Alumni (Seoul National U.)

PhD

MS

Alumni (Sogang U.)

PhD

Dr. Lee, Jang Woo

2008 ~ 2014         Sogang University (EE), BS 

2014 ~ 2021         Sogang University (EE), PhD

2021 ~ 2022         Sogang University (EE), Post-doctor      

                             (BK21 FOUR program)

2022 ~ 2023         Seoul National U. (EE), Post-doctor

2023 ~                  SKKU, Post-doctor

Tunnel Field-Effect Transistors (TFETs) as Silicon-Based Synaptic Devices for Neuromorphic Computing Systems

Dr. Kwon, Hyug Su

2008 ~ 2014         Sogang University (EE), BS 

2015 ~ 2022         Sogang University (EE), PhD

2022 ~ 2022         Seoul National U. (EE), Post-doctor

2023 ~                  Agency for Defense Development,      

                             Researcher


Monolithic Three-Dimensional CMOS–NEM Reconfigurable Logic Circuits

MS

Lee, Woo Jun

2003 ~ 2009            Sogang University (EE), BS

2009 ~ 2011            Sogang University (EE), MS

2011 ~ 2015            SK Hynix

2015 ~                     KARI

Tunneling Field-Effect Transistors for Low-Power Circuit Applications 

Roh, Seung Hyeun

2003 ~ 2009            Sogang University (EE), BS

2010 ~ 2012            Sogang University (EE), MS

2012 ~                     SK Hynix

Scaling Trend of Nanoelectromechanical (NEM) Nonvolatile Memory Cells Based on Finite Element Analysis (FEA)

Jang, Jung Shik

2006 ~ 2010            Sogang University (EE), BS

2010 ~ 2012            Sogang University (EE), MS

2012 ~                     SK Hynix

Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs) for Low-Power Circuit Applications

Lee, Min Jin

2006 ~ 2010            Sogang University (EE), BS

2010 ~ 2012            Sogang University (EE), MS

2012 ~                     SK Hynix

Analytical Model of Single-Gate Silicon-on-Insulator (SOI) Tunneling Field-Effect Transistors (TFETs)

Lee, Kwang Seok

2003 ~ 2010            Sogang University (EE), BS

2010 ~ 2012            Sogang University (EE), MS

2012 ~                     Samsung Electronics

Nano-Electromechanical (NEM) Nonvolatile Memory Cells (T cells) for Multi-Bit operation

Lee, Gi Bong

2004 ~ 2011            Sogang University (EE), BS

2011 ~ 2013            Sogang University (EE), MS

2013 ~                     Samsung Electronics

A Study on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors 

Han, Bo Ram

2007 ~ 2011            Sogang University (EE), BS

2011 ~ 2013            Sogang University (EE), MS

2013 ~                     SK Hynix

Fringe Field Effects on Nano-Electromechanical (NEM) Memory Cells 

Lee, Hyun Kook

2005 ~ 2012            Sogang University (EE), BS

2012 ~ 2014            Sogang University (EE), MS

2014 ~                     Samsung Electronics

Hetero-Gate-Dielectric Tunneling Field-Effect Tran-sistors (HG TFETs) for Highly Energy Efficient ICs

Kim, Kwan Yong

2006 ~ 2012              Sogang University (EE), BS

2012 ~ 2014              Sogang University (EE), MS

2014 ~                       Samsung Electronics

Lateral Nano-Electromechanical (NEM) Relays for Reconfigurable Logic

Kang, Jun Geun

2006 ~ 2012              Dankook University (EE), BS

2012 ~ 2014              Sogang University (EE), MS

2014 ~                       SK Hynix

Influence of Random Dopant Fluctuation (RDF) on NAND Flash Memory Cells

Han, Jae Hwan

2007 ~ 2012              Sogang University (EE), BS

2012 ~ 2014              Sogang University (EE), MS

2014 ~                       SK Hynix

Bit-to-Bit Interference of Multi-Bit Nano-Electro-mechanical Memory Cells (T cells)

Choi, Kyung Min

2007 ~ 2013              Sogang University (EE), BS

2013 ~ 2015              Sogang University (EE), MS

2015 ~                       Samsung Electronics

Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)

