2018. (poster)
Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Negative differential resistance in DC transfer characteristics of a Si two-dimensional electron gas,” 2018 Annual Meeting of the Physical Society of the Republic of China (Taiwan), Taipei, Taiwan, Jan. 24 – 26, 2018. (oral)

2017

Yen Chuang, Hsien-Chih Huang, and Jiun-Yun Li, “GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant,” Silicon Nanoelectronics Workshop 2017, Kyoto, Japan, June 4 – 5, 2017. (poster)
Pao-Chuan Shih, Hsien-Chih Huang, Chien-An Wang, and Jiun-Yun Li, “A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with SSave of 28 mV/dec,” Silicon Nanoelectronics Workshop 2017, Kyoto, Japan, June 4 – 5, 2017. (poster)
Yen Chuang, Po-Yuan Chiu, Ching-Tsung Huang, Chia-You Liu, and Jiun-Yun Li, “Thermal stability of n-type germanium-tin epitaxial films,” 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Warwick, U.K., May 14 –19, 2017. (poster)
Chia-You Liu, Po-Yuan Chiu, Yen Chuang, Pao-Chuan Shih, and Jiun-Yun Li, “Negative differential resistance in GeSn Esaki diodes at room temperature,” 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Warwick, U.K., May 14 –19, 2017. (poster)
Yi-Hsin Su, Yen Chuang, Chia-You Liu, Po-Yuan Chiu, Nai-Wen Hsu, T. M. Lu, and Jiun-Yun Li, “An equilibrium-nonequilibrium crossover in charge distributions and weak antilocalization of Ge and GeSn two-dimensional hole gases,” 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Warwick, U.K., May 14 –19, 2017. (poster)
L. Maurer, J. K. Gamble, J. Moussa, L. Tracy, S. -H. Huang, Yen Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Modeling artificial graphene in Si/SiGe heterostructures,” 2017 APS March Meeting Session Y30, New Orleans, LA, U.S.A., Mar. 13 –17, 2017.
Yi-Hsin Su, Kuan-Yun Chou, Yen Chuang, Po-Yuan Chiu, Nai-Wen Hsu, T. M. Lu, and Jiun-Yun Li, “Mobility enhancement in buried two-dimensional electron and hole gases by remote carrier screening,” 2017 APS March Meeting Session G1, New Orleans, LA, U.S.A., Mar. 13 –17, 2017.
Yi-Hsin Su, Yen Chuang, Po-Yuan Chiu, Nai-Wen Hsu, T. M. Lu, and Jiun-Yun Li, “Cross-over of equilibrium and non-equilibrium carrier density in germanium two-dimensional hole gases,” 2017 APS March Meeting Session X42, New Orleans, LA, U.S.A., Mar. 13 –17, 2017.
Yi-Hsin Su, Yen Chuang, Po-Yuan Chiu, Nai-Wen Hsu, T. M. Lu, and Jiun-Yun Li, “Electrostatics and magneto-transport in two-dimensional hole gases by Ge/GeSi heterostructures,” 2017 Annual Meeting of the Physical Society of the Republic of China (Taiwan), Tamsui, New Taipei City, Taiwan, Jan. 16 – 18, 2017.
Yi-Hsin Su, Kuan-Yu Chou, Yen Chuang, Po-Yuan Chiu, Nai-Wen Hsu, T. M. Lu, and Jiun-Yun Li, “Effects of remote screening in buried two-dimensional electron and hole gases via surface tunneling,” 2017 Annual Meeting of the Physical Society of the Republic of China (Taiwan), Tamsui, New Taipei City, Taiwan, Jan. 16 – 18, 2017.

