Embedded Files
D Kannadassan, K Sivasankaran, S Kumaravel, Chun-Hu Cheng, Maryam Shojaei Baghini, PS Mallick, "High-k Metal–Insulator–Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities", Proceedings of the IEEE, vol. 112, pp. 1610, 2024 (2024 IF: 23.2)
Cun-Bo Liu, Ruo-Yin Liao, Hsuan-Han Chen, Zhi-Wei Zheng, Kuan-Hung Su, I-Cheng Lin, Ting-An Liang, Ping-Yu Lin, Chen-Hao Wen, Hsiao-Hsuan Hsu, Chun-Hu Cheng*, Ching-Chien Huang, "Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics", Materials Research Express, vol. 11, pp. 046404, 2024
Chia-Chi Fan, Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Ching-Chien Huang, Hsiao-Hsuan Hsu, Su-Ting Han, Chun-Hu Cheng*, "Nanoscale Ferroelectric Domain Switching and Thickness Scaling Impact in Undoped Hafnium-Oxide Ferroelectric Devices", Thin Solid Films, vol. 799, pp. 140400, 2024
Ruo-Yin Liao, Hsuan-Han Chen, Ping-Yu Lin, Ting-An Liang, Kuan-Hung Su, I-Cheng Lin, Chen-Hao Wen, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng*, "Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices", Materials, vol. 16, pp. 3306, 2023
Zhong-Ying Huang, Hsuan-Han Chen, Ruo-Yin Liao, Hsiao-Hsuan Hsu, Kuan-Hsiang Lin, Wei-Ting Chen, Shih-Hao Lin, Ching-Chien Huang, Wu-Ching Chou, Chun-Hu Cheng* , "Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment ", Thin Solid Films, vol. 755, pp. 139345, 2022
Yi-Wei Fang, Zih-Jing Yang, Ruo-Yin Liao, Pei-Tien Chen, Cun-Bo Liu, Kai-Yang Huang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Wu-Ching Chou, Shih-Hao Lin, Ye Zhou, "Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides ", Thin Solid Films, vol. 757, pp. 139395, 2022
Jui-Hsuan Chang, Chen-Gui Zheng, Hsuan-Han Chen, Pei-Tien Chen, Cun-Bo Liu, Kai-Yang Huang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Wu-Ching Chou, Su-Ting Han, "Effect of capping layer on the ferroelectricity of hafnium oxide", Thin Solid Films, vol. 753, pp. 139274, 2022
Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng*, Ching-Chien Huang , "Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering", IEEE Journal of the Electron Devices Society , vol. 10, pp. 947-952, 2022
Chun-Hu Cheng, Wei-Ting Chen, Kuan-Hsiang Lin, Hsuan-Han Chen, Ruo-Yin Liao, Ching-Chien Huang, Shih-Hao Lin, Hsiao-Hsuan Hsu, "Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film", ECS Journal of Solid State Science and Technology, vol. 11, 8, pp. 083013, 2022
Huang, C. C., Lin, S. H., Mo, C. C., Hsiao, T. H., Tai, Y. H., Hung, Y. H., Chiu, C. H., Hsu, H. H. & Cheng, C. H.*, "Development of Optimum Preparation Conditions of Fe-Deficient M-Type Ca-Sr-La System Hexagonal Ferrite Magnet", IEEE Transactions on Magnetics, 57, 2, 9277610, 2021
Hsiao-Hsuan Hsu, Hsiu-Ming Liu, Sheng Lee and Chun-Hu Cheng*, “Impact of Stress and Doping Effects on the Polarization Behavior and Electrical Characteristics of Hafnium-Zirconium Oxides”, Ceramics International, vol. 47, pp. 2864-2868, 2021.
Zong-Wei Shang, Qian Xu, Guan-You He, Zhi-Wei Zheng, Chun-Hu Cheng*, "Effect of Plasma Oxidation on Tin-Oxide Active Layer for Thin-Film Transistor Applications", Journal of Materials Science, vol. 56, pp. 6286-6291, 2021.
C. C. Huang, C. C. Mo, T. H. Hsiao, S. H. Lu, Y. H. Tai, H. H. Hsu, C. H. Cheng* “Development of Optimum Preparation Conditions of Fe-Deficient M-type Ca-Sr System Hexagonal Ferrites,” IEEE Transactions on Magnetics, vol. 57, pp. 1-9, 2020
C. C. Huang, C. C. Mo, T. H. Hsiao, G. M. Chen, S. H. Lu, Y. H. Tai, H. H. Hsu, C. H. Cheng* “Preparation and Magnetic Properties of High Performance Ca–Sr based M-type Hexagonal Ferrites,” Results in Materials, vol. 8, pp. 100150, 2020
C. H. Cheng*, C. Liu, Y. C. Tung, H. H. Chen, L. R. Yin, W. C. Chou, “P-Type Ferroelectric Field Effect Transistor Using Ultrathin Hafnium Aluminium Oxide,” Physica Status Solidi Rapid Research Letters, vol. 14, pp. 2000356, 2020
W. D. Liu, Z. Y. Huang, J. Ma, Z. W. Zheng, and C. H. Cheng*, "Impact of Series-Connected Ferroelectric Capacitor in HfO2-Based Ferroelectric Field-Effect Transistors for Memory Application", IEEE Journal of the Electron Devices Society, vol. 8, pp. 1076-1081, 2020
Kadiyam Rajshekar, Hsiao-Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun-Hu Cheng* and D. Kannadassan, “Physical Modeling of p-type Fluorinated Al-doped Tin-Oxide Thin Film Transistors", IEEE Journal of the Electron Devices Society, vol. 8, pp. 948-958, 2020.
