About TEAM
[MEMORY GROUP]
3D NAND flash memory
Device reliability characterization: short/long-term retention, endurance, temperature instability, energetic and spatial distribution of trap behavior to be used storage, mechanical stress to process sequence
Array operational analysis: disturbance, statistical data extraction (big data; machine learning-applicable), program/erase/read algorithm for better reliability and performance
Structural analysis: geometric variation due to process variation
DRAM
Cryogenic behavior for quantum computing
Optimized scheme for temperature variation
