Journal

[641] Dongseok Kwon, Sung Yun Woo, Joon Hwang, Hyeongsu Kim, Jong-Ho Bae, Wonjun Shin, Byung-Gook Park, Jong-Ho Lee, "Efficient Hybrid Training Method for Neuromorphic Hardware Using Analog Nonvolatile Memory," IEEE Transactions on Neural Networks and Learning Systems, Nov. 2023. [SCI] DOI : 10.1109/TNNLS.2023.3327906

[640] Jaehyeon Kim, Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Woo Young Choi, Jae-Joon Kim, Byung-Gook Park, Jong-Ho Lee, "A novel pathway to construct gas concentration prediction model in real-world applications: Data augmentation; fast prediction; and interpolation and extrapolation," Sensors and Actuators B: Chemical, Vol. 382, 133533, May. 2023 [SCI] DOI : 10.1016/j.snb.2023.133533

[639] Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim, and Woo Young Choi, "Fuse Devices for Pruning in Memristive Neural Network," IEEE Electron Device Letters, Vol. 44, no. 3, pp. 520-523, Mar. 2023 [SCI] DOI : 10.1109/LED.2023.3237651

[638] Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Byung-Gook Park, and Woo Young Choi, "Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBBRAM Observed by TEM," ACS Applied Electronic Materials, 5(3), pp. 1834-1843, Mar. 2023 [SCI] DOI : 10.1021/acsaelm.3c00034

[637] Ho-Nam Yoo, Min-Kyu Park, Byung-Gook Park, Jong-Ho Lee, "Effect of layer-specific synaptic retention characteristics on the accuracy of deep neural networks," Solid-State Electronics, Vol. 200, 108570, Feb. 2023 [SCI] DOI : 10.1016/j.sse.2022.108570

[636] Sung Yun Woo, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee, Jong-Ho Bae, "Demonstration of Pulse Width Modulation Function Using Single Positive Feedback Device for Neuron," IEEE Electron Device Letters, Nov. 2022 [SCI] DOI : 10.1109/LED.2022.3225168

[635] Youngsan Cha, Kyungchul Park, Jong-Ho Lee, and Byung-Gook Park, "An integrate-and-fire neuron with capacitive trans-impedance amplifier for improving linearity in Spiking Neural Networks," Solid-State Electronics, Vol. 197, 108435, Nov. 2022 [SCI] DOI : 10.1016/j.sse.2022.108435

[634] Seunghwan Song, Munhyeon Kim, Bosung Jeon, Donghyun Ryu, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Jae-Joon Kim, Wonbo Shim, Daewoong Kwon, and Byung-Gook Park, "Spiking Neural Network With Weight-Sharing Synaptic Array for Multi-Input Processing," IEEE Electron Device Letters, Vol. 43, no. 10, pp. 1657-1660, Oct. 2022 [SCI] DOI : 10.1109/LED.2022.3197239

[633] Bosung Jeon, Seunghwan Song, Sungmin Hwang, Taejin Jang, Kyunchul Park, Jonghyuk Park, Jong-Ho Lee, and Byung-Gook Park, "Impact of the leakage current of an AND-type synapse array on spiking neural networks," Solid-State Electronics, Vol. 196, 108407, Oct. 2022 [SCI] DOI : 10.1016/j.sse.2022.108407

[632] Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Investigation on Variability of Ferroelectric-Gate Field-Effect Transistor Memory by Random Spatial Distribution of Interface Trap," IEEE Transactions on Nanotechnology, Vol. 21, pp. 534-538, Sep. 2022 [SCI] DOI : 10.1109/TNANO.2022.3207505

[631] Hyun-Seok Choi, Jihye Lee, Boram Kim, Jaehong Lee, Byung-Gook Park, Yoon Kim, sand Suck Won Hong, "Highly-paced self-assembled graphene oxide film-integrated resistive random-access memory on a silicon substrate for neuromorphic application, " Nanotechnology, Vol. 33, no. 43, 435201, Aug. 2022 [SCI] DOI : 10.1088/1361-6528

[630] Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, and Hyungjin Kim, "Effect of Program Error in Memristive Neural Network With Weight Quantization," IEEE Transactions on Electron Devices, Vol. 68, no. 6, pp. 3151-3157, Jun. 2022 [SCI] DOI : 10.1109/TED.2022.3169112

[629] Wonjun Shin, Jong-Ho Bae, Dongseok Kwon, Ryun-Han Koo, Byung-Gook Park, Daewoong Kwon, and Jong-Ho Lee, "Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives," IEEE Electron Device Letters, Vol. 43, no. 6, pp. 958-961, Jun. 2022 [SCI] DOI : 10.1109/LED.2022.3168797

[628] Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, and Hyungjin Kim, "4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array," Advanced Intelligent Systems, Vol. 4, no. 9, 2100273, May. 2022 [SCI] DOI : 10.1002/aisy.202100273

[627] Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Byung-Gook Park, and Jong-Ho Lee, "Effects of Postdeposition Annealing Ambience on NO2 Gas Sensing Performance in Si-Based FET-Type Gas Sensor," IEEE Transactions on Electron Devices, Vol. 69, no. 5, pp. 2604-2610, May. 2022 [SCI] DOI : 10.1109/TED.2022.3161246

[626] Wonjun Shin, Yujeong Jeong, Seongbin Hong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park, and Jong-Ho Lee, "Fully Integrated FET-type Gas Sensor with optimized Signal-to-Noise Ratio for H2S gas detection," Sensors and Actuators B: Chemical, pp. 132052,  May. 2022 [SCI] DOI : science/article

[625] Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Dongseok Kwon, Joon Hwang, Byung-Gook Park, Jong-Ho Lee, "Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor," IEEE Electron Device Letters, May. 2022 [SCI] DOI : 10.1109/LED.2022.3176238

[624] Kyung Kyu Min, Hyun-Min Kim, Yeonwoo Kim, Changha Kim, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Damage-Induced Ferroelectricity in HfOx-Based Thin Film," IEEE Electron Device Letters, Vol. 43, no. 5, pp. 713-716, May. 2022 [SCI] DOI : 10.1109/LED.2022.3162888

[623] Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Novel Dual Liner Process for Side-Shielded Forksheet Device With Superior Design Margin," IEEE Transactions on Electron Devices, Vol. 69, no. 5, pp. 2232-2235, May. 2022 [SCI] DOI : 10.1109/TED.2022.3156957

[622] Sungmin Hwang, Junsu Yu, Geun Ho Lee, Min Suk Song, Jeesoo Chang, Kyung Kyu Min, Taejin Jang, Jong-Ho Lee, Byung-Gook Park, and Hyungjin Kim, "Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks," IEEE Electron Device Letters, Vol. 43, no. 4, pp. 549-552, Apr. 2022 [SCI] DOI : 10.1109/LED.2022.3149029

[621] Wonjun Shin, Gyuweon Jung, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Byung-Gook Park, and Jong-Ho Lee, "Optimization of channel structure and bias condition for signal-to-noise ratio improvement in Si-based FET-type gas sensor with horizontal floating-gate," Sensors and Actuators:B Chemical, Vol. 357, 131398, Apr. 2022 [SCI] DOI : 10.1106/j.snb.2022.131398

[620] Wonjun Shin, Jiyong Yim, Jong-Ho Bae, Jung-Kyu Lee, Seongbin Hong, Jaehyeon Kim, Yujeong Jeong, Dongseok Kwon, Ryun-Han Koo, Gyuweon Jung, Changhyeon Han, Jeonghan Kim, Byung-Gook Park, Daewoong Kwon, and Jong-Ho Lee, "Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization," Materials Horizons, Apr. 2022 [SCI] DOI : 10.1039/D2MH00340F

[619] Jangsaeng Kim, Soochang Lee, Chul-Heung Kim, Byung-Gook Park, and Jong-Ho Lee, "Analog synaptic devices applied to spiking neural networks for reinforcement learning applications," Semiconductor Science and Technology, Apr. 2022 [SCI] DOI : 10.1088/1361-6641

[618] Geun Ho Lee, Tae-Hyeon Kim, Min Suk Song, Jinwoo Park, Sungjoon Kim, Kyungho Hong, Yoon Kim, Byung-Gook Park, and Hyungjin Kim, "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos, Solitons & Fractals, Vol. 157, 111999, Apr. 2022 [SCI] DOI : 10.1016/j.chaos.2022.111999

[617] Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, and Byung-Gook Park, "A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System," IEEE Access, Vol. 10, pp. 37030-37038, Mar. 2022 [SCI] DOI : 10.1109/ACCESS.2022.3157333

[616] Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Byung-Gook Park, and Jong-Ho Lee, "Effects of Postdeposition Annealing Ambience on NO2 Gas Sensing Performance in Si-Based FET-Type Gas Sensor," IEEE Transactions on Electron Devices, Vol. 69, pp. 2604-2610, Mar, 2022 [SCI] DOI : abstract/document

[615] Jiseong Im, Jaehyeon Kim, Ho-Nam Yoo, Jong-Won Baek, Dongseok Kwon, Seongbin Oh, Jangsaeng Kim, Joon Hwang, Byung-Gook Park, and Jong-Ho Lee, "On-Chip Trainable Spiking Neural Networks Using Time-To-First-Spike Encoding," IEEE Access, Vol. 10, pp. 31263-31272, Mar. 2022 [SCI] DOI : 10.1109/ACCESS.2022.3160271

[614] Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory," IEEE Transactions on Electron Devices, Vol. 69, no. 3, pp. 1048-1053, Mar. 2022 [SCI] DOI : 10.1109/TED.2022.3144965

[613] Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory," IEEE Transactions on Electron Devices, Vol. 69, no. 3, pp. 1048-1053, Mar. 2022 [SCI] DOI : 10.1109/TED.2022.3144965

[612] Hyeongsu Kim, Sung Yun Woo, Soochang Lee, Young-Tak Seo, Byung-Gook Park, and Jong-Ho Lee, "Variation-Tolerant Capacitive Array for Binarized Neural Network," IEEE Electron Devices Letters, Vol. 43, no. 3, pp. 478-481, Mar. 2022 [SCI] DOI : 10.1109/LED.2022.3143140

[611] Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park ,and Jong-Ho Lee, "Effects of Channel Length Scaling on the Signal-to-Noise Ratio in FET-Type Gas Sensor With Horizontal Floating-Gate," IEEE  [SCI] DOI : 10.1109/LED.2022.3145374

[610] Yeonwoo Kim, Kyung Kyu Min, Junsu Yu, Daewoong Kwon, and Byung-Gook Park, "Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure," Semiconductor Science and Technology, Vol. 37, no. 4, 045001, Feb. 2022 [SCI] DOI : 10.1088/1361-6641

[609] Soochang Lee, Hyeongsu Kim, Sung-Tae Lee, Byung-Gook Park, and Jong-Ho Lee, "SiO2 Fin-Based Flash Synaptic Cells in AND Array Architecture for Binary Neural Networks," IEEE Electron Device Letters, Vol. 43, no. 1, pp. 142-145, Jan. 2022 [SCI] DOI : 10.1109/LED.2021.3125966

[608] Wonjun Shin, Jong-Ho Bae, Sihyun Kim, Kitae Lee, Dongseok Kwon, Byung-Gook Park, Daewoong Kwon, and Jong-Ho Lee, "Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET," IEEE Electron Device Letters, Vol. 43, no. 1, pp. 13-16, Jan. 2022 [SCI] DOI : 10.1109/LED.2021.3127175

[607] Kyung Kyu Min, Seok Jin Kwon, Yeonwoo Kim, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Impact of interlayer insulator formation methods of HfOx ferroelectricity in the metal-ferroelectric-insulator-semiconductor stack," Applied Physics Letters, Vol. 120, 012901, Jan. 2022 [SCI] DOI : 10.1063/5.007784

[606] Kyung Kyu Min, Junsu Yu, Yeonwoo Kim, Chae Soo Kim, Taejin Jang, Sungmin Hwang, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application," Applied Surface Science, Vol. 573, 151566, Jan. 2022 [SCI] DOI : 10.1016/j.apsusc.2021.151566

[605] Wonjun Shin, Kyung-Kyu Min, Jong-Ho Bae, Dongseok Kwon, Yeonwoo Kim, Junsu Yu, Joon Hwang, Byung-Gook Park, Daewoong Kwon, and Jong-Ho Lee, "Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy," Nanoscale, Vol. 14, 6, Jan. 2022 [SCI] DOI : 10.1039/D1NR06525D

[604] Wonjun Shin, Dongseok Kwon, Jong-Ho Bae, Suhwan Lim, Byung-Gook Park, and Jong-Ho Lee, "Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes", IEEE Electron Device Letters [SCI] DOI : 10.1109/LED.2021.3072915%22

[603] Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park, and Jong-Ho Lee, "Optimization of post-deposition annealing temperature for improved signal-to-noise ratio in In2O3 gas sensor", Semiconductor Science and Technology [SCI] DOI : 10.1088/1361-6641

[602] Gyuweon Jung, Wonjun Shin, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate", Sensors and Actuators B: Chemical [SCI] DOI : 10.1016/j.snb.2021.129661

[601] Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jiyong Yim, Dongseok Kwon, Yeonwoo Kim, Junsu Yu, Joon Hwang, Byung-Gook Park, Daewoong Kwon, and Jong-Ho Lee, "Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy," Nanoscale, Dec. 2021 [SCI] DOI : 10.1039/D1NR06525D

[600] Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Chayoung Lee, Byung-Gook Park, and Jong-Ho Lee "Effect of charge storage engineering on the NO 2 gas sensing properties of a WO 3 FET-type gas sensor with a horizontal floating-gate" Nanoscale, [SCI] DOI : 10.1039/D1NR00513H

[599] Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park, and Hyungjin Kim, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," Chaos, Solitons & Fractals, Vol. 153, Dec. 2021 [SCI] DOI : 10.1016/j.chaos.2021.111587

[598] Ji-Hoon Ahn, Hyun-Seok Choi, Jung Nam Kim, Byung-Gook Park, Sungjun Kim, Jaehong Lee, and Yoon Kim, "On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit," Solid-State Electronics, Vol. 186, Dec. 2021 [SCI] DOI : 10.1016/j.sse.2021.108177

[597] Kyoung Yeon Kim, and Byung-Gook Park, "Effect of Random Dopant Fluctuation on Data Retention Time Distribution in DRAM," IEEE Transactions on Electron Devices, Vol. 68, no. 11, pp. 5572-5577, Nov. 2021 [SCI] DOI : 10.1109/TED.2021.3108743

[596] Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory," IEEE Electron Device Letters, Vol. 42, no. 11, pp. 1607-1610, Nov. 2021 [SCI] DOI : 10.1109/LED.2021.3116797

[595] Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin Structure," IEEE Electron Device Letters, Vol. 42, no. 11, pp. 1580-1583, Nov. 2021 [SCI] DOI : 10.1109/LED.2021.3116461

[594] Min-Woo Kwon, Kyungchul Park, and Byung-Gook Park, "Low-Power Adaptive Integrate-and-Fire Neuron Circuit Using Positive Feedback FET Co-Integrated With CMOS," IEEE Access, Vol. 9, pp. 159925-159932, Nov. 2021 [SCI] DOI : 10.1109/ACCESS.2021.3131743

[593] Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoon Kwon, "Ferroelectric-Metal Field-Effect Transistor with Recessed Channel for 1T-DRAM Application," IEEE Journal of the Electron Devices Society, Nov. 2021 [SCI] DOI : 10.1109/JEDS.2021.3127955

[592] Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach," Physical Chemistry Chemical Physics, Vol. 23, Nov. 2021 [SCI] DOI : 10.1039/D1CP04637C

[591] Dongseok Kwon, Gyuweon Jung, Wonjun Shin, Yujeong Jeong, Seongbin Hong, Seongbin Oh, Jaehyeon Kim, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Efficient fusion of spiking neural networks and FET-type gas sensors for a fast and reliable artificial olfactory system," Sensors and Actuators B:Chemical, 130419, Oct. 2021 [SCI] DOI : 10.1016/j.snb.2021.130419

[590] Sung-Tae Lee, Gyuho Yeom, Joon Hwang, Hyeongsu Kim, Honam Yoo, Byung-Gook Park, and Jong-Ho Lee, "Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks," IEEE Journal of the Electron Devices Society, Vol. 9, pp. 1049-1054, Oct. 2021 [SCI] DOI : 10.1109/JEDS.2021.3123632

[589] Min-Hwi Kim, Sungmin Hwang, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Md. Hasan Raza Ansari, Seongjae Cho, and Byung-Gook Park, "A More Hardware-Oriented Spiking Neural Network Based on Leading Memory Technology and Its Application With Reinforcement Learning," IEEE Transactions on Electron Devices, Vol. 68, no. 9, Sep. 2021 [SCI] DOI : 10.1109/TED.2021.3099769

[588] Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain," IEEE Transactions on Electron Devices, Vol. 68, no. 9, Sep. 2021 [SCI] DOI : 10.1109/TED.2021.3097292

[587] Md. Hasan Raza Ansari, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park, "Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application," IEEE Journal of the Electron Devices Society, Vol. 9, pp. 1282-1289, Sep. 2021 [SCI] DOI : 10.1109/JEDS.2021.3111343

[586] Kyung Kyu Min, Junsu Yu, Yeonwoo Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "Interlayer engineering for enhanced ferroelectric tunnel junction oeprations in HfOx-based metal-ferroelectric-insulator-semiconductor stack," Nanotechnology, Vol. 32, no. 49, Sep. 2021 [SCI] DOI : 10.1088/1361-6528

[585] Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "A novel Physical Unclonable Function (PUF) Using 16x16 pure-HfOx ferroelectric tunnel junction array for security applications," Nanotechnology, Vol. 32, no. 48, Sep. 2021 [SCI] DOI : 10.1088/1361-6528

[584] Seunghwang Song, Bosung Jeon, Sungmin Hwang, Myung-Hyun Baek, Jong-Ho Lee, and Byung-Gook Park, "Integrate-and-Fire Neuron Circuit With Synaptic Off-Current Blocking Operation," IEEE Access, pp. 127841-127851, Aug. 2021 [SCI] DOI : 10.1109/ACCESS.2021.3108186

[583] Junsu Yu, Byung-Gook Park, and Dea Woong Kwon, "Effects of Pillar Condictions of DC/AC Characteristics of Tunnel Field-Effect Transistor with Vertical Structures," Journal of Semiconductor Techonology and Science, Vol. 21, no. 4, Aug. 2021 [SCI] DOI : 10.5573/JSTS.2021.21.4.241

[582] Hyungyo Kim, Joon Hwang, Dongseok Kwon, Jangsaeng Kim, Min-Kyu Park, Jiseong Im, Byung-Gook Park, and Jong-Ho Lee, "Direct Gradient Calculation:Simple and Variation-Tolerant On-Chip Training Method for Neural Networks," Advanced Intelligent Systems, July. 2021 [SCI] DOI : 10.1002/aisy.202100064

[581] Ryoongbin Lee, Junil Lee, Kitae Lee, Soyoun Kim, Hyunho Ahn, Sihyun Kim, Hyun-Min Kim, Changha Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, "Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70mV/Dec Average Subthreshold Swing," IEEE Electron Device Letters, Vol. 42, No. 7, pp. 962-965, July. 2021 [SCI] DOI : 10.1109/LED.2021.3079246

[580] Sihyun Kim, Kitae Lee, Min-Hye Oh, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Physical Unclonable Functions Using Ferroelectric Tunnel Junctions," IEEE Electron Device Letters, Vol. 42, no. 6, pp. 816-819, June. 2021 [SCI] DOI : 10.1109/LED.2021.3075427

[579] Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park, "Nanoscale wedge resistive-switching synaptic device and experimental verification of vector-matrix multiplication for hardware neuromorphic application," Japanese Journal of Applied Physics, Vol. 60, no. 5, 050905, May. 2021 [SCI] DOI : 10.35848/1347-4065

[578] Chong Ho Hong, Hyeon Cheol Kim, Winsu Jatmiko, Kurnianingsih, Kukjin Chun, and Byung-Gook Park, "Distance sensor with a tunable aperture actuated by thermal expansion of silicon chevron beams," Journal of Micromechanics and Microengineering, Vol. 31, no. 6, 065006, May. 2021 [SCI] DOI : 10.1088/1361-6439

[577] Jeesoo Chang, Sungmin Hwang, Kyungchul Park, Taejin Jang, Kyung-Kyu Min, Min-Hye Oh, Jonghyuk Park, Jong-Ho Lee, and Byung-Gook Park, "A Systematic Compact Model Parameter Calibration with Adaptive Pattern Search Algorithm," Applied Sciences, Vol. 11, no.9, p. 4155, May. 2021 [SCI] DOI : 10.339/app11094155

[576] Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park, and Hyungjin Kim, "3-bit multilevel opeartion with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system," Nanotechnology, Vol. 32, no. 29, April. 2021 [SCI] DOI : 10.1088/1361-6528

[575] Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Sungjun Kim, and Byung-Gook Park, "Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiNx/TiN conductive bridging random access memory observed at sub-uA current," Semiconductor Science and Technology, Vol. 36, no. 5, 055014, April. 2021 [SCI] DOI : 10.1088/1361-6641

[574] Chae Soo Kim, Taehyung Kim, Kyung Kyu Min, Yeonwoo Kim, Sungjun Kim, and Byung-Gook Park, "Synaptic Device With High Rectification Ratio Resistive Switching and Its Impact on Spiking Neural Network," IEEE Transactions on Electron Devices, Vol. 68, no. 4, pp. 1610-1615, Apr. 2021 [SCI] DOI : 10.1109/TED.2021.3059182

[573] Sihyun Kim, Ryoongbin Lee, Daewoong Kwon, Tae-Hyeon Kim, Tae Jung Park, Sung-Jin Choi, Hyun-Sun Mo, DaeHwan Kim, and Byung-Gook Park, "Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors with Optimized Multi-Sensing Circuits," IEEE Sensors Journal, Vol. 21, No. 7, pp. 8839-8846, Apr. 2021 [SCI] DOI : 10.1109/JSEN.2021.3054052

[572] Dongseok Kwon, Wonjun Shin, Jong-Ho Bae, Suhwan Lim, Byung-Gook Park, and Jong-Ho Lee,"Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes," IEEE Electron Device Letters, Apr. 2021 [SCI] DOI : 10.1109/LED.2021.3051197

[571] Dongseok Kwon, Gyuweon Jung, Wonjun Shin, Yujeong Jeong, Seongbin Hong, Seongbin Oh, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee,"Low-Power and Reliable Gas Sensing System Based on Recurrent Neural Networks," Sensors and Actuators B: Chemical, 129258, Apr. 2021 [SCI] DOI : 10.1016/j.snb.2020.129258

[570] Young Suh Song, Taejin Jang, Hyun-Min Kim, Jong-Ho Lee, and Byung-Gook Park, "Erase Speed Enhancement with Low Power Operation by Incorporating Boron Doping," Journal of Semiconductor Technology and Science, Vol. 21, no. 2, April. 2021 [SCI] DOI : 10.5573/JSTS.2021.21.2.092

[569] Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, "Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory," IEEE Electron Devices Letters, Mar. 2021 [SCI] DOI : 10.1109/LED.2021.3052306

[568] Jangsaeng Kim, Dongseok Kwon, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Seongbin Hong, Chul-Heung Kim, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Hardware-based Spiking Neural Network Architecture Using Simplified Backpropagation Algorithm and Homeostasis Functionality," Neurocomputing., Mar. 2021 [SCI] DOI : 10.1016/j.snb.2020.129166

[567] Young Suh Song, and Byung-Gook Park, "Retention Enhancement in Low Power NOR Flash Array with High-k-Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide," Micromachines, Vol. 12, no. 3, p. 328, March. 2021 [SCI] DOI : 10.339/mi12030328

[566] Young Suh Song, Sangwan Kim, Garam Kim, Hyunwoo Kim, Jong-Ho Lee, Jang Hyun Kim, and Byung-Gook Park, "Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design," Japanese Journal of Applied Physics, Vol. 60, March. 2021 [SCI] DOI : 10.35848/1347-4065

[565] Jangsaeng Kim, Dongseok Kwon, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Seongbin Oh, Chul-Heung Kim, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "On-chip trainable hardware-based deep Q-networks approximating a backpropagation algorithm," Neural Computing and Applications, Vol. 33, pp. 9391-9402, Feb. 2021 [SCI] DOI : 10.1007/s00521-021-05699-z

[564] Sungmin Hwang, Hyungjin Kim, and Byung-Gook Park, "Quantized Weight Transfer Method Using Spike-Timing-Dependent Plasticity for Hardware Spiking Neural Network," Applied Sciences, Vol. 11, no. 5, p. 2059, Feb. 2021 [SCI] DOI : 10.339/app11052059

[563] Sungmin Hwang, Jeesoo Change, Min-Hye Oh, Kyung Kyu Min, Taejin Jang, Kyungchul Park, Junsu Yu, Jong-Ho Lee and Byung-Gook Park, "Low-Latency Spiking Neural Networks Using Pre-Charged Membrane Potential and Delayed Evaluation," Frontiers in Neuroscience, Vol. 15, Feb. 2021 [SCI] DOI : 10.3389/fnins.2021.629000

[562] Wonjun Shin, Seongbin Hong, Gyuweon Jung, Yujeong Jeong, Jinwoo Park, Donghee Kim, Dongkyu Jang, Byung-Gook Park, and Jong-Ho Lee, "Improved Signal-to-Noise-Ratio of FET-type Gas Sensors Using Body Bias Control and Embedded Micro-Heater," Sens. Actuators B: Chem., Feb. 2021 [SCI] DOI : 10.1016/j.snb.2020.129166

[561] Kyoung Yeon Kim, Kyung Kyu Min, and Byung-Gook Park, "Trap-Induced Data-Retention-Time Degradation of DRAM and Improvement Using Dual Work-Function Metal Gate," IEEE Electron Device Letters, Vol. 42, no. 1, pp. 38-41, Jan. 2021 [SCI] DOI : 10.1109/LED.2020.3037640

[560] Tae-Hyeon Kim, Sungjun Kim, and Byung-Gook Park, "Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM," Microelectronics Engineering, Vol. 237, 111498, Jan. 2021 [SCI] DOI : 10.1016/j.mee.2020.111498

[559] Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Sungjun Kim, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park, "Improvement of Resistive Swtiching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation," IEEE Transactions on Electron Devices, Vol. 68, no. 1, pp. 438-442, Jan. 2021 [SCI] DOI : 10.1109/TED.2020.3037267

[558] Donghyun Ryu, Tae-Hyung Kim, Taejin Jang, Junsu Yu, Jong-Ho Lee, and Byung-Gook Park, "Double-Gated Asymmetric Floating-Gate-Based Synaptic Device for Effective Performance Enhancement Through Online Learning," IEEE Access, pp. 217735-217743, Dec. 2020 [SCI] DOI : 10.1109/ACCESS.2020.3041734

[557] Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation," IEEE Access, pp. 228720-228730, Dec. 2020 [SCI] DOI : 10.1109/ACCESS.2020.3046300

[556] Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim, and Byung-Gook Park, "Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM," Applied Physics Letters, Vol. 117, 202106, Nov. 2020 [SCI] DOI : 10.1063/5.0027757

