Citations of Our Papers
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2026
[xx] ~, and Sung-Hwan Choi*, (In preparation)
[xx] ~, Sung-Hwan Choi*, (In preparation)
[xx] ~, and Sung-Hwan Choi*, (In preparation)
[xx] Sung-Hwan Choi*, Seong Jin Jang, and Woo Suk Jung, (Under Review)
[xx] In-Soo Ahn, Byeong-Kwon Ju, and Sung-Hwan Choi*, "Process-Driven Enhancement of Contact and Reliability Characteristics in Self-Aligned Top-Gate GIZO TFTs via Over-Etching and Ultra-Thin SiO2 Interlayers" (Under Review)
2025
[22] Dong Yeol Shin, Jeesoo Lee, Yewon Han, Sung-Hwan Choi, Kyung-Tae Kang*, "Real-Time Prediction of Dielectric Properties in a HZO-Based Thin-Film Capacitor using Deep Learning", Applied Surface Science Advances, Vol. 29, pp. 100848, September, 2025. (SCIE, Impact Factor: 9.7 (2023-2024), JCR 2.2%) DOI: 10.1016/j.apsadv.2025.100848 [Link]
[21] Jeesoo Lee, Byeong-Kwon Ju, and Sung-Hwan Choi*, "Enhanced Ferroelectricity and Endurance Using Nanolaminate-Gradient-Structured HfxZr1-xO2 Films", IEEE Transactions on Electron Devices, Vol. 72, No. 3, pp. 1075-1082, March, 2025. (SCIE, Impact Factor: 3.2 (2024), JCR 37.3%) DOI: 10.1109/TED.2024.3523869 [Link]
[20] Chaeyeon Kim, Byeong-Kwon Ju, and Sung-Hwan Choi*, "Achieving Nearly 70 cm2/V·s Field-Effect Mobility in Single Amorphous Ga-In-ZnO Thin-Film Transistors Deposited by Sputtering Process via Intermediate Patterned Metal Layer Insertion", Applied Surface Science, Vol. 682, No. 15, pp. 161753, February, 2025. (SCIE, Impact Factor: 6.9 (2024), JCR 10.9%) DOI: 10.1016/j.apsusc.2024.161753 [Link]
2024
[19] Benjamin Nketia-Yawson*, Vivian Nketia-Yawson, Sung-Hwan Choi*, Jea Woong Jo*, "Suppressing Interfacial Contact Energetics with Ultrathin Organic Passivation in Hysteresis-Free Lead-Halide Perovskite Transistors", ACS Applied Polymer Materials, Vol. 6, Issue 10, pp. 5747-5753, May, 2024. (SCIE, Impact Factor: 4.6 (2024), JCR 23.9%) DOI: 10.1021/acsapm.4c00430 [Link]
[18] In-Soo Ahn, Byeong-Kwon Ju, and Sung-Hwan Choi*, "Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors with Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different Temperatures", IEEE Transactions on Electron Devices, Vol. 71, No. 3, pp. 1920-1925, March, 2024. (SCIE, Impact Factor: 3.2 (2024), JCR 37.3%) DOI: 10.1109/TED.2024.3353700 [Link]
2023
[17] Sang Youn Lee, Chun Sakong, Sung-Hwan Choi, Byeong-Kwon Ju*, Kwan Hyun Cho*, "Controlling the Surface Modification by CF4 Plasma Treatment for Inkjet Printed Color Conversion Layer With InP-Based QDs Ink", Advanced Materials Interfaces, Vol. 10, Issue 5, pp. 2201851-1 - 2201851-8, February 14, 2023. (SCIE, Impact Factor: 4.4 (2024), JCR 35.48%) DOI: 10.1002/admi.202201851 [Link]
[16] Kang-Min Lee, Byeong-Kwon Ju, and Sung-Hwan Choi*, "a-InGaZnO Thin-Film Transistors with Novel Atomic Layer-Deposited HfO2 Gate Insulator using Two Types of Reactant Gases", IEEE Transactions on Electron Devices, Vol. 70, No. 1, pp. 127 - 134, January, 2023. (SCIE, Impact Factor: 3.2 (2024), JCR 37.3%) DOI: 10.1109/TED.2022.3223322 [Link]
2021
[15] Sung-Hwan Choi*, "High-performance Oxide TFTs with Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts", IEEE Electron Device Letters, Vol. 42, No.2, pp. 168 - 171, Feburuary, 2021. (SCIE, Impact Factor: 4.5 (2024), JCR 26.6%) DOI: 10.1109/LED.2020.3047389 [Link]
2013
[14] Sung-Hwan Choi and Min-Koo Han, "Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width", IEEE Electron Device Letters, Vol. 34, No.6, pp. 771 - 773, June, 2013. (SCIE, Impact Factor: 4.5 (2024), JCR 26.6%) DOI: 10.1109/LED.2013.2256457 [Link]
2012
[13] Sung-Hwan Choi and Min-Koo Han, "Effect of Deposition Temperature of SiOx Passivation Layer on the Electrical Performance of a-IGZO TFTs", IEEE Electron Device Letters, Vol. 33, No.3, pp. 396-398, March, 2012. (SCIE, Impact Factor: 4.5 (2024), JCR 26.6%) DOI: 10.1109/LED.2011.2181320 [Link]
[12] Sung-Hwan Choi, Jun-Hyuk Jang, Jang-Joo Kim, and Min-Koo Han, "Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs", IEEE Electron Device Letters, Vol. 33, No.3, pp. 381-383, March, 2012. (SCIE, Impact Factor: 4.5 (2024), JCR 26.6%) DOI: 10.1109/LED.2011.2178112 [Link]
