aligner

Resolution

1.25µm lines and spaces, UV-4 (340-440nm)

Machine to Machine overlay

±0.30µm, 150mm systems, 98% of data

Machine to Itself overlay

±0.25µm, 98% of data

Depth of Focus

± 6µm for 1.5µm lines and spaces

Focus Stability

± 2.0µm over 6 days 

Focus Range

±450µm w/ extended bellows chuck

Partial Coherence

Variable, 0.37 to 0.86

Numerical Aperture (NA)

.167

Uniformity of Illumination

±3.0%

Particulate Generation

≤ 7 particles per wafer pass (1.0µm or larger)

Prealignment and First-Level Placement Accuracy

±15µm

Wafer Sizes

150mm, from 250 to 675µm thickness

Best for

Medium to Large Volume Lithography

Lithography with strict overlay alignment requirements

Limitations

Must be operated by MSL staff

Requires a compatible photo mask

Only one substrate size available

Scheduling subject to developer life considerations

Material Restrictions

Backside wafer handling within the tool MUST be kept clean. 

Therefore, all substrates must conform to contamination policy found in the MSL Outside Use Policy

Photoresist must be compatible with the UV-4 range (340-440nm)

Closest Alternatives

DWL66+