[555] Hyun-Seok Choi, Hyungjin Kim, Jong-Ho Lee, Byung-Gook Park, and Yoon Kim, "AND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks," IEEE Electron Device Letters, Vol. 41, no. 11, pp. 1653-1656, Nov. 2020 [SCI] DOI : 10.1109/LED.2020.3025587

[554] Sung Yun Woo, Dongseok Kwon, Nagyong Choi, Won-Mook Kang, Min-Kyu Park, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee, "Low-Power and High-Density Neuron Device for Simultaneous Processing of Excitatory and Inhibitory Signals in Neuromorphic System," IEEE Access, Nov. 2020 [SCI] DOI : 10.1109/ACCESS.2020.3036088

[553] Taejin Jang, Myung-Hyun Baek, Suhyeon Kim, Sungmin Hwang, Jeesoo Chang, Kyung Kyu Min, Kyungchul Park, and Byung-Gook Park, "Analysis of a Schottky Barrier MOSFET for Synaptic Device Using Hot Carrier Injection," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 11, pp. 6592-6595, Nov. 2020 [SCI] DOI : 10.1166/jnn.2020.18766

[552] Ji-Ho Ryu, Fayyaz Hussain, Chandreswar Mahata, Muhammad Ismail, Yawar Abbas, Min-Hwi Kim, Changhwan Choi, Byung-Gook Park, and Sungjun Kim, "Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices," Applied Surface Science, Vol. 529, Nov. 2020 [SCI] DOI : 10.1016/j.apsusc.2020.147167

[551] Young Suh Song, Jang Hyun Kim, Garam Kim, Hyun-Min Kim, Sangwan Kim, and Byung-Gook Park, "Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs," IEEE Journal of the Electron Devices Society, Vol. 9, pp. 36-41, Nov. 2020 [SCI] DOI : 10.1109/JEDS.2020.3038391

[550] Kitae Lee, Sihyun Kim, Jong-Ho Lee, Daewoon Kwon, and Byung-Gook Park, "Suppression of reverse drain induced barrier lowering in negative capacitance FDSOI field effect transistor using oxide charge trapping layer," Semiconductor Science and Technology, Vol. 35, no. 12, 125003, Oct. 2020 [SCI] DOI : article/10.1088

[549] Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park, and Hyungjin Kim, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array," Applied Physics Letters, Vol. 117, 152103, Oct. 2020 [SCI] DOI : doi/abs

[548] Min-Hye Oh, Min-Woo Kwon, Kyungchul Park, and Byung-Gook Park, "Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics," IEEE Electron Device Letters, Vol. 41, no. 10, pp. 1548-1551, Oct. 2020 [SCI] DOI : 10.1109/LED.2020.3016119

[547] Hyun Woo Kim, Sihyun Kim, Kitae Lee, Junil Lee, Byung-Gook Park, and Daewoong Kwon, "Demonstration of Tunneling Field-Effect Transistor Ternary Inverter," IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 4541-4544, Oct. 2020 [SCI] DOI : 10.1109/TED.2020.3017186

[546] Md. Hasan Raza Ansari, Sungjae Cho, and Byung-Gook Park, "More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring," Applied Physics A, Vol. 126, p. 839, Oct. 2020 [SCI] DOI : 10.1007/s00339-020-04015-1

[545] Sihyun Kim, Kitae Lee, Jong-Ho Lee, Daewoon Kwon, and Byung-Gook Park, "Vertically Stacked Gate-All-Around Structured Tunneling-Based Ternary-CMOS," IEEE Transactions on Electron Devices, Vol. 67, no. 9, pp. 3889-3893, Sep. 2020 [SCI] DOI : 10.1109/TED.2020.3011384

[544] Wonjun Shin, Gyuweon Jung, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Dongkyu Jang, Donghee Kim, Donseok Kwon, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Proposition of Deposition and Bias Conditions for Optimal Signal-to-Noise-Ratio in Resistor- and FET-type Gas Sensors," Nanoscale, Sep. 2020 [SCI] DOI : 10.1039/D0NR04406G

[543] Wonjun Shin, Gyuweon Jung, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Dongkyu Jang, Byung-Gook Park, and Jong-Ho Lee"Low frequency noise characteristics of resistor- and Si MOSFET-type gas sensors fabricated on the same wafer with In2O3 sensing layer," Sensors and Actuators B: Chemical, Vol. 318, no. 1, Sep. 2020 [SCI] DOI : 10.1016/j.snb.2020.128087

[542] Taejin Jang, Suhyeon Kim, Jeesoo Chang, Kyung Kyu Min, Sungmin Hwang, Kyungchul Park, Jong-Ho Lee, and Byung-Gook Park, "3D AND-Type Stakced Array for Neuromorphic Systems," Micromachines, Vol. 11, no. 9, p. 829, Aug. 2020 [SCI] DOI : 2072-666X/11

[541] Seongjae Cho, Stanley S. Cheung, Yung Hun Jung, Sae-Kyoung Kang, Dal Ho Lee, and Byung-Gook Park, "Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry," Journal of Semiconductor Technology and Science, Vol. 20, no. 4, pp. 366-371, Aug. 2020 [SCI] DOI : html/journal

[540] Kitae Lee, Sihyun Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "Analysis on Reverse Drain-Induced Barrier Lowering and Negative Differential Resistance of Ferroelectric-Gate Field-Effect Transistor Memory," IEEE Electron Device Letters, vol. 41, no. 8, pp. 1197-1200, Aug. 2020 [SCI] DOI : 10.1109/LED.2020.3000766

[539] Kitae Lee, Jong-Ho Bae, Sihyun Kim, Jong-ho Lee, Byung-Gook Park, and Daewoong Kwon, "Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel," IEEE Electron Device Letters, Vol. 41, no. 8, pp. 1201-1204, Aug. 2020 [SCI] DOI : 10.1109/LED.2020.3001129

[538] Chae Soo Kim, Taehyung Kim, Kyung Kyu Min, Sungjun Kim, and Byung-Gook Park, "3D Integrable W/SiNx/n-Si/p-Si 1D1R Unipolar Resistive Random Access Memory Synapse for Suppressing Reverse Leakage in Spiking Neural Network," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 8, pp. 4735-4739, Aug. 2020 [SCI] DOI : 10.1166/jnn.2020.17806

[537] Eunseon Yu, Seongjae Cho, Kaushik Roy, and Byung-Gook Park, "A Quantum-Well Charge-Trap Synaptic Transistor With Highly Linear Weight Tunability," IEEE Journal of the Electron Devices Society, Vol. 8, pp. 834-840, Jul. 2020 [SCI] DOI : 10.1109/JEDS.2020.3011409

[536] Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, and Sungjun Kim, "Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering," IEEE Access, Vol. 8, pp. 130678-130686, Jul. 2020 [SCI] DOI : 10.1109/ACCESS.2020.3005303

[535] Jinju Lee, Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Chandreswar Mahata, Eunjin Sim, Muhammad Ismail, Yawar Abbas, Haider Abbas, Dong Keun Lee, Min-Hwi Kim, Yoon Kim, Changhwan Choi, Byung-Gook Park, and Sungjun Kim, "Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering," ACS Applied Materials & Interfaces, Vol. 12, no. 30, pp. 33908-33916, Jul. 2020 [SCI] DOI : 10.1021/acsami.0c07867

[534] Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho and Byung-Gook Park, "Multi-Level Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application," Electronics, Vol. 9, no. 8, pp. 1-8, Jul. 2020 [SCI] DOI : 10.339/electronics9081228

[533] Kitae Lee, Sihyun Kim, Daewoong Kwon and Byung-Gook Park, "Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor using TCAD Simulation," Applied Sciences, Vol. 10, no. 14, p. 4977, Jul. 2020 [SCI] DOI : 10.339/app10144977

[532] Dongseok Kwon, Suhwan Lim, Jong-Ho Bae, Sung-Tae Lee, Hyeong-Su Kim, Young-Tak Seo, Seongbin Oh, Jansaeng Kim, Kyuho Yeom, Byung-Gook Park, and Jong-Ho Lee"On-Chip Training Spiking Neural Networks Using Approximated Backpropagation With Analog Synaptic Devices," Frontiers in Neuroscience, Vol. 14, no. 423, Jul. 2020 [SCI] DOI : 10.3389/fnins.2020.00423

[531] Young Suh Song, Sungmin Hwang, Kyung Kyu Min, Taejin Jang, Yunho Choi, Junsu Yu, Jong-Ho Lee, and Byung-Gook Park, "Electrical and Thermal Performances of Omega-Shaped-Gate Nanowire Field Effect Transistors for Low Power Operation," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 7, pp. 4092-4096, Jul. 2020 [SCI] DOI : 10.1166/jnn.2020.17787

[530] Young-Tak Seo, Min-Kyu Park, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 7, pp. 4292-4297, Jul. 2020 [SCI] DOI : 10.1166/jnn.2020.17788

[529] Ryoongbin Lee, Junil Lee, Kitae Lee, Soyoun Kim, Sihyun Kim, Sangwan Kim, and Byung-Gook Park, "I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High I ON/I OFF Ratio," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 7, pp. 4298-4302, Jul. 2020 [SCI] DOI : 10.1166/jnn.2020.17794

[528] Sung-Tae Lee, Suhwan Lim, Nagyong Choi, Jong-Ho Bae, Dongseok Kwon, Hyeong-Su Kim, Byung-Gook Park, and Jong-Ho Lee, "Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 7, pp. 4138-4142, Jul. 2020 [SCI] DOI : 10.1166/jnn.2020.17791

[527] Suhyeon Kim, Myung-Hyun Baek, Sungmin Hwang, Taejin Jang, Kyungchul Park, and Byung-Gook Park, "A Novel Vector-matrix Multiplication (VMM) Architecture based on NAND Memory Array," Journal of Semiconductor Technology and Science, Vol. 20, no. 3, pp. 242-248, Jun. 2020 [SCI] DOI : html/journal

[526] Young Suh Song, Taejin Jang, Kyung Kyu Min, Myung-Hyun Baek, Junsu Yu, Yeonwoo Kim, Jong-Ho Lee, and Byung-Gook Park, "Tunneling Oxide Engineering for Improving Retention in Nonvolatile Charge-Trapping Memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si Structure," Japanese Journal of Applied Physics, Vol. 59, no. 6, pp. 061006, Jun. 2020 [SCI] DOI : 10.35848/1347-4065

[525] Sihyun Kim, Munhyeon Kim, Donghyun Ryu, Kitae Lee, Soyoun Kim, Junil Lee, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, "Investigation of Electrical Characteristic Behavior induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs," IEEE Transactions on Electron Devices, Vol. 67 , no. 6, pp. 2648-2652, Jun. 2020 [SCI] DOI : 10.1109/TED.2020.2989416

[524] Chandreswar Mahata, Changmin Lee, Youngseo An, Min-Hwi Kim, Suhyun Bang, Chae Soo Kim, Ji-Ho Ryu, Sungjun Kim, Hyoungsub Kim, and Byung-Gook Park, "Resistive switching and synaptic behaviors of an HfO2/Al2O3stack onITO for neuromorphic system," Journal of Alloys and Compounds, Vol. 826, p. 154434, Jun. 2020 [SCI] DOI : 10.1016/j.jallcom.2020.154434

[523] Tae-hyeon Kim, Min-Hwi Kim, Suhyung Bang, Dong Keun Lee, Sungjun Kim, Sungjae Cho, and Byung-Gook Park, "Fabrication and Characterization of TiOx Memristor for Synaptic Device Application," IEEE Transactions on Nanotechnology, Vol. 19, pp. 475-480, May. 2020 [SCI] DOI : 10.1109/TNANO.2020.2996814

[522] Mehr Khalid Rahmani, Min-Hwi Kim, Fayyaz Hussain, Yawar Abbas, Muhammad Ismail, Kyungho Hong, Chandreswar Mahata, Changhwan Choi, Byung-Gook Park, and Sungjun Kim, "Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate," Nanomaterials, Vol. 10, no. 5, p. 994, May. 2020 [SCI] DOI : 2079-4991/10

[521] Sungmin Hwang, Jeong-Jun Lee, Min-Woo Kwon, Myung-Hyun Baek, Taejin Jang, Jeesoo Chang, Jong-Ho Lee, and Byung-Gook Park, "Analog Complementary Metal?€?Oxide?€?Semiconductor Integrate-and-Fire Neuron Circuit for Overflow Retaining in Hardware Spiking Neural Networks," Journal of Nanoscience and Nanotechnology, Vol. 20, no. 5, pp. 3117-3122, May. 2020 [SCI] DOI : 10.1166/jnn.2020.17390

[520] Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM," IEEE Transactions on Electron Devices, Vol. 67, no. 4, pp. 1600-1605, Apr. 2020 [SCI] DOI : 10.1109/TED.2020.2976106

[519] Donghyun Ryu, Munhyeon Kim, Junsu Yu, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, "Investigation of Sidewall High-k interfacial Layer Effect in Gate-All-Around Structure," IEEE Transactions on Electron Devices, Vol. 67, no. 4, pp. 1859-1863, Apr. 2020 [SCI] DOI : 10.1109/TED.2020.2975255

[518] Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "HfOx-based Nano-wedge Structured Resistive Switching Memory Device Operating at sub-??A Current for Neuromorphic Computing Application," Semiconductor Science and Technology, Vol. 35, no. 5, pp. 055002.1-10, Mar. 2020 [SCI] DOI : 10.1088/1361-6641

[517] Donghyun Ryu, Munhyeon Kim, Sihyun Kim, Yunho Choi, Junsu Yu, Jong-Ho Lee, and Byung-Gook Park, "Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective," IEEE Transactions on Electron Devices, Vol. 67, no. 3, pp. 1317-1322, Mar. 2020 [SCI] DOI : 10.1109/TED.2020.2969445

[516] Sung Yun Woo, Kyu-Bong Choi, Jangsaeng Kim, Won-Mook Kang, Chul-Heung Kim, Young-Tak Seo, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network," Solid State Electronics, Vol. 165, Mar. 2020 [SCI] DOI : 10.1016/j.sse.2019.107741

[515] Jangsaeng Kim, Chul-Heung Kim, Sung Yun Woo, Won-Mook Kang, Young-Tak Seo, Soochang Lee, Seongbin Oh, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network," Solid State Electronics, Vol. 165, Mar. 2020 [SCI] DOI : 10.1016/j.sse.2019.107742

[514] Kyung Kyu Min, Sungmin Hwang, Jong-Ho Lee, and Byung-Gook Park, "Vertical Inner Gate (VIG) Transistors for 4F2 DRAM Cell," IEEE Transactions on Electron Devices, Vol. 67, no. 3, pp. 944-948, Mar. 2020 [SCI] DOI : 10.1109/TED.2020.2967392

[513] Sungman Rhee, Daewon Kim, Kyeongyeon Kim, Seongwook Choi, Byung-Gook Park, and Young June Park, "Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices," IEEE Journal of the Electron Devices Society, Vol. 8, pp. 213-222, Feb. 2020 [SCI] DOI : 10.1109/JEDS.2020.2971426

[512] Kitae Lee, Junil Lee, Sihyun Kim, Ryoongbin Lee, Soyoun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, "Negative Capacitance Effect on MOS Structure:influence of Electric Field Variation," IEEE Transactions on Nanotechnology, Vol. 19, pp. 168-171, Feb. 2020 [SCI] DOI : 10.1109/TNANO.2020.2972605

[511] Yunho Choi, Kitae Lee, Kyoung Yeon Kim, Sihyun Kim, Junil Lee, Ryoongbin Lee, Hyun-Min Kim, Young Suh Song, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, "Simulation of the effect of pSimulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FETarasitic channel height on characteristics of stacked gate-all-around nanosheet FET," Solid-State Electronics, Vol. 164, Feb. 2020 [SCI] DOI : 10.1016/j.sse.2019.107686

[510] Junil Lee, Ryoongbin Lee, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Soyoun Kim, Munhyeon Kim, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, "Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique," Solid-State Electronics, Vol. 164, Feb. 2020 [SCI] DOI : 10.1016/j.sse.2019.107701

[509] Sungmin Hwang, Jeesoo Chang, Min-Hye Oh, Jong-Ho Lee, and Byung-Gook Park, "Impact of the Sub-Resting Membrane Potential on Accurate Inference in Spiking Neural Networks," Scientific Reports, Vol. 10, no. 3515, Feb. 2020 [SCI] DOI : 10.1038/s41598-020-60572-8

[508] Taehyung Kim, Kyungchul Park, Taejin Jang, Myung-Hyun Baek, Young Suh Song, and Byung-Gook Park, "Input-modulating adaptive neuron circuit employing asymmetric floating-gate MOSFET with two independent control gates," Solid State Electronics, Vol. 163, Jan. 2020 [SCI] DOI : 10.1016/j.sse.2019.107667

[507] Yoonki Hong, Meile Wu, Jong-Ho Bae, Seongbin Hong, Yujeong Jeong, Dongkyu Jang, Jun Shik Kim, Cheol Seong Hwang, Byung-Gook Park, and Jong-Ho Lee, "A new sensing mechanism of Si FET-based gas sensor using pre-bias," Sensors and Actuators B: Chemical, Vol. 302, Jan. 2020 [SCI] DOI : 10.1016/j.snb.2019.127147

[506] Hyungjin Kim, and Byung-Gook Park, "Solving Overlapping Pattern Issues in On-Chip Learning of Bio-Inspired Neuromorphic System with Synaptic Transistors," Journal of Nanoscience and Nanotechnology, Vol. 9, no. 1, p. 13, Jan. 2020 [SCI] DOI : 10.339/electronics9010013

[505] Min-Kyu Park, Ho-Nam Yoo, Young-Tak Seo, Sung Yun Woo, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Field Effect Transistor-Type Devices Using High-?? Gate Insulator Stacks for Neuromorphic Applications," ACS Applied Electronic Materials, Dec. 2019 [SCI] DOI : 10.1021/acsaelm.9b00698

[504] Junsu Yu, Sihyun Kim, Donghyun Ryu, Kitae Lee, Changha Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, "Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor," Micromachines, Vol. 10, no. 11, p. 753, Nov. 2019 [SCI] DOI : 10.339/mi10110753

[503] Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Dongseok Kwon, Byung-Gook Park, and Jong-Ho Lee, "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices," Neural Computing and Applications, Vol. 31, no. 11, pp. 8101-8116, Nov. 2019 [SCI] DOI : 10.1007/s00521-018-3659-y

[502] Hyeongsu Kim, Jong-Ho Bae, Suhwan Lim, Sung-Tae Lee, Young-Tak Seo, Dongseok Kwon, Byung-Gook Park, and Jong-Ho Lee, "Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy," Neurocomputing, Oct. 2019 [SCI] DOI : 10.1016/j.neucom.2019.09.099

[501] Eunseon Yu, Seongjae Cho, and Byung-Gook Park, "A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems," Electronics, Vol. 8, no. 10, p. 1102, Oct. 2019 [SCI] DOI : 10.339/electronics8101102

[500] Myung-Hyun Baek, Taejin Jang, Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, Suhyeon Kim, Jeong-Jun Lee, and Byung-Gook Park, "Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices," Japanese Journal of Applied Physics, Vol. 58, no. 10, p. 101004, Oct. 2019 [SCI] DOI : 10.7567/1347-4065

[499] Kyungchul Park, Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Taejin Jang, Taehyung Kim, and Byung-Gook Park, "Analysis of Minority Carrier Lifetime Dependence on Dual Gate Feedback Field Effect Transistor," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6767-6770, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17107

[498] Myung-Hyun Baek, Taejin Jang, Min-Woo Kwon, Sungmin Hwang, Suhyeon Kim, and Byung-Gook Park, "Polysilicon-Based Synaptic Transistor and Array Structure for Short/Long-Term Memory," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6066-6069, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17002

[497] Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Sungmin Hwang, Tejin Jang, and Byung-Gook Park, "Simulation Program with Integrated Circuit Emphasis Compact Modeling of a Dual-Gate Positive-Feedback Field-Effect Transistor for Circuit Simulations," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6417-6421, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17069

[496] Taehyung Kim, Young Suh Song, and Byung-Gook Park, "Overflow Handling Integrate-and-Fire Silicon-on-Insulator Neuron Circuit Incorporating a Schmitt Trigger Implemented by Back-Gate Effect," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6183-6186, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17004

[495] Jang Hyun Kim, Hyun Woo Kim, Seong-Su Shin, Sangwan Kim, and Byung-Gook Park, "Transient Analysis of Tunnel Field-Effect Transistor with Raised Drain," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6212-6216, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17018

[494] Kitae Lee, Junil Lee, Sihyun Kim, Euyhwan Park, Ryoongbin Lee, Hyun-Min Kim, Sangwan Kim, and Byung-Gook Park, "Tunnel Field Effect Transistor with Ferroelectric Gate Insulator," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6095-6098, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.16994

[493] Jeesoo Chang, Sihyun Kim, Junil Lee, Ryoongbin Lee, Hyun-Min Kim, Kitae Lee, and Byung-Gook Park, "Partial Contact Etching and Gate Lowering on Tunneling Field Effect Transistor for Performance and Power Enhancement," Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp. 6808-6811, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17114

[492] Taejin Jang, Myung-Hyun Baek, Min-Woo Kwon, Sungmin Hwang, Jeesoo Chang, Kyung Kyu Min, Kyungchul Park, and Byung-Gook Park, "Analysis of Hot Carrier Injection According to Gate Length," Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp. 6746-6749(4), Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17102

[491] Sungmin Hwang, Hyungjin Kim, Min-Woo Kwon, Jungjin Park, and Byung-Gook Park, "An Online Learning Method Using Spike-Timing Dependent Plasticity for Neuromorphic Systems," Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp. 6776-6780(5), Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17120

[490] Ryoongbin Lee, Kitae Lee, Sihyun Kim, Dae Woong Kwon, Sangwan Kim, and Byung-Gook Park, "Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO2 Sidewall," Journal of Nanoscience and Nanotechnology, Vol. 19, no. 10, pp. 6061-6065, Oct. 2019 [SCI] DOI : 10.1166/jnn.2019.17001

[489] Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Junil Lee, and Byung-Gook Park, "A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS," Journal of the Electron Devices Society, Vol. 7, no. 1, pp. 1080-1084, Sep. 2019 [SCI] DOI : 10.1109/JEDS.2019.2941917

[488] Hui Tae Kwon, Won Joo Lee, Hyun-Seok Choi, Daehoon Wee, Yu Jeong Park, Boram Kim, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park, and Yoon Kim, "Resistive random-access memory with an a-Si/SiNx double-layer," Solid-State Electronics, Vol. 158, pp. 64-69, Oct. 2019 [SCI] DOI : 10.1016/j.sse.2019.05.014

[487] Jong-Ho Bae, Jong-Won Back, Min-Woo Kwon, Jae Hwa Seo, Keon Yoo, Sung Yun Woo, Kyungchul Park, Byung-Gook Park, and Jong-Ho Lee, "Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications," IEEE Electron Device Letters, Aug. 2019 [SCI] DOI : 10.1109/LED.2019.2933504

[486] Jaehong Lee, Byung-Gook Park, and Yoon Kim, "Implementation of Boolean Logic Functions in Charge Trap Flash for In-Memory Computing," IEEE Electron Device Letters, Vol. 40, no. 9, pp. 1358-1361, Jul. 2019 [SCI] DOI : 10.1109/LED.2019.2928335

[485] Dae woong Kwon, Do-Bin Kim, Junil Lee, Sihyun Kim, Ryoongbin Lee, Jong-Ho Lee, and Byung-Gook Park, "Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory," IEEE Transactions on Electron Devices, Vol. 66, no. 8, pp. 3326-3330, Jun. 2019 [SCI] DOI : 10.1109/TED.2019.2920127

[484] Sung Yun Woo, Kyu-Bong Choi, Suhwan Lim, Sung-Tae Lee, Chul-Heung Kim, Won-Mook Kang, Dongseok Kwon, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Synaptic device using a floating fin-body MOSFET with memory functionality for neural network," Solid-State Electronics, Vol. 156, pp. 23-27, Jun. 2019 [SCI] DOI : 10.1016/j.sse.2019.02.011

[483] Chandreswar Mahata, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon-Joon Choi, Sungjun Kim, and Byung-Gook Park, "SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory," Applied Physics Letters, Vol. 114, pp. 182102, May. 2019. [SCI] DOI : doi/full

[482] Jang Hyun Kim, Jeesoo Chang, Sangwan Kim, and Byung-Gook Park, "Oxide Thin Film Transistor With a Novel Gate Insulator Stack to Suppress Photo-Excited Charge Injection," IEEE Transactions on Nanotechnology, Vol. 18, pp. 491-493, May. 2019. [SCI] DOI : 10.1109/TNANO.2019.2915170

[481] Suhwan Lim, Dongseok Kwon, Jai-Ho Eum, Sung-Tae Lee, Jong-Ho Bae, Hyeongsu Kim, Chul-Heung Kim, Byung-Gook Park, and Jong-Ho Lee, "Highly Reliable Inference System of Neural Networks Using Gated Schottky Diodes," Journal of the Electron Devices Society, Apr. 2019 [SCI] DOI : 10.1109/JEDS.2019.2913146

[480] Jong-Ho Bae, Hyeongsu Kim, Dongseok Kwon, Suhwan Lim, Sung-Tae Lee, Byung-Gook Park, and Jong-Ho Lee, "Reconfigurable Field-Effect Transistor as a Synaptic Device for XNOR Binary Neural Network," Electron Device Letters, Vol. 40, no. 4, pp. 624-627, Apr. 2019 [SCI] DOI : 10.1109/LED.2019.2898448

[479] Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation," Solid-State Electronics, Vol. 154, pp. 31-35, Apr. 2019 [SCI] DOI : 10.1016/j.sse.2019.02.008

[478] Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, and Byung-Gook Park, "Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices," IEICE Electronics Express, Vol. 16, no. 16, Apr. 2019 [SCI] DOI : 10.1587/elex.16.20190404

[477] Nagyong Choi, Ho-Jung Kang, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells," IEEE Electron Device Letters, Vol. 40, no. 5, pp. 702-705, Mar. 2019 [SCI] DOI : 10.1109/LED.2019.2905299

[476] Jae Yoon Lee, Youngmin Kim, Min-Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park, "Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling," Vacuum, Vol. 161, pp. 63-70, Mar. 2019 [SCI] DOI : 10.1016/j.vacuum.2018.12.020

[475] Eunseon Yu, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park, "A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency," IEEE Electron Device Letters, Vol. 40, no. 4, pp. 562-565, Feb. 2019 [SCI] DOI : 10.1109/LED.2019.2902334

[474] Jang Hyun Kim, Sangwan Kim, and Byung-Gook Park, "Double-gate TFET with vertical channel sandwiched by lightly doped Si," IEEE Transactions on Electron Devices, Vol. 66, no. 4, pp. 1656-1661, Feb. 2019 [SCI] DOI : 10.1109/TED.2019.2899206

