Ultralow-Power Nonvolatile Memory with Large Resistance Ratio (低操作電壓電阻式記憶體)

The Charge Trapping Flash (CTF) non-volatile memory (NVM) has the lowest switching energy among various NVMs, but the degraded endurance from 105 to 104 cycles at highly scaled device is the basic physical limitation according to ITRS roadmap. Unfortunately, such degraded endurance is unacceptable for high-end product such as solid-state disc, and therefore new NVM device should be developed. The resistive random access memory (RRAM) shows high potential for down scaling beyond CTF, and the simple cross-point structure is more suitable for embedded and low-cost 3D integration.