Z. W. Shang, J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, and C. H. Cheng, "Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing", IEEE Journal of the Electron Devices Society, vol. 8, pp. 485-489, 2020.
Chien Liu, Hsuan-Han Chen, Yi-Chun Tung, Wei-Chun Wang, Zhong-Ying Huang, Bing-Yang Shih, Szu-Yen Hsiung, Shih-An Wang, Yu-Chi Fan, Tsung-Ming Lee, Chien-Liang Lin, Zi-You Huang, Hsiu-Ming Liu, Sheng Lee, Wu-Ching Chou, Chun-Hu Cheng and Hsiao-Hsuan Hsu, "High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing", Journal of Japan Applied Physics, vol. 59, pp. SGGA01, 2020.
Tsung-Ming Lee, Chien-Liang Lin, Yu-Chi Fan, Sheng Lee, Wei-Dong Liu, Hsiu-Ming Liu, Zi-You Huang, Zhi-Wei Zheng, Shih-An Wang, Chun-Hu Cheng, and Hsiao-Hsuan Hsu,"A Comparative Study of Metal-Ferroelectric-Metal Devices Using Doped- and Stacked- Hafnium Zirconium Oxides", Thin Solid Films, vol. 701, pp. 137927, 2020.
Z. W. Shang, H. H. Hsu, Z. W. Zheng, and C. H. Cheng, “Progress and Challenges in P-Type Oxide-Based Thin Film Transistors,” Nanotechnology Reviews, vol. 8, pp. 422-443, 2019
J. Ma, C. Liu, W. Dong, H. H. Hsu, Z. W. Zheng, and C. H. Cheng “Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect,” IEEE Transactions on Nanotechnology, vol. 19, pp. 89-93, 2019
C. Liu , Y. C. Tung, C. Y. Tseng, W. C. Wang, H. H. Chen, T. M. Lee, W. C. Chou, Z. W. Zheng, C. H. Cheng, and H. H. Hsu, “Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering,” ECS Journal of Solid State Science and Technology, vol. 8, no. 10, pp. 553 556, 2019.
C. Liu , Y. C. Tung, T. L. Wu, C. H. Cheng, C. Y. Tseng, H. H. Chen, H. H. Chen, J. Ma, C. L. Lin, Z. W. Zheng, W. C. Chou, and H. H. Hsu, “Gamma Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides,” Physica Status Solidi Rapid Research Letters, vol. 13, pp. 1900414, 2019
Kadiyam Rajshekar, Hsiao Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun-Hu Cheng* and D. Kannadassan, "Effect of plasma fluorination in p-type SnO TFTs: Experiments, Modeling and Simulation", IEEE Transactions on Electron Devices, vol. 66, pp. 1314-1321, 2019
Tun-Jen Chang, Chien Liu, Chia-Chi Fan, Hsiao-Hsuan Hsu, Hsuan-Han Chen, Wan-Hsin Chen, Yu-Chi Fan, Tsung-Ming Lee, Chien-Liang Lin, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng*, Shih-An Wang, and Chun-Yen Chang, " Investigation on Polarization Characteristics of Ferroelectric Memories with Thermally Stable Hafnium Aluminum Oxides", Vacuum, vol. 166, pp. 11-14, 2019
Ching-Chien Huang, Chih-Chieh Mo, Yung-Hsiung Hung, Wei-Zong Zuo, Jing-Yi Huang, Hsiao-Hsuan Hsu, and Chun-Hu Cheng*, "Effect of Particle Size of as-milled powders on Microstructural and Magnetic Properties of Y3MnxAl0.8-xFe4.2O12 Ferrites", Journal of the American Ceramic Society, vol. 102, pp. 3525-3534, 2019
Chun-Hu Cheng*, Chia-Chi Fan, Chun-Yuan Tu, Hsiao-Hsuan Hsu and Chun-Yen Chang, "Implementation of Dopant-Free Hafnium-Oxide Negative Capacitance Field-Effect Transistor", IEEE Transactions on Electron Devices, vol. 66, pp. 825-828, 2019
Chun-Hu Cheng*, Chia-Chi Fan, Chien Liu, Wan-Hsin Chen, Hsiao-Hsuan Hsu, Shih-An Wang, and Chun-Yen Chang, "Investigation of Gate Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides", IEEE Transactions on Electron Devices, vol. 66, pp. 1082-1086, 2019
Chun-Hu Cheng*, Chia-Chi Fan, Hsiao-Hsuan Hsu, Shih-An Wang, and Chun-Yen Chang, "Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering", Physica Status Solidi- Rapid Research Letters, vol. 13, pp. 1800493, 2019
Chun-Hu Cheng*, Ming-Huei Lin, Hsin-Yu Chen, Chia-Chi Fan, Chien Liu, Hsiao-Hsuan Hsu, and Chun-Yen Chang, "Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors", Physica Status Solidi- Rapid Research Letters, vol. 66, pp. 1800573, 2019
Chien Liu, Chun-Hu Cheng*, Ming-Huei Lin, Yi-Jia Shih, Yu-Wen Hung, Yu-Chien Chiu, Wu-Ching Chou, Hsiao-Hsuan Hsu and Chun-Yen Chang, "Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels," ECS Journal of Solid State Science and Technology, vol. 7, pp. Q242-245, 2018
Chun-Hu Cheng*, A. Chin, and Hsiao-Hsuan Hsu, “Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows,” Journal of Nanoscience and Nanotechnology, vol. 19, pp. 7916-7919, 2018
Y. L. Chen, G. L. Liou, H. H. Hsu, P. C. Chen, Z. W. Zheng, Y. H. Wu, C. H. Cheng*, C. H. Liu, L. H. Chung, “Low-Voltage Metal-Oxide Thin Film Transistors Using P-type Tin-Oxide Semiconductors”, Journal of Nanoscience and Nanotechnology, vol. 19, pp. 5619-5623, 2018