[473] Jong-Ho Bae, Suhwan Lim, Dongseok Kwon, Jai-Ho Eum, Sung-Tae Lee, Hyeongsu Kim, Byung-Gook Park, and Jong-Ho Lee, "Near-Linear Potentiation Mechanism of Gated Schottky Diode as a Synaptic Device," Journal of the Electron Devices Society, Vol. 7, pp. 335-343, Feb. 2019 [SCI] DOI : 10.1109/JEDS.2019.2898674

[472] Junil Lee, Ryoongbin Lee, Sihyun Kim, Euyhwan Park, Hyun-Min Kim, Kitae Lee, Sangwan Kim, and Byung-Gook Park, "Fabrication Methods for Nanowire Tunnel FET with Locally Concentrated Silicon-germanium Channel," Journal of Semiconductor Technology and Science, Vol. 19, no. 1, pp. 18-23, Feb. 2019 [SCI] DOI : 10.5573/JSTS.2019.19.1.018

[471] Sang-Ho Lee, Dae Woong Kwon, Seunghyun Kim, Myung-Hyun Baek, Sungbok Lee, Jinkyu Kang, Woojae Jang, and Byung-Gook Park, "Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory," Solid-State Electronics, Vol. 152, pp. 41-45, Feb. 2019 [SCI] DOI : 10.1016/j.sse.2018.11.009

[470] Young-Tak Seo, Myoung-Sun Lee, Chul-Heung Kim, Sung Yun Woo, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Si-Based FET-Type Synaptic Device With Short-Term and Long-Term Plasticity Using High-?? Gate-Stack," IEEE Transactions on Electron Devices, Vol. 66, no. 2, pp. 917-923, Feb. 2019 [SCI] DOI : 10.1109/TED.2018.2888871

[469] Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, and Byung-Gook Park, "Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain," Micromachines, Vol. 10, no. 1, p. 30, Jan. 2019 [SCI] DOI : 10.339/mi10010030

[468] Sungjun Kim, Chen Jia, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiang-shui Miao, Yao-Feng Chang, and Byung-Gook Park, "Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching," Nanoscale, Vol. 11, pp.237-245, Jan. 2019 [SCI] DOI : 10.1039/C8NR06694A

[467] Dongseok Kwon, Suhwan Lim, Jong-Ho Bae, Sung-Tae Lee, Hyeongsu Kim, Chul-Heung Kim, Byung-Gook Park and Jong-Ho Lee, "Adaptive Weight Quantization Method for Nonlinear Synaptic Devices," IEEE Transactions on Electron Devices, Vol. 66, no. 1, pp. 395-401, Jan. 2019 [SCI] DOI : 10.1109/TED.2018.2879821

[466] Yongbeom Cho, Jae Yoon Lee, Eunseon Yu, Jae-Hee Han, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park, "Design and Characterization of Semi-Floating-Gate Synaptic Transistor," Micromachines, Vol. 10, no. 1, pp. 32-41, Jan. 2019 [SCI] DOI : 10.339/mi10010032

[465] Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Gradual switching and self-rectifying characteristics of Cu/??-IGZO/p+-Si RRAM for synaptic device application," Solid-State Electronics, Vol. 150, pp. 60-65, Dec. 2018 [SCI] DOI : 10.1016/j.sse.2018.10.003

[464] Taejin Jang, Myung-Hyun Baek, Hyungjin Kim, and Byung-Gook Park, "An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET," Journal of Nanoscience and Nanotechnology, Vol. 18, No. 9, pp. 6584-6587, Sep. 2018 [SCI] DOI : 10.1166/jnn.2018.15702

[463] Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, and Byung-Gook Park, "Concurrent events of memory and threhold switching in Ag/SiNx/Si devices," Journal of Vacuum Science & Technology B, Vol. 36, pp. 051203, Sep. 2018 [SCI] DOI : 10.1116/1.5034058

[462] Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park, ?€?Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation,?€? Journal of applied physics,  Vol. 124, pp. 152107, Sep. 2018 [SCI] DOI : 10.1063/1.5031929

[461] Hyun-Min Kim, Dae Woong Kwon, Sihyun Kim, Kitae Lee, Junil Lee, Euyhwan Park, Ryoongbin Lee, Hyungjin Kim, Sangwan Kim, and Byung-Gook Park, ?€?Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure,?€? Journal of Nanoscience and Nanotechnology,  Vol. 18, No. 9, pp. 5882-5886, Sep. 2018 [SCI] DOI : 10.1166/jnn.2018.15570

[460] Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Sungjun Kim, and Byung-Gook Park, "Spiking Neural Networks with Unsupervised Learning Based on STDP Using Resistive Synaptic Devices and Analog CMOS Neuron Circuit," Journal of Nanoscience and Nanotechnology, Vol. 18, No. 9, pp. 6588-6592(5), Sep. 2018 [SCI] DOI : 10.1166/jnn.2018.15700

[459] Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, Kitae Lee, Sangwan Kim, and Byung-Gook Park, "A 1T dynamic random access memory cell based on gated thyristor with surrounding gate structure for high scalability," Journal of Nanoscience and Nanotechnology, Vol. 18, No. 9, pp. 5919-5924, Sep. 2018 [SCI] DOI : 10.1166/jnn.2018.15569

[458] Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, and Byung-Gook Park, "Dual functions of V/SiOx/AlOy/p++Si device as selector and memory," Nanoscale Research Letters, Vol. 13, pp. 252, Aug. 2018 [SCI] DOI : 10.1186/s11671-018-2660-9

[457] Taehyung Kim, Min-Hye Oh, Min-Woo Kwon, and Byung-Gook Park, "Integrate-and-fire spiking neuron circuit exhibiting spike-triggered adaptation through input current modulation with back gate effect," Electronics Letters, Vol. 54, No. 17, pp. 1022?€?1024, Aug. 2018 [SCI] DOI : 10.1049/el.2018.5047

[456] Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Ryoongbin Lee, Tae-Hyeon Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, "Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement," Current Applied Physics, Vol. 18, No. Supplement, pp. S68-S74, Aug. 2018 [SCI] DOI : 10.1016/j.cap.2017.11.021

[455] Sungmin Hwang, Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Myung-Hyun Baek, Jeong-Jun Lee, and Byung-Gook Park, "System-Level Simulation of Hardware Spiking Neural Network Based on Synaptic Transistors and I&F Neuron Circuits," Electron Device Letters, Vol. 39, No. 9, pp. 1441-1444, Jul. 2018 [SCI] DOI : 10.1109/LED.2018.2853635

[454] Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Dongseok Kwon, Byung-Gook Park, and Jong-Ho Lee, "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices," Neural Computing and Applications, Jul. 2018 [SCI] DOI : 10.1007/s00521-018-3659-y

[453] Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park, "Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current," IEEE Transactions on Nanotechnology, Vol. 17, No. 4, pp. 824-828, May 2018 [SCI] DOI : 10.1109/TNANO.2018.2842071

[452] Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park, "Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate," Small, Vol. 14, No. 19, pp. 1704062, May 2018 [SCI] DOI : 10.1002/smll.201704062

[451] Sangwan Kim, Woo Young Choi, and Byung-Gook Park, "Vertical-Structured Electron-Hole Bilayer Tunnel Field-Effect Transistor for Extremely Low-Power Operation With High Scalability," IEEE Transactions on Electron Devices, Vol. 65, no. 5, pp. 2010-2015, May 2018 [SCI] DOI : 10.1109/TED.2018.2817569

[450] Dae Woong Kwon, Ryoongbin Lee, Sihyun Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, "A Novel Fabrication Method for Co-integrating ISFET with Damage-Free Sensing Oxide and Threshold Voltage-Tunable CMOS Read-out Circuits," Sensors and Actuators B: Chemical, Vol. 260, pp. 627-634, May 2018 [SCI] DOI : 10.1016/j.snb.2017.12.193

[449] Hyungjin Kim, Sungmin Hwang, Jungjin Park, Sangdoo Yun, Jong-Ho Lee, and Byung-Gook Park, "Spiking neural network using synaptic transistors and neuron circuits for pattern recognition with noisy images," IEEE Electron Device Letters, Vol. 39, No. 4, pp. 630-633, Apr. 2018 [SCI] DOI : 10.1109/LED.2018.2809661

[448] Jongmin Shin, Yoonki Hong, Meile Wu, Jong-Ho Bae, Hyuck-In Kwon, Byung-Gook Park, and Jong-Ho Lee, "An accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS2 as a sensing layer by pulse measurement," Sensors and Actuators B, Vol. 258, pp. 574-579, Apr. 2018 [SCI] DOI : 10.1016/j.snb.2017.11.132

[447] Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park, "Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model," Journal of Computational Electronics, Vol. 17, pp. 273-278, Mar. 2018 [SCI] DOI : 10.1007/s10825-017-1116-2

[446] Youngmin Kim, Min-Woo Kwon, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park, ?€?Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption,?€? IEEE Electron Device Letters, Vol. 39, no. 3, pp. 355-358, Mar. 2018 [SCI] DOI : 10.1109/LED.2018.2796139

[445] Dae Woong Kwon, Junil Lee, Sihyun Kim, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, "Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3D NAND Flash Memory." IEEE Journal of the Electron Devices Society, Vol. 6, pp. 286-290, Feb. 2018 [SCI] DOI : 10.1109/JEDS.2018.2801219

[444] Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park, "Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device," Solid-State Electronics, Vol. 140, pp. 51-54, Feb. 2018 [SCI] DOI : 10.1016/j.sse.2017.10.015

[443] Jeong-Jun Lee, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, Hyungjin Kim, and Byung-Gook Park, "Integrated neuron circuit for implementing neuromorphic system with synaptic device," Solid-State Electronics, Vol. 140, pp. 34-40, Feb. 2018 [SCI] DOI : 10.1016/j.sse.2017.10.012

[442] Do-Bin Kim, Dae Woong Kwon, Seunghyun Kim, Sang-Ho Lee, and Byung-Gook Park, "Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation," Solid-State Electronics, Vol. 140, pp. 46-50, Feb. 2018 [SCI] DOI : 10.1016/j.sse.2017.10.014

[441] Sihyun Kim, Dae Woong Kwon, Euyhwan Park, Junil Lee, Roongbin Lee, Jong-Ho Lee, and Byung-Gook Park, "Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)," Solid-State Electronics, Vol. 140, pp. 41-45, Feb. 2018 [SCI] DOI : 10.1016/j.sse.2017.10.013

[440] Won-Mook Kang, SungTae Lee, In-Tak Cho, Tae Hyung Park, Hyeonwoo Shin, Cheol Seong Hwang, Changhee Lee, Byung-Gook Park, and Jong-Ho Lee, "Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment," Solid-State Electronics, Vol. 140, pp. 2-7, Feb. 2018 [SCI] DOI : 10.1016/j.sse.2017.10.008

[439] Hyun-Seok Choi, Dae-Hoon Wee, Hyungjin Kim, Sungjun Kim, Kyung-Chang Ryoo, Byung-Gook Park, and Yoon Kim, "Three-dimensional floating-gate synapse array with spike-time-dependent plasticity," IEEE Transactions on Electron Devices, Vol. 65, No. 1, pp. 101-107, Jan. 2018 [SCI] DOI : 10.1109/TED.2017.2775233

[438] Hyungjin Kim, Min-Chul Sun, Sungmin Hwang, Hyun-Min Kim, Jong-Ho Lee, and Byung-Gook Park, "Fabrication of asymmetric independent dual-gate FinFET using sidewall spacer patterning and CMP processes," Microelectronic Engineering, Vol. 185-186, pp. 29-34, Jan. 2018 [SCI] DOI : 10.1016/j.mee.2017.10.014

[437] Ryoongbin Lee, Dae Woong Kwon, Sihyun Kim, Sangwan Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, "Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor," Japanese Journal of Applied Physics, Vol. 56, No. 12, p. 124001, Dec. 2017 [SCI] DOI : 10.7567/JJAP.56.124001

[436] Sungjun Kim,??Hyungjin Kim,??Sungmin Hwang,??Min-Hwi Kim,??Yao-Feng Chang, and??Byung-Gook Park, "Analog Synaptic Behavior of a Silicon Nitride Memristor," ACS Applied Materials & Interfaces, Vol. 9, No. 46, pp. 40420-40427, Nov. 2017 [SCI] DOI : 10.1021/acsami.7b11191

[435] Ryoongbin Lee, Dae Woong Kwon, Sihyun Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, "New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 11, pp. 8280-8284, Nov. 2017 [SCI] DOI : 10.1166/jnn.2017.15123

[434] Sihyun Kim, Dae Woong Kwon, Ryoongbin Lee, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park, "Novel Fabrication Method for Forming Damage-Free Sensing Oxide and Threshold Voltage-Tunable Complementary Metal-Oxide Semiconductor in a pH Sensor-CMOS Hybrid System," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 11, pp. 8265-8270, Nov. 2017 [SCI] DOI : 10.1166/jnn.2017.15122

[433] Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park, "Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory," Journal of Semiconductor Technology and Science, Vol. 17, No. 5, pp. 1598-1657, Oct. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.4.584

[432] Sungjun Kim, Min-Hwi Kim, Byung-Gook Park, "Understanding Reset Transitions in Ni/SiN x/Si Resistive Random-Access Memory," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 10, pp. 7231-7235, Oct. 2017 [SCI] DOI : 10.1166/jnn.2017.14713

[431] Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park, "Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 10, pp. 7160-7163, Oct. 2017 [SCI] DOI : 10.1166/jnn.2017.14760

[430] Dae Woong Kwon, Jang Hyun Kim, Euyhwan Park, Junil Lee, Sangwan Kim, Byung-Gook Park, "Switching Characteristic Analysis of Tunnel Field-Effect Transistor (TFET) Inverters," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 10, pp. 7134-7139, Oct. 2017 [SCI] DOI : 10.1166/jnn.2017.14714

[429] Yongbeom Cho, Seongjae Cho, Byung-Gook Park, James S Harris, "First-principle Study for More Accurate Optical and Electrical Characterization of Ge 1-x Sn x Alloy for Si and Group-IV Device Applications," Journal of Semiconductor Technology and Science, Vol. 17, No. 5, pp. 675-684, Oct. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.4.675

[428] Hyungjin Kim, Sungmin Hwang, Jungjin Park, and Byung-Gook Park, "Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system," Nanotechnology, Vol. 28, No. 40, p. 405202, Oct. 2017 [SCI] DOI : 10.1088/1361-6528

[427] Dae Woong Kwon, Sihyun Kim, Ryoongbin Lee, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park, "Macro modeling of ion sensitive field effect transistor with current drift," Sensors and Actuators B: Chemical, Vol. 249, pp. 564-570, Oct. 2017 [SCI] DOI : 10.1016/j.snb.2017.03.110

[426] Eunseon Yu, Seongjae Cho, Byung-Gook Park, "An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures," Physica B: Condensed Matter, Vol. 521, pp. 305-311, Sep. 2017 [SCI] DOI : 10.1016/j.physb.2017.06.048

[425] Sungjun Kim, Yao-Feng Chang,??Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park, "Ultralow power switching in silicon-rich SiNy/SiNx double-layer resistive memory device," Physical Chemistry Chemical Physics, Vol. 19, No. 29, pp. 18988-18995, Aug. 2017 [SCI] DOI : 10.1039/C7CP03120C

[424] Jong-Ho Bae, Suhwan Lim, Byung-Gook Park, and Jong-Ho Lee, "High-Density and Near-Linear Synaptic Device Based on a Reconfigurable Gated Schottky Diode," IEEE Electron Device Letters, Vol. 38, pp. 1153-1156, Aug. 2017 [SCI] DOI : document/7944677

[423] Ho-Jung Kang, Nagyong Choi, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee, "Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells," IEEE Electron Device Letters, Vol. 38, pp. 867-870, Jul. 2017 [SCI] DOI : document/7931613

[422] Sungjun Kim, Yao-Feng Chang,??Min-Hwi Kim, Byung-Gook Park, "Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x," Applied Physics Letters, Vol. 111, No. 3, pp. 033509, Jul. 2017 [SCI] DOI : 10.1063/1.4985268

[421] Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park, "Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory," Solid-State Electronics, Vol. 132, pp. 109-114, Jun. 2017 [SCI] DOI : 10.1016/j.sse.2017.03.015

[420] Hyungjin Kim, Myung-Hyun Baek, Sungmin Hwang, Jong-Ho Lee, and Byung-Gook Park, "Comparison of writing methods of single memory cell with volatile and nonvolatile memory functions," Applied Physics Express, Vol. 10, No. 6, p. 064201, Jun. 2017 [SCI] DOI : 10.7567/APEX.10.064201

[419] Jungjin Park, Min-Woo Kwon, Hyungjin Kim, Sungmin Hwang, Jeong-Jun Lee, and Byung-Gook Park, "Compact Neuromorphic System With Four-Terminal Si-Based Synaptic Devices for Spiking Neural Networks," IEEE Transactions on Electron Devices, Vol. 64, No. 5, pp. 2438-2444, May 2017 [SCI] DOI : 10.1109/TED.2017.2685519

[418] Min-Woo Kwon, Sungjun Kim, Min-Hwi Kim, Jungjin Park, Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, "Integrate-and-Fire (I&F) Neuron Circuit Using Resistive-Switching Random Access Memory (RRAM)," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 3038-3041, May 2017 [SCI] DOI : 10.1166/jnn.2017.14025

[417] Jungkyu Jang, Jungmok Kim, Seohyeon Kim, Hyun-Sun Mo, Dong Myung Kim, Sung-Jin Choi, Byung-Gook Park, Dae Hwan Kim, Jisun Park, "Analysis and Modeling on the pH-Dependent Current Drift of Si Nanowire Ion-Sensitive Field Effect Transistor (ISFET)-Based Biosensors," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 3146-3150, May 2017 [SCI] DOI : 10.1166/jnn.2017.14037

[416] Seohyeon Kim, Jungmok Kim, Jungkyu Jang, Hyun-Sun Mo, Dong Myong Kim, Sung-Jin Choi, Byung-Gook Park, Dae Hwan Kim, Jisun Park, "Sampling Time and pH-Dependences of Silicon Nanowire Ion-Sensitive Field-Effect Transistor-Based Biosensors," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 3257-3260, May 2017 [SCI] DOI : 10.1166/jnn.2017.14038

[415] Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, "Design Optimization of 1T Dynamic Random Access Memory Based on Pillar Type Tunneling Field-Effect Transistor with Surrounding Gate Structure," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 2906-2911, May 2017 [SCI] DOI : 10.1166/jnn.2017.14024

[414] Myung-Hyun Baek, Sang-Ho Lee, Dae Woong Kwon, Joo Yun Seo, and Byung-Gook Park, "Hole Trapping Phenomenon at the Grain Boundary of Thin Poly-Si Floating-Body MOSFET and Its Capacitor-Less DRAM Application," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 2986-2990, May 2017 [SCI] DOI : 10.1166/jnn.2017.14027

[413] Do-Bin Kim, Dae Woong Kwon, Wandong Kim, Byung-Gook Park, "Threshold Voltage Setting Method for Layer Selection by Multi-Level Operation in Channel Stacked NAND Flash Memory," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 3386-3389, May 2017 [SCI] DOI : 10.1166/jnn.2017.14043

[412] Jun-Mo Park, In-Tak Cho, Won-Mook Kang, Byung-Gook Park, and Jong-Ho Lee, "Method to Eliminate Gate and Drain Bias Stresses in Transfer Curves of WSe2 Field Effect Transistors with Single Channel Pulsed I?€?V Measurement," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, pp. 3382-3385, May 2017 [SCI] DOI : contentone/asp

[411] Jun-Mo Park, Jong-Ho Bae, Jai-Ho Eum, Sung-Hun Jin, Byung-Gook Park and Jong-Ho Lee, "High-Density Reconfigurable Devices with Programmable Bottom-Gate Array," IEEE Electron Device Letters, Vol. 38, No. 5, pp. 564-567, May 2017 [SCI] DOI : stamp/stamp.jsp?arnumber=7874125

[410] Sungjun Kim, Yao-Feng Chang,??Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim and Byung-Gook Park, "Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory," Materials, Vol. 10, No. 5, pp. 459-1-459-9, May 2017 [SCI] DOI : 10.339/ma10050459

[409] Yoon Kim, Il Han Park, Hui Tae Kwon, Daehoon Wee, Byung-Gook Park, "Three-dimensional AND flash memory," Electronics Letters, Vol. 53, No. 11, pp. 739-741, May 2017 [SCI] DOI : 10.1049/el.2017.0465

[408] Hyungjin Kim, Sungmin Hwang, Jong-Ho Lee and Byung-Gook Park, "Combination of volatile and non-volatile functions in a single memory cell and its scalability," Japanese Journal of Applied Physics, Vol. 56, No. 4S, p. 04CE06, Apr. 2017 [SCI] DOI : 10.7567/JJAP.56.04CE06

[407] Dae Woong Kwon, Byung-Gook Park, "Tunnel field-effect transistor with asymmetric gate dielectric and body thickness," Japanese Journal of Applied Physics, Vol. 56, No. 4, pp. 044201-1-044201-6, Apr. 2017 [SCI] DOI : article/10.7567

[406] Sungmin Hwang, Hyungjin Kim, Dae Woong Kwon, Jong-Ho Lee, and Byung-Gook Park, "Si1-xGex Positive Feedback Field-effect Transistor with Steep Subthreshold Swing for Low-voltage Operation," Journal of Semiconductor Technology and Science, Vol. 17, No. 2, pp. 216-222, Apr. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.2.216

[405] Min-Woo Kwon, Myung-Hyun Baek, Jungjin Park, Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, "CMOS Analog Integrate-and-fire Neuron Circuit for Driving Memristor based on RRAM," Journal of Semiconductor Technology and Science, Vol. 17, No. 2, pp. 174-179, Apr. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.2.174

[404] Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park, "Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory," Journal of Semiconductor Technology and Science, Vol. 17, No. 2, pp. 167-173, Apr. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.2.167

[403] Jungjin Park, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Jeong-Jun Lee, Taejin Jang, and Byung-Gook Park, "Implementation of Neuromorphic System with Si-based Floating-body Synaptic Transistors," Journal of Semiconductor Technology and Science, Vol. 17, No. 2, pp. 210-215, Apr. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.2.210

[402] Dae Woong Kwon, Hyun Woo Kim, Jang Hyun Kim, Euyhwan Park, Junil Lee, Wandong Kim, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, "Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures," IEEE Transactions on Electron Devices, Vol. 64, No. 4, pp. 1799-1805, Apr. 2017 [SCI] DOI : 10.1109/TED.2017.2669365

[401] Sungjun Kim, Yao-Feng Chang and Byung-Gook Park, "Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices," RSC Advances, Vol. 7, No. 29, pp. 17882-17888, Mar. 2017 [SCI] DOI : 10.1039/C6RA28477A

[400] Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park, "InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation," Optics Express, Vol. 25, No. 6, pp. 6440-6449, Mar. 2017 [SCI] DOI : 10.1364/OE.25.006440

[399] Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho and Byung-Gook Park, "Nano-cone resistive memory for ultralow power operation," Nanotechnology, Vol. 28, No. 12, pp. 125207-1-125207-7, Mar. 2017 [SCI] DOI : 10.1088/1361-6528

[398] Sungjun Kim, Byung-Gook Park, "Unipolar resistive switching characteristics of W/Si3N4/Si memory devices with doped silicon bottom electrodes," Current Applied Physics, Vol. 17, No. 2, pp. 146-151, Feb. 2017 [SCI] DOI : 10.1016/j.cap.2016.11.017

[397] Ryoongbin Lee, Dae Woong Kwon, Sihyun Kim, Dae Hwan Kim and Byung-Gook Park, "Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors," Journal of Semiconductor Technology and Science, Vol. 17, No. 1, pp. 141-146, Feb. 2017 [SCI] DOI : 10.5573/JSTS.2017.17.1.141

[396] Dae Woong Kwon, Jang Hyun Kim, and Byung-Gook Park, "The Effect of Drain Bias Stress on the Instability of Turned-off Amorphous HfInZnO Thin-Film Transistors Under Light Irradiation," IEEE Transactions on Electron Devices, Vol. 64, No. 1, Jan. 2017 [SCI] DOI : 10.1109/TED.2016.2624988

[395] Garam Kim, Min-Chul Sun, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency," Applied Physics Letters, Vol. 110, No. 2, pp. 021115-1-4, Jan. 2017 [SCI] DOI : 10.1063/1.4973995

[394] Sungjun Kim and Byung-Gook Park, "Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching," Journal of Physics D: Applied Physics, Vol. 50, No. 2, pp. 02LT01-1-02LT01-8, Jan. 2017 [SCI] DOI : 10.1088/1361-6463

[393] Seunghyun Kim, Sang-Ho Lee, Young-Goan Kim, Seongjae Cho and Byung-Gook Park, "Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory," Japanese Journal of Applied Physics, Vol. 56, No. 1, pp. 014302-1-014302-5, Jan. 2017 [SCI] DOI : 10.7567/JJAP.56.014302

[392] Jeongmin Lee, Il Hwan Cho, Dongsun Seo, Seongjae Cho, and Byung-Gook Park, "Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy," Journal of Semiconductor Technology and Science(JSTS), Vol. 16, No. 6, pp. 854-859, Dec. 2016 [SCI] DOI : 10.5573/JSTS.2016.16.6.854

[391] Dae Woong Kwon, Joo Yun Seo, Se Hwan Park, Wandong Kim, Do-Bin Kim, Sang-Ho Lee, Gyu Seong Cho, Sung-Kye Park, and Byung-Gook Park, "Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor," IEEE Electron Device Letters, Vol. 37, No. 11, pp. 1418-1421, Nov. 2016 [SCI] DOI : 10.1109/LED.2016.2611531

[390] Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, Byung-Gook Park, "Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure," Journal of Alloys and Compounds, Vol. 686, pp. 479-483, Nov. 2016 [SCI] DOI : 10.1016/j.jallcom.2016.06.055

[389] Sungtae Lee, In Tak Cho, Won-Mook Kang, Byung-Gook Park and Jong-Ho Lee, "Accurate extraction of WSe2 FETs parameters by using pulsed I-V method at various temperatures," Nano Convergence, Vol. 3, No. 1, pp. 31-35, Nov. 2016 [SCI] DOI : 10.1186/s40580-016-0091-9

[388] Hyungjin Kim, Seongjae Cho, Min-Chul Sun, Jungjin Park, Sungmin Hwang, and Byung-Gook Park, "Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity," Journal of Semiconductor Technology and Science, Vol. 16, No. 5, pp. 657-663, Oct. 2016 [SCI] DOI : 10.5573/JSTS.2016.16.5.657

[387] Myung-Hyun Baek, Jang Hyun Kim, Byung-Gook Park, "The Lowering of the Schottky Barrier Height Using an Ultrathin Interlayer to Reduce the Contact Resistance," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 10, pp. 10260-10263, Oct. 2016 [SCI] DOI : 10.1166/jnn.2016.13139

