International Conference

International Conference

1.  J. Park, G. Yoon, D. Go, D. Kim, U. An, J. Kim, J. Kim, J. Lee, "Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023.  

2. J. Park, G. Yoon, D. Go, D. Kim, J. Kim, and J.-S. Lee, "Analysis of Vt Gain and Related Lateral Migration Using Program-Erase-Program Pattern in 3-D NAND Flash Memory", International Conference on Solid State Devices and Materials (SSDM), 2021

3.   D. Go, G. Yoon, J. Park, D. Kim, J. Kim, and J.-S. Lee, "Electrical Variations of Non-Circular Cell Structure in 3D NAND Flash Memory Using TCAD-Machine Learning Framework", NANO KOREA 2021 Symposium, Korea, July 7-9, 2021.

4.   G. Lee, J. Ha and J. Kim, "Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)," 2021 IEEE Region 10 Symposium (TENSYMP), Aug. 23-25, 2021.

5.   J. Ha, G. Lee and J. Kim, "Machine Learning Approach for Characteristics Prediction of 4H-Silicon Carbide NMOSFET by Process Conditions," 2021 IEEE Region 10 Symposium (TENSYMP), Jeju(South Korea), Aug. 23-25, 2021.

6.   J.-W. Han, M. Meyyappan, and J. Kim, “Single Event Hard Error due to Terrestrial Radiation"(invited paper), International Reliability and Physics Symposium (IRPS) 2021, virtual conference due to COVID19, May. 21-25, 2021.

7.   G. Yoon, J. Jin, D. Go, J. Park, J. Kim, and J.-S. Lee, Impact of P/E cycling stress on trap distributions in tunneling and blocking layers for 3-D VNAND flash memory applications, International Conference on Electronics, Information, and Communication (ICEIC) 2021, Jeju(South Korea), Jan. 2021.

8.   J. Park, G. Yoon, J. Jin, D. Go, J. Kim, and J.-S. Lee, Effects of Trap Charges in Spacer Region on Retention Variation in 3-D NAND Memory Cells, International Conference on Electronics, Information, and Communication (ICEIC) 2021, Jeju(South Korea), Jan. 2021.

9.   J. Kim, H. Oh, J. Kim, J.-S. Lee, “Effects of Work-function Variation on Analog Figures-of-merits of Inversion-mode and Junctionless Nanowire Transistors”, 16th International conference on nanotechnology (IEEE NANO), Sendai, Japan, Aug. 22-25, 2016.

10.   J. Kim, H. Oh, B. Jin, C.-K. Baek, and J.-S. Lee，"The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel," NANO KOREA 2015 Symposium, Seoul (Coex), Korea, Jul. 1-3, 2015.

11.   H. Oh, J. Kim, B. Jin, and J.-S. Lee，"Electrical Variation of Vertical Macaroni NAND Cells due to Random Grain Boundary Using Voronoi Method," NANO KOREA 2015 Symposium, Seoul (Coex), Korea, Jul. 1-3, 2015.

12.   J. Kim, H. Oh, J. Lee, B. Jin, C.-K. Baek, M. Meyyappan, and J.-S. Lee，"The Temperature Dependence of Threshold Voltage Variations due to Oblique Single Grain Boundary in 3D NAND Unit Cells," The 14th Non-Volatile Memory Technology Symposium (NVMTS 2014), Jeju (Grand Hotel, Korea), Oct. 27–29, 2014.

13.   J. Kim, J. Lee, H. Oh, T. Rim, C.-K. Baek, M. Meyyappan, and J.-S. Lee，"The Variability due to Random Discrete Dopant and Grain Boundary in 3D NAND Unit Cell", 2014 IEEE Nanoelectronic Conference (INEC), Sapporo, Japan, July 28–31, 2014.

14.   B. Jin, J. Kim, D. Kang, Meyya Meyyappan, and J.-S. Lee, "Size-dependent Characteristics of Highly-scalable In2Se3 Nanowire Phase-change Random Access Memory," The 13th IEEE International Conference on Nanotechnology, pp. 849-852, Beijing, China, Aug. 5-8, 2013.

15.   B. Jin, D. Kang, J. Kim, H. Oh, Meyya Meyyappan, and J.-S. Lee, "Diameter-related Characteristics of In2Se3 Nanowire Based Phase Change Memory," The 5th International Symposium on IT Convergence Engineering (ISITCE 2013), Pohang, Korea, Jul. 11-12, 2013.

16.   J. Kim, J. Lee, C.-K. Baek, and J.-S. Lee, “Simulation study of random discrete dopants and grain boundary in polysilicon channel FETs”, The 5th International Symposium on IT Convergence Engineering (ISITCE 2013), Pohang ,Korea, Jul. 11-12, 2013.

17.   D. Kang, K. Davami, J. Kim, M. Meyyappan and J.-S. Lee, “Synthesis and Electrical Characteristics of In2Se3 Nanowire for Phase-Change Memory Applications”, 9th Nano Korea Symposium, Ilsan, Korea, Aug. 24-26, 2011.