M. H. Lin, C. C. Fan, H. H. Hsu, C. Liu, K. M. Chen, C. H. Cheng* and C. Y. Chang, "On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack," ECS Journal of Solid State Science and Technology, vol. 7, pp. Q242-Q245, 2018
Ching-Chien Huang, Yung-Hsiung Hung, Jing-Yi Huang, Ming-Feng Kuo, Wei-Zong Zuo, Chun-Hu Cheng* "Effect of Specific Surface Area of Raw Material Fe2O3 on Magnetic Properties of YIG" Journal of Magnetism and Magnetic Materials, vol. 449, pp. 157-164, 2018
Ching-Chien Huang, Yung-Hsiung Hung, Jing-Yi Huang, Ming-Feng Kuo, Wei-Zong Zuo, Chun-Hu Cheng* "Influence of CaCO3 and SiO2 Additives on Magnetic Properties of M-type Sr Ferrites" Journal of Magnetism and Magnetic Materials, vol. 451, pp. 288-294, 2018
Hsuan-ling Kao, Yung-Hsien Wu, Li-Chun Chang, Chun-Hu Cheng "Direct Fabrication of inkjet-printed dielectric film for metal-insulator-metal capacitors", Journal of Electronic Materials, vol, 47, pp. 677-683, 2018
Hsien-Chin Chiu, Min-Li Chou, Chun-Hu Cheng, Hsuan-ling Kao, Cheng-Lin Cho, "Effect of Body Bias and Temperature on Low-Frequency Noise in 40-nm nMOSFETs", Microelectronics Reliability, vol. 78, pp. 267-271, 2017
Chun-Hu Cheng*, Yu-Chien Chiu and Guan-Lin Liou, "Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory", Physica Status Solidi- Rapid Research Letters, vol. 11, pp. 1700098, 2017
Shiang-Shiou Yen, Chun-Hu Cheng*, Chia-Chi Fan, Yu-Chien Chiu, Hsiao-Hsuan Hsu, Yu-Pin Lan, and Chun-Yen Chang, "Investigation of Double Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure", IEEE Transactions on Electron Devices, vol. 64, pp. 4200-4205, 2017
C. C. Fan, Y. C. Chiu, C. Liu, W. W. Lai, C. H. Cheng*, D. L. Lin, G. R. Li, Y. H. Lo, C. W. Chang, C. C. Tsai and C. Y. Chang, “The Impact of the STI effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor,” Journal of Nanoscience and Nanotechnology, 2017
P. C. Chen, Y. C. Chiu, Z. W. Zheng, M. H. Lin, G. L. Liou, H. H. Hsu, C. H. Cheng*, H. L. Kao, "Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors", IEEE Transactions on Nanotechnology, vol. 16, pp. 876-879, 2017
H. C. Wen, W. C. Chou, P. C. Lin, Y. R. Jeng, C. C. Chen, H. M. Chen, D. S. Jiang, C. H. Cheng, "Using nanoindentation to investigate the temperature cycling of Sn-37Pb solders", Microelectronics Reliability, vol. 78, pp. 267-271, 2017
Yu-Chien Chiu, Chun-Hu Cheng*, Guan-Lin Liou, and Chun-Yen Chang, "Energy-Efficient Versatile Memories with Ferroelectric Negative Capacitance by Gate-Strain Enhancement", IEEE Transactions on Electron Devices, vol. 64, pp. 3498-3501, 2017
Ching-Chien Huang, Ai-Hua Jiang, Ching-Hsuan Liou, Yi-Chen Wang, Chi-Ping Lee, Tong-Yin Hung, Chun-Chung Shaw, Yung-Hsiung Hung, Ming-Feng Kuo, and Chun-Hu Cheng*, "Magnetic property enhancement of cobalt-free M-type strontium hexagonal ferrites by CaCO3 and SiO2 addition", Intermetallics, vol. 89, pp. 111-117, 2017
Hsuan-Ling Kao, Chih-Sheng Yeh, Hsien-Chin Chiu, Cheng-Lin Cho, and Chun-Hu Cheng “A High Output Power and Low Phase Noise GaN HEMT VCO With Array of Switchable Inductors”, International Journal of Circuit Theory and Applications, vol. 45, pp. 1621-1636, 2017
M. H. Lin, Y. C. Lin, Y. S. Lin, W. J. Sun, S. H. Chen,, Y. C. Chiu, C. H. Cheng*, and C. Y. Chang, "Investigation of Electrical Characteristics on 25-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric," ECS Journal of Solid State Science and Technology, vol. 6, pp. Q58-Q62, 2017
Yu-Chien Chiu, Chun-Hu Cheng*, Chun-Yen Chang, Ying-Tsan Tang, and Min-Cheng Chen, "Investigation of Strain-Induced Phase Transformation in Fer-roelectric Transistor Using Metal-Nitride Gate Electrode", Physica Status Solidi- Rapid Research Letters, vol. 11, pp. 1600368, 2017 (selected as front cover)
Y. C. Chiu, Z. W. Zheng, C. H. Cheng*, P. C. Chen, S. S. Yen, C. C. Fan, H. H. Hsu and C. Y. Chang, "Electrical Instability of InGaZnO Thin Film Transistors with and without Titanium Sub-Oxide Layer Under Light Illumination" Applied Physics A, vol. 123, pp. 188, 2017
Hwann-Kaeo Chiou, Kuo cheng, Tseng chiu, Chun-Hu Cheng, chien Shih, Tung huang, "The new FCL with HTS for the High-speed Communication System", Microwave and Optical Technology Letters, vol. 59, pp. 964-966, 2017