[386] Taehyung Park, Jang Hyun Kim, Hyun Woo Kim, Euyhwan Park, Junil Lee, Byung-Gook Park, "Capacitance?€?Voltage Characterization of Tunnel Field Effect Transistors with a Si/SiGe Heterojunction," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 10, pp. 10256-10259, Oct. 2016 [SCI] DOI : 10.1166/jnn.2016.13138

[385] Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 10, pp. 10247-10251, Oct. 2016 [SCI] DOI : 10.1166/jnn.2016.13136

[384] Dae Woong Kwon, Jang Hyun Kim, and Byung-Gook Park, "Effects of drain doping concentration on switching characteristics of tunnel field-effect transistor inverters," Japanese Journal of Applied Physics, Vol. 55, No. 11, pp. 114201-1-114201-5, Oct. 2016, [SCI] DOI : 10.7567/JJAP.55.114201

[383] Nag Yong Choi, Sung-Min Joe, Byung-Gook Park, And Jong-Ho Lee, "Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope," Journal of the Electron Devices Society, Vol. 4, No. 5, pp. 328-334, Sep. 2016 [SCI] DOI : 10.1109/JEDS.2016.2593792

[382] Dae Woong Kwon, Wandong Kim, Do-Bin Kim, Sang-Ho Lee, Joo Yun Seo, Eunseok Choi, Gyu Seog Cho, Sung-Kye Park, Jong-Ho Lee, and Byung-Gook Park, "Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory," IEEE Transactions on Electron Devices, Vol. 63, No. 9, pp. 3521-3526, Sep. 2016 [SCI] DOI : 10.1109/TED.2016.2593909

[381] Jun-Mo Park, In-Tak Cho, Won-Mook Kang, Byung-Gook Park, and Jong-Ho Lee, "Elimination of the gate and drain bias stresses in I?€?V characteristics of WSe2 FETs by using dual channel pulse measurement," Applied Physics Letters, Vol. 109, No. 5, pp. 053503-1-053503-4, Aug. 2016 [SCI] DOI : 10.1063/1.4960459

[380] Hyungjin Kim, and Byung-Gook Park, "A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure," Journal of the Korean Physical Society, Vol. 69, No. 3, pp. 323-327, Aug. 2016 [SCI] DOI : 10.3938/jkps.69.323

[379] Sungjun Kim and Byung-Gook Park, "Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory," Nanoscale Research Letters, Vol. 11, No. 360, pp. 360-1-360-8, Aug. 2016 [SCI] DOI : 10.1186/s11671-016-1572-9

[378] Hyungjin Kim, Jong-Ho Lee and Byung-Gook Park, "Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement," Applied Physics Express, Vol. 9, No. 8, p. 084201, Aug. 2016 [SCI] DOI : 10.7567/APEX.9.084201

[377] Sang-Ho Lee, Wandong Kim, Dae Woong Kwon, Joo Yun Seo, Myung Hyun Baek, Sungbok Lee, Jinkyu Kang, Woojae Jang, Jong-Ho Lee, and Byung-Gook Park, "Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory," IEEE Electron Device Letters, Vol. 37, No. 7, pp. 866-869, Jul. 2016 [SCI] DOI : 10.1109/LED.2016.2568171

[376] Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park, "Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells," Nanoscience and Nanotechnology Letters, Volume 8, Number 7, pp. 577-580, Jul. 2016 [SCI] DOI : 10.1166/nnl.2016.2036

[375] Sang Wan Kim, Min-Chul Sun, Euyhwan Park, Jang Hyun Kim, Dae Woong Kwon and Byung-Gook Park, "Improvement of current drivability in highscalable tunnel field-effect transistors with CMOS compatible self-aligned process," ELECTRONICS LETTERS, Vol. 52, No. 12, pp. 1071?€?1072, Jun. 2016 [SCI] DOI : 10.1049/el.2016.0707

[374] Dae Woong Kwon, Jang Hyun Kim, Wandong Kim, Sang Wan Kim, Jong-Ho Lee, and Byung-Gook Park, "Analysis on Trapping Kinetics of Stress-Induced Trapped Holes in Gate Dielectric of Amorphous HfInZnO TFT," IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp. 2398-2404, Jun. 2016 [SCI] DOI : 10.1109/TED.2016.2555332

[373] Dae Woong Kwon, Jang Hyun Kim, Euyhwan Park, Junil Lee, Taehyung Park, Ryoongbin Lee, Sihyun Kim, and Byung-Gook Park, "Reduction method of gate-to-drain capacitance by oxide spacer formation in tunnel field-effect transistor with elevated drain," Japanese Journal of Applied Physics, Vol. 55, No. 6S1, pp. 06GG04-1-06GG04-4, Jun. 2016 [SCI] DOI : 10.7567/JJAP.55.06GG04

[372] Junil Lee, Dae Woong Kwon, Hyun Woo Kim, Jang Hyun Kim, Euyhwan Park, Taehyung Park, Sihyun Kim, Ryoongbin Lee, Jong-Ho Lee, and Byung-Gook Park, "Analysis on temperature dependent current mechanism of tunnel field-effect transistors," Japanese Journal of Applied Physics, Vol. 55, No. 6S1, pp. 06GG03-1-06GG03-4, Jun. 2016 [SCI] DOI : 10.7567/JJAP.55.06GG03

[371] Sihyun Kim, Dae Woong Kwon, Ryoongbin Lee, Dae Hwan Kim, and Byung-Gook Park, "Investigation of drift effect on silicon nanowire field effect transistor based pH sensor," Japanese Journal of Applied Physics, Vol. 55, No. 6S1, pp. 06GG01-1-06GG01-4, Jun. 2016 [SCI] DOI : 10.7567/JJAP.55.06GG01

[370] Daewoong Kwon, Jung Han Lee, Sihyun Kim, Ryoongbin Lee, Hyunsun Mo, Jisun Park, Dae Hwan Kim, and Byung-Gook Park, "Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors," IEEE Electron Device Letters, Vol. 37, No. 5, pp. 652-655, May 2016 [SCI] DOI : 10.1109/LED.2016.2542846

[369] Sungjun Kim and Byung-Gook Park, "Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures," Applied Physics Letters, Vol. 108, No. 21, pp. 212103-1-212103-5, May 2016 [SCI] DOI : 10.1063/1.4952719

[368] Hyungjin Kim, Dae Woong Kwon, Min-Woo Kwon, Jungjin Park, and Byung-Gook Park, "Self-Boosted Tunnel Field-Effect Transistor Using Nitride Charge Trapping Layer for Low Supply Voltage Operation," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, pp. 5243-5246, May 2016 [SCI] DOI : 10.1166/jnn.2016.12235

[367] Hyoun Mo Choi, Dong Jae Shin, Jung Han Lee, Hyun-Sun Mo, Tae Jung Park, Byung-Gook Park, Dong Myong Kim, Sung-Jin Choi, Dae Hwan Kim, and Jisun Park, "The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, pp. 4901-4905, May 2016 [SCI] DOI : 10.1166/jnn.2016.12247

[366] Junil Lee, Jang Hyun Kim, Dae Woong Kwon, Euyhwan Park, Taehyung Park, Hyun Woo Kim, and Byung-Gook Park, "Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-K/Metal Gate Using Oxygen Scavenging Process," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, pp. 4897-4900, May 2016 [SCI] DOI : 10.1166/jnn.2016.12236

[365] Jungjin Park, Min-Woo Kwon, Hyungjin Kim, and Byung-Gook Park, "Neuromorphic System Based on CMOS Inverters and Si-Based Synaptic Device," Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, pp. 4709-4712, May 2016 [SCI] DOI : 10.1166/jnn.2016.12234

[364] Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park, "Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell," IEICE TRANSACTIONS on Electronics, Vol. E99-C, No. 5, pp. 547-550, May 2016, [SCI] DOI : 10.1587/transele.E99.C.547

[363] Sung-Min Joe, Ho-Jung Kang, Nagyong Choi, Myounggon Kang, Byung-Gook Park, and Jong-Ho Lee, "Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback," IEEE Transactions on Electron Devices, Vol. 63, No. 4, Apr. 2016, [SCI] DOI : 10.1109/TED.2016.2533019

[362] Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device," Journal of Semiconductor Technology and Science, Vol. 16, No. 2, pp. 147-152, Apr. 2016 [SCI] DOI : 10.5573/JSTS.2016.16.2.147

[361] Sungjun Kim and Byung-Gook Park, "Tuning tunnel barrier in Si3N4-based resistive memory embedding SiO2 for low-power and high-density cross-point array applications," Journal of Alloys and Compounds, Vol. 663, pp. 419-423, Apr. 2016 [SCI] DOI : 10.1016/j.jallcom.2015.12.107

[360] Sungjun Kim, Hyungjin Kim, Sunghun Jung, Min-Hwi Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park, "Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications," Journal of Alloys and Compounds, Vol. 663, pp. 256-261, Apr. 2016 [SCI] DOI : 10.1016/j.jallcom.2015.10.142

[359] Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, and Byung-Gook Park, "Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure," Japanese Journal of Applied Physics, Vol. 55, No. 4S , p. 04ED01, Apr. 2016 [SCI] DOI : 10.7567/JJAP.55.04ED01

[358] Sang Wan Kim, Jang Hyun Kim, Tsu-Jae King Liu, Woo Young Choi, and Byung-Gook Park, "Demonstration of L-Shaped Tunnel Field-Effect Transistors," IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1774-1778, Apr. 2016 [SCI] DOI : 10.1109/TED.2015.2472496

[357] Dae Woong Kwon, Wandong Kim, Do-Bin Kim, Sang-Ho Lee, Joo Yun Seo, Myung-Hyun Baek, Ji-Ho Park, Eunseok Choi, Gyu Seong Cho, Sung-Kye Park, Jong-Ho Lee, and Byung-Gook Park, "Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation," IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp. 1041-1046, Mar. 2016 [SCI] DOI : 10.1109/TED.2016.2517336

[356] Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Jong-Ho Lee, and Byung-Gook Park, "Silicon-Based floating-body synaptic transistor with frequency-dependent short- and long-term memories," IEEE Electron Device Letters, Vol. 37, No. 3, pp. 249-252, Mar. 2016 [SCI] DOI : 10.1109/LED.2016.2521863

[355] Sungjun Kim, Seongjae Cho, and Byung-Gook Park, "Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer," Journal of Vacuum Science & Technology B, Vol. 34, No. 2, pp. 022204-1-022204-5, Mar. 2016 [SCI] DOI : 10.1116/1.494356

[354] Sungjun Kim,  Seongjae Cho, and  Byung-Gook Park, "Fully Si compatible SiN resistive switching memory with large self-rectification ratio,"AIP Advances, Vol. 6, No. 1 , pp. 015021-, Jan. 2016 [SCI] DOI : 10.1063/1.4941364

[353] Dae Woong Kwon, Wandong Kim, Do-Bin Kim, Sang-Ho Lee, Joo Yun Seo, Myung-Hyun Baek, Ji-Ho Park, Eunseok Choi, Gyu Seong Cho, and Byung-Gook Park, "Multi-Level threshold voltage setting method of String select transistors for layer selection inChannel stacked NAND flash memory,"IEEE Electron Device Letters, Vol. 36, No. 12, pp. 1318-1320, Dec. 2015 [SCI] DOI : 10.1109/LED.2015.2491367

[352] Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park, "Gradual bipolar resistive switching in Ni/Si3N4/n+ -Si resistive-switching memory device for high-density integration and low-power applications," Solid-State Electronics, Vol. 114, No. 21, pp. 94-97, Dec. 2015 [SCI] DOI : 10.1016/j.sse.2015.08.003

[351] Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "Integrate-and-Fire neuron circuit and synaptic device using floating body MOSFET with spike timing- dependent plasticity," Journal of Semiconductor Technology and Science, Vol. 15, No. 6, pp. 658-663, Dec. 2015 [SCI] DOI : 10.5573/JSTS.2015.15.6.658

[350] Sungjun Kim, Seongjae Cho, Kyung-Chang Ryoo, and Byung-Gook Park, "Effects of conducting defects on resistive switching characteristics of SiNx -based resistive random-access memory with MIS structure," Journal of Vacuum Science & Technology B, Vol. 33, No. 6, pp. 062201-1-062201-6, Nov. 2015 [SCI] DOI : 10.1116/1.4931946

[349] Jun-Mo Park, Dongho Lee, Jeoyoung Shim, Taehan Jeon, Kunsun Eom, Byung-Gook Park, and Jong-Ho Lee, "Analysis and suppression of drain current drift in graphene FETs," Semiconductor Science and Technology, Vol. 30, No. 10 , pp. 105013-1-105013-6, Aug. 2015 [SCI] DOI : 10.1088/0268-1242

[348] Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park, "Effects of Gate/Blocking oxide energy barrier on memory characteristics in charge trap flash memory cells," Nanoscience and Nanotechnology Letters, Vol. 7, No. 7, pp. 594-598, Jul. 2015 [SCI] DOI : 10.1166/nnl.2015.2002

[347] Sunhae Shin, Esan Jang, Jae Won Jeong, Byung-Gook Park, and Kyung Rok Kim, "Compact design of low power standard ternary inverter based on OFF-state current mechanism using nano-CMOS technology," IEEE Transactions on Electron Devices, Vol. 62, No. 8, pp. 2396-2403, Jul. 2015 [SCI] DOI : 10.1109/TED.2015.2445823

[346] Yoon Kim, Won Bo Shim, and Byung-Gook Park, "Gated twin-bit silicon?€?oxide?€?nitride?€?oxide?€?silicon NAND flash memory for high-density nonvolatile memory," Japanese Journal of Applied Physics, Vol. 54, No. 6, pp. 064201-, Jun. 2015 [SCI] DOI : 10.7567/JJAP.54.064201

[345] Min-Kyu Jeong, Ho-Jung Kang, Sung-Min Joe, Sung-Kye Park, Byung-Gook Park, and Jong-Ho Lee, "Trap profiling in nitride storage layer in 3-D NAND flash memory using retention characteristics and AC-gm method," IEEE Electron Device Letters, Vol. 36, No. 6, pp. 561-563, Jun. 2015 [SCI] DOI : 10.1109/LED.2015.2419277

[344] Rajeev Ranjan, Min-Woo Kwon, Jungjin Park, Hyungjin Kim, and Byung-Gook Park, "Neuron circuit using a thyristor and inter-neuron connection with synaptic devices," Journal of Semiconductor Technology and Science, Vol. 15, No. 3, pp. 365-373, Jun. 2015 [SCI] DOI : 10.5573/JSTS.2015.15.3.365

[343] Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park, "Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications," Applied Physics Letters, Vol. 106, No. 21, pp. 212106-1-212106-4, May 2015 [SCI] DOI : 10.1063/1.4921926

[342] Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park, "Resistive switching characteristics of silicon nitride-based RRAM depending on top electrode metals," IEICE Transactions on Electronics, Vol. E98-C, No. 5, pp. 429-433, May 2015 [SCI] DOI : 10.1587/transele.E98.C.429

[341] Jang Hyun Kim, Sang Wan Kim, Hyun Woo Kim, and Byung-Gook Park, "Vertical type double gate tunnelling FETs with thin tunnel barrier," Electronics Letters, Vol. 51, No. 9, pp. 718-720, Apr. 2015 [SCI] DOI : 10.1049/el.2014.3864

[340] Myoung-Sun Lee, Ju-Wan Lee, Chang-Hee Kim, Byung-Gook Park, and Jong-Ho Lee, "Implementation of short-term plasticity and long-term potentiation in a synapse using Si-based type of charge-trap memory," IEEE Transactions on Electron Devices, Vol. 62, No. 2, pp. 569-573, Feb. 2015 [SCI] DOI : 10.1109/TED.2014.2378758

[339] Jang Hyun Kim, Garam Kim, Euyhwan Park, Dong Hoon Kang, and Byung-Gook Park, "Effects of current spreading in GaN-based lightemitting," Journal of Semiconductor Technology and Science, Vol. 15, No. 1, pp. 114-121, Feb. 2015 [SCI] DOI : 10.5573/JSTS.2015.15.1.114

[338] Ho-Jung Kang, Sung-Ho Bae, Min-Kyu Jeong, , Byung-Gook Park, and Jong-Ho Lee, "Extraction of interface trap density in the region between adjacent wordlines in NAND flash memory strings," IEEE Electron Device Letters, Vol. 36, No. 1, pp. 53-55, Jan. 2015 [SCI] DOI : 10.1109/LED.2014.2367025

[337] Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "integrate-and-fire neuron circuit and synaptic device with floating body MOSFETs," Journal of Semiconductor Technology and Science, Vol. 14, No. 6, pp. 755-759, Dec. 2014 [SCI] DOI : 10.5573/JSTS.2014.14.6.755

[336] Jun-Mo Park, Honggu Chun, Y. Eugene Pak, Byung-Gook Park, and Jong-Ho Lee, "Parameter modeling for nanopore ionic field effect transistors in 3-D device simulation," Journal of Nanoscience and Nanotechnology, Vol. 14, No. 11, pp. 8171-8175, Nov. 2014 [SCI] DOI : 10.1166/jnn.2014.9906

[335] Xiaochi Chen, Yijie Huo, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr., "Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology," IEIE Transactions on Smart Processing and Computing, Vol. 3, No. 5, pp. 331-337, Oct. 2014 [SCI] DOI : 10.5573/ieiespc.2014.3.5.331

[334] Ho-Jung Kang, Min-Kyu Jeong, Sung-Min Joe, Byung-Gook Park, and Jong-Ho Lee, "Characterization of random telegraph noise generated in the space region in NAND flash memory strings," Semiconductor Science and Technology, Vol. 29, No. 12, pp. 125001-, Oct. 2014 [SCI] DOI : 10.1088/0268-1242

[333] Yoon Kim, Joo Yun Seo, Sang-Ho Lee, and Byung-Gook Park, "A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory," Journal of Semiconductor Technology and Science, Vol. 14, No. 5, pp. 566-571, Oct. 2014 [SCI] DOI : 10.5573/JSTS.2014.14.5.566

[332] Garam Kim, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "Reduction of curent crowding in InGaN-based blue light-emiting diodes by modifying metal contact geometry," Journal of Semiconductor Technology and Science, Vol. 14, No. 5, pp. 588-593, Oct. 2014 [SCI] DOI : 10.5573/JSTS.2014.14.5.588

[331] Hyun Woo Kim, Jong Pil Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Jang Hyun Kim, Euyhwan Park, Hyungjin Kim, and Byung-Gook Park, "Schottky barrier tunnel field-efect transistor using spacer technique," Journal of Semiconductor Technology and Science, Vol. 14, No. 5, pp. 572-578, Oct. 2014 [SCI] DOI : 10.5573/JSTS.2014.14.5.572

[330] Garam Kim, Sang Wan Kim, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "Effects of periodic trench structure on the cathodo-luminescence in InGaN/GaN multi-quantum-wells," Electronics Letters, Vol. 50, No. 14, pp. 1012-1014, Jul. 2014 [SCI] DOI : 10.1049/el.2014.1567

[329] Jun-Mo Park, Dongho Lee, Jeoyoung Shim, Taehan Jeon, Kunsun Eom, Byung-Gook Park, and Jong-Ho Lee, "Pulsed I ?€?V measurement method to obtain hysteresis-free characteristics of graphene FETs," Semiconductor Science and Technology, Vol. 29, No. 9, pp. 1-6, Jul. 2014 [SCI] DOI : 10.1088/0268-1242

[328] Joo Yun Seo, Yoon kim, and Byung-Gook Park, "New program inhibition scheme for high boosting efficiency in three-dimensional NAND array," Japanese Journal of Applied Physics: Rapid Communications, Vol. 53, No. 7, pp. 070304-1-070304-3, Jun. 2014 [SCI] DOI : 10.7567/JJAP.53.070304

[327] Garam Kim, Euyhwan Park, Jang Hyun Kim, Jong-Ho Bae, Dong hoon Kang, and Byung-Gook Park, "Analysis of trap and its impact on InGaN-based blue light-emitting diodes using current-transient methodology," Japanese Journal of Applied Physics: Regular Papers, Vol. 53, No. 6, pp. 062101-1-062101-5, May 2014 [SCI] DOI : 10.7567/JJAP.53.062101

[326] Garam Kim, Jang Hyun Kim, Euyhwan Park, Donghoon-Kang, and Byung-Gook Park, "Improved internal quantum ef???ciency of GaN-based light emitting diodes using p-AlGaN trench in multi-quantum well," Japanese Journal of Applied Physics: Regular Papers, Vol. 53, No. 6S, pp. 06JE14-1-06JE14-4, May 2014 [SCI] DOI : 10.7567/JJAP.53.06JE14

[325] Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Euyhwan Park, and Byung-Gook Park, "Tunneling field-effect transistor with Si/SiGe material for high current drivability," Japanese Journal of Applied Physics: Regular Papers, Vol. 53, No. 6S, pp. 06JE12-1-06JE12-4, May 2014 [SCI] DOI : 10.7567/JJAP.53.06JE12

[324] Min-Chul Sun, Hyun Woo Kim, Hyungjin Kim, Sang Wan Kim, Garam Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "VT-Modulation of planar tunnel field-effect transistors with ground-plane under ultrathin body and bottom oxide," Journal of Semiconductor Technology and Science, Vol. 14, No. 2, pp. 139-145, Apr. 2014 [SCI] DOI : 10.5573/JSTS.2014.14.2.139

[323] Sunghun Jung, Sungjun Kim, Jeong-Hoon Oh, Kyung-Chang Ryoo, and Byung-Gook Park, "Analysis of conduction mechanism in silicon nitride-based RRAM," International Journal of Nanotechnology, Vol. 11, No. 17, pp. 167-177, Mar. 2014 [SCI] DOI : 10.1504/IJNT.2014.059820

[322] Joo Yun Seo, Sang-Ho Lee, Se Hwan Park, Wandong Kim, Do-Bin Kim, and Byung-Gook Park, "Characteristics of gate-all-around polycrystalline silicon channel SONOS flash memory," International Journal of Nanotechnology, Vol. 11, No. 12, pp. 116-125, Mar. 2014 [SCI] DOI : 10.1504/IJNT.2014.059815

[321] Sungjun Kim, Sunghun Jung, and Byung-Gook Park, "Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure," International Journal of Nanotechnology, Vol. 11, No. 13, pp. 126-134, Mar. 2014 [SCI] DOI : 10.1109/INEC.2013.6466030

[320] Seongjae Cho, Sunghun Jung, Sungjun Kim, and Byung-Gook Park, "Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its oepration scheme for faster access," IEICE Electronics Express, Vol. 11, No. 4, pp. 1-10, Feb. 2014 [SCI] DOI : 10.1587/elex.11.20131041

[319] Seongjae Cho, Joonsuk Park, Hyungjin Kim, Robert Sinclair, Byung-Gook Park, and James S. Harris Jr., "Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits," Photonics and Nanostructures - Fundamentals and Applications (PNFA), Vol. 12, No. 1, pp. 54-68, Feb. 2014 [SCI] DOI : 10.1016/j.photonics.2013.07.012

[318] Byeong-In Choe, Jung-Kyu Lee, Byung-Gook Park, and Jong-Ho Lee, "Suppression of read disturb fail caused by boosting hot carrier injection effect for 3-D stack NAND flash memories," IEEE Electron Device Letters, Vol. 35, No. 1, pp. 42-44, Jan. 2014 [SCI] DOI : 10.1109/LED.2013.2288991

[317] Garam Kim, Jang Hyun Kim, Euyhwan Park, Donghoon Kang, and Byung-Gook Park, "Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region," Optics Express, Vol. 22, No. 2, pp. 1235-1242, Jan. 2014 [SCI] DOI : 10.1364/OE.22.001235

[316] Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, and James S. Harris, Jr., "Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application," Applied Physics Letters, Vol. 103, No. 22, pp. 222102-1-222102-4, Dec. 2013 [SCI] DOI : 10.1063/1.4833295

[315] Min-Chul Sun, Garam Kim, Jung Han Lee, Hyungjin Kim, Sang Wan Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology," Microelectronic Engineering, Vol. 110, pp. 141-146, Oct. 2013 [SCI] DOI : 10.1016/j.mee.2013.03.023

[314] Sang Wan Kim, Woo Young Choi, Min-Chul Sun, and Byung-Gook Park, "Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method," Journal of Nanoscience and Nanotechnology, Vol. 13, No. 9, pp. 6376-6381, Sep. 2013 [SCI] DOI : 10.1166/jnn.2013.7609

[313] Byeong-In Choe, Byung-Gook Park, Jung-Kyu Lee, and Jong-Ho Lee, "Suppression of inhibit cell vth disturbance in three dimensional stack NAND flash memory," Journal of Nanoscience and Nanotechnology, Vol. 13, No. 9, pp. 6382-6388, Sep. 2013 [SCI] DOI : 10.1166/jnn.2013.7623

[312] Jang Hyun Kim, Garam Kim, Euyhwan Park, and Byung-Gook Park, "Analysis of the internal quantum e???ciency of gallium-nitride-based light-emitting diodes from the transient electro-luminescence characteristics," Journal of the Korean Physical Society, Vol. 63, No. 3, pp. 1186-1188, Sep. 2013 [SCI] DOI : 10.3938/jkps.63.1186

[311] Yoon Kim, Myounggon Kang, Se Hwan Park, and Byung-Gook Park, "Three-Dimensional NAND flash memory based on single-crystalline channel stacked array," IEEE Electron Device Letters, Vol. 34, No. 8, pp. 990-992, Aug. 2013 [SCI] DOI : 10.1109/LED.2013.2262174

[310] Byeong-In Choe, Byung-Gook Park, and Jong-Ho Lee, "Body doping profile of select device to minimize program Disturbance in three-dimensional stack NAND flash memory," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 6S, pp. 06GE02-1-06GE02-6, Jun. 2013 [SCI] DOI : 10.7567/JJAP.52.06GE02

[309] Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Complementary-metal-oxide-semiconductor technology-compatible tunneling field-effect transistors with 14nm gate, sigma-shape source, and recessed channel," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 6, pp. 06GE06-1-06GE06-5, Jun. 2013 [SCI] DOI : 10.7567/JJAP.52.06GE06

[308] Euyhwan Park, Garam Kim, Wandong Kim, Jang Hyun Kim, Donghoon Kang, Joong-Kon Son, and Byung-Gook Park, "Enhancement of radiative recombination by different indium composition of multiple quantum barriers in GaN-based light-emitting diodes," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 6S, pp. 06GE04-1-06GE04-5, Jun. 2013 [SCI] DOI : 10.7567/JJAP.52.06GE04

[307] Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "L-Shaped tunneling field-effect transistors for complementary logic applications," IEICE Transactions on Electronics, Vol. E96-C, No. 5, pp. 634-638, May 2013 [SCI] DOI : 10.1587/transele.E96.C.634

[306] Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Novel tunneling field-effect transistor with sigma-shape embedded SiGe sources and recessed channel," IEICE Transactions on Electronics, Vol. E96-C, No. 5, pp. 639-643, May 2013 [SCI] DOI : 10.1587/transele.E96.C.639

[305] Byung-Kil Choi, Min-Kyu Jeong, Hyuck-In Kwon, Byung-Gook Park, and Jong-Ho Lee, "Current Voltage model of bulk fin field-effect transistors with a half-circle corner," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 6R, pp. 064202-1-064202-8, May 2013 [SCI] DOI : 10.7567/JJAP.52.064202