2016

Y.-J. Lee, T.-C. Hong, F.-K. Hsueh, P.-J. Sung, C.-Y. Chen, S.-S. Chuang, T.-C. Cho, S. Noda, Y.-C. Tsou, K.-H. Kao, C.-T. Wu, T.-Y. Yu, Y.-L. Jian, C.-J. Su, Y.-M. Huang, W.- H. Huang, B.-Y. Chen, M.-C. Chen, K.-P. Huang, J.-Y. Li, M.-J. Chen, Y. Li, S. Samukawa, W.-F. Wu, G.-W. Huang, J.-M. Shieh, T.-Y. Tseng, T.-S. Chao, Y.-H. Wang and W.-K. Yeh and Wen-Kuan Yeh, “High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications,” 2016 IEEE IEDM Tech. Dig., San Francisco, U.S.A., Dec. 3 – 7, 2016.
Pao-Chuan Shih, Wei-Chih Hou, Cheng-Ying Tsai, Hao-Hsiung Lin, and Jiun-Yun Li, “Record high tunneling current density of 32 MA/cm2 in InAs/GaSb heterostructures grown by molecular beam epitaxy,” 2016 International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, Nov. 24 – 25, 2016.
Wei-Chih Hou, Bo-Ting Lin, Miin-Jang Chen, and Jiun-Yun Li, “A record high On/Off ration of 108 in a ferroelectric Hf0.5Zr0.5O2memristor,” 2016 International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, Nov. 24 – 25, 2016.
Yi-Hsin Su, Jiun-Yun Li, L. Rokhinson, and J. C. Sturm, “Intersubband scattering in modulation-doped Si two-dimensional electron gases,” 2016 APS March Meeting Session V7, Baltimore, MD, U.S.A., Mar. 14 – Mar. 18, 2016.
T. M. Lu, D. Laroche, S. H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Electron bilayers in an undoped Si/SiGe double-quantum-well heterostructure,” 2016 APS March Meeting Session C54, Baltimore, MD, U.S.A., Mar. 14 – Mar. 18, 2016.
D. Laroche, S. H. Huang, E. Nielsen, Y. Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” 2016 APS March Meeting Session Y16, Baltimore, MD, U.S.A., Mar. 14 – Mar. 18, 2016.
Yi-Hsin Su, L. Rokhinson, J. C. Sturm, and Jiun-Yun Li, “Scattering in inverted modulation-doped Si two-dimensional electron gases,” 2016 Annual Meeting of the Physical Society of the Republic of China (Taiwan), Kao-Hsiung, Taiwan, Jan. 25 – 27, 2016.