Yu-Chien Chiu , Chun-Hu Cheng*, Chun-Yen Chang, Ying-Tsan Tang , and Min Cheng Chen, "Investigation of Strain-Induced Phase Transformation in Ferroelectric Transistor Using Metal-Nitride Gate Electrode", Physica Status Solidi (RRL) - Rapid Research Letters, vol. 11, pp. 1600368 2017
Po-Chun Chen, Yu-Chien Chiu, Zhi-Wei Zheng, Chun-Hu Cheng*, and Yung Hsien Wu, "Influence of plasma fluorination on p-type channel tin oxide thin film transistors", Journal of Alloys and Compounds, vol. 707, pp. 162-166, 2017
Y. C. Chiu, P. C. Chen, S. L. Chang, Z. W. Zheng, C. H. Cheng*, Y. H. Wu, and C. Y. Chang, "Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first principles calculation," ECS Journal of Solid State Science and Technology, vol. 6, pp. Q53, 2017
Po-Chun Chen, Yu-Chien Chiu, Guan-Lin Liou, Zhi-Wei Zheng, Chun-Hu Cheng*, and Yung-Hsien Wu, "Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment", IEEE Electron Device Lett., vol. 38, pp. 210-212, 2016
Po-Chun Chen, Yu-Chien Chiu, Zhi-Wei Zheng, Chun-Hu Cheng*, and Yung Hsien Wu, "P-type tin-oxide thin film transistors for blue-light detection application", Physica Status Solidi- Rapid Research Letters, vol. 10, pp. 919-923, 2016
S. S. Yen, C.H Cheng*, Y. P. Lan, Y. C. Chiu, C. C. Fan, H. H. Hsu, S. C. Chang, Z. W. Jiang, L. Y. Hung, C. C. Tsai, and C. Y. Chang “High Holding Voltage Segmentation Stacking SCR Structure with Field Implant as Body Ties Blocking Layer,” Jpn. J. Appl. Phys, vol. 55, pp. 04ER10, 2016.
P. C. Chen, Y. H. Wu, Z. W. Zheng, Y. C. Chiu, C. H. Cheng*, S. S. Yen, H. H. Hsu, and C. Y. Chang, “Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin Film Transistor Application,” IEEE/OSA Journal of Display Technology, vol.12, pp. 224-227, 2016
S. S. Ye, Y. C. Chiu, C. H. Cheng*, P. C. Chen, Y. C. Yeh, C. H. Tung, H. H. Hsu, and C. Y. Chang“Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications,” IEEE/OSA Journal of Display Technology, vol. 12, pp. 219-223, 2016
D. R. Islamov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, and A. Chin, “Charge Transport in amorphous Hf0.5Zr0.5O2,” Appl. Phy. Lett., vol. 106, pp. 102906, 2015
S. S. Yen, H. H. Hsu, P. Chiou, C. H. Cheng*, C. H. Tung, Y. C. Lai, H. W. Li, C. P. Chang, H. H. Lu, C. S. Chuang, Y. H. Lin and C. Y. Chang “Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel,” Jpn. J. Appl. Phys, vol. 54, pp. 04DF05, 2015.
Chin-Pao Cheng, Chuan-Pu Chou, Che-Hsiang Hsu, Tun-Chien Teng, Chun-Hu Cheng*, and Yu-Yang Syu “Investigation of Mechanical Bending Instability in Flexible Low-Temperature-Processed Electrochromic Display Devices,” Thin Solid Films, vol. 584, pp. 94-97, 2015.
V. N. Kruchinin, V. S. Aliev, T. V. Perevalov, D. R. Islamov, V. A. Gritsenko, I. P. Prosvirin, C. H. Cheng. A. Chin, “Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM,” Microelectronic Engineering, vol. 147, pp. 165-167, 2015
C. H. Cheng*, H. H. Hsu and K. I. Chou, “TiO2-based InP Metal-Oxide-Capacitor with High Capacitance Density,” Journal of Nanoscience and Nanotechnology, vol. 15, pp. 2810, 2015
C. H. Cheng*, K. I. Chou and H. H. Hsu, “Low-Voltage InGaZnO Thin Film Transistors with Small Sub-threshold Swing,” Journal of Nanoscience of Nanotechnology, vol. 15, pp. 1486, 2015
H. H. Hsu, Y. C. Chiu, P. Chiou, and C. H. Cheng*, “Improvement of Dielectric Flexibility and Electrical Properties of Mechanically Flexible Thin Film Devices Using Titanium Oxide Materials Fabricated at a Very Low Temperature of 100°C,” Journal of Alloys and Compounds, vol. 643, pp. S133-S136, 2014
S. S. Yen, H. H. Hsu, P. Chiou, C. H. Cheng*, C. H. Tung, Y. C. Lai, H. W. Li, C. P. Chang, H. H. Lu, C. S. Chuang, Y. H. Lin and C. Y. Chang “Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel,” Jpn. J. Appl. Phys, vol. 54, pp. 04DF05, 2015.
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and A. Chin, “Percolation conductivity in hafnium sub-oxides,” Appl. Phy. Lett., vol. 105, pp. 262903, 2014
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and A. Chin, “Origin of traps and charge transport mechanism in hafnia,” Appl. Phy. Lett. vol. 105, pp. 222901, 2014
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and A. Chin, “Charge Carrier Transport Mechanism in High-k Dielectrics and Their Based Resistive Memory Cells,” Optoelectronics, Instrumentation and Data Processing, vol. 50, pp. 310-314, 2014.