[304] Bong-Su Jo, Ho-Jung Kang, Sung-Min Joe, Min-Kyu Jeong, Kyung-Rok Han, Sung-Kye Park, Byung-Gook Park, and Jong-Ho Lee, "Characterization of random telegraph noise generated by process- and cycling- stress-induced traps in 26nm NAND flash memory," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 4S, pp. 04CA07-1-04CA07-4, Apr. 2013 [SCI] DOI : 10.7567/JJAP.52.04CA07

[303] Yung Jun Yoon, Seongjae Cho, Jae Hwa Seo, In Man Kang, Byung-Gook Park, and Jung-Hee Lee, "Compound semiconductor tunneling field-effect transistor based on Ge/GaAs heterojunction with tunneling-boost layer for high-performance operation," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 4, pp. 04CC04-1-04CC04-5, Apr. 2013 [SCI] DOI : 10.7567/JJAP.52.04CC04

[302] Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., "Mixed-Mode simulation of nanowire Ge/GaAs heterojunction tunneling field-effect transistor for circuit applications," IEEE Journal of the Electron Devices Society, Vol. 1, No. 2, pp. 48-53, Feb. 2013 [SCI] DOI : 10.1109/JEDS.2013.2256458

[301] Jung-Kyu Lee, Sunghun Jung, Byeong-In Choe, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Chan Hyeong Park, Byung-Gook Park, and Jong-Ho Lee, "Flicker noise behavior in resistive memory devices with double-layered transition metal oxide," IEEE Electron Device Letters, Vol. 34, No. 2, pp. 244-246, Feb. 2013 [SCI] DOI : 10.1109/LED.2012.2235401

[300] Hyun Woo Kim, Min-Chul Sun, Jung Han Lee, and Byung-Gook Park, "Investigation on suppression of nickel-silicide formation By fluorocarbon reactive ion etch (RIE) and plasma-enhanced deposition," Journal of Semiconductor Technology and Science, Vol. 13, No. 1, pp. 22-27, Feb. 2013 [SCI] DOI : 10.5573/JSTS.2013.13.1.022

[299] Jieun Lee, Jin-Moo Lee, Jung Han Lee, Mihee Uhm, Won Hee Lee, Seonwook Hwang, In-Young Chung, Byung-Gook Park, Dong Myong Kim, Yong-Joo Jeong, and Dae Hwan Kim, "SiNW-CMOS hybrid common-source amplifier as a voltage-readout hydrogen ion sensor," IEEE Electron Device Letters, Vol. 34, No. 1, pp. 135-137, Jan. 2013 [SCI] DOI : 10.1109/LED.2012.2226136

[298] Jieun Lee, Jin-Moo Lee, Jung Han Lee, Won Hee Lee, Mihee Uhm, Byung-Gook Park, Dong Myong Kim, Yong-Joo Jeong, and Dae Hwan Kim, "Complementary silicon nanowire hydrogen ion sensor with high sensitivity and voltage output," IEEE Electron Device Letters, Vol. 33, No. 12, pp. 1768-1770, Dec. 2012 [SCI] DOI : 10.1109/LED.2012.2220515

[297] Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, and Byung-Gook Park, "Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory," Solid-State Electronics, Vol. 78, pp. 34-38, Dec. 2012 [SCI] DOI : 10.1016/j.sse.2012.05.031

[296] Myoung-Sun Lee, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee, "Characteristics of elliptical gate-all-around SONOS nanowire with effective circular radius," IEEE Electron Device Letters, Vol. 33, No. 11, pp. 1613-1615, Nov. 2012 [SCI] DOI : 10.1109/LED.2012.2215303

[295] Sang Wan Kim, Chang-Su Seo, Yu-Kyung Park, Sang-Yeop Jee, Yun-Bin Kim, Suk-Jin Jung, , Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park, and Cheol Seong Hwang, Vol. 49, No. 10, pp. 496-506, Oct. 2012 [SCI] DOI : Journal/ArticleDetail

[294] Jung-Kyu Lee, Sunghun Jung, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il Hwan Cho, Hyuck-In Kwon, Byung-Gook Park, and Jong-Ho Lee, "Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices," Applied Physics Letters, Vol. 101, No. 10, pp. 103506-103506-4, Sep. 2012 [SCI] DOI : 10.1063/1.4751248

[293] Myoung-Sun Lee, Sung-Min Joe, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park, Sang-Sik Park, and Jong-Ho Lee, "A subthreshold slope and low-frequency noise characteristics in charge trap flash memories with gate-all-around and planar structure," Journal of Semiconductor Technology and Science, Vol. 12, No. 3, pp. 360-369, Sep. 2012 [SCI] DOI : Journal/ArticleDetail

[292] Seongjae Cho, Hyungjin Kim, Min-Chul Sun, Byung-Gook Park, and James S. Harris, Jr., "Process considerations for 80-GHz high-performance p-i-n silicon photodetector for optical interconnect," Journal of Semiconductor Technology and Science, Vol. 12, No. 3, pp. 370-376, Sep. 2012 [SCI] DOI : 10.5573/JSTS.2012.12.3.370

[291] Myounggon Kang, Il Han Park, Ik Joon Chang, Kyunghwan Lee, Seongjun Seo, Byung-Gook Park, and Hyungcheol Shin, "An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm NAND flash technologies," IEEE Electron Device Letters, Vol. 33, No. 8, pp. 1114-1116, Aug. 2012 [SCI] DOI : 10.1109/LED.2012.2201442

[290] Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Euyhwan Park, Hyungjin Kim, Kyung Wan Kim, and Byung-Gook Park, "A novel fabrication method for the nanoscale tunneling field effect transistor," Journal of Nanoscience and Nanotechnology, Vol. 12, No. 5, pp. 5592-5597, Jul. 2012 [SCI] DOI : 10.1166/jnn.2012.6261

[289] Min-Chul Sun, Garam Kim, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Co-Integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology," Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, pp. 5313-5317, Jul. 2012 [SCI] DOI : 10.1166/jnn.2012.6226

[288] Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, "Dimensional effect of non-polar resistive random access memory (RRAM) for low-power memory application," Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, pp. 5270-5275, Jul. 2012 [SCI] DOI : 10.1166/jnn.2012.6233

[287] Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, "Interface-Modified unipolar resistive random access memory (RRAM) structure for low-power application," Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, pp. 5263-5269, Jul. 2012 [SCI] DOI : 10.1166/jnn.2012.6234

[286] Seongjae Cho, Byung-Gook Park, Changjae Yang, Stanley Cheung, Euijoon Yoon, Theodore I. Kamins, S. J. Ben Yoo, and James S. Harris, Jr., "Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by ??-valley transport," Optics Express, Vol. 20, No. 14, pp. 14921-14927, Jul. 2012 [SCI] DOI : 10.1364/OE.20.014921

[285] Jae Sung Lee, Seongjae Cho, Byung-Gook Park, James S. Harris, Jr., and In Man Kang, "Small-Signal modeling of gate-all-around (GAA) junctionless (JL) MOSFETs for sub-millimeter wave applications," Journal of Semiconductor Technology and Science, Vol. 12, No. 2, pp. 230-239, Jun. 2012 [SCI] DOI : 10.5573/JSTS.2012.12.2.230

[284] Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, and Byung-Gook Park, "Design guideline of Si-based L-shaped tunneling field-effect transistors," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 6, pp. 06FE09-1-06FE09-4, Jun. 2012 [SCI] DOI : 10.1143/JJAP.51.06FE09

[283] Kyung-Chang Ryoo, Sungjun Kim, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, "Novel protruded-shape unipolar resistive random access memory structure for improving switching uniformity through excellent conductive filament controllability," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 6, pp. 06FE06-1-06FE06-5, Jun. 2012 [SCI] DOI : 10.1143/JJAP.51.06FE06

[282] Wandong Kim, Yoon Kim, Se Hwan Park, Joo Yun Seo, Do-Bin Kim, and Byung-Gook Park, "Variation of threshold voltage and ON-cell current caused by cell gate length fluctuation in virtual Source/Drain NAND flash memory," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 7, pp. 074301-1-074301-6, Jun. 2012 [SCI] DOI : 10.1143/JJAP.51.074301

[281] Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., "Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance," IEICE Electronics Express, Vol. 9, No. 9, pp. 828-833, May 2012 [SCI] DOI : 10.1587/elex.9.828

[280] Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, and Byung-Gook Park, "Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors," IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 826-830, May 2012 [SCI] DOI : 10.1587/transele.E95.C.826

[279] Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hyungjin Kim, and Byung-Gook Park, "Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics," IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 842-846, May 2012 [SCI] DOI : 10.1587/transele.E95.C.842

[278] Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, and Byung-Gook Park, "Novel three dimensional (3D) NAND flash memory array having tied bit-line and ground select transistor (TiGer)," IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 837-841, May 2012 [SCI] DOI : 10.1587/transele.E95.C.837

[277] Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, and Byung-Gook Park, "Study on threshold voltage control of tunnel field-effect transistors using VT-control doping region," IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 820-825, May 2012 [SCI] DOI : 10.1587/transele.E95.C.820

[276] Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, "Areal and structural effects on oxide-based resistive random access memory cell for improving resistive switching characteristics," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 4, pp. 04DD14-1-04DD14-5, Apr. 2012 [SCI] DOI : 10.1143/JJAP.51.04DD14

[275] Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 4, pp. 04DC03-1-04DC03-5, Apr. 2012 [SCI] DOI : 10.1143/JJAP.51.04DC03

[274] Jeong-Hoon Oh, Kyung-Chang Ryoo, Sunghun Jung, Yongjik Park, and Byung-Gook Park, "Effect of oxidation amount on gradual switching behavior in reset transition of Al/TiO2-based resistive switching memory and its mechanism for multilevel cell operation," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 4, pp. 04DD16-1-04DD16-5, Apr. 2012 [SCI] DOI : 10.1143/JJAP.51.04DD16

[273] Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, "Reset current reduction with excellent filament controllability by using area minimized and field enhanced unipolar resistive random access memory structure," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 4, pp. 04DD07-1-04DD07-6, Apr. 2012 [SCI] DOI : 10.1143/JJAP.51.04DD07

[272] Myounggon Kang, Kyunghwan Lee, Dong-Hyuk Chae, Byung-Gook Park, and Hyungcheol Shin, "The compact modeling of channel potential in sub-30-nm NAND flash cell string," IEEE Electron Device Letters, Vol. 33, No. 3, pp. 321-323, Mar. 2012 [SCI] DOI : 10.1109/LED.2011.2179283

[271] Won Bo Shim, Seongjae Cho, Jung Hoon Lee, Dong Hua Li, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Se Hwan Park, Wandong Kim, Jungdal Choi, and Byung-Gook Park, "Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory," IEEE Transactions on Nanotechnology, Vol. 11, No. 2, pp. 307-313, Mar. 2012 [SCI] DOI : 10.1109/TNANO.2011.2172217

[270] In-Tak Cho, Ju-Wan Lee, Jun-Mo Park, Woo-Seok Cheong, Chi-Sun Hwang, Il-Hwan Cho, Hyuck-In Kwon, Hyungcheol Shin, Byung-Gook Park, and Jong-Ho Lee, "Full-Swing a-IGZO inverter with a depletion load using negative bias instability under light illumination," IEEE Electron Device Letters, Vol. , No. , pp. -, Jan. 2012 [SCI] DOI : 10.1109/LED.2012.2221454

[269] Yoon Kim, Jang-Gn Yun, Se Hwan Park, Wandong Kim, Joo Yun Seo, Myounggon Kang, Kyung-Chang Ryoo, Jeong-Hoon Oh, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Three-Dimensional NAND Flash Architecture Design Based on Single-Crystalline STacked ARray," IEEE Transactions on Electron Devices, Vol. 59, No. 1, pp. 35-45, Jan. 2012 [SCI] DOI : 10.1109/TED.2011.2170841

[268] Dong Hua Li, Yoon Kim, Doo-Hyun Kim, Gil Sung Lee, and Byung-Gook Park, "Comparative Analysis of Trap-Based Progrom/Erase Behaviors with Different Tunnel Barriers," Journal of Nanoscience and Nanotechnology, Vol. 11, No. 12, pp. 10535-10538, Dec. 2011 [SCI] DOI : 10.1166/jnn.2011.3968

[267] Hyeri Jang, Jieun Lee, , Sungmin Seo, Byung-Gook Park, Dong Myong Kim, Dae Hwan Kim, and In-Young Chung, "Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment," Applied Physics Letters, Vol. 99, No. 12, pp. 252103-1-252103-3, Dec. 2011 [SCI] DOI : 10.1063/1.3669409

[266] Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation," Applied Physics Letters, Vol. 99, No. 24, pp. 243505-1-243505-4, Dec. 2011 [SCI] DOI : 10.1063/1.3670325

[265] Seongjae Cho, Jae Sung Lee, Kyung Rok Kim, Byung-Gook Park, James S. Harris, Jr., and In Man Kang, "Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors," IEEE Transactions on Electron Devices, Vol. 58, No. 12, pp. 4164-4171, Dec. 2011 [SCI] DOI : 10.1109/TED.2011.2167335

[264] Min-Kyu Jeong, Sung-Min Joe, Hyungcheol Shin, Byung-Gook Park, and Jong-Ho Lee, "High-Density three-dimensional stacked NAND flash with common gate structure and shield layer," IEEE Transactions on Electron Devices, Vol. 58, No. 12, pp. 4212-4218, Dec. 2011 [SCI] DOI : 10.1109/TED.2011.2168229

[263] Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vuckovic, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range," IEEE Photonics Technology Letters, Vol. 23, No. 20, pp. 1535-1537, Oct. 2011 [SCI] DOI : 10.1109/LPT.2011.2163929

[262] Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung-Gook Park, and Hyungcheol Shin, "DIBL-Induced program disturb characteristics in 32-nm NAND flash memory array," IEEE Transactions on Electron Devices, Vol. 58, No. 10, pp. 3626-3629, Oct. 2011 [SCI] DOI : 10.1109/TED.2011.2161313

[261] Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park, "Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application," Solid-State Electronics, Vol. 64, No. 1, pp. 42-46, Oct. 2011 [SCI] DOI : 10.1016/j.sse.2011.07.003

[260] Jieun Lee, Jung Han Lee, In-Young Chung, Chang-Joon Kim, Byung-Gook Park, Dong Myong Kim, and Dae Hwan Kim, "Comparative Study on Energy-Efficiencies of Single-Electron Transistor-Based Binary Full Adders Including Nonideal Effects," IEEE Transactions on Nanotechnology, Vol. 10, No. 5, pp. 1180-1190, Sep. 2011 [SCI] DOI : 10.1109/TNANO.2011.2125799

[259] Jaehong Lee, Jongwook Jeon, Junsoo Kim, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "Experimental investigation of quasi-ballistic carrier transport characteristics in 10-nm scale MOSFETs," IEEE Transactions on Nanotechnology, Vol. 10, No. 5, pp. 975-979, Sep. 2011 [SCI] DOI : 10.1109/TNANO.2010.2091421

[258] Seongjae Cho, Min-Chul Sun, Garam Kim, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology," Journal of Semiconductor Technology and Science, Vol. 11, No. 3, pp. 182-189, Sep. 2011 [SCI] DOI : 10.5573/JSTS.2011.11.3.182

[257] Seongjae Cho and Byung-Gook Park, "A Novel Sensing Scheme for Reliable Read Operation of Ultrathin-Body Vertical NAND Flash Memory Devices," IEEE Transactions on Electron Devices, Vol. 58, No. 8, pp. 2814-2817, Aug. 2011 [SCI] DOI : 10.1109/TED.2011.2157508

[256] Jung Han Lee, Dong Hua Li, Joung-Eob Lee, Kwon-Chil Kang, Kyung Wan Kim, and Byung-Gook Park, "Single Electron Transistor with P-Type Sidewall Spacer Gates," Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, pp. 5618-5622, Jul. 2011 [SCI] DOI : 10.1166/jnn.2011.4329

[255] Garam Kim, Sang Wan Kim, Kyung-Chang Ryoo, Jeong-Hoon Oh, Min-Chul Sun, Hyun Woo Kim, Dae Woong Kwon, Jisoo Chang, Sunghun Jung, and Byung-Gook Park, "Split-Gate-Structure 1T DRAM for Retention Characteristic Improvement," Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, pp. 5603-5607, Jul. 2011 [SCI] DOI : 10.1166/jnn.2011.4333

[254] Jang Hyun Kim, Dae Woong Kwon, Jisoo Chang, Sang Wan Kim, Jae Chul Park, Chang Jung Kim, and Byung-Gook Park, "Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors," Applied Physics Letters, Vol. 99, No. 7, pp. 043502-1-043502-3, Jul. 2011 [SCI] DOI : 10.1063/1.3606538

[253] Taewook Kang, Jungjin Park, Jung-Kyu Lee, Garam Kim, Daeyoung Woo, Joong Kon Son, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Random telegraph noise in GaN-based light-emitting diodes," Electronics Letters, Vol. 47, No. 15, pp. 1-2, Jul. 2011 [SCI] DOI : 10.1049/el.2011.1439

[252] Jang-Gn Yun, Se Hwan Park, and Byung-Gook Park, "LAyer Selection by ERase (LASER) With an Etch-Through-Spacer Technique in a Bit-Line Stacked 3-D NAND Flash Memory Array," IEEE Transactions on Electron Devices, Vol. 58, No. 7, pp. 1892-1897, Jul. 2011 [SCI] DOI : 10.1109/TED.2011.2142417

[251] Joung-Eob Lee, Garam Kim, Kyung Wan Kim, Jung-Han Lee, Kwon-Chil Kang, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors," Japanese Journal of Applied Physics: Regular Papers, Vol. 50, No. 7, pp. 074101-1-074101-5, Jul. 2011 [SCI] DOI : 10.1143/JJAP.50.074101

[250] Myounggon Kang, Ki-Whan Song, Byung-Gook Park, and Hyungcheol Shin, "The novel SCR-based ESD protection with low triggering and high holding voltages," Microelectronics Journal, Vol. 42, No. 6, pp. 837-839, Jun. 2011 [SCI] DOI : 10.1016/j.mejo.2011.04.009

[249] Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang, "RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs," IEEE Transactions on Electron Devices, Vol. 58, No. 5, pp. 1388-1396, May 2011 [SCI] DOI : 10.1109/TED.2011.2109724

[248] Gil Sung Lee, Doo-Hyun Kim, Seongjae Cho, and Byung-Gook Park, "A new 1T DRAM cell: cone type 1T DRAM cell," IEICE Transactions on Electronics, Vol. E94-C, No. 5, pp. 681-685, May 2011 [SCI] DOI : 10.1587/transele.E94.C.681

[247] Seongjae Cho, Jung Hoon Lee, Sunghun Jung, Se Hwan Park, and Byung-Gook Park, "Fabrication and Operation Methods of a One-time Programmable (OTP) Nonvolatile Memory (NVM) Based on a Metal-oxide-semiconductor Structure," Journal of the Korean Physical Society, Vol. 58, No. 5, pp. 1488-1493, May 2011 [SCI] DOI : 10.3938/jkps.58.1488

[246] Heung-Jae Cho, Younghwan Son, Sanghoon Lee, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Study on the oxide trap distribution in a thin gate oxide from random telegraph noise in the drain current and the gate leakage current," Journal of the Korean Physical Society, Vol. 58, No. 5, pp. 1518-1521, May 2011 [SCI] DOI : 10.3938/jkps.58.1518

[245] Heung-Jae Cho, Younghwan Son, Byoungchan Oh, Seunghyun Jang, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Investigation of Gate Etch Damage at Metal/High-k Gate Dielectric Stack through Random Telegraph Noise in Gate Edge Direct Tunneling Current," IEEE Electron Device Letters, Vol. 32, No. 4, pp. 569-571, Apr. 2011 [SCI] DOI : 10.1109/LED.2011.2106108

[244] Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Wandong Kim, Jae Chul Park, Chang Jung Kim, and Byung-Gook Park, "Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor," IEEE Transactions on Electron Devices, Vol. 58, No. 4, pp. 1127-1133, Apr. 2011 [SCI] DOI : 10.1109/TED.2011.2109388

[243] Jang-Gn Yun, Garam Kim, Joung-Eob Lee, Yoon Kim, Won Bo Shim, Jong-Ho Lee, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Single-Crystalline Si STacked ARray (STAR) NAND flash memory," IEEE Transactions on Electron Devices, Vol. 58, No. 4, pp. 1006-1014, Apr. 2011 [SCI] DOI : 10.1109/TED.2011.2107557

[242] Wandong Kim, Dae Woong Kwon, Junghwan Ji, Jung Hoon Lee, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory," Japanese Journal of Applied Physics: Regular Papers, Vol. 50, No. 4, pp. 04DD08-1-04DD08-4, Apr. 2011 [SCI] DOI : 10.1143/JJAP.50.04DD08

[241] Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park, "Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics," Japanese Journal of Applied Physics: Regular Papers, Vol. 50, No. 4, pp. 04DD15-1-04DD15-7, Apr. 2011 [SCI] DOI : 10.1143/JJAP.50.04DD15

[240] Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Wandong Kim, Jae Chul Park, Ihun Song , Chang Jung Kim, U In Jung, and Byung-Gook Park, "Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor," Applied Physics Letters, Vol. 98, No. 6, pp. 635021-635023, Feb. 2011 [SCI] DOI : 10.1063/1.354918

[239] Seongjae Cho, Won Bo Shim, Yoon Kim, Jang-Gn Yun, Jong Duk Lee, Hyungcheol Shin, Jong-Ho Lee, and Byung-Gook Park, "A Charge Trap Folded NAND Flash Memory Device With Band-Gap-Engineered Storage Node," IEEE Transactions on Electron Devices, Vol. 58, No. 2, pp. 288-295, Feb. 2011 [SCI] DOI : 10.1109/TED.2010.2090420

[238] Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang, "Compact Modeling of Silicon Nanowire MOSFET for Radio Frequency Applications," Microwave and Optical Technology Letters, Vol. 53, No. 2, pp. 471-473, Feb. 2011 [SCI] DOI : 10.1002/mop.25686

[237] Ju-Wan Lee, Chan Hyeong Park, Hyungcheol Shin, Byung-Gook Park, and Jong-Ho Lee, "Accurate extraction of ??I / I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode," Applied Physics Letters, Vol. 98, No. 2, pp. 235051-235053, Jan. 2011 [SCI] DOI : 10.1063/1.3543901

[236] Sung-Min Joe, Jeong-Hyong Yi, Sung-Kye Park, Hyungcheol Shin, Byung-Gook Park, Young June Park, and Jong-Ho Lee, "Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate NAND Flash Memory String," IEEE Transactions on Electron Devices, Vol. 58, No. 1, pp. 67-73, Jan. 2011 [SCI] DOI : 10.1109/TED.2010.2088126

[235] Jang-Gn Yun, Jong Duk Lee, and Byung-Gook Park, "3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture," Solid-State Electronics, Vol. 55, No. 1, pp. 37-43, Jan. 2011 [SCI] DOI : 10.1016/j.sse.2010.07.019

[234] Myoung-Sun Lee, Jung-Kyu Lee, Hyun-Sang Hwang, Hyungcheol Shin, Byung-Gook Park, Young June Park, and Jong-Ho Lee, "Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3 for Bipolar Resistive Switching," Japanese Journal of Applied Physics: Regular Papers, Vol. 50, No. 1, pp. 115011-115014, Jan. 2011 [SCI] DOI : 10.1143/JJAP.50.011501

[233] Wandong Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Dong Hua Li, Yoon Kim, Doo-Hyun Kim, Gil Sung Lee, Se Hwan Park, Won Bo Shim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance," IEEE Electron Device Letters, Vol. 31, No. 12, pp. 1374-1376, Dec. 2010 [SCI] DOI : 10.1109/LED.2010.2074180

[232] Seongjae Cho, Shinichi O`uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara , James S. Harris Jr., and Byung-Gook Park, "Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters," Journal of Semiconductor Technology and Science, Vol. 10, No. 4, pp. 265-275, Dec. 2010 [SCI] DOI : 10.5573/JSTS.2010.10.4.265

[231] Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, and Byung-Gook Park, "Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor," Applied Physics Letters, Vol. 97, No. 19, pp. 1935041-1935043, Nov. 2010 [SCI] DOI : 10.1063/1.3508955

[230] Joung-Eob Lee, Garam Kim, Jang-Gn Yun, Kwon-Chil Kang, Jung Han Lee, Dae-Hwan Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 11, pp. 1152011-1152015, Nov. 2010 [SCI] DOI : 10.1143/JJAP.49.115201

[229] Jung Hoon Lee, Gil Sung Lee, Seongjae Cho, Jang-Gn Yun, and Byung-Gook Park, "Investigation of field concentration effects in arch gate Silicon?€?Oxide?€?Nitride?€?Oxide?€?Silicon flash memory," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 11, pp. 1142021-1142026, Nov. 2010 [SCI] DOI : 10.1143/JJAP.49.114202

[228] Joung-Eob Lee, Garam Kim, Kyung Wan Kim, Won Bo Shim, Jung Han Lee, Kwon-Chil Kang, Jang-Gn Yun, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Pocess Using the Recessed Channel Structure," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 11, pp. 1152021-1152026, Nov. 2010 [SCI] DOI : 10.1143/JJAP.49.115202

[227] Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang, "Non-Quasi-Static modeling of silicon nanowire Metal?€?Oxide?€?Semiconductor field-effect transistor and its model verification up to 1 THz," Japanese Journal of Applied Physics: Rapid Communications, Vol. 49, No. 11, pp. 1102061-1102063, Nov. 2010 [SCI] DOI : 10.1143/JJAP.49.110206

[226] Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang, "Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics," Vol. 47, No. 10, pp. 14-22, Oct. 2010 [SCI] DOI : Article/NODE01540693

[225] Ju-Wan Lee, Byoung Hun Lee, Hyungcheol Shin, Byung-Gook Park, Young June Park, and Jong-Ho Lee, "Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs," IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1086-1088, Oct. 2010 [SCI] DOI : 10.1109/LED.2010.2058839

[224] Heung-Jae Cho, Younghwan Son, Byoungchan Oh, Sanghoon Lee, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode," IEEE Transactions on Electron Devices, Vol. 57, No. 10, pp. 2697-2703, Oct. 2010 [SCI] DOI : 10.1109/TED.2010.2057251

[223] Seongjae Cho, Jung Hoon Lee, Shinichi O?€?uchi, Kazuhiko Endo, Meishoku Masahara, and Byung-Gook Park, "Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)," Solid-State Electronics, Vol. 54, No. 10, pp. 1060-1065, Oct. 2010 [SCI] DOI : 10.1016/j.sse.2010.05.013

[222] Jae Young Song, Jong Pil Kim, Sang Wan Kim, Jeong-Hoon Oh, Kyung-Chang Ryoo, Min-Chul Sun, Garam Kim, Jang-Gn Yun, Hyungcheol Shin, and Byung-Gook Park, "Fin and recess-channel metal oxide semiconductor field effect transistor for sub-50nm dynamic random access memory cell," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 10, pp. 1042021-1042025, Oct. 2010 [SCI] DOI : 10.1143/JJAP.49.104202

