Publications

From April 2023 to Currently

Journal Papers and Letters
[1] A. Kobayashi, S. Kihara, T. Akiyama, T. Kawamura, T. Maeda, K. Ueno, H. Fujioka,
    "Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN",
    ACS Applied Electronic Materials 5, 240-246 (2023).

Conference Presentations
[1] T. Maeda, K. Ema, K. Sasaki,
    "Photocurrent induced by Franz-Keldysh effect in β-Ga2O3N Schottky barrier diode under high reverse bias voltage"
    65th Electronic Materials Conference (EMC), Santa Barbara (USA), June 2023, Oral.

[2] C. Savant, V. Gund, K. Nomoto, T. Maeda, S. Jadhav, T.-S. Nguyen, Y.-H. Chen, J. Casamento, A. Lal, H. G. Xing, D. Jena,
    "Ferroelectricity in High-K BAlN Films Grown by Molecular Beam Epitaxy",
    IEEE International Symposium on Applications of Ferroelectric (ISAF), Cleveland (USA), July 2023, Oral.

[3] A. Munakata, K. Sasaki, K. Ema, Y. Nakano, T. Maeda,
    "Temperature dependence of barrier height of Ni/β-Ga2O3N Schottky barrier diodes consistently obtained by I-V and C-V measurements",
    The Lester Eastman Conference 2023 (LEC 2023), Chicago, August 2023, Oral.

[4] J. Casamento, K. Nomoto, T. S. Nguyen, H. Lee, C. Savan, L. Li, A. Hickman, T. Maeda, Y. T. Shao, J.Encomendero, V. Gund, H. G. Xing, D. Jena,
    "AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality",
    IEEE BiCMOS and Compound Semiconductor Integrated Circuits and TEchnology Symposium (BCICTS 2023), Monterey (USA), October 2023, Oral [invited].

[5] T. Maeda, Y. Wakamoto, S. Kaneki, H. Fujikura, A. Kobayashi,
    "Characterization of Optical Properties and Bandgaps of ScxAl1−xN Epitaxially Grown on GaN Bulk Substrate by Sputtering Method",
    14th International Conference on Nitride Semiconductors (ICNS 14), Fukuoka (Japan), November 2023, Oral.

[6] C. P. Savan, V. Gund, K. Nomoto, T. Maeda, S. Jadhav, T.-S. Nguyen, Y.-H. Chen, L. Van Deurzen, A. Lal, H. G. Xing, D. Jena,
    "[Late News] First Demonstration of Ferroelectricity and High-K Dielectric Constant in Ultrawide Bandgap AlBN MBE Films",
    14th International Conference on Nitride Semiconductors (ICNS 14), Fukuoka (Japan), November 2023, Oral [invited].

[7] A. Kobayashi, S. Kihira, T. Takeda, M. Kobayashi, T. Maeda, T. Harada, T. Akiyama, T. Kawamura, K. Ueno, H. Fujioka,
    "Sputtering Epitaxial Integration of AlN and NbN for Polarity Control and CrystalPhase Manipulation",
    14th International Conference on Nitride Semiconductors (ICNS 14), Fukuoka (Japan), November 2023, Oral.

[8] A. Kobayashi, Y. Honda, T. Maeda, K. Ueno, H. Fujioka,
    "Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches",
    14th International Conference on Nitride Semiconductors (ICNS 14), Fukuoka (Japan), November 2023, Oral.

[9] Y. Wakamoto, A. Kobayashi, Y. Nakano, T. Maeda,
    "Study on 2DEG Density in ScAlN/GaN and AlGaN/GaN Heterostructures Based on Simulation and Analytical Modeling",
    14th International Conference on Nitride Semiconductors (ICNS 14), Fukuoka (Japan), November 2023, Poster.

From April 2022 to March 2023 (Link)

Google Scholar (Link)
Takuya Maeda (22 papers, citations > 450, h-index: 14)