Wun-Kai Wang, Hua-Chiang Wen, Chun-Hu Cheng, Wu-Ching Chou, Wei-Hung Yau, Ching-Hua Hung, Chang-Pin Chou “Nanotribological Properties of ALD-Processed Bilayer TiO2/ZnO Films,” Microelectronics Reliability, vol. 54, pp. 2754-2759, 2014.
H. H. Hsu, C. H. Cheng*, P. Chiou, Y. C. Chiu, S. S. Yen, C. H. Tung and C. Y. Chang, “Temperature-Dependent Transfer Characteristics of Low Turn-On Voltage InGaZnO Metal-Oxide Devices with Thin Titanium Oxide Capping Layers,” IEEE/OSA Journal of Display Technology, vol. 11, pp. 512-517, 2014
H. H. Hsu, P. Chiou, C. H. Cheng*, S. S. Yen, C. H. Tung, C. Y. Chang, Y. C. Lai, C. P. Chang, H. H. Lu, C. S. Chuang, and Y. H. Lin, “Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications,” IEEE/OSA Journal of Display Technology, vol. 11, pp. 1-1, 2014
H. H. Hsu, C. H. Cheng*, P. C. Chen and C. P. Cheng, “High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-k Gate Dielectrics,” IEEE/OSA Journal of Display Technology, vol. 10, pp. 847-853, 2014
Hsiao-Hsuan Hsu, Chun-Hu Cheng*, Ping Chiou, Yu-Chien Chiu, and Zhi-Wei Zheng, “Amorphous Bilayer TiO2-InGaZnO Thin Film Transistors with Low Drive Voltage,” Solid-State Electronics, vol. 99, pp.51-54, 2014
H. H. Hsu, C. Y. Chang, C. H. Cheng*, S. H. Chiou, C. H. Huang, Y. C. Chiu, “An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-based TFTs,” IEEE Trans. on Nanotechnology, vol. 13, pp. 933-938, 2014
Chin-Pao Cheng, Yi Kuo, Chun-Hu Cheng* and Zhi-Wei Zheng, “Operation Mechanism Investigation of Electrochromic Display Devices Using Tungsten Oxide Based on Solid-State Metal-Oxide-Metal Capacitor Structures,” Solid-State Electronics, vol. 99, pp.16-20, 2014.
T. L. Chang, C. F. Chang, Y. W. Lee, C. H. Cheng, C. Y. Chou, and M. C. Huang, “Design of Self-Alignment Devices with Fluidic Self-Assembly for Flip Chip Packages in Batch Processing,” Advanced Materials Research, vol. 918, pp.79-83, 2014.
Z. W. Zheng, H. H. Hsu, and C. H. Cheng*, “Improvement of High-Temperature Switching Characteristics of Y2O3/TiOx Resistive Memory Through Carrier Depletion Effect,” Physica Status Solidi (RRL), vol. 8, pp.431-435, 2014
Z. W. Zheng, H. H. Hsu, P. C. Chen and C. H. Cheng*, “The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive Memories,” Journal of Nanoscience and Nanotechnology, vol. 15, pp. 4431, 2014
Chin-Pao Cheng, Yi Kuo, Chuan-Pu Chou, Chun-Hu Cheng* and Tun Ping Teng, “Performance Improvement of Electrochromic Display Devices Employing Micro-Size Precipitates of Tungsten Oxide,” Applied Physics A, vol. 116, pp.1553-1559, 2014
K. I. Chou, C. H. Cheng, and Albert Chin “Performance Comparison of Titanium-Oxide Resistive Switching Memories Using GeOx and AlOx Capping Layers for Flexible Application,” Jpn. J. Appl. Phys, vol. 53, pp. 061502, 2014.
H. H. Hsu, C. H. Cheng*, S. H. Chiou, C. H. Huang and C. M. Liu, Y. L. Lin, W. H. Chao, P. H. Yang, C. Y. Chang and C. P. Cheng, “Structural Stability of Diffusion Barriers in Thermoelectric SbTe: From First-Principles Calculations to Experimental Results,” Journal of Alloys and Compounds, vol. 588, pp.633-637, 2014
C. H. Cheng and A. Chin, “Low-Voltage Steep Turn-on p-MOSFET Using Ferroelectric High-k Gate Dielectric,” IEEE Electron Device Lett., vol. 35, pp. 274-276, 2014.
Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng*, Shan-Haw Chiou and Chiung-Hui Huang, “High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO,” IEEE Electron Device Lett., vol. 35, pp. 87-89, 2014
C. H. Cheng and A. Chin, “Low-Leakage-Current DRAM-like Memory Using a One-Transistor Ferroelectric MOSFET with a Hf-based Gate Dielectric,” IEEE Electron Device Lett., vol. 34, pp. 138-140, 2014
S. Y. Liao, C. C. Lu, T. Chang, C. F. Huang, C. H. Cheng* and L. B. Chang, “Gate Length Scaling Effect on HEMT Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures,” Journal of Nanoscience of Nanotechnology, vol. 14, pp. 6243, 2014
C. H. Cheng*, “Schottky-barrier Resistive Memory with Highly Uniform Switching,” Journal of Nanoscience of Nanotechnology, vol. 14, pp. 5166, 2014
N. H. Chen, Z. W. Zheng, C. H. Cheng*, and F. S. Yeh, “Sub-Micro-Watt Resistive Memories Using Nano-crystallized Aluminum Oxynitride Dielectric,” Applied Physics A, vol. 117, pp. 575-579, 2013
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and A. Chin, “Evolution of the conductivity type in Germania by varying the stoichiometry,” Appl. Phy. Lett., vol. 103, pp. 232904, 2013
C. H. Cheng*, K. I. Chou, Z. W. Zheng and H. H. Hsu, “Low Power Resistive Random Access Memory Using Interface-Engineered Dielectric Stack of SiOx/a-Si/TiOy with 1D1R-Like Structure,” Current Applied Physics, vol. 14, pp. 139-143, 2013
Z. W. Zheng, H. H. Hsu, and C. H. Cheng* “Interface-Engineered Resistive Memory Using Plasma-Modified Electrode on Polyimide Substrate,” Physcia Status Solidi (RRL), vol. 8, pp. 100-104, 2013
Z. W. Zheng, C. H. Cheng and Y. C. Chen, “Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation” ECS Journal of Solid State Science and Technology, 2(9), N179-N181, 2013
Hsiao-Hsuan Hsu, Chun-Hu Cheng*, Yu-Li Lin, Shan-Haw Chiou, Chiung-Hui Huang, and Chin-Pao Cheng, “Structural Stability of Thermoelectric Diffusion Barriers: Experimental Results and First Principles Calculations,” Appl. Phy. Lett., vol. 103, pp. 053902, 2013
H. H. Hsu, C. Y. Chang, C. H. Cheng*, S. H. Yu, C. Y. Su and C. Y. Su, “Fully Room-Temperature IGZO Thin Film Transistors Adopting Stacked Gate Dielectrics on Flexible Polycarbonate Substrate,” Solid-State Electronics, vol. 89, pp. 194-197, 2013
W. K. Wang, H. C. Wen, C. H. Cheng, W. C. Chou, W. H. Yau, C. H. Hung, and C. P. Chou “Nanotribological behavior of ALD-derived ZnO films” Journal of Physics and Chemistry of Solids, (accepted), 2013
S. Y. Liao, T. Chang, H. H. Hsu, C. H. Cheng*, L. B. Chang, C. P. Cheng and T. C. Teng, “Crystallized Ohmic Contact Effect in AlGaN/GaN High Mobility Transistor,” Jpn. J. Appl. Phys, vol. 52, pp. 081001, 2013
H. H. Hsu, C. Y. Chang, and C. H. Cheng* “Room-temperature Flexible Thin Film Transistor with High Mobility,” Current Applied Physics, vol. 13, pp. 1459-1462, 2013
H. H. Hsu, C. Y. Chang and C. H. Cheng* “A Flexible IGZO Thin Film Transistor with Stacked TiO2-based Dielectrics Fabricated at Room Temperature,” IEEE Electron Device Lett., vol. 34, pp. 768-770, 2013.
H. H. Hsu, C. Y. Chang, and C. H. Cheng* “High Performance IGZO/TiO2 Thin Film Transistors Using Y2O3 Buffer Layers on Polycarbonate Substrate,” Applied Physics A, vol. 112, pp. 817-820, 2013
C. H. Cheng*, K. I. Chou, and A. Chin “Gate-First n-MOSFET with a Sub-0.6-nm EOT Gate Stack,” Microelectronic Engineering, vol. 109, pp. 35-38, 2013
C. H. Cheng*, and A. Chin “Evaluation of Temperature Stability of Tri-layer Resistive Memories Using Work-Function Tuning,” Applied Physics Express, vol. 6, p. 041203, 2013
H. H. Hsu, C. Y. Chang, and C. H. Cheng* “Flexible IGZO TFT Stacked Y2O3/TiO2/Y2O3 Gate Dielectrics Grown at Room Temperature,” Physcia Status Solidi (RRL), vol. 7, pp. 285-288, 2013
C. H. Cheng*, and A. Chin “Nano-Crystallized Titanium Oxide Resistive Memory with Uniform Switching and Long Endurance,” Applied Physics A, vol. 101, pp. 203-207, 2013
C. H. Cheng*, K. I. Chou and A. Chin “Achieving Low Sub-0.6-nm EOT in Gate-Firstn-MOSFET with TiLaO/CeO2 Gate Stack,”Solid-State Electronics, vol. 82, pp. 111-114, 2013
Z. W. Zheng, C. H. Cheng, K. I Chou, M. Liu and Albert Chin “Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode,” Appl. Phy. Lett., vol. 101, p. 243507, 2012
K. I. Chou, C. H. Cheng, Z. W. Zheng, M. Liu and Albert Chin “Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate with Excellent Resistance Distribution,” IEEE Electron Device Lett., vol. 34, pp. 505-207, 2013
H. H. Hsu, C. H. Cheng*, C. K. Lin, K. Y. Chen and Y. L. Lin, “Tantalum Nitride for Copper Diffusion Blocking on Thin Film (BiSb)2Te3,” 2012 MRS Fall Meeting Proceeding, vol. 1490, p. 1-6 (2013)
D. R. Islamov, V. A. Gritsenko, C. H. Cheng and A. Chin “Bipolar Conductivity in Nanocrystallized TiO2,” Appl. Phy. Lett., vol. 101, p. 032101, 2012
C. H. Cheng*, Tsu Chang, Sheng Yu Liao, Wei Der Ho, Yen Cen Shiau, Jen Shu Sen and H. M. Chang “Surface Conduction Mechanism in AlGaN/GaN High Electron Mobility Transistors with Pre-Gate Treatment” ECS Transactions, vol. 50, 53-60, 2013
A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng and A. Chin “Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps,” Appl. Phy. Lett., vol. 100, p. 243506, 2012
Albert Chin, Y. C. Chiu, C. H. Cheng, Y. C. Hiu, Z. W. Zheng and M. Liu “Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism” ECS Transactions, vol. 50, (4), p. 3-8 (2013)
H. H. Hsu, C. H. Cheng, C. H. Yeh, Y. W. Chou, Y. L. Lin, Y. R. Chen and C. C. Yang “Thermoelectric Characteristics of Annealed N-Type BiTe Thin Film” ECS Transactions, vol. 41, (34), p. 27-36 (2012)
C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh and Albert Chin “Highly Uniform Low-Power Resistive Memory Using Nitrogen-Doped Tantalum Pentoxide,” Solid-State Electronics, vol. 73, pp. 60-63, 2012.