[221] Heung-Jae Cho, Younghwan Son, Byoungchan Oh, Sanghoon Lee, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Study on Time Constants of Random Telegraph Noise in Gate Leakage Current through Hot-Carrier Stress Test," IEEE Electron Device Letters, Vol. 31, No. 9, pp. 1029-1031, Sep. 2010 [SCI] DOI : 10.1109/LED.2010.2053694

[220] Jongwook Jeon, Byung-Gook Park, and Hyungcheol Shin, "Investigation of thermal noise factor in nanoscale MOSFETs," Journal of Semiconductor Technology and Science, Vol. 10, No. 3, pp. 225-231, Sep. 2010 [SCI] DOI : 10.5573/JSTS.2010.10.3.225

[219] Heesang Kim, Byoungchan Oh, Kyungdo Kim, Seon-Yong Cha, Jae-Goan Jeong, Sung-Joo Hong, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Random Telegraph Signal-like Fluctuation Created by Fowler?€?Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 9, pp. 1-4, Sep. 2010 [SCI] DOI : 10.1143/JJAP.49.094102

[218] Jae Hyun Park, Jae Young Song, Jong Pil Kim, Sang Wan Kim, Jang-Gn Yun, and Byung-Gook Park, "Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal?€?Oxide?€?Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 8, pp. 842031-842035, Aug. 2010 [SCI] DOI : 10.1143/JJAP.49.084203

[217] Doo-Hyun Kim, Seongjae Cho, Dong Hua Li, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Yoon Kim, Won Bo Shim, Se Hwan Park, Wandong Kim, Hyungcheol Shin, and Byung-Gook Park, "Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 8, pp. 843011-843014, Aug. 2010 [SCI] DOI : 10.1143/JJAP.49.084301

[216] Seongjae Cho, Jung-Dal Choi, Byung-Gook Park, and Il Hwan Cho, "Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs," Current Applied Physics, Vol. 10, No. 4, pp. 1096-1102, Jul. 2010 [SCI] DOI : 10.1016/j.cap.2010.01.004

[215] Dong Hua Li, Jang-Gn Yun, Jung Hoon Lee, and Byung-Gook Park, "Scaling behaviors of silicon-nitride layer for charge-trapping memory," Journal of Vacuum Science & Technology A, Vol. 28, No. 4, pp. 675-678, Jun. 2010 [SCI] DOI : 10.1116/1.337815

[214] Dong Seup Lee, Hong Sun Yang, Kwon-Chil Kang, Joung-Eob Lee, Jung Han Lee, Seongjae Cho, and Byung-Gook Park, "Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer," IEICE Transactions on Electronics, Vol. E93-C, No. 5, pp. 540-545, May 2010 [SCI] DOI : 10.1587/transele.E93.C.540

[213] Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang-Gn Yun, Hyungcheol Shin, and Byung-Gook Park, "Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices," IEICE Transactions on Electronics, Vol. E93-C, No. 5, pp. 596-601, May 2010 [SCI] DOI : 10.1587/transele.E93.C.596

[212] Heung-Jae Cho, Sanghoon Lee, Byung-Gook Park, and Hyungcheol Shin, "Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal?€?oxide semiconductor field effect transistor (MOSFET)," Solid-State Electronics, Vol. 54, No. 4, pp. 362-367, Apr. 2010 [SCI] DOI : 10.1016/j.sse.2009.12.033

[211] Seongjae Cho, Hee-Sauk Jhon, Jung Hoon Lee, Se Hwan Park, Hyungcheol Shin, and Byung-Gook Park, "Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal?€?Oxide?€?Semiconductor Field Effect Transistors," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 4, pp. 4031-4037, Apr. 2010 [SCI] DOI : 10.1143/JJAP.49.04DN03

[210] Dong Seup Lee, Kwon-Chil Kang, Joung-Eob Lee, Hong Sun Yang, Jung Han Lee, and Byung-Gook Park, "Dual-Gate Single-Electron Transistor with Silicon Nano Wire Channel and Surrounding Side Gates," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 4, pp. 04DJ01-1-04DJ01-5, Apr. 2010 [SCI] DOI : 10.1143/JJAP.49.04DJ01

[209] Keum-Dong Jung, Yoo Chul Kim, Hyungcheol Shin, Byung-Gook Park, Jong Duk Lee, Eou Sik Cho, and Sang Jik Kwon, "A study on the carrier injection mechanism of the bottom-contact pentacene thin film transistor," Applied Physics Letters, Vol. 96, No. 103305, pp. 1-3, Mar. 2010 [SCI] DOI : 10.1063/1.3339877

[208] Yongmin Kwon, Yeonsung Kang, Sanghoon Lee, Byung-Gook Park, and Hyungcheol Shin, "Analytic Threshold Voltage Model of Recessed Channel MOSFETs," Journal of Semiconductor Technology and Science, Vol. 10, No. 1, pp. 61-65, Mar. 2010 [SCI] DOI : 10.5573/JSTS.2010.10.1.061

[207] Yoon Kim, Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park, "Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS),", Vol. 47, No. 2, pp. 102-107, Feb. 2010 [SCI] DOI 

[206] Dong Hua Li, Il Han Park, Jang-Gn Yun, and Byung-Gook Park, "Effects of tunnel oxide process on SONOS flash memory characteristics," Thin Solid Films, Vol. 518, No. 9, pp. 2509-2512, Feb. 2010 [SCI] DOI : 10.1016/j.tsf.2009.09.163

[205] Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Yongxun Liu, Byung-Gook Park, and Meishoku Masahara, "Minimization of Gate-Induced Drain Leakage by Controlling Gate Underlap Length for Low-Standby-Power Operation of 20-nm-Level Four-Terminal Silicon-on-Insulator Fin-Shaped Field Effect Transistor," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 2, pp. 242031-242035, Feb. 2010 [SCI] DOI : 10.1143/JJAP.49.024203

[204] Seongjae Cho, Won Bo Shim, Il Han Park, Yoon Kim, and Byung-Gook Park, "Highly Scalable 3-D NAND-NOR Hybrid-Type Dual Bit per Cell Flash Memory Devices with an Additional Cut-Off Gate," Journal of the Korean Physical Society, Vol. 56, No. 1, pp. 137-141, Jan. 2010 [SCI] DOI : 10.3938/jkps.56.137

[203] Yoon Kim, Il Han Park, Seongjae Cho, Jang-Gn Yun, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Se Hwan Park, Dong Hua Li, Won Bo Shim, Wandong Kim, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical NOR Array Structure," IEEE Transactions on Nanotechnology, Vol. 9, No. 1, pp. 70-77, Jan. 2010 [SCI] DOI : 10.1109/TNANO.2009.2026173

[202] Jhon Hee Sauk, Lee Jaehong, Jae Ho Lee, Byoungchan Oh, Song Ickhyun, Yoon Yeonam, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "fmax improvement by controlling extrinsic parasitics in circuit-level MOS transistor", IEEE Electron Device Letters, Vol. 30, No. 12, pp.1323-1325, Dec. 2009 [SCI] DOI : 10.1109/LED.2009.2032249

[201] Yeonsung Kang, Heesang Kim, Jae Ho Lee, Younghwan Son, Byung-Gook Park, Jong Duk Lee,and Hyungcheol Shin, "Modeling of polysilicon depletion effect in recessed-channel MOSFETs", IEEE Electron Device Letters, Vol. 30, No. 12, pp.1371-1373, Dec. 2009 [SCI] DOI : 10.1109/LED.2009.2034278

[200] Gil Sung Lee, Jung Hoon Lee, Il Han Park, Seongjae Cho, Jang-Gn Yun, Dong Hwa Li, Doo Hyun Kim, Yoon Kim, Se Hwan Park, Won Bo Shim, Wan Dong Kim, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, "Cone-Type SONOS Flash Memory", IEEE Electron Device Letters, Vol. 30, No. 12 pp.1332-1334, Dec. 2009 [SCI] DOI : 10.1109/LED.2009.2033080

[199] Jieun Lee, Changmin Choi, Sungwook Park, In-Young Chung, Chang-Joon Kim, Byung-Gook Park, Dong Myong Kim and Dae Hwan Kim,?€?Ultra-energy-efficient analog-to-digital converters based on single-electron transistor/CMOS hybrid technology for biomedical applications,?€? Semiconductor Science and Technology, Vol. 24, No. 10, p. 115007, Oct. 2009 [SCI] DOI : 10.1088/0268-1242

[198] Hee-Sauk Jhon, Hakchul Jung, Jongwook Jeon, Minsuk Koo, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, ?€?SIZE EFFICIENT LOW-NOISE AMPLIFIER FOR 2.4 GHz ISM-BAND TRANSCEIVER,?€? Microwave and Optical Technology Letters, Vol. 51, No. 10, pp. 2304 - 2308, Oct. 2009 [SCI] DOI : 10.1002/mop.24600

[197] Jong Pil Kim, Jae Young Song, Sang Wan Kim, Jae Hyun Park, Woo Young Choi, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park,?€?Self-Aligned Asymmetric Metal?€?Oxide?€?Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator,?€?Japanese Journal of Applied Physics, Vol. 48, No. 9, pp. 091201, Sep. 24, 2009 [SCI] DOI : 10.1143/JJAP.48.091201

[196] Seongjae Cho, Il Han Park, Yoon Kim, Se Hwan Park, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park,?€?A Gated Twin-Bit (GTB) Nonvolatile Memory Device and Its Fabrication Method,?€? IEEE Trans. Nanotechnol., Vol. 8, No. 5, pp. 595-602, Sep. 2009 [SCI] DOI : 10.1109/TNANO.2009.2019641

[195] Jang-Gn Yun, Il Han Park, Wandong Kim, Jong Duk Lee, and Byung-Gook Park,?€?Extended Word-Line NAND Flash Memory,?€? Jpn. J. Appl. Phys., Vol. 48, No. 8, pp. 081203, 2009 [SCI] DOI : 10.1143/JJAP.48.081203

[194] Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Daewoong Kang, Myoungrack Lee, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park,?€?Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning,?€? IEEE Trans. Electron Dev., Vol.56, No. 8, pp. 1721-1728, Aug. 2009 [SCI] DOI : 10.1109/TED.2009.2024228

[193] Daewoong Kang, Seungwon Yang, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, ?€?Extraction of trap depth in flash cell having arch-active structure,?€? Applied Physics Express, Vol. 2, No. 7, pp. 71202, July. 2009 [SCI] DOI : 10.1143/APEX.2.071202

[192] Dong Seup Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jung Han Lee, Sang Hyuk Park, and Byung-Gook Park,?€?Silicon-Based Dual-Gate Single-Electron Transistors for Logic Applications,?€? Japanese Journal of Applied Physics, Vol. 48, No. 7, pp. 071203, July 21, 2009 [SCI] DOI : 10.1143/JJAP.48.071203

[191] Dong Seup Lee, Sangwoo Kang, Kwon-Chil Kang, Joung-Eob Lee, Jung Hoon Lee, Kwan-Jae Song, Dong Myong Kim, Jong Duk Lee, and Byung-Gook Park,?€?Fabrication and Characteristics of Self-Aligned Dual-Gate Single-Electron Transistors,?€? IEEE Trans. Nanotechology, Vol.8, No. 4, pp. 492-497, July 2009 [SCI] DOI : 10.1109/TNANO.2009.2016209

[190] Jang-Gn Yun, Jong Duk Lee and Byung-Gook Park, ?€?Various Flash Memory Devices of Novel Design,?€? IETE Technical Review, Vol. 26, No. 4, pp. 247-257, JUL-AUG 2009 [SCI] DOI 

[189] Jaehong Lee, Junsoo Kim, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin, ?€?Application of area-saving RF test structure on mobility extraction,?€? Journal of Semiconductor Technology and Science, Vol.9, No.2, pp. 98-103, June 2009 [SCI] DOI : 10.5573/JSTS.2009.9.2.098

[188] Younghwan Son, Seungwon Yang, Bong Chan Kim, Jinho Kim, Chang-Rok Moon, Duckhyung Lee, Jong-Duk Lee, Byung-Gook Park, and Hyungcheol Shin, ?€?Extraction of Interface-States Energy Distribution in Nitrided and Pure Gate Dielectrics for Metal Oxide Semiconductor Field Effect Transistor Applications,?€? Japanese Journal of Applied Physics, Vol. 48, No. 5, pp. 054502, May 2009 [SCI] DOI : 10.1143/JJAP.48.054502

[187] Changmin Choi, Jieun Lee, Sungwook Park, In-Young Chung, Chang-Joon Kim, Byung-Gook Park, Dong Myong Kim and Dae Hwan Kim, ?€?Comparative study on the energy efficiency of logic gates based on single-electron transistor technology,?€? 2009 Semicond. Sci. Technol., Vol. 24, No. 6, pp. 065007, 5 May 2009 [SCI] DOI : 10.1109/TNANO.2011.2125799

[186] Byung-Gook Park, Jae Young Song, Jong Pil Kim, Hoon Jeong, Jung Hoon Lee, Seongjae Cho, ?€?Nanosculpture: Three-dimensional CMOS device structures for the ULSI era,?€? Microelectronics Journal, Vol. 40, No. 4-5, pp. 769-772, April-May 2009 [SCI] DOI : 10.1016/j.mejo.2008.11.011

[185] Doo-Hyun Kim, Il Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, ?€?Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory,?€? IEICE Transactions on Electronics, Vol. E92-C, No. 5, pp. 659-663, May 2009 [SCI] DOI : 10.1587/transele.E92.C.659

[184] Yoon Kim, Seongjae Cho, Gil Sung Lee, Il Han Park, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, ?€?3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array,?€? IEICE Transactions on Electronics, Vol. E92-C, No. 5, pp. 653-658, May 2009 [SCI] DOI : 10.1587/transele.E92.C.653

[183] Sang Hyuk Park, Sangwoo Kang, Seongjae Cho, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, and Byung-Gook Park, ?€?Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation,?€? IEICE Transactions on Electronics, Vol. E92-C, No. 5, pp. 647-652, May 2009 [SCI] DOI : 10.1587/transele.E92.C.647

[182] Jongwook Jeon, Ickhyun Song, Jong Duk Lee, Byung-Gook Park, and Hyungcheol Shin?€?Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design,?€? IEICE Transactions on Electronics, Vol. E92-C, No. 5, pp. 627-634, May 2009 [SCI] DOI : 10.1587/transele.E92.C.627

[181] Seongjae Cho, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, ?€?Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL),?€? IEICE Transactions on Electronics, Vol. E92-C, No. 5, pp. 620-626, May 2009 [SCI] DOI : 10.1587/transele.E92.C.620

[180] Daewoong Kang, Jinho Kim, Duckhyung Lee, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, ?€?Extraction of vertical, lateral locations and energies of hot-electrons-induced traps through the random telegraph noise,?€? Japanese Journal of Applied Physics: Special Issues - Solid State Devices and Materials, Vol. 47, No. 4S, pp. 2606-2609, April 2009 [SCI] DOI : 10.1143/JJAP.48.04C034

[179] Jongwook Jeon, Jaehong Lee, Chan Hyeong Park, Hyunwoo Lee, Hansu Oh, Ho-Kyu Kang, Byung-Gook Park, and Hyungcheol Shin, ?€?Accurate extraction of excess channel thermal noise coefficient in berkeley short-channel insulated gate field-effect transistor model 4,?€? Japanese Journal of Applied Physics: Special Issues - Solid State Devices and Materials, Vol. 48, No. 4S, pp. 04C037-1~5, April 2009 [SCI] DOI : 10.1143/JJAP.48.04C037

[178] Minsuk Koo, Hakchul Jung, Hee-Sauk Jhon, Byung-Gook Park, Jong Duk Lee, and , Hyungcheol Shin, ?€?Investigation of frequency dependent sensitivity of noise figure on device parameters in 65 nm CMOS,?€? Journal of Semiconductor Technolegy and Science, Vol. 9, No. 1, pp. 61-66, March 2009 [SCI] DOI : 10.5573/JSTS.2009.9.1.061

[177] Junsoo Kim, Jaehong Lee, Youngmin Kwon, , Byung-Gook Park, Jong Duk Lee, and , Hyungcheol Shin, ?€?Extraction of ballistic parameters in 65 nm MOSFETs,?€? Journal of Semiconductor Technolegy and Science, Vol. 9, No. 1, pp. 55-60, March 2009 [SCI] DOI : 10.5573/JSTS.2009.9.1.055

[176] Keum-Dong Jung, Yoo Chul Kim, Byung-Gook Park, Hyungcheol Shin, Jong Duk Lee, ?€?Modeling and Parameter Extraction for the Series Resistance in Thin-Film Transistors,?€? IEEE Transactions on Electron Devices, Vol. 56, No. 3, pp. 431-440, March 2009 [SCI] DOI : 10.1109/TED.2008.2010579

[175] Hee-Sauk Jhon, Ickhyun Song, Jongwook Jeon, Minsuk Koo, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin, ?€?Low Power Size-Efficient CMOS UWB Low-Noise Amplifier Design,?€? Microwave and Optical Technology Letters, Vol. 51, No.2, pp. 494-496, Feb. 2009. [SCI] DOI : 10.1002/mop.24104

[174] Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, and Byung-Gook Park, "A 2-Bit Recessed Channel Nonvolatile Memory Device With a Lifted Charge-Trapping Node," IEEE Trans. Nanotechnol., Vol. 8, No. 1, pp. 111-115, 2009 [SCI] DOI : 10.1109/TNANO.2008.2006049

[173] Ickhyun Song, Jongwook Jeon, Hee-Sauk Jhon, Junsoo Kim, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin, ?€?A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design,?€? Electron Device Letters, Vol. 29, No.12, pp. 1380-1382, Dec. 2008. [SCI] DOI : 10.1109/LED.2008.2006863

[172] Seongjae Cho, Il Han Park, Jung Hoon Lee, Younghwan Son, Jong Duk Lee, Hyungcheol Shin and Byung-Gook Park, "Dependence of Program Efficiency on Channel Conditions Regarding NOR-Type Flash Memory Devices Fabricated on a Silicon-on-Insulator (SOI) Substrate,"Journal of the Korean Physical Society, Vol. 53, No. 6, pp. 3422-3426, December 2008. [SCI] DOI : 10.3938/jkps.53.3422

[171] Hee-Sauk Jhon, Ickhyun Song, Jongwook Jeon, Hakchul Jung, Minsuk Koo, Byung-Gook Park, Jong Duk Lee and Hyungcheol Shin, ?€?8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application,?€? IEE Electronics Letters, Vol. 44, No. 23, pp. 1353-1354, Nov. 2008. [SCI] DOI 

[170] Kyung Rok Kim, Byung-Gook Park and R.W. Dutton, ?€?Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance,?€? IEE Electronics Letters, Vol. 44, No. 23, pp. 1379-1381, Nov. 2008. [SCI] DOI 

[169] Junsoo Kim, Jaehong Lee, Ickhyun Song, Yoenam Yun, Jong Duk Lee, Byung-Gook Park, and Hyungcheol Shin, ?€?Accurate extraction of effective channel length and source/drain series resistance in ultra short-channel MOSFETs by iteration method, IEEE Transaction on Electron Devices, Vol. 55, No.10, pp.2779-2784, October 2008. [SCI] DOI : 10.1109/TED.2008.2003081

[168] Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Sangwoo Kang, Dong-Hua Lee, Seongjae Cho, Doo-Hyun Kim, Gil Sung Lee, Won-Bo Sim, Younghwan Son, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Fabrication and characterization of fin SONOS flash memory with separated double-gate structure," Solid-State Electron., Vol. 52, No. 10, pp. 1498-1504, October 2008. [SCI] DOI : 10.1016/j.sse.2008.06.021

[167] Jong Duk Lee, Byung-Gook Park, and Keum-Dong Jung, "Reliability Issues of Bottom-Contact Pentacene Thin-Film Transistors," Saians Malaysiana, Vol. 37, No. 3, pp.295-298, September 2008. [SCI] DOI 

[166] Kyung Rok Kim, Byung-Gook Park and R.W. Dutton, "Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body," IEE Electronics Letters, Vol. 44, No. 18, pp. 1089-1090, Aug. 2008. [SCI] DOI : 10.1049/el:20082134

[165] Seung-Hwan Seo, Se-Woon Kim, Jang-Uk Lee, Gu-Cheol Kang, Kang-Seob Roh, Kwan-Young Kim, Soon-Young Lee, Chang-Min Choi, Kwan-Jae Song, So-Ra Park, Jun-Hyun Park, Ki-Chan Jeon, Dong Myong Kim, Dae Hwan Kim, Hyungcheol Shin, Jong Duk Lee and Byung-Gook Park, "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories," Solid-State Electronics, Vol. 52, No. 6, pp. 844-848, Jun. 2008. [SCI] DOI 

[164] Seongjae CHO, Il Han PARK, Jung Hoon LEE, Jong Duk LEE, and Byung-Gook Park, "Evaluation and Resolution for Nonideal Characteristics of Complementary Metal-Oxide-Semiconductor Devices Fabricated on Silicon-on-Insulator," Japanese Journal of Applied Physics, Vol. 47 No. 6 pp. 4408-4412, June 2008. [SCI] DOI : 10.1143/JJAP.47.4408

[163] Jang Gn YUN, Il Han PARK, Seongjae CHO, Jung Hoon LEE, Doo-Hyun KIM, Gil Sung LEE, Yoon KIM, Jong Duk LEE, and Byung-Gook Park, ?€?Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme,?€? IEICE Transactions on Electronics, Vol. E91-C, No. 5, pp. 742-746, May 2008 [SCI] DOI : 10.1093/ietele

[162] Seongjae Cho, Il Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, ?€?Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI),?€? IEICE Transactions on Electronics, Vol. E91-C, No. 5, pp. 731-735, May 2008 [SCI] DOI : 10.1093/ietele

[161] Sangwoo Kang, Dae-Hwan Kim, Il-Han Park, Jin-Ho Kim, Joung-Eob Lee, Jong Duk Lee, and Byung-Gook Park, "Self-aligned dual-gate single-electron transistors," Japanese Journal of Applied Physics, Vol. 47, No. 4, pp. 3118-3122, Apr. 2008. [SCI] DOI : 10.1143/JJAP.47.3118

[160] Dae Woong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Dongwon Chang, Hyukje Kwon, Wonseong Lee, Il Han Park, Junsoo Kim, Lee Jaehong, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin, "Improving the cell characteristics using SiN liner at active edge in 4 gbits NAND flash memories", Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Rev, Vol. 47, No. 4, pp.2676-2679, Apr. 2008 [SCI] DOI : 10.1143/JJAP.47.2676

[159] Jun Jongwook, Yoon Yeonam, Junsoo Kim, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin, "On the characteristics and spatial dependence of channel thermal noise in nanoscale Metal?€?Oixde?€?Semiconductor field effect transistors", Japanese Journal of Applied Physics Part 2-Letters & Express Letters, Vol. 47, No. 4, pp.2636-2640, Apr. 2008 [SCI] DOI : 10.1143/JJAP.47.2636

[158] Keum-Dong Jung, Yoo Chul Kim, Byeong-Ju Kim, Byung-Gook Park, Hyungcheol Shin, and Jong Duk Lee, "An Analytic Current-Voltage Equation for Top-Contact Organic Thin Film Transistors Including the Effects of Variable Series Resistance," Japanese Journal of Applied Physics, Vol. 47, No. 4, pp. 3174-3178, April, 2008 [SCI] DOI : 10.1143/JJAP.47.3174

[157] Seung-Hwan Seo, Gu-Cheol Kang, Kang Seob Roh, Kwan Young Kim, Sunyeong Lee, Kwan-Jae Song, Chang Min Choi, So Ra Park, Kichan Jeon, Jun-Hyun Park, Byung-Gook Park, Jong Duk Lee, Dong Myong Kim, Dae Hwan Kim, "Dynamic bias temperature instability-like behaviors under Fowler-Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories", Appl. Phys. Lett., Vol. 92, No. 13, pp. 133508 April 2008. [SCI] DOI : 10.1063/1.2905272

[156] Junsoo Kim, Lee Jaehong, Song Ickhyun, Jong Duk Lee, Byung-Gook Park, Seungbum HONG, Hyoungsoo KO, Dong-Ki MIN, Hongsik PARK, Chulmin PARK, Juhwan JUNG, Hyungcheol Shin, "Characterization of sensitivity and resolution of silicon resistive probe", Japanese Journal of Applied Physics Part 2-Letters & Express Letters, Vol. 47 No. 3 pp.1717-1722, Mar. 2008 [SCI] DOI : 10.1143/JJAP.47.1717

[155] Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong-Duk Lee, and Byung-Gook Park, "Formation of Si-Rich Silicon Nitride with Low Deposition Rate by Using LPCVD for Nanoscale Non-Volatile-Memory Application," Journal of the Korean Physical Society, Vol. 51, No. 96, pp. S229~S233, December 2007. [SCI] DOI : 10.3938/jkps.51.229

[154] Sunyeong Lee, Ki-Chan Jeon, Jang-Uk Lee, Se-Woon Kim, Seung-Hwan Seo, Kang-Seob Roh, Gu-Cheol kang, Kwan-Young Kim, Chang-Min Choi, Kwan-Jae Song, So-Ra Park, Jun-Hyun Park, Dong Myong Kim, Dae Hwan Kim, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park, "Optical charge pumping technique for extracting interface states of nano-scale SONOS flash memories", Journal of the Korean Physical Society, Vol. 51, No. 6, pp.2063-2068, Dec. 2007 [SCI] DOI : 10.3938/jkps.51.2063

[153] Jang Uk Lee, Kang Seob Roh, Gu Cheol Kang, Seung Hwan Seo, Kwan Young Kim, Sunyeong Lee, Kwan Jae Song, Chang Min Choi, So Ra Park, Jun Hyun Park, Ki Chan Jeon, and Dae Hwan Kim, Byung-Gook Park and Jong Duk Lee, and Dong Myong Kim, "Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices," Appl. Phys. Lett., Vol. 91, No. 22, p. 223511, Nov. 2007. [SCI] DOI : 10.1063/1.2819092

[152] Jong Pil Kim, Woo Young Choi, Jae Young Song, Sang Wan Kim, Jong Duk Lee, and Byung-Gook Park, "Design and Fabrication of Asymmetric MOSFETs Using a Novel Self-Aligned Structure," IEEE Transactions on Electron Devices, Vol. 54, No. 11, pp. 2969-2974, November 2007. [SCI] DOI : 10.1109/TED.2007.906969

[151] Woo Young Choi, Byung-Gook Park, Jong Duk Lee, and Tsu-Jae King Liu, "Tunneling Field Effect Transistor (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec", IEEE Electron Device Letters, Vol. 28, No. 8, pp. 743-745, August 2007. [SCI] DOI : 10.1109/LED.2007.901273

