OEM: Heidelberg Instruments
Model: Direct Write Lithography 66+
Predecessor: DWL66FS
Category
Photolithography
Basic Function
Maskless photoresist exposures, both full exposure and grayscale
Measurement and inspection functions up to 100x
Highlights
Onboard conversion of lithography designs to exposure jobs
Fast path to substrate exposure, good for many R&D applications
Wide range of substrate sizes accepted
Minimum feature size to 300nm
Two Writeheads (WH) Available
2mm
10mm
Resolution
300nm minimum feature size, 2mm WH, UV 375nm laser
1μm minimum feature size, 10mm WH, UV 375nm laser
≥ 0.5μm lines and spaces, 2mm WH, UV 375nm laser
≥ 1.5μm lines and spaces, 10mm WH, UV 375nm laser
Global 2nd Layer alignment over 100 mm × 100 mm
≤ 500nm
Local 2nd Layer alignment over 5 mm × 5 mm
≤ 250nm
Depth of Focus
± 0.25µm for 2mm WH
± 2.5µm for 10mm WH
Two Autofocus Modes
Optical
Pneumatic
Beam Diameter
0.6µm for 2mm WH
1.2µm for 10mmWH
Partial Coherence
Variable, 0.37 to 0.86
Numerical Aperture (NA)
0.9 for 2mm WH
0.45 for 10mm WH
Uniformity
±0.25µm across 150mm substrate
Particulate Class
ISO6
Wafer Sizes
from 5mm x 5mm to 228.6mm x 228.6mm in size (writing area limited to 200mm x 200mm)
and from 0.1mm to 12mm thick
Best for
R&D, rapid design iteration, low volume production
Mask creation
Grayscale rastering projects
Limitations
Layer to layer alignment can be poor, especially for larger substrates
Limited wafer level uniformity
Material Restrictions
All substrates must conform to contamination policy found in the MSL Outside Use Policy
The tool will be outfitted with "dirty" tooling such that outside substrates can be run on the tool
However, other processing (coating, develop, etc) will be restricted due to contamination concerns
Photoresist must be compatible with the UV range (375nm)
Closest Alternatives
Aligner