C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh and Albert Chin “Long Endurance Nano-Crystal TiO2 Resistive Memory Using TaON Buffer Layer,” IEEE Electron Device Lett., vol. 32, pp.1749-1751, 2011.
D. R. Islamov, V. A. Gritsenko, C. H. Cheng and A. Chin “Bipolar Conductivity in Amorphous HfO2,” Appl. Phy. Lett., vol. 99, p. 072109, 2011
S. L. Lin, H. M. Chang, T. Chang, H. L. Kao, C. H. Cheng, and Albert Chin “The reliability study and device modeling for p-HEMT microwave power transistors” ECS Transactions, vol. 41, (6), p. 175-187 (2011)
C. Y. Tsai, C. H. Cheng, T. Y. Chang, K. C. Chou, Albert Chin and F. S. Yeh “Size-dependent trapping effect in nano-dot non-volatile memory” ECS Transactions, vol. 41, (3), p. 121-132 (2011)
K. I. Chou, C. H. Cheng, P. C. Chen, Albert Chin and F. S. Yeh “Unipolar GeOx/PZT Resistive Switching Memory,” Jpn. J. Appl. Phys, vol. 50, p. 121801, 2011.
Tian-Li Wu, Chih-Fang Huang and C. H. Cheng, “Characteristic of 4H-SiC RF MOSFET on a Semi-insulating Substrate,” ECS Transactions, vol. 35, (6), p. 173-183 (2010)
C. H. Cheng, P. C. Chen, H. H. Hsu, Albert Chin and F. S. Yeh “Bipolar switching characteristics of low-power GeO resistive memory,” Solid-State Electronics, vol. 62, pp. 90-93, 2011.
C. Y. Tsai, T. H. Lee, C. H. Cheng, Hong Wang, and Albert Chin “Highly-Scaled Charge-Trapping Layer of ZrON Non-Volatile Memory Device with Good Retention,” Appl. Phy. Lett., vol. 97, p. 213504, 2010
C. H. Cheng, Albert Chin and F. S. Yeh “Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance,” Advanced Materials, vol.23, pp. 902-905, 2011.
C. H. Cheng, Albert Chin and F. S. Yeh “Ultra-low Switching Energy Ni/GeOx/HfON/TaN RRAM,” IEEE Electron Device Lett., vol. 32, no. 3, pp. 366-368 , 2011
K. M. Chang, S. S. Huang and C. H. Cheng, “Flow Rate’s Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Plasma Jet for Organic Thin Film Transistor Application,” ECS Transactions, vol. 33, (5), p. 255 (2010)
C. H. Cheng, C. C. Huang, H. H. Hsu, K. C. Chiang, B. H. Liou, Albert Chin and F. S. Yeh “A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 RF Capacitor,” Electrochemical and Solid-State Letters, 13 (12), H436-H439, 2010.
C. H. Cheng, Albert Chin and F. S. Yeh “Stacked GeO/SrTiO Resistive Memory with Ultra-Low Resistance Currents,” Appl. Phy. Lett., vol. 98, pp. 052905, 2011.
C. H. Cheng, Albert Chin and F. S. Yeh “Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory,” IEEE Electron Device Lett., vol. 31, no. 9, pp. 1020-1022, 2010.
W. B. Chen, C. H. Cheng, C. W. Lin, P. C. Chen, Albert Chin “High Field Mobility Metal-Gate/high-κ Ge n-MOSFETs with Small Equivalent-Oxide-Thickness,” Solid-State Electronics, vol. 55, pp. 64-67, 2011.
W. B. Chen, C. H. Cheng and Albert Chin “High Performance Gate-first Epitaxial Ge n-MOSFETs on Si with LaAlO3 Gate Dielectrics,” IEEE Trans. Electron Device, vol. 57, pp. 3525-3530, 2010.
B. Y. Tsui, H. H. Hsu, C. H. Cheng “High Performance Metal-Insulator-Metal (MIM) Capacitors with HfTiO/Y2O3 Stack Dielectric” IEEE Electron Device Lett., vol. 31, no. 8, pp. 875-877, 2010.
C. H. Cheng, C. K. Deng, H. H. Hsu, P. C. Chen, Albert Chin and F. S. Yeh “Lanthanide-Oxides Mixed TiO2 Dielectrics for High-k MIM Capacitors,” J. Electrochem. Soc., vol. 157, p. H821-H824, 2010.
C. H. Cheng, H. H. Hsu, Albert Chin and F. S. Yeh “Higher-k Titanium Dioxde Incorporating LaAlO3 as Dielectrics for MIM Capacitors,” Solid-State Electronics, vol. 54, pp. 646-649, 2010.
C. C. Huang, C. H. Cheng*, C. W. Lin, L. M. Chang, “High Capacitance Density and Thermal Leakage Improvement by using High-k Al2O3 doped SrTiO3 MIM Capacitors,” J. Electrochem. Soc., vol. 157, p.H624, 2010.