Before 2016

Yao-Jen Lee, Fu-Ju Hou, Shang-Shiun Chuang, Fu-Kuo Hsueh, Kuo-Hsing Kao, Po-Jung Sung, Wei-You Yuan, Jay-Yi Yao, Yu-Chi Lu, Kun-Lin Lin, Chien-Ting Wu, Hsiu-Chih Chen, Bo-Yuan Chen, Guo-Wei Huang, Henry J. H. Chen, Jiun-Yun Li, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Tseung-Yuen Tseng, Wen-Fa Wu, Tuo-Hung Hou, and Wen-Kuan Yeh, “Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology,” 2015 IEEE IEDM Tech. Dig., Washington D.C., U.S.A., Dec. 7 – 9, 2015.
T. M. Lu, Xiaoyan Shi, Wei Pan, Shi-Hsien Huang, CheeWee Liu, and Jiun-Yun Li, “Enhancement of spin susceptibility of low-density two-dimensional electrons in a high quality Si/SiGe quantum well,” 2015 APS March Meeting Session G5, San Antonio, TX, U.S.A., Mar. 2 – Mar. 6, 2015.
D. Guo, X. Chen, Jiun-Yun Li, L. Cheng, T. Worchesky, and F. S. Choa, “Integrated widely tunable quantum cascade lasers with super-structure gratings,” Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XIII, San Francisco, CA, U.S.A., February, 2014.
C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin SiGe cap layers,” 223rd Meeting of the Electrochemical Society, Toronto, ON, Canada, May. 12 – 17, 2013.
X. Chen, L. Cheng, D. Guo, F. S. Choa, Jiun-Yun Li, J. Bruno, J. Bradshaw, K. Lascola, R. Leavitt, J. Pham, and F. Towner, “Surface emitting quantum cascade laser arrays,” Frontiers in Optics (FiO) 2012/Laser Science (LS) XXVII Conference, Rochester, NY, U.S.A., Oct. 14 – 18, 2012.
Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely low electron density in a modulation-doped Si/SiGe 2DEG by effective Schottky gating,” 222nd Meeting of the Electrochemical Society, Honolulu, HI, U.S.A., Oct. 7 – 12, 2012.
X. Chen, L. Cheng, D. Guo, Jiun-Yun Li, and F. S. Choa, “Heat dissipation consideration of high-power mid-infrared quantum cascade laser Arrays,” Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, CA, U.S.A., May 6 – 11, 2012.
Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD,” International SiGe Technology and Device Meeting, Berkeley, CA, U.S.A., June 4 – 6, 2012.
C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “High breakdown voltage Schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation,” International SiGe Technology and Device Meeting, Berkeley, CA, U.S.A., June 4 – 6, 2012.
Jiun-Yun Li, C. T. Huang, L. Rokhinson, J. A. Ohlhausen, M. Malcolm, and J. C. Sturm, “High quality two-dimensional electron gases (2DEGs) in isotopically-enriched strained Si,” 2012 APS March Meeting Session X29, Boston, MA, U.S.A., Feb. 27 – Mar. 2, 2012.
Jiun-Yun Li, K. S. Chou, C. T. Huang, J. C. Sturm, and L. P. Rokhinson, “High quality two-dimensional electron gases (2DEGs) in modulation-doped and enhancement-mode Si/SiGe heterostructures,” 2011 PCCM Symposium: Quantum Control of Solid State Systems, Princeton, NJ, U.S.A., Nov. 3 – 5, 2011.
Jiun-Yun Li, C. T. Huang, J. C. Sturm, and L. P. Rokhinson, “High quality two-dimensional electron system (2DES) in n-type Si/SiGe modulation-doped heterostructures grown by RTCVD,” 2011 International Workshop on Silicon Quantum Electronics,Denver, CO, U.S.A., August 14 – 15, 2011.
K. Chou, Jiun-Yun Li, C. T. Huang, J. C. Sturm, and C. W. Liu, “Stable high quality accumulation-mode Si 2DEG with a shallow top SiGe barrier of ~ 25 nm,” 2011 International Workshop on Silicon Quantum Electronics, Denver, CO, U.S.A., August 14 – 15, 2011.
Jiun-Yun Li, J. C. Sturm, I. Lauer, and S. Koester, “Effect of interface defects and record high peak tunnel current density in Si-based tunnel diodes grown by RTCVD,” 2011 MRS Spring Meeting, Symposium P7.11, San Francisco, CA, U.S.A., April 25 – 29, 2011.
X. Chen, L. Cheng, D. Guo, F. S. Choa, T. Worchesky, and Jiun-Yun Li, “Quasi-continuous-wave operations of quantum cascade lasers,” Photonics North 2010, Proceedings of SPIE, vol. 7750, pp. 775012, Niagra Falls, NY, U.S.A., June 1 – 3, 2010.
X. Chen, L. Cheng, D. Guo, F. S. Choa, T. Worchesky, and Jiun-Yun Li, “Low-threshold current short-cavity quantum cascade lasers,” Photonics North 2010, Proceedings of SPIE, vol. 7750, pp. 775011, Niagra Falls, NY, U.S.A., June 1 – 3, 2010 (invited).
Jiun-Yun Li, J. C. Sturm, A. Majumdar, I. Lauer, and S. Koester, “Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD,” 67th Annual Device Research Conference (DRC 2009) Digest, pp. 99 ~ 100, University Park, PA, U.S.A., June 22 – 24, 2009.
Jiun-Yun Li, F. S. Choa, X. Ji, and L. Cheng, “High growth temperature studies of InGaAs/InAlAs superlattices for high-quality QCL and QWIP applications,” 9th International Conference on Intersubband Transitions in Quantum Wells, Ambleside, Cumbria, U. K., Sep. 9 – 14, 2007.

Page updated

Report abuse