Research
Below, you’ll find my writing organized by publication type and year. For questions on any specific publication, feel free to message me.
At the present, Carl Friedrich Gauss' motto, pauca sed matura, applies. ``Few, but ripe."
Papers (ISI-Journal)
C. P. Sadia, L. P. Lopez, Jr., R. M. delos Santos, J. E. Muldera, A. E. De Los Reyes, M. A. C. Tumanguil, C. T. Que, V. K. Mag-usara, M. Tani, A. S. Somintac, E. S. Estacio, and A. A. Salvador, "Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation", Thin Solid Films 648, pp. 46-49 (2018). DOI: doi.org/10.1016/j.tsf.2017.12.022
C. P. Sadia, J. Muldera, E. S. Estacio, A. S. Somintac, A. A. Salvador, C. T. Que, K. Yamamoto, and M. Tani, "Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters", Applied Physics Express 8, 035501 (2015). DOI: 10.7567/APEX.8.035501
C. P. Sadia, A.M. Laganapan, M.A. Tumanguil, E. Estacio, A. Somintac, A. A. Salvador, C.T. Que, K. Yamamoto, and M. Tani, "Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)", Journal of Applied Physics 112, 123514 (2012). DOI: doi.org/10.1063/1.4770267
Paper (Local Journal)
J. E. Muldera, M.H. Balgos, L. Lopez Jr., E.A. Prieto, M.A. Tumangil, K.C. Gonzales, R. Simon, G. Catindig, C. P. Sadia, A. S. Somintac, A. A. Salvador and E. S. Estacio, "Investigation of the Terahertz Radiation Mechanism in Gallium Arsenide on Si Substrate", National Research Council of the Philippines (NRCP) ISSN: 0117-3294 Vol. XV No.1, 2016.
Conference Proceeding (International)
C. T. Que, E. Estacio, C. P. Sadia, A. Somintac, K. Yamamoto, A. A. Salvador, and M. Tani, "Intense Terahertz Emission from GaAs and InAs Thin Films Grown on GaSb Substrates", 2011 Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), Sydney, Australia. Article Link
National Refereed Proceedings
C. P. Sadia, L. P. Lopez, Jr., R. M. delos Santos, J. E. Muldera, A. E. De Los Reyes, M. A. C. Tumanguil, C. T. Que, V. K. Mag-usara, M. Tani, A. S. Somintac, E. S. Estacio, and A. A. Salvador, ``Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-$\mu$m femtosecond laser excitation" in Proc. of 35th Samahang Pisika ng Pilipinas (2017).
J. E. Muldera, M.H. M. Balgos, L. Lopez Jr., E.A. Prieto, K.C. Gonzales, C. P. Sadia, A. S. Somintac, A. A. Salvador, and E. S. Estacio, ``Investigation of terahertz mechanism in GaAs-on-Si(100)" in Proc. of 33rd Samahang Pisika ng Pilipinas (2015).
G.A. Catindig, R. Simon, K.C. Gonzales, C. P. Sadia, E.A. Prieto, J.D. Vasquez, S.A. Vizcarra, C. Alcantara, H.A. Husay, E. Estacio, A. Somintac, and A. Salvador, ``Comparative studies of pre-growth heat treatment of MBE grown GaAs on Silicon substrates" in Proc. of 33rd Samahang Pisika ng Pilipinas (2015).
A. De Los Reyes, S.A. Vizcara, J.D. Vasquez, M.A. Faustino, L. Lopez, Jr., C. Sadia, M.H. Balgos, R. Jaculbia, J. Muldera, C. Que, G.N. Santos, A. Somintac, A. Salvador, and E. Estacio, ``Development of a cost-effective and portable TeraHertz Time-Domain Spectroscopy setup in transmission geometry," in Proc. of 32nd Samahang Pisika ng Pilipinas (2014).
R. C. Simon, J.R. Abat, C. P. Sadia, M.I. P. Carillo, M. H. Balgos, J. Muldera, E. Estacio, and A. Somintac, ``Textured semi-insulating Gallium Arsenide (100) exhibiting enhanced terahertz emission," in Proc. of 31st Samahang Pisika ng Pilipinas (2013).
C. P. Sadia, M.A. C. Tumanguil, A.M. K. Laganapan, A. S. Somintac, E. Estacio, C. T. Que, K. Yamamoto, M. Tani, and A. A. Salvador, ``MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission," in Proc. of 29th Samahang Pisika ng Pilipinas (2011).
C. P. Sadia, E.A. P. Prieto, J. G. Porquez, K. M. Omambac, A. S. Somintac, and A. A. Salvador,``Nanowire Formation on (001)-oriented Gallium Antimonide Substrates," in Proc. of 27th Samahang Pisika ng Pilipinas (2009).
E.A. P. Prieto, C. P. Sadia, R. B. Jaculbia, M.A. C. Tumanguil, C. F. Baldo III, A. S. Somintac and A. A. Salvador, ``Optical and Electrical Characterization of a High Electron Mobility Transistor (HEMT) Structure grown on Gallium Antimonide (GaSb) Substrate" in Proc. of 27th Samahang Pisika ng Pilipinas (2009).
C. P. Sadia, J. Palay, E.A. P. Prieto, and A. A. Salvador, ``Improved AlGaAs/GaAs heterostructures grown on (001) GaSb by molecular beam epitaxy," in Proc. of 26th Samahang Pisika ng Pilipinas (2008).