Kim, Yong Jun

2007 ~ 2013              Sogang University (EE), BS

2012 ~ 2015              Sogang University (EE), MS

2015 ~                       SK Hynix

Nonvolatile Nano-Electromechanical (NEM) Memory Switches for Reconfigurable Logic

Park, Jong Han

2009 ~ 2013             Sejong University (EE), BS

2013 ~ 2016             Sogang University (EE), MS

2016 ~ 2017             National NanoFab Center

2017 ~ 2018             DB Hitek

2018 ~                      ON Semiconductor

Rounded-Corner Tunnel Field-Effect Transistors (RC TFETs) for Performance Enhancement

Cheon, Woo Young

2007 ~ 2013              Sogang University (EE), BS

2013 ~ 2016              Sogang University (EE), MS

2016 ~                       Samsung Electronics

Subthreshold-Slope-Adjustable Tunnel Field-Effect Transistor- Based Random Access Memories (STRAMs) for Low-Power Storage Devices

Kim, Da Som

2009 ~ 2013              Sejong University (EE), BS

2013 ~ 2016              Sogang University (EE), MS

2016 ~                       Hanwha Corporation/Defense

Influence of Electron and Hole Distribution on 2T SONOS Embedded NVMon 2T SONOS Embedded NVM

Kim, Seung Kyu

2008 ~ 2014              Sogang University (EE), BS

2014 ~ 2016              Sogang University (EE), MS

2016 ~                       Samsung Electronics

Three-Dimensional Reconfigurable Logic (RL) Circuits Based on Extremely Low-Power Electron Devices

Choi, Song Hun

2007 ~ 2014           Sogang University (EE), BS

2014 ~ 2016           Sogang University (EE), MS

Process Variation Effects of Tunnel Field Effect Transistors (TFETs) 

Lim, In Eui

2008 ~ 2014              Soongsil  University (EE), BS

2014 ~ 2016              Sogang University (EE), MS

2016 ~                       STATS ChipPAC Korea

Drain Current Modeling of Sub-70-nm PMOSFETs Dependent on Hot-Carrier Stress Bias Conditions

Cha, Tae Min

2007 ~ 2015              Sogang University (EE), BS

2015 ~ 2017              Sogang University (EE), MS

2017 ~                       SK Hynix

Process Development for CMOS-Nano-Electro-mechanical System (NEMS) Co-integration

Huh, In

2009 ~ 2015              Sogang University (EE), BS

2015 ~ 2017              Sogang University (EE), MS

2017 ~                       Samsung Electronics

Mathematical Model of Transition-Metal-Dichalco-genide-Based (TMD-Based) Tunnel Field-Effect Transistors (TFETs)

Lee, Ho Moon

2010 ~ 2016             Sogang University (PHY), BS

2016 ~ 2018             Sogang University (EE), MS

2018 ~                      ASML

Switching Voltage Analysis of Nano-Electromecha-nical (NEM) Memory Switches for CMOS-NEM Hybrid Reconfigurable Logic Applications

Jo, Hyun Chan

2011 ~ 2017             Kyonggi University (AME), BS 

2017 ~ 2019            Sogang University (EE), MS

2019 ~                     DB Hitek

Encapsulation of NEM Memory Switches for Mono-lithic-Three-Dimensional (M3D) CMOS-NEM Hybrid Circuits

Shin, Seong Un

2011 ~ 2017             Dongguk University (PHY), BS 

2017 ~ 2019             Sogang University (EE), MS

2019 ~                     SK Hynix

Degradation Modeling of DRAM Storage Capacitors

Ko, Ji Wang

2012 ~ 2018            Sogang University (EE), BS 

2018 ~ 2020            Sogang University (EE), MS

2020 ~                     Samsung Electronics

Scaling of Monolithic 3D CMOS-Nanoelectro-mechanical Reconfigurable Logic Circuits

Kang, Min Hee

2014 ~ 2018             Sejong University (AME), BS 

2018 ~ 2020             Sogang University (EE), MS

2020 ~                      Samsung Electronics

Low-Operation-Voltage Nanoelectromechanical (NEM) Memory Switches using Dynamic Slingshot Operation

