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Post date: Jan 25, 2014 6:40:51 AM
In the paper titled, ``MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission", we demonstrated that the GaAs-on-GaSb heterostructure is a viable terahertz emitter. The work was delivered as oral presentation at the National Institute of Physics (NIP), UP Diliman, Quezon City on October 24-26, 2011.
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