C. H. Cheng, H. H. Hsu, I. J. Hsieh, C. K. Deng, Albert Chin and F. S. Yeh “High-k TiCeO MIM Capacitors with a Dual-plasma Interface Treatment,”Electrochemical and Solid-State Letters, 13 (4), H112-H115, 2010.
C. H. Cheng, H. H. Hsu, Albert Chin and F. S. Yeh “Characteristics of Cerium Oxide for Metal-Insulator-Metal Capacitors,” Electrochemical and Solid-State Letters, 13 (1), H16-H19, 2010.
B. C. He, C. H. Cheng, H. C. Wen, Y. S. Lai, P. F. Yang, M. H. Lin, W. C. Chou, W. F. Wu and C. P. Chou “Evaluation of the Nanoindentation behaviors of SiGe epitaxial on Si substrate,” Microelectronics Reliability, vol. 50, pp. 63-69, 2009.
C.C. Huang, C. H. Cheng*, K. C. Chiang, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, and Albert Chin “Impact of Ta2O5 doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitors,” Jpn. J. Appl. Phys, vol. 48, pp. 081401-6, 2009.
C. C. Huang, C. H. Cheng, K. T. Lee, L. M. Chang, Albert Chin and Jeng Gung, “Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization Annealing treatment on the Al2O3/TiO2/Al2O3 Film,” Electrochemical and Solid-State Letters, 12 (4), H123-H126, 2009.
C. C. Huang, C. H. Cheng, Albert Chin and C. P. Chou “High performance Ir/TiPrO/TaN MIM capacitors for analog ICs application,” J. Electrochem. Soc., vol. 156, p. G23-G27, 2009.
S. H. Lin, C. H. Cheng, W. B. Chen, F. S. Yeh, C. P. Chou, S. P. McAlister, and Albert Chin, “Low Threshold Voltage TaN/LaTiO n-MOSFETs with Small EOT,” IEEE Electron Device Lett., vol. 30, no. 9, pp. 999-1001, 2009.
S. H. Lin, C. H. Cheng, W. B. Chen, F. S. Yeh, C. P. Chou, S. P. McAlister, and Albert Chin, “Low threshold voltage TaN/Ir/LaTiO p-MOSFETs incorporating low-temperature-formed shallow junctions,” IEEE Electron Device Lett., vol. 30, no. 6, pp. 681-683, 2009.
C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hsiao, C. P. Chou, S. P. McAlister, and Albert Chin, “MIM Capacitors Using a High-k TiZrO Dielectric for Analog and RF Applications,” J. Electrochem. Soc., vol. 155, p. G295, 2008.
C. H. Cheng, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, J. Hu, M. Huang, T. Arikado, S. P. McAlister and Albert Chin, "High Density and Low Leakage Current in TiO2 Capacitors Processed at 300oC,” IEEE Electron Device Lett., vol. 29, no. 8, pp. 845-847, 2008.
C. H. Cheng, H. C. Pan, C. C. Huang, C. P. Chou, C. N. Hsiao, J. Hu, M. Huang, T. Arikado, S. P. McAlister and Albert Chin, "Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode,” IEEE Electron Device Lett., vol. 29, no. 10, pp. 1105-1107, 2008.
Chih-Kang Deng, Chun-Hu Cheng, and Bi-Shiou Chiou “Low-Voltage Organic Thin-Film Transistor With High-κ LaYOx Gate Insulator,” ECS Transactions, Vol. 16, (9), p. 231 (2008)
C. H. Cheng, H. H. Hsu, C. K. Deng, Albert Chin and C. P. Chou “Improved Lower Electrode Oxidation of High-k TiCeO Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment,” ECS Transactions, Vol. 16, (5), p. 323 (2008)
C. C. Huang, C. H. Cheng, Albert Chin and C. P. Chou “High performance Ir/TiPrO/TaN MIM capacitors for analog ICs application,” ECS Transactions, Vol. 16, (5), p. 341 (2008)
K. C. Chiang, C. C. Huang, H. C. Pan and C. N. Hsiao, J. W. Lin, I. J. Hsieh, C. H. Cheng, C. P. Chou, Albert Chin, H. L. Hwang and S. P. McAlister “Thermal Leakage Improvement by Using a High Work-Function Ni Electrode in High-k TiHfO MIM Capacitors,” J. Electrochem. Soc., vol. 154, p. G54, 2007.
C. C. Haung, C. H. Cheng, Albert Chin and C. P. Chou, “Leakage Current Improvement of Ni/TiNiO/TaN Metal-Insulator-Metal Capacitors using Optimized N+ Plasma Treatment and Oxygen Annealing,” Electrochemical and Solid-State Letters, 10 (10), H287-H290, 2007.
C. H. Cheng, K. C. Chiang, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, and Albert Chin, “Improved Stress Reliability of Analog TiHfO Metal-Insulator-Metal Capacitors by Using a High Work-Function Electrode,” Jpn. J. Appl. Phys, vol. 46, no. 11, pp. 7300-7302, 2007.
C. H. Cheng, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister and Albert Chin, “Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode,” IEEE Electron Device Lett., vol. 28, no. 12, pp. 1095-1097, 2007.
K. C. Chiang, C. H. Cheng, H. C. Pan and C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang, “Use of a High Work-Function Ni Electrode to Improved the Stress Reliability of Analog SrTiO3 Metal-Insulator-Metal Capacitors,” IEEE Electron Device Lett., vol. 28, no. 8, pp. 694-696, 2007.
K. C. Chiang, C. H. Cheng, H. C. Pan and C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang, "High Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning,” IEEE Electron Device Lett., vol. 28, no. 3, pp. 235-237, 2007
Page updated
Google Sites
Report abuse