Kang, Min Woo

2012 ~ 2019           Sogang University (PHY), BS

2019 ~ 2021           Sogang University (EE), MS

2021 ~                    ASML

Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Kwon, Hyeok Jin

2010 ~ 2017       Konkook University (PHY, AE), BS

2019 ~ 2021       Sogang University (EE), MS

Offset Contribution Analysis for DRAM Offset Can-cellation Sensing Scheme

Kim, Hye In

2015 ~ 2019           Dankook University (EEE), BS 

2019 ~ 2021           Sogang University (EE), MS

2021 ~                    Samsung Electronics

LTPS (Low-Temperature Polycrystalline Silicon) TFT with an amorphous silicon buffer layer and source/ drain extension

Baek, Gwang Ryeol

2013 ~ 2019           Dankook University (EEE), BS 

2019 ~ 2021           Sogang University (EE), MS

2021 ~                    Samsung Electronics

Tri-State Nanoelectromechanical (NEM) Memory Switches for an Efficient Routing in Reconfigurable Logic

Lee, Jae Seong

2014 ~ 2020           Sogang University (EE), BS

2020 ~ 2022           Sogang University (EE), MS

2022 ~                    Samsung Electronics

Design of Ternary Content-Addressable Memory Using Nanoelectromechanical (NEM) Memory Switches


Yoon, Ji Soo

2015 ~ 2020           Inha University (MSE), BS

2020 ~ 2022           Sogang University (EE), MS

2022 ~                    Samsung Electronics

Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Efficient Routing Operation

Koo, Kyung Min

2014 ~ 2020           Sogang University (EE), BS

2020 ~ 2022           Sogang University (EE), MS

2022 ~                    Samsung Electronics

Analysis of the Gate-Diagonal Tunneling Suppression Effect Using Oxide-Trapped Charge

Woo, Jae Seung

2016 ~ 2020           Sogang University (EE), BS

2020 ~ 2022           Sogang University (EE), MS

2022 ~                    Seoul National U. (EE), PhD student

Investigation of Hot Carrier Injection in Tunnel Field-Effect Transistors

Jung, Chae Lin

2016 ~ 2021               Sogang University (EE), BS

2021 ~ 2023               Sogang University (EE), MS

2023 ~                        Samsung Electronics

Nonvolatile memory based on a tunneling field-effect transistor (TFET) using HfO2 trapping layer

Uhm, Ji Ho

2015 ~ 2021              Sogang University (EE), BS

2021 ~ 2023              Sogang University (EE), MS

2023 ~                       Samsung Electronics

Influence of Azimuthal Charge Redistribution on Data Retention of Hemi-Cylindrical Vertical NAND Flash Memory

Chang, Jin Ho

2014 ~ 2021              Sogang University (LS, EE), BS

2021 ~ 2023              Sogang University (EE), MS

2023 ~                       Seoul National U. (EE), PhD student

Electrical Characteristics of Hemi-Cylindrical Vertical NAND Flash Memory according to Channel Hole Remaining Ratio

Lee, Si Youn

2014 ~ 2021              Dankook University (EEE), BS

2021 ~ 2023              Sogang University (EE), MS

2023 ~                       Samsung Electronics

Snapback Breakdown Voltage Dependence on Source/Drain Configuration in Multi-Finger MOSFETs

Nam, Ki Ryung

2017 ~ 2021              Chungnam National U. (EE), BS

2021 ~ 2023              Sogang University (EE), MS

2023 ~                       Samsung Electronics

Analysis of Electrical Characteristics of PNPN Tunnel Field-Effect Transistors by Pocket Design

Kwak, Kyung Wook

2016 ~ 2022              Sogang University (EE), BS

2022 ~ 2024              Sogang University (EE), MS

2024 ~                       Samsung Electronics

Reliability of the Multi-Finger Gate High-Voltage MOSFETs for the NAND Flash Memory

Ahn, Seung Hyun

2016 ~ 2022              Sogang University (EE), BS

2022 ~ 2024              Sogang University (EE), MS

2024 ~                       Samsung Electronics

Side-Gate MOSFETs for the Suppression of Off-State Breakdown