RTP Asher Etcher RIE ICP DRIE Sputter Evaporator PECVD ALD SEM Probe Metrology Tester Equipment, 200 300mm Wafers, Wafer Carriers, In U.S.A.
Category: Rapid Thermal Processing
Original Equipment Manufacturer: AG Associates
Condition: Used. We sell it at refurbished condition
Valid Time: Subject to prior sale. This is only for end users.
Lead Time: TBD
Quantity: 4 sets
Warranty: TBD
Installation and training: Available at extra charge
Service Contract: Available at extra charge
AG Associates Heatpulse 610 Rapid Thermal Processing equipment description for your reference.
AG ASSOCIATES HEATPULSE 610 RAPID THERMAL PROCESSOR
Manually loaded and capable of processing silicon and III-V substrates up to 150mm in diameter, Heatpulse 610 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Heatpulse 610 offers recipe management and system diagnostics.
Semiconductor grade quartz process chamber
21 tungsten halogen lamps in an upper and lower array
Extended Range Pyrometer: 400°C -1300oC (200°C w/TC)
Graphical User Interface(GUI)
Rebuilt to OEM specs- will look like new system
These capabilities, combined with the heating chamber’s cold-wall design and
superior heating uniformity, provide significant advantages over conventional
furnace processing.
Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
Precise time-temperature profiles tailored to suit specific process requirements.
Fast heating and cooling rates unobtainable in conventional technologies.
Consistent wafer-to-wafer process cycle repeatability.
Elimination of external contamination.
Small footprint and energy efficiency.
Recommended Steady State Temperature Range: 400-1250° C.
Steady-State Temperature Stability: ± 2° C.
Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C.
Heating Rate: 1-200° C per second, user-controllable.
Cooling Rate: Temperature dependent; max 150° C per second.
Maximum Non-uniformity:
±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C.
Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control.
Implant: As 1E16 50 KeV with implant uniformity ≤0.3%
Lamp Life: Unconditionally guaranteed for three years.
Steady State Time: 1-9999 sec. (1-600 sec. recommended)
Wafer Sizes for the HEATPULSE 610: 2″, 3″, 4″, 5″ and 6″.
Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Optional MFC, Up to 4.
GUI software Standard , upgrade to P-CAT
16 bit A/D
Anneal Oxidation :Form a uniform layer of silicon dioxide to insulate a circuit element
Silicidation:Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates
Nitridization:Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings
BSPG Reflow:Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification
Ion Activation:Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity
Platinum Sintering:Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit
Salicidation:Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation