Ferroelectric HfZrO2 for Silicon MOSFETS

HfZrO2 is a novel ferroelectric material, which is gaining increasing attention due to its unique CMOS compatibility and scalability. In this work, we systematically investigated the impact of crystallization annealing temperature on the HfZrO2 MOSFET's characteristics. We found that the MOSFET performance can be improved by keeping the annealing temperature lower than conventional processes [1].

シリコンMOSFET向けHfZrO2強誘電体

HfZrO2はCMOS親和性や薄膜化可能性の観点から近年急速に注目を集めている新規強誘電体材料です。この研究では作製工程における結晶化アニールがHfZrO2を用いたMOSFETの特性に与える影響を調査しました。我々は従来よりもアニール温度を低く抑えることでデバイス特性が改善することを見出しました[1]。

[1] K. Toprasertpong, K. Tahara, T. Fukui , Z. Lin, K. Watanabe, M. Takenaka, and S. Takagi, “Improved MFIS interface properties in HfO2 based ferroelectric FETs by low temperature annealing,” IEEE Electron Devic e Letters, vol. 41, no. 10, pp. 1588 1591, 2020.