[150] Jongwook Jeon, Jong Duk Lee, Byung-Gook Park, and Hyungcheol Shin, "An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects," Solid-State Electronics, Vol. 51, No. 7, pp. 1034-1038, July 2007 [SCI] DOI : 10.1016/j.sse.2007.05.004

[149] Youngho Jung, Hee Sauk Jhon, In Man Kang, Jong Duk Lee, Byung-Gook Park, and Hyungcheol Shin, "7GHz and 25.8GHz LC VCO Using 0.18 ??m Mixed Signal CMOS Process," , ELEKTRIKA, Vol. 9, No. 1, pp. 48-51, June 2007. [SCI] DOI 

[148] Jongwook Jeon, Jong Duk Lee, Byung-Gook Park, and Hyungcheol Shin, "Analytical noise parameter model of short-channel RF MOSFETs," Journal of Semiconductor Technology and Science, Vol. 7, No. 2, pp.88-93, June 2007 [SCI] DOI : 10.5573/JSTS.2007.7.2.088

[147] Hoon Jeong, Ki-Whan Song, Il Han Park, Tae-Hun Kim, Yeun Seung Lee, Seong-Goo Kim, Jun Seo, Kyoungyong Cho, Kangyoon Lee, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park, "A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET with Vertical Channel (SGVC cell)", IEEE Transactions on Nanotechnology, Vol. 6, No. 3, pp. 352-357, May 2007. [SCI] DOI : 10.1109/TNANO.2007.893575

[146] Jong Pil Kim, Woo Young Choi, Jae Young Song, Seongjae Cho, Sang Wan Kim, Jong Duk Lee, and Byung-Gook Park, ?€?Design and Simulation of Asymmetric MOSFETs?€?, IEICE Trans. Electron., Vol. 54, No. 11, pp. 2969-2974, May 2007. [SCI] DOI : 10.1093/ietele

[145] Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hun Lee, Jong Pil Kim, Jong Duk Lee, Hyungcheol Shin and Byung-Gook Park, ?€?Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices,?€? IEICE Trans. Electron., Vol. E90-C, No. 5, pp. 988-993, May 2007. [SCI] DOI : 10.1093/ietele

[144] Hoon Jeong, Yeun Seung Lee, Sangwoo Kang, Il Han Park, Woo Young Choi, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Capacitorless Dynamic Random Access Memory Cell with Highly Scalable Surrounding Gate Strcucture," Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2143-2147, April 2007. [SCI] DOI : 10.1143/JJAP.46.2143

[143] Dong-Wook Park, Cheon An Lee, Keum-Dong Jung, Byeong-Ju Kim, Byung-Gook Park, Hyungcheol Shin, and Jong Duk Lee, "Electrically Stable Organic Thin-Film Transistors and Circuits Using Organic/Inorganic Double-Layer Insulator", Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2640-2644, April 2007. [SCI] DOI : 10.1143/JJAP.46.2640

[142] Cheon An Lee, Dong-Wook Park, Keum-Dong Jung, Jong Duk Lee, and Byung-Gook Park, "Full-Swing Pentacene Organic Inverter with Long-Channel Driver and Short-Channel Load", Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2661-2665, April 2007. [SCI] DOI : 10.1143/JJAP.46.2661

[141] Jae Young Song, Woo Young Choi, Jong Pil Kim, Sang Wan Kim, Jong Duk Lee, and Byung-Gook Park, "Novel Gate-All-Around Metal-Oxide-Semicondurctor Field Effect Transistors with Self-Aligned Structure", Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2046-2049, April 2007. [SCI] DOI : 10.1143/JJAP.46.2046

[140] Woo Young Choi, Jong Duk Lee, and Byung-Gook Park, "Novel Tunneling Devices with Multi-Functionality", Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2622-2625, April 2007. [SCI] DOI : 10.1143/JJAP.46.2622

[139] Keum-Dong Jung, Cheon An Lee, Dong-Wook Park, Byung-Gook Park, Hyungcheol Shin, and Jong Duk Lee, "Admittance Measurements on OFET Channel and Its Modeling With R-C Network," IEEE Electron Device Letters, Vol. 28, No. 3, pp. 204-206, March 2007. [SCI] DOI : 10.1109/LED.2007.891256

[138] Kyu Il Han, Yong Min Park, Sung Kim, Suk-Ho Choi, Kyung Joong Kim, Il Han Park, and Byung-Gook Park, "Enhancement of Memory Performance Using Doubly Stacked Si-Nanocrystal Floating Gates Prepared by Ion Beam Sputtering in UHV," IEEE Transactions on Electron Devices, Vol. 54, No. 2, pp. 359-362, February 2007. [SCI] DOI : 10.1109/TED.2006.888674

[137] Woo Young Choi, Jong Duk Lee, and Byung-Gook Park, "Integration Process of Impact-Ionization Metal-Oxide-Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal-Oxide-Semiconductor Field-Effect Transistors," Japanese Journal of Applied Physics, Vol. 46, No. 1, Jan. 2007, pp. 122~124. [SCI] DOI : 10.1143/JJAP.46.122

[136] Seung-Hwan Song, Kyung Rok Kim, Jin Ho Kim, Sangwoo Kang, Kwon Chil Kang, Jong Duk Lee, and Byung-Gook Park, "Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs," Journal of Korean Physical Society, Vol. 49, No. 98, pp. S790~S794. [SCI] DOI 

[135] Dong-Wook Park, Cheon An Lee, Keum-Dong Jung, Byung-Gook Park, Hyungcheol Shin, and Jong Duk Lee, "Low hysteresis pentacene thin-film transistors using SiO2/cross-linked poly(vinyl alcohol) gate dielectric," Appl. Phys. Lett., Vol. 89, No. 26, pp. 263507-263509, Dec. 2006 [SCI] DOI : 10.1063/1.2424666

[134] Cheon An Lee, Dong-Wook Park, Keum-Dong Jung, Byung-ju Kim, Yoo Chul Kim, Jong Duk Lee, and Byung-Gook Park, "Hysteresis mechanism in pentacene thin-film transistors with poly(4-vinyl phenol) gate insulator," Appl. Phys. Lett., Vol. 89, No. 26, pp. 262120-262122, Dec. 2006 [SCI] DOI : 10.1063/1.2425042

[133] Tae Hun Kim, Il Han Park, Jong Duk Lee, Hyung Cheol Shin, and Byung-Gook Park, "Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitrideoxide-silicon structure at elevated temperatures," Appl. Phys. Lett., Vol. 89, No. 6, p. 063508, Aug. 2006. [SCI] DOI : 10.1063/1.2335619

[132] Cheon An Lee, Sung Hun Jin, Keum Dong Jung, Jong Duk Lee, Byung-Gook Park, "Full-swing pentacene organic inverter with enhancement-mode driver and depletion-mode load," Solid-State Electronics, Vol. 50, No. 7-8, pp. 1216-1218, July-August 2006. [SCI] DOI : 10.1109/DRC.2004.1367850

[131] Woo Young Choi, Byung Yong Choi, Dong-Won Kim, Choong-Ho Lee, Donggun Park, Jong Duk Lee, and Byung-Gook Park, "25-nm Programmable Virtual Source/Drain MOSFETs Using a Twin SONOS Memory Structure," Solid-State Electronics, Vol. 50, No. 6, pp. 914-919, June 2006. [SCI] DOI : 10.1109/ISDRS.2005.1596149

[130] Cheon An Lee, Dong Wook Park, Sung Hun Jin, Il Han Park, Jong Duk Lee, and Byung-Gook Park, "Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator," Appl. Phys. Lett., Vol. 88, No. 25, pp. 252102, June 2006. [SCI] DOI : 10.1063/1.2213969

[129] Il Hwan Cho, Tai-Su Park, Jeong Dong Choe, Hye Jin Cho, Donggun Park, Hyungcheol Shin, Byung-Gook Park, Jong Duk Lee, and Jong-Ho Lee, "Fabrication and characteristics of P-channel silicon-oxide-nitride-oxidesilicon flash memory device based on bulk fin shaped field effect transistor structure," Journal of Vacuum Science and Technology B, Vol. 24, No. 3, pp. 1266-1270, May/June 2006. [SCI] DOI : 10.1116/1.219751

[128] Il Han Park, Tae Hun Kim, Seongjae Cho, Jung Hoon Lee, Jong Duk Lee, and Byung-Gook Park, "Depletion-Enhanced Body-Isolation (DEBI) Array on SOI for Highly Scalable and Reliable NAND Flash Memories," IEEE Transactions on Nanotechnology, Vol. 5, No. 3, pp. 201-204, May 2006. [SCI] DOI : 10.1109/TNANO.2006.869951

[127] Seung-Hwan Song, Kyung Rok Kim, Sangwoo Kang, Jin Ho Kim, Jung Im Huh, Kwon Chil Kang, Ki-Whan Song, Jong Duk Lee, and Byung-Gook Park, "Analytical Modeling of Field-Induced Interband Tunneling-Effect Transistors and Its Application," IEEE Transactions on Nanotechnology, Vol. 5, No. 3, pp. 192-200, May 2006. [SCI] DOI : 10.1109/TNANO.2006.869950

[126] Jae Young Song, Woo Young Choi, Ju Hee Park, Jong Duk Lee, and Byung-Gook Park, "Design Optimization of Gate-All-Around (GAA) MOSFETs," IEEE Transactions on Nanotechnology, Vol. 5, No. 3, pp. 186-191, May 2006. [SCI] DOI : 10.1109/TNANO.2006.869952

[125] Seongjae Cho, Il Han Park, Tae Hun Kim, Jae Sung Sim, Ki-Whan Song, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, "Design and Optimization of Two-Bit Double-Gate Nonvolatile Memory Cell for Highly Reliable Operation," IEEE Transactions on Nanotechnology, Vol. 5, No. 3, pp. 180-185, May 2006. [SCI] DOI : 10.1109/TNANO.2006.869943

[124] Woo Young Choi, Jae Young Song, Jong Duk Lee, and Byung-Gook Park, "Effect of Source Extension Junction Depth and Substrate Doping Concentration on I-MOS Device Characteristics," IEEE Transactions on Electron Devices, Vol. 53, No. 5, pp. 1282-1285, May 2006. [SCI] DOI : 10.1109/TED.2006.872097

[123] Woo Yong Choi, Jong Duk Lee, and Byung-Gook Park, "Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices," Journal of Semiconductor Technology and Science, Vol. 6, No. 1, pp. 43-51, March 2006. [SCI] DOI 

[122] Sung Hun Jin, Keum Dong Jung, Hyungcheol Shin, Byung-Gook Park, Jong Duk Lee, "Grain size effects on contact resistance of top-contact pentacene TFTs," Synthetic Metals, Vol. 156, No. 2-4, pp. 196-201, January 2006. [SCI] DOI : 10.1016/j.synthmet.2005.11.012

[121] Sung Hun Jin, Cheon An Lee, Keum Dong Jung, Hyungcheol Shin, Byung-Gook Park, and Jong Duk Lee, "Performance Improvement of Scaled-Down Top-Contact OTFTs by Two-Step-Deposition of Pentacene," IEEE Electron Device Letters, Vol. 26, No. 12, pp. 903-905, December 2005. [SCI] DOI : 10.1109/LED.2005.859678

[120] Seongjae Cho, Il Han Park, Tae Hun Kim, Jung Hoon Lee, Jong Duk Lee, Hyungcheol Shin and Byung-Gook Park, "Quantitative Analysis on Voltage Schemes for Reliable operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell ," Journal of Semiconductor Technology and Science, Vol. 5, No. 3, pp. 195-203, September 2005. [SCI] DOI 

[119] Byung-Gook Park, Byung Yong Choi, Woo Young Choi, Yong Kyu Lee, Jong Duk Lee, Hyungcheol Shin, Suk-Kang Sung, Tae-Yong Kim, Eun Suk Cho, Byung Kyu Cho, Keun Hee Bai, Dong-Dae Kim, Dong-Won Kim, Choong-Ho Lee and Donggun Park, "Highly Manufacturable and Reliable 80-nm Gate Twin Silicon-Oxide-Nitride-Oxide-Silicon Memory Transistor," Jpn. J. Appl. Phys. Vol. 44, No. 39, pp. L 1214-L 1217, September 2005. [SCI] DOI : 10.1143/JJAP.44.L1214

[118] Ki-Whan Song, Yong Kyu Lee, Jae Sung Sim, Hoon Jeoung, Jong Duk Lee, Byung-Gook Park, You Seung Jin, and Young-Wug Kim, "SET/CMOS Hybrid Process and Multiband Filtering Circuits," IEEE Transactions on Electron Devices, Vol. 52, No. 8, pp. 1845-1850, August 2005. [SCI] DOI : 10.1109/TED.2005.852730

[117] Chang-Bum Park, Keum-Dong Jung, Sung Hun Jin, Byung-Gook Park, and Jong Duk Lee, "Pentacene-based Thin Film Transistors with Improved Mobility Characteristics using Hybrid Gate Insulator," Journal of Information Display, Vol. 6, No. 2, pp. 16-18, June 2005. [SCI] DOI : 10.108/15980316.2005.9651973

[116] Woo Young Choi, Jae Young Song, Jong Duk Lee, Young June Park, and Byung-Gook Park, "A Novel Biasing Scheme for I-MOS (Impact-Ionization MOS) Devices," IEEE Transactions on Nanotechnology, Vol. 4, No. 3, pp. 322-325, May 2005. [SCI] DOI : 10.1109/TNANO.2005.847001

[115] Kyung Rok Kim, Hyun Ho Kim, Ki-Whan Song, Jung Im Huh, Jong Duk Lee, and Byung-Gook Park, "Field-Induced Interband Tunneling Effect Transistor (FITET) With Negative-Differential Transconductance and Negative-Differential Conductance," IEEE Transactions on Nanotechnology, Vol. 4, No. 3, pp. 317-321, May 2005. [SCI] DOI : 10.1109/TNANO.2005.847008

[114] Ki-Whan Song, Yong Kyu Lee, Jae Sung Sim, Kyung Rok Kim, Jong Duk Lee, Byung-Gook Park, Young Sub You, Joo-On Park, You Seung Jin and Young-Wug Kim, "Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process," Jpn. J. Appl. Phys. Vol. 44, pp. 2618-2622, No. 4B, April 2005. [SCI] DOI : 10.1143/JJAP.44.2618

[113] Woo Young Choi, Jae Young Song, Jong Duk Lee, Young June Park, and Byung Gook Park, "100-nm n-/p-Channel I-MOS Using a Novel Self-Aligned Structure," IEEE Electron Device Letters, Vol. 26, No. 4, pp. 261-263, April 2005. [SCI] DOI : 10.1109/LED.2005.844695

[112] Junsoo Kim, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "MOSFETs with Biased Spacer Having Different Work Function from the Gate," Journal of Korean Physical Society, Vol. 45, No. 5, pp. 1093-1097, November 2004. [SCI] DOI 

[111] Sang Sik Park, Hyuck In Kwon, O Jun Kwon, Hyungcheol Shin, Byung-Gook Park, Jong Duk Lee, Yong Jei Lee and Yong Hee Lee, "The Influence of Deuterium Annealing on the Evolution of Interface Trap Capture Cross Sections in n-MOSFET under Channel-Hot-Electron and Fowler-Nordheim Stresses," Journal of Korean Physical Society, Vol. 45, No. 5, pp. 1300-1303, November 2004. [SCI] DOI

[110] Woo Young Choi, Hwi Kim, Byoungho Lee, Jong Duk Lee, and Byung-Gook Park, "Stable Threshold Voltage Extraction Using Tikhonovs Regularization Theory," IEEE Transactions on Electron Devices, Vol. 51, No. 11, pp. 1833-1839, November 2004. [SCI] DOI : 10.1109/TED.2004.837010

[109] Jae Sung Sim, Jong Duk Lee and Byung-Gook Park, "The simulation of single-charging effects in the programming characteristics of nanocrystal memories," Nanotechnology, Vol. 15, No. 10, pp. S603-S611, October 2004. [SCI] DOI : 10.1088/0957-4484

[108] Yong Kyu Lee, Jong Duk Lee, Byung-Gook Park, Sung Taeg Kang, Chilhee Chung, and Donggun Park, "Inverted sidewall spacer and inner offset oxide process for excellent 2-bit silicon-oxide-nitride-oxide-silicon memory under 100 nm gate length", Journal of Vacuum Science and Technology B, Vol. 22, No. 5, pp. 2493-2498, Sep./Oct. 2004 [SCI] DOI : 10.1116/1.1800354

[107] Euo Sik Cho, Cheon An Lee, Gwanghyeon Baek, Hyung Soo Uh, Sang Jik Kwon, Hyungcheol Shin, Byung-Gook Park, and Jong Duk Lee, "Effects of phosphorus implantation and subsequent growth on diamond," Thin Solid Films, Volume 462-463, pp. 24-28, September, 2004. [SCI] DOI : 10.1016/j.tsf.2004.05.103

[106] Yong Kyu Lee, Suk Kang Sung, Jae Sung Sim, Ki Whan Song, Jong Duk Lee, Byung-Gook Park, Sung Taeg Kang, Chilhee Chung, Donggun Park, Kinam Kim, "Scalable 2-bit silicon-oxide-nitride-oxide-silicon (SONOS) memory with physically separated local nitrides under a merged gate," Solid-State Electronics, Vol. 48, No. 10-11, pp. 1771-1775, October-November 2004. [SCI] DOI : 10.1016/j.sse.2004.05.048

[105] Hyuck In Kwon, O Jun Kwon, Hyungcheol Shin, Byung-Gook Park, Sang Sik Park, and Jong Duk Lee, "The Effects of Deuterium Annealing on the Reduction of Dark Currents in the CMOS APS" IEEE Transactions on Electron Devices, Vol. 51, No. 8, pp. 1346-1349, August 2004. [SCI] DOI : 10.1109/TED.2004.832714

[104] Tae Hun Kim, Jae Sung Sim, Jong Duk Lee, Hyung Cheol Shin, and Byung-Gook Park, "Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution," Appl. Phys. Lett., Vol. 85, No. 4, pp. 660-662, July 2004. [SCI] DOI : 10.1063/1.1773615

[103] Kyung Rok Kim, Dae Hwan Kim, Ki-Whan Song, Gwanghyeon Baek, Hyun Ho Kim, Jung Im Huh, Jong Duk Lee, and Byung Gook Park, "Silicon-Based Field-Induced Band-to-band Tunneling Effect Transistor," IEEE Electron Device Letters, Vol. 25, No. 6, pp. 439-441, June 2004. [SCI] DOI : 10.1109/LED.2004.829668

[102] Byung-Gook Park, Dong-Soo Woo and Jong Duk Lee, "Self-aligned FinFETs with Wide Source/Drain Regions," Transactions of the Materials Research Society of Japan, Vol. 29, No. 3, pp.701-705, May 2004. [SCI] DOI : journal.html/

[101] Yong Kyu Lee, Ki Whan Song, Jae Woong Hyun, Jong Duk Lee, Byung Gook Park, Sung Taeg Kang, Jeong Dong Choe, Sang Yeon Han, Jeong Nam Han, Sung Woo Lee, O. Ik Kwon, Chilhee Chung, Donggun Park, and Kinam Kim, "Twin SONOS Memory With 30-nm Storage Nodes under a Merged Gate Fabricated With Inverted Sidewall and Damascene Process," IEEE Electron Device Letters, Vol. 25, No. 5, pp. 317-319, May 2004. [SCI] DOI : 10.1109/LED.2004.826535

[100] Soodoo Chae, Changju Lee, Juhyung Kim, Sukkang Sung, Jaeseong Sim, Moonkyung Kim, Sewook Yoon, Younseok Jeong, Wonil Ryu, Taehun Kim, Byung-Gook Park, Jo-won Lee and Chungwoo Kim, "70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method," Jpn. J. Appl. Phys. Vol. 43, pp. 2207-2210, Part 1, No. 4B, April 2004. [SCI] DOI : 10.1143/JJAP.43.2207

[99] Jae Sung Sim, Jihye Kong, Jong Duk Lee and Byung-Gook Park, "Monte Carlo Simulation of Single-Electron Nanocrystal Memories," Jpn. J. Appl. Phys. Vol. 43, No. 4B, pp. 2041-2045, Part 1, April 2004. [SCI] DOI : 10.1143/JJAP.43.2041

[98] Kyung Rok Kim, Ki-Whan Song, Dae Hwan Kim, Gwanghyeon Baek, Hyun Ho Kim, Jung Im Huh, Jong Duk Lee, Byung-Gook Park, "Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region," Jpn. J. Appl. Phys. Vol. 43, pp. 2031-2035, Part 1, No. 4B, April 2004. [SCI] DOI : 10.1143/JJAP.43.2031

[97] Woo Young Choi, Dong Soo Woo, Byung Yong Choi, Jong Duk Lee and Byung-Gook Park, "Stable Extraction of Threshold Voltage Using Transconductance Change Method for CMOS Modeling, Simulation and Characterization," Jpn. J. Appl. Phys. Vol. 43, No. 4B, pp. 1759-1762, Part 1, April 2004. [SCI] DOI : 10.1143/JJAP.43.1759

[96] Kyung Rok Kim, Dae Hwan Kim,  Jong Duk Lee, and Byung-Gook Park, "Coulomb Oscillations Based on Band-to-band Tunneling in a Degenerately Doped Silicon Metal-Oxide-Semiconductor Field-Effect Transistor," Virtual Journal of Nanoscale Science & Technology, Volume 9, No. 16, (APL Vol. 84, pp. 3178-3180), Apr. 2004. [SCI] DOI : 10.1063/1.1707217

[95] Kyung Rok Kim, Dae Hwan Kim, Jong Duk Lee, Byung-Gook Park, "Coulomb Oscillations Based on Band-to-band Tunneling in a Degenerately Doped Silicon Metal-Oxide-Semiconductor Field-Effect Transistor," Appl. Phys. Lett., Vol. 84, No. 16, pp. 3178~3180, Apr. 2004. [SCI] DOI : 10.1063/1.1707217

[94] Cheon An Lee, Sung Hun Jin, Hyuck In Kwon, Il Whan Cho, Jihye Kong, Chang Ju Lee, Myung Won Lee, Jae Woo Kyung, Jong Duk Lee, and Byung-Gook Park, "A High Voltage NMOSFET Fabricated by using a Standard CMOS Logic Process as a Pixel-driving Transistor for the OLED on the Silicon Substrate," Journal of Information Display, Vol. 5, No. 1, pp. 28-33, March, 2004. [SCI] DOI : 10.108/15980316.2004.9651937

[93] Woo Young Choi, Byung Yong Choi, Dong-Soo Woo, Jong Duk Lee, and Byung-Gook Park, "Stable Extraction of Linearity (VIP3) for Nanoscale RF CMOS Devices," IEEE Microwave and Wireless Components Letters, Vol. 14, No 2, pp. 83-85, February 2004. [SCI] DOI : 10.1109/LMWC.2003.818527

[92] Hyuck In Kwon, In Man Kang, Byung-Gook Park, Sang Sik Park, and Jong Duk Lee, "The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures," IEEE Transactions on Electron Devices, Vol. 51, No. 2, pp. 178-184, Feb. 2004. [SCI] DOI : 10.1109/TED.2003.821765

[91] Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Sang Sik Park, Jung Chak Ahn, and Yong Hee Lee, "Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements," Microelectronics Reliability, Vol. 44, No 1, pp. 47-51, Jan. 2004. [SCI] DOI 

[90] Yong Jin Yoon, Hyuck In Kwon, Jong Duk Lee, Byung-Gook Park, Nam Seog Kim, Uk Rae Cho, and Hyun Geun Byun, "Synchronous Mirror Delay for Multiphase Locking," IEEE Journal of Solid-State Circuits, Vol. 39, No. 1, pp. 150-156, Jan. 2004. [SCI] DOI : 10.1109/JSSC.2003.820871

[89] Sung Hun Jin, Jin Wook Kim, Chun An Lee, Byung-Gook Park, and Jong Duk Lee, "Surface-State Modification of OTFT Gate Insulators by Using a Dilute PMMA Solution," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 185-189, January 2004. [SCI] DOI 

[88] Sung Hun Jin, Jae Sung Yu, Chun An Lee, Jin Wook Kim, Byung-Gook Park, and Jong Duk Lee, "Pentacene OTFTs with PVA Gate Insulators on a Flexible Substrate," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 181-184, January 2004. [SCI] DOI 

[87] Euo Sik Cho, Byung-Gook Park, Jong Duk Lee, Hyung Soo Uh, and Sang Jik Kwon, "Effect of Phosphorus Implantation and Subsequent Growth on the Surface Morphologies and the Electrical Properties of Diamond," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 153-156, January 2004. [SCI] DOI : 10.1016/j.tsf.2004.05.103

[86] Ki-Whan Song, Kyung Rok Kim, Jong Duk Lee, Byung-Gook Park, Sang-Hoon Lee, and Dae Hwan Kim, "A SPICE Model of Realistic Single-Electron Transistors and Its Application to Multiple-Valued Logic," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 121-124, January 2004. [SCI] DOI 

[85] Il Hwan Cho, Byung Gook Park, Jong Duk Lee, Tai-su Park, Si Young Choi and Jong Ho Lee, "Body-Tied Double-Gate SONOS Flash (Omega Flash) Memory Device Built on a Bulk Si wafer," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 83-86, January 2004. [SCI] DOI : 10.1109/DRC.2003.1226904

[84] In Man Kang, Hyuck In Kwon, Myung Won Lee, Byung-Gook Park, Jong Duk Lee, Sang Sik Park, Jung Chak Ahn, and Yong Hee Lee, "Characteristics of Conventional STI Process-Related Deep Level Traps in Silicon," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 69-72, January 2004. [SCI] DOI 

[83] Woo Young Choi, Byung Yong Choi, Dong-Soo Woo, Jong Duk Lee, and Byung-Gook Park, "Reverse-Order Source/Drain with Double Offset Spacer Design Optimization for Sub-50-nm Low-Power MOSFETs," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 60-64, January 2004. [SCI] DOI 

[82] Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Woo Suk Hyun, Sang Sik Park, Jung Chak Ahn, and Yong Hee Lee, "Effects of Electrical Stress on the Mid-Gap Interface Trap Density and the Capture Cross Sections Characterized by Pulsed Interface Probing (PIP) Measurements," Journal of Korean Physical Society, Vol. 44, No. 1, pp. 46-49, January 2004. [SCI] DOI

[81] Suk-Kang Sung, Il Han Park, Chang Ju Lee, Yong Kyu Lee, Jong Duk Lee, Byung-Gook Park,Soo Doo Chae, Chung Woo Kim, "Fabrication and Program/Erase Characteristics of 30-nm SONOS Nonvolatile Memory Devices," IEEE Transactions on Nanotechnology, Vol. 2, No. 4, pp. 258-264, Dec. 2003. [SCI] DOI : 10.1109/TNANO.2003.820779

[80] Yong Kyu Lee, Tae Hun Kim, Sang Hoon Lee, Jong Duk Lee and Byung-Gook Park, "Twin-Bit Silicon-Oxide-Nitride-Oxide-Silicon(SONOS) Memory by Inverted Sidewall Patterning (TSM-ISP)," IEEE Transactions on Nanotechnology, Vol. 2, No. 4, pp. 246-252, Dec. 2003. [SCI] DOI : 10.1109/TNANO.2003.820776

[79] Woo Young Choi, Byung Yong Choi, Dong-Soo Woo, Jong Duk Lee, and Byung-Gook Park, "Reverse-Order Source/Drain Formation with Double Offset Spacer (RODOS) for Low-Power and High-Speed Application," IEEE Transactions on Nanotechnology, Vol. 2, No. 4, pp. 210-216, Dec. 2003. [SCI] DOI : 10.1145/871506.871554

[78] Byung-Gook Park, Dae Hwan Kim, Kyung Rok Kim, Ki-Whan Song, Jong Duk Lee, "Single-electron transistors fabricated with sidewall spacer patterning," Superlattices and Microstructures, Vol. 34, No.3-6, pp. 231-239, September-December 2003. [SCI] DOI : 10.1016/j.spmi.2004.03.013

[77] Dong-Soo Woo, Byung Yong Choi, Woo Young Choi, Myeong Won Lee, Jong Duk Lee, and Byung-Gook Park, "30 nm self-aligned FinFET with large source/drain fan-out structure," IEE Electronics Letters, Vol. 39, No. 15, pp. 1154-1155, July 2003. [SCI] DOI : 10.1049/el:20030656

[76] Kyung-Hoon Chung, Woo Young Choi, Suk-Kang Sung, Dae Hwan Kim, Jong Duk Lee, and Byung-Gook Park, "Pattern multiplication method and the uniformity of nanoscale multiple lines," J. Vac. Sci. Technol. B. Vol. 21, No. 4, pp. 1491-1495, July 2003. [SCI] DOI : 10.1116/1.1591737

[75] Euo Sik Cho, Sang Jik Kwon, Hwi Chan Yang, Hyung Soo Uh, Yeo Hwan Kim, Byung-Gook Park and Jong Duk Lee, "Fabrication and characterization of phosphorus-implanted mold-type diamond field-emitter arrays," Thin Solid Films, Vol. 435, No. 1-2, pp. 324~328, July 2003. [SCI] DOI : 10.1016/S0040-6090(03)00342-0

[74] Jaeyoung Oh, Jinsoo Joo, Chun An Lee, Byung Gook Park and Donghwan Kim, "The Influence of Surface-modified ITO by Ion Beam Irradation on the Organic EL Performances," Korean Journal of Materials Research, Vol. 13, No. 3, pp. 191~194, March 2003. [SCI] DOI : 10.374/MRSK.2003.13.3.191

[73] Il Hwan Cho, Byung Gook Park, Jong Duk Lee and Jong Ho Lee, "Nano-Scale SONOS Memory with a Double-Gate MOSFET Structure," Journal of the Korean Physical Society, Vol. 42, No. 2, pp. 233~236, Feb. 2003. 

