Semiconductor Devices · Memory Reliability · Radiation Effects
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OUR RESEACH
Research Areas
Semiconductor
Device Modeling
Physics-based modeling and simulation of advanced semiconductor devices
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Memory Devices &
Reliability
Device modeling and reliability analysis of advanced memory
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Radiation Effects
Radiation-induced degradation and reliability of semiconductor devices
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RECENT PUBLICATIONS
J.Ha, J. Kim* et al., "Radiation effect in FD-SOI nanowire FETs due to high dose rate gamma-ray under variable irradiation temperatures" in ELSEVIER Microelectronics Reliability, Jan. 2026.
J. Ha, J. Kim* et al., "Abnormal Operation of 6-T SRAM based on Nanosheet FET due to Total Ionizing Dose" in IEEE Access, Sep. 2025.
M. Ryu, J. Kim* et al., "Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures" in IEEE Transactions on Electron Devices, Aug. 2025.
M. Ryu, J. Kim* et al., "Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperature" in IEEE Access, Jul. 2025.
D. Lee, J. Kim* et al., "Investigation of TID and DD Effects on FD SOI Nanowire FET Induced by Proton Irradiation" in IEEE Transactions on Electron Devices, Apr. 2025.
JOIN OUR TEAM
Join ASMR Lab.
We welcome students interested in semiconductor devices, TCAD modeling, memory reliability, and radiation effects.
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jhha082@gnu.ac.kr (Jonghyeon Ha)