Steep Tunn-On Transistors for Ultralow-Power Application (低功耗快速導通電晶體)

Power consumption is the most important criterion for integrated circuit (IC) using multi-Gb electronic devices. To reach the low power target, both DC leakage power and AC switching power (CSV2Df/2) need to be decreased. Therefore, the MOSFET must be operated at a small VD to lower the AC switching power.Nevertheless, the ultimate VD reduction is limited by the fundamental transistor physics of slow turn-on sub-threshold slope of 60 mV/decade at room temperature. The DC leakage power in a MOSFET originates from the off-state leakage current, which becomes worse as the device downscales to sub-10 nm via quantum-mechanical tunneling.