High Power GaN-based Devices for RF Applications (高功率氮化鎵元件)

Recently, the high-electron mobility transistors (HEMTs) using wide band-gap materials have been developed for the microwave application. The AlGaN/GaN HEMT device exhibits large power output and high drive current due to large breakdown voltage and high carrier saturation velocity. However, the device performance of AlGaN/GaN HEMT suffers from the technical challenge with continued scaling of gate length due to large access resistance, polarization-induced electric fields and current collapse. Besides, the RF performance is also  limited by gate leakage, output transconductance, power linearity and self-heating effect for THz application.