[11] Sung-Hwan Choi, Yeon-Gon Mo, Hye-Dong Kim, and Min-Koo Han, "Hot-Carrier Effects in Short Channel (L = 1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistors", Japanese Journal of Applied Physics, Vol. 51, No. 2, pp. 024103-1-024103-5, Feburuary, 2012.(SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.1143/JJAP.51.024103 [Link]
[10] Sung-Hwan Choi, Yeon-Gon Mo, Hye-Dong Kim, Min-Koo Han, "Effect of Dynamic Bias Stress (AC) In Short-Channel(L=1.5 µm) p-Type polycrystalline Silicon (poly-Si) Thin Film Transistors (TFTs)", Japanese Journal of Applied Physics, Vol. 51, No. 2, pp. 021401-1-021401-6, Feburuary, 2012. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.1143/JJAP.51.021401 [Link]
[9] Sung-Hwan Choi and Min-Koo Han, "Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress", Applied Physics Letters, Vol. 100, No.4, pp. 043503-1-043503-3, January, 2012. (SCIE, Impact Factor: 3.6 (2024), JCR 32.89%) DOI: 10.1063/1.3679109 [Link]
2011
[8] Sung-Hwan Choi, and Min-Koo Han, "Bias Temperature and Light-Induced Instability In Short-Channel(L=1.5 µm) p-Type Polycrystalline Silicon Thin Film Transistors on Glass Substrates", Japanese Journal of Applied Physics, Vol. 50, No. 7, pp. 071401-1 - 071401-7, July, 2011. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.1143/JJAP.50.071401 [Link]
[7] Sung-Hwan Choi, and Min-Koo Han, "Novel Multiple-Channel Polycrystalline Silicon Thin-Film Transistors Employing Asymmetric Spacing", Japanese Journal of Applied Physics, Vol. 50, No.3, pp.03CB02-1 - 03CB02-5, March, 2011. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.7567/JJAP.50.03CB02 [Link]
[6] Sung-Hwan Choi, and Min-Koo Han, "New Bidirectional T-Shaped Triple-Gate n-Type Polycrystalline Silicon Thin-Film Transistors Formed by Low-Temperature Sequential Lateral Solidification Process to Reduce of Kink Effects", Japanese Journal of Applied Physics, Vol. 50, No.3, pp.034201-1 - 034201-8, March, 2011. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.7567/JJAP.50.034201 [Link]
2010
[5] Sung-Hwan Choi, Sun-Jae Kim, Yeon-Gon Mo, Hye-Dong Kim, and Min-Koo Han, "Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress", Japanese Journal of Applied Physics, Vol. 49, No.3, Issue 2, pp. 03CA04-1~03CA04-6, March 2010. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.1143/JJAP.49.03CA04 [Link]
2009
[4] Byung Du Ahn, Woong Hee Jeong, Hyun Soo Shin, Dong Lim Kim, Hyun Jae Kim, Jae Kyeong Jeong, Sung-Hwan Choi, and Min-Koo Han, "Effect of Excimer Laser Annealing on the Performance of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors", Electrochemical and Solid-State Letters, Vol.12, No.12, pp. H430 ~ H432, September 2009. (SCIE, Impact Factor: 2.321 (2014)) DOI: 10.1149/1.3231132 [Link]
[3] Sung-Hwan Choi, Hee-Sun Shin, and Min-Koo Han,"Novel F-Shaped Triple-Gate Structure for Suppression of Kink Effect and Improvement of Hot Carrier Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistor", Japanese Journal of Applied Physics, Vol. 48, No. 4, pp. 04C155-1 ~ 04C155-6, April 2009. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.1143/JJAP.48.04C155 [Link]
[2] Sung-Hwan Choi, Hee-Sun Shin, Yeon-Gon Mo, Hye-Dong Kim, and Min-Koo Han, "Positive Shift of Threshold Voltage in Short-Channel (L = 1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistor under Off-State Bias Stress", Japanese Journal of Applied Physics, Vol. 48, No. 3, pp. 03B011-1 ~ 03B011-4, March 2009. (SCIE, Impact Factor: 1.8 (2024), JCR 73.5%) DOI: 10.1143/JJAP.48.03B011 [Link]
2008
[1] Sang-Myeon Han, Sun-Jae Kim, Joong-Hyun Park, Sung-Hwan Choi, Min-Koo Han, "High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350℃", Journal of Non-Crystalline Solids, Vol. 354, pp. 2268-2271, February 2008. (SCIE, Impact Factor: 3.5 (2024), JCR 16.5%) DOI: 10.1016/j.jnoncrysol.2007.09.082 [Link]
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