[72] Euo Sik Cho, Byung-Gook Park, and Jong Duk Lee, Sang Jik Kwon, "Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation," J. Vac. Sci. Technol. B. Vol. 21, No. 1, pp. 603-607, January/February 2003 [SCI] DOI : 10.1116/1.153117

[71] Il Hwan Kim, Jong Duk Lee, Chang Woo Oh, Jae Woo Park, and Byung Gook Park, "Metal-oxide-semiconductor field effect transistor-controlled field emission display," J. Vac. Sci. Technol. B. Vol. 21, No. 1, pp. 519-522, January/February 2003. [SCI] DOI : 10.1116/1.1524134

[70] Jong Duk Lee, Chang Woo Oh, and Byung Gook Park, "Electrical aging of molybdenum field emitters," J. Vac. Sci. Technol. B. Vol. 21, No. 1, pp. 440-444, January/February 2003. [SCI] DOI : 10.1109/IVMC.2001.939677

[69] Dae Hwan Kim, Suk-Kang Sung, Kyung Rok Kim, Jong Duk Lee, and Byung-Gook Park, "Single-Electron Transistors Based on Gate-Induced Si Island for Single-Electron Logic Application," IEEE Transactions on Nanotechnology, Vol. 1, No. 4, pp. 170-175, Dec. 2002. [SCI] DOI 

[68] Sang-Hoon Lee, Dae Hwan Kim, Kyung Rok Kim, Jong Duk Lee, Byung-Gook Park, Young-Jin Gu, Gi-Young Yang, and Jeong-Taek Kong, "A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors," IEEE Transactions on Nanotechnology, Vol. 1, No. 4, pp. 226-232, Dec. 2002. [SCI] DOI

[67] Dong-Soo Woo, Jong-Ho Lee, Woo Young Choi, Byung-Yong Choi, Young-Jin Choi, Jong Duk Lee, and Byung-Gook Park, "Electrical Characteristics of FinFET With Vertically Nonuniform Source/Drain Doping Profile," IEEE Transactions on Nanotechnology, Vol. 1, No. 4, pp. 233-237, Dec. 2002. [SCI] DOI : 10.1109/TNANO.2002.807373

[66] Dae Hwan Kim, Suk-Kang Sung, Kyung Rok Kim, Jong Duk Lee, and Byung-Gook Park, "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire," Virtual Journal of Nanoscale Science & Technology, Volume 6, No. 25, (JVSTb Vol. 20, pp. 1410-1418), Dec. 2002. [SCI] DOI : 10.1116/1.1491551

[65] Yong Kyu Lee, Suk Kang Sung, Jae Seong Sim, Chang Ju Lee, Tae Hun Kim, Jong Duk Lee, Byung Gook Park, Dong Hun Lee and Young Wug Kim, "Multi-Level Vertical-Channel SONOS Nonvolatile Memory Using a Standard SOI Logic Process," Journal of the Korean Physical Society, Vol. 41, No. 6, pp. 908~911, Dec. 2002. [SCI] DOI 

[64] Yong Kyu Lee, Jae Sung Sim, Suk Kang Sung, Chang Ju Lee, Tae Hun Kim, Jong Duk Lee, Byung Gook Park, Dong Hun Lee, and Young Wug Kim, "Multilevel Vertical-Channel SONOS Nonvolatile Memory on SOI," IEEE Electron Device Letters, Vol. 23, No. 11, pp. 664-666, Nov. 2002. [SCI] DOI : 10.1109/VLSIT.2002.1015455

[63] Cheon An Lee, Dong Soo Woo, Hyuck In Kwon, Yong Jin Yoon, Jong Duk Lee, and Byung-Gook Park, "Design of a CMOS On-chip Driver Circuit for Active Matrix Polymer Electroluminescent Displays," Journal of Information Display, Vol. 3, NO. 2, pp 1-5, June, 2002. [SCI] DOI 

[62] Dae Hwan Kim, Suk-Kang Sung, Kyung Rok Kim, Jong Duk Lee, Byung-Gook Park, Bum Ho Choi, Sung Woo Hwang and Doyeol Ahn, "Single-Electron Transistors with Sidewall Depletion Gates on an SOI Nanowire and Their Application to Single-Electron Inverters," Journal of The Korean Physical Society, Vol. 41, No. 4, pp. 505-508, Oct. 2002. [SCI] DOI : 10.3938/jkps.41.505

[61] Woo Young Choi, Byung Yong Choi, Young Jin Choi, Dong-Soo Woo, Suk-Kang Sung, Jong Duk Lee and Byung-Gook Park, "Fabrication of a 30-nm Planar nMOSFETs Based on the Sidewall Patterning Technique," Journal of The Korean Physical Society, Vol. 41, No. 4, pp. 497-500, Oct. 2002. [SCI] DOI 

[60] Young Jin Choi, Byung Yong Choi, Kyung Rok Kim, Jong Duk Lee, and Byung-Gook Park, "A New 50-nm nMOSFET With Side-Gates for Virtual Source-Drain Extensions," IEEE Transactions on Electron Devices, Vol. 49, No. 10, pp. 1833-1835, Oct. 2002. [SCI] DOI : 10.1109/TED.2002.803648

[59] Kyung Rok Kim, Dae Hwan Kim, Suk-Kang Sung, Jong Duk Lee, and Byung-Gook Park, "Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body," IEEE Electron Device Letters, Vol. 23, No. 10, pp. 612-614, Oct. 2002. [SCI] DOI 

[58] Dae Hwan Kim, Suk-Kang Sung, Kyung Rok Kim, Jong Duk Lee, and Byung-Gook Park, "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire," J. Vac. Sci. Technol. B. Vol. 20, No. 4, pp. 1410-1418, July/August 2002. [SCI] DOI : 10.1116/1.1491551

[57] Kyung-Hoon Chung, Suk-Kang Sung, Dae Hwan Kim, Woo Young Choi, Cheon An Lee, Jong Duk Lee and Byung-Gook Park, "Nanoscale Multi-Line Patterning Using Sidewall Structure," Jpn. J. Appl. Phys. Vol. 41, No. 6B, pp. 4410-4414, Part 1, June 2002. [SCI] DOI : 10.1143/JJAP.41.4410

[56] Dae Hwan Kim, Kyung Rok Kim, Suk Kang Sung, Jong Duk Lee, and Byung-Gook Park, "Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor," IEE Electronics Letters, Vol. 38, No. 11, pp. 527~529, May 2002. [SCI] DOI : 10.1049/el:20020345

[55] Jong Duk Lee, Jung Hyun Nam, Hyuck In Kwon and Byung-Gook Park, "Design and Fabrication of the Driving Circuits for One-Chip FED on the Standard CMOS Process," Journal of the Korean Physical Society, Vol. 40, No. 4, pp. 592~594, April 2002. [SCI] DOI : 10.3938/jkps.40.592

[54] Suk-Kang Sung, Dae Hwan Kim, Jae-Sung Sim, Kyung Rok Kim, Yong Kyu Lee, Jong Duk Lee, Soo Doo Chae, Byung Man Kim, and Byung-Gook Park, "Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology," Jpn. J. Appl. Phys. Vol. 41, Part 1, No. 4B, pp. 2606-2610, Apr. 2002. [SCI] DOI : 10.1143/JJAP.41.2606

[53] Kyung Rok Kim, Dae Hwan Kim, Suk-Kang Sung, Jong Duk Lee, Byung-Gook Park, Bum Ho Choi, Sung Woo Hwang, and Doyeol Ahn, "Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire," Jpn. J. Appl. Phys. Vol. 41, Part 1, No. 4B, pp. 2574-2577, Apr. 2002. [SCI] DOI : 10.1143/JJAP.41.2574

[52] Woo Young Choi, Byung Yong Choi, Dong Soo Woo, Young Jin Choi, Jong Duk Lee, and Byung-Gook Park, "Side-Gate Design Optimization of 50 nm MOSFETs with Electrically Induced Source/Drain," Jpn. J. Appl. Phys. Vol. 41, Part 1, No. 4B, pp. 2345-2347, Apr. 2002. [SCI] DOI : 10.1143/JJAP.41.2345

[51] Dae Hwan Kim, Suk-Kang Sung, Kyung Rok Kim, Jong Duk Lee, Byung-Gook Park, Bum Ho Choi, Sung Woo Hwang, Doyeol Ahn, "Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic," IEEE Transactions on Electron Devices, Vol. 49, NO. 4, pp. 627-635, Apr. 2002. [SCI] DOI : journal.html/

[50] Dong-Soo Woo, Boo Sik Park, Jong Duk Lee, and Byung-Gook Park, "Fabrication of a 0.2um Ultra-Thin SOI Inverted Sidewall Recessed Channel with Single-Type Polysilicon Gate," Journal of the Korean Physical Society, Vol. 40, No. 1, pp. 68~71, Jan. 2002. [SCI] DOI

[49] Jong Duk Lee, Yong Jin Yoon, Cheol Shin Kwak, and Byung-Gook Park, "Synchronous Mirror Delay for Zero- and Multi-Phase Locking," Journal of the Korean Physical Society, Vol. 40, No. 1, pp. 87~89, Jan. 2002. [SCI] DOI : 10.1109/JSSC.2003.820871

[48] Suk-Kang Sung, Jae-Sung Sim, Dae Hwan Kim, Jong Duk Lee, and Byung-Gook Park, "Nanoscale-Wire Patterning Using Side-Wall and Quantum Dot Memory Device Fabrication," Journal of the Korean Physical Society, Vol. 40, No. 1, pp. 128~131, Jan. 2002. [SCI] DOI 

[47] Kyung Rok Kim, Dae Hwan Kim, Jong Duk Lee, and Byung-Gook Park, "Characteristics of Silicon-On-Insulator Single-Electron Transistors with Electrically Induced Tunnel Barriers," Journal of the Korean Physical Society, Vol. 40, No. 1, pp. 140~144, Jan. 2002. [SCI] DOI 

[46] In-Ho Nam, Jae Sung Sim, Sung In Hong, Byung-Gook Park, Jong Duk Lee, Seung-Woo Lee, Man-Sug Kang, Young-Wug Kim, Kwang-Pyuk Suh, Won Seong Lee, "Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors," IEEE Transactions on Electron Devices, Vol. 48, NO. 10, pp. 2310-2316, Oct. 2001. [SCI] DOI : 10.1109/16.95447

[45] Jong Duk Lee, Chang Woo Oh, Il Hwan Kim, Jae Woo Park and Byung Gook Park , ?€?Emission Characteristics of 0.7" Monochrome MOSFET-Controlled Field Emission Displays(MCFEDs)in High Vacuum Chamber?€?, Journal of Information Display, Vol. 2, NO. 3, pp 66-71, September, 2001. [SCI] DOI : 10.108/15980316.2001.9651869

[44] Byung Yong Choi, In-Ho Nam, Jong Duk Lee and Byung-Gook Park, "Sub-0.1-um NMOSFET with 12-nm n+-p Junction Using 5-keV As2+ Ion Implantation," Journal of The Korean Physical Society, Vol.39, No.1, pp. 72-75, July 2001. #VALUE!

[43] Jong Duk Lee, Sung Hun Jin, Byung Chang Shim, Byung-Gook Park, "A Formation of Co Silicide on Silicon Field Emitter Arrays by Electrical Stress", IEEE Electron Device Letters, Vol. 22, No. 4, pp. 173-175, April 2001. [SCI] DOI 

[42] Byung Yong Choi, Suk Kang Sung, Byung-Gook Park, and Jong Duk Lee ?€?70nm NMOSFET Fabrication with 12nm n+-p Junctions Using As2+ Low Energy Implantation?€?, Jpn. J. Appl. Phys., Vol. 40, Part 1, No. 4B, pp. 2607~2610, April 2001. [SCI] DOI

[41] Jong Duk Lee, Yong Jin Yoon, Kyoung Hwa Lee and Byung-Gook Park, ?€?Application of Dynamic Pass-Transistor Logic to an 8-Bit Multiplier," Journal of The Korean Physical Society, Vol.38, No.3, pp. 220-223, March 2001. [SCI] DOI 

[40] Jong Duk Lee, Byung Chang Shim and Byung Gook Park, ?€?Co Silicide Field Emitter Arrays Formed from Ti/Co Layers?€?, Journal of The Korean Physical Society, Vol.38, No.3, pp210-214, March 2001. #VALUE!

[39] Jong Duk Lee, Sung Hun Jin, Byung Chang Shim and Byung Gook Park, "Co Silicide Formation on Single Crystal Silicon Field Emitter Arrays by Using Electrical Stress," Journal of The Korean Physical Society, Vol.38, No.3, pp. 203-206, March 2001. [SCI] DOI

[38] Inho Nam, Sung In Hong, Jae Sung Sim, Byung-Gook Park, and Jong Duk Lee, Seung Woo Lee, Man-Suk Kang, Young-??? Kim, Kwang-Pyuk Suh, and Won-Seong Lee, "Nitrogen profile effects on the growth rate of oxides grown on nitrogen-implanted silicon", Journal of Vacuum Science and Technology B, Vol. 19, No. 1, pp. 299-304, Jan/Feb. 2001 [SCI] DOI : 10.1116/1.134201

[37] Jong Duk Lee, Byung Chang Shim, Byung-Gook Park, "Silicide Application on Gated-Crystal, Polycrystalline and Amorphous silicon FEAs - Part II: Co Silicide", IEEE Transactions on Electron Devices, Vol. 48, NO. 1, January, 2001. [SCI] DOI 

[36] Jong Duk Lee, Byung Chang Shim, Byung-Gook Park, "Silicide Application on Gated-Crystal, Polycrystalline and Amorphous silicon FEAs - Part I: Mo Silicide", IEEE Transactions on Electron Devices, Vol. 48, NO. 1, January, 2001. [SCI] DOI 

[35] Jong Duk Lee, Byung Chang Shim, Byung Gook Park, and Sang Jik Kwon, "Molybdenum and Cobalt Silicide Field Emitter Arrays," Journal of Information Display, Vol. 1, NO. 1, pp. 63-69, December, 2000. [SCI] DOI : journals/IJCA

[34] Yeong Taek Lee, Dong Soo Woo, Jong Duk Lee, and Byung Gook Park, "Threshold Voltage Reduction Model for Buried Channel PMOSMETs Using Quasi-2-D Poisson Equation," IEEE Transactions on Electron Devices, Vol. 47, No. 12, pp 2326-2333,December, 2000. [SCI] DOI

[33] Dae Hwan Kim, Jong Duk Lee, and Byung-Gook Park, "Room Temperature Coulomb Oscillation of a Single Electron Switch with an Ectrically Formed Quantum Dot and Its Modeling," Jpn. J. Appl. Phys., Vol. 39, Part 1, No. 4B, pp. 2329~2333, April, 2000. [SCI] DOI : 10.1143/JJAP.39.2329

[32] Tae-Sik Yoon, Jang-Yeon Kwon, Dong-Hoon Lee, Ki-Bum Kim, Seok-Hong Min, Dong-Hyuk-Chae, Dae Hwan Kim, Jong Duk Lee, and Byung-Gook Park, "High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2,"J. of Applied Physics, Vol. 87, No. 5, pp2449~2453, March, 2000. [SCI] DOI : 10.1063/1.3722

[31] In-Ho Nam, Sung-In Hong, Jae Sung Sim, Byung-Gook Park, Jong Duk Lee, "Annealing Effects on QBD of Ultra-Thin Gate Oxide Grown on Nitrogen Implanted Silicon," J. of KITE, Vol.37-SD, pp.6-13, March, 2000 [SCI] DOI

[30] In Ho Nam, Sung In Hong, Jae Sung Sim, Byung Gook Park and Jong Duk Lee, "Ultra-Thin Gate Oxide Grown on Nitrogen Implanted Silicon," JKPS, Vol. 35, pp. s788-s790, December, 1999. [SCI] DOI 

[29] Dong Hyuk Chae, Dae Hwan Kim, Yong Jae Lee, Chang Hyun Kwak, Jong Duk Lee ,Byung Gook Park, Tae Sik Yoon, Jang Yeon Kwon, Ki Bum Kim, Kyoung Ryol Kim, Noe Jung Park, Hyun Sik Yoon and Seok Jae Jeong, "Nanocrystal Memory Cell Using High-Density Si 0.73Ge 0.27 Quantum Dot Array," JKPS, Vol. 35, pp. s995-s998, December, 1999. [SCI] DOI 

[28] Suk Kang Sung, Young jin Choi, Jong Duk Lee and Byung Gook Park, "Realization of Ultra-Fine Lines Using Sidewall Structures and Their Application to nMOSFETs," JKPS, Vol. 35,pp. s693-s696,December,1999. [SCI] DOI 

[27] Jong Duk Lee, Nam Seog Kim, Il Hwan Kim and Byung Gook Park, "Fabrication of Silicon Field Emitter Arrays Combined with HVTFT at Low Temperature," JKPS, Vol. 35, pp. s1102-s1105, December, 1999. [SCI] DOI 

[26] Yeon Chel Heo, Sang Tae Chung, Chan Kwang Park, Jeong Ho Lee, Yo Hwan Koh, Byung Gook Park and Jong Duk Lee, "Dependence of Contact Resistance on Substrate Doping and Impact of Mixed Ion Implantation," Jpn. J. Appl. Phys., Vol. 38, Part 1, No. 10, pp. 5783-5787, October, 1999. [SCI] DOI : article/10.1143

[25] Jong Duk Lee, Byung Chang Shim, Hyung Soo Uh, Byung Gook Park, "Surface Morphology and I-V Characteristics of Single-Crystal, Polycrystalline, and Amorphous Silicon FEA's,"  IEEE Electron Device Letters, Vol. 20, No. 5, pp. 215-218, May, 1999. [SCI] DOI : 10.1109/55.761019

[24] Jong Duk Lee, Byung Chang Shim, Euo Sik Cho and Byung Gook Park, "Surface Morphology and I-V Characteristics of Single Crystal, Polycrystalline and Amorphous Silicon FEAs," J. Korean Physical Society, Vol. 33, pp. s401-s405, November, 1998. [SCI] DOI : Journal/ArticleDetail

[23] Jong Duk Lee, Hyung Soo Uh and Byung Gook Park, "A Study on the Surface Structure and Electron Emission Characteristics of Gated Polycide Field Emitter Arrays", J. Korean Physical Society, Vol. 33, pp. s396-s400, November, 1998. 

[22] Dae Hwan Kim, Dong Hyuk Chae, Jong Duk Lee and Byung Gook Park, "Silicon Single Electyron Transistors with a Dual Gate Structure," J. Korean Physical Society, Vol. 33, pp. s278-s282, November, 1998. [SCI] DOI 

[21] Yeong Taek Lee, Dong Soo Woo, Jong Duk Lee and Byung Gook Park, "Impact of Incomplete Ionization on Indium Doped Buried Channel pMOSFETs", J. Korean Physical Society, Vol. 33, pp. s200-s203, November, 1998.

[20] Jong Tae Park, Dae Nam Ha, Seoung Jun Jang, Chong Gun Yu, Byung Gook Park, and Jong Duk Lee, "Hot Carrier Effects in Extreme Submicrometer CMOS," Journal of Electrical Engineering and Information Science, Vol. 3, No. 4, pp.521-526, August, 1998. [SCI] DOI 

[19] Hyung Soo Uh, Byung Gook Park, and Jong Duk Lee, "Improvement of Electron Emission Efficiency and Stability by Surface Application of Molybdenum Silicide onto Gated Poly-Si Field Emitters," IEEE Electron Device Letters, Vol. 19, No. 5, pp.167-170, May, 1998. [SCI] DOI : 10.1109/55.669737

[18] Hyouk Man Kwon, Yeong-Taek Lee, Byung-Gook Park, and Jong Duk Lee, "Dual-Gate Surface Channel 0.1 um CMOSFETs," Journal of Electrical Engineering and Information Science, Vol. 3, No. 2, pp.261-266, April, 1998. [SCI] DOI

[17] Chang Woo Oh, Chun Gyoo Lee, Byung Gook Park, Jong Duk Lee, and Jong Ho Lee, "Fabrication of metal field emitter arrays for low voltage and high current operation," Journal of Vacuum Science and Technology B, Vol. 16, No. 2, pp. 807-810, Mar/Apr 1998. [SCI] DOI : 10.1116/1.58991

[16] Hyung Soo Uh, Byung Gook Park, and Jong Duk Lee, "Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance," Journal of Vacuum Science and Technology B, Vol. 16, No. 2, pp. 866-870, Mar/Apr 1998. [SCI] DOI : 10.1116/1.589922

[15] Jeongho Lyu, Byung-Gook Park, Kukjin Chun, and Jong Duk Lee, "Reduction of Hot-Carrier Generation in 0.1- um Recessed Channel nMOSFET with Laterally Graded Channel Doping Profile," IEEE Electron Device Letters, Vol. 18, No. 11, pp.535-537, November, 1997. [SCI] DOI : 10.1109/55.641437

[14] Chang-Woo Oh, Chun-Gyoo Lee, Byung-Gook Park, Jong-Duk Lee, and Jong-Ho Lee, "Fabrication of Novel Metal Field Emitter Arrays(FEAs) Using Isotropic Silicon Etching and Oxidation," Journal of Electrical Engineering and Information Science, Vol. 2, No. 6, pp.212-216, October, 1997. [SCI] DOI

[13] Jeongho Lyu, Byung-Gook Park, Kukjin Chun, and Jong Duk Lee, "Suppression of Short Channel Effects in 0.1um Si nMOSFETs with ISRC Structure," Journal of KITE, Vol. 34-D, No. 8, pp.35-40, August, 1997. 

[12] Il Hwan Kim, Chun Gyoo Lee, Yeo Hwan Kim, Byung Gook Park and Jong Duk Lee, "Fabrication of metal field emitter arrays on polycrystalline silicon," Journal of Vacuum Science and Technology B, Vol. 15, No. 2, pp. 468-471, Mar/Apr, 1997. [SCI] DOI : 10.1116/1.589601

[11] Chun Gyoo Lee, Byung Gook Park and Jong Duk Lee, "Fabrication and characterization of volcano-shaped field emitters surrounded by planar gates," Journal of Vacuum Science and Technology B, Vol. 15, No. 2, pp. 464-467, Mar/Apr, 1997. [SCI] DOI : 10.1116/1.5896

[10] Yeong-Taek Lee, Ki-Whan Song, Byung-Gook Park and Jong Duk Lee, "Indium Doped nMOSFETs and Buried Channel pMOSFETs with n+ Polysilicon Gate," Jpn. J. Appl. Phys., Vol. 36, Part. 1, No. 3B, pp. 1341-1345, March, 1997. [SCI] DOI : article/10.1143

[9] Ki Whan Song, Byung-Gook Park, and Jong Duk Lee, "0.15um Gate Length nMOSFETs with Indium Implanted Channel," KITE Journal of Electronics Engineering, Vol. 7, No. 4, pp. 18-23, Dec., 1996. [SCI] DOI : Journal/ArticleDetail

[8] Kyung Nam Park, Young Jin Choi, Byung Gook Park, and Jong Duk Lee, "The Dependence of Hot-Electron Immunity of Ultra-Thin Gate Oxide on the Amount of TCA Incorporation," KITE Journal of Electronics Engineering, Vol. 7, No. 4, pp. 13-17, Dec., 1996. [SCI] DOI : Journal/ArticleDetail

[7] Jong Tae Park, Sung Jun Jang, Chong Gun Yu, Byung Gook Park, and Jong Duk Lee, "New Experimental Findings on Hot Carrier Effects in Deep Submicrometer Surface Channel PMOS," Journal of Microelectron. Reliab., Vol. 36, No. 11/12, pp. 1659-1662, Nov/Dec., 1996. [SCI] DOI : 10.1016/0026-2714(96)00167-9

[6] Young Jin Choi, Byung-Gook Park, and Jong Duk Lee, "Characteristics of 0.1 nMOSFETs with Different Channel Doping and Gate Oxide Thickness," KITE Journal of Electronics Engineering, Vol. 7, No. 3, pp. 28-33, Sep., 1996. [SCI] DOI

[5] Chun Gyoo Lee, Ho Young Ahn, Byung Gook Park, and Jong Duk Lee, "New Approach to Manufacturing Field Emitter Arrays with Sub-Half-Micron Gate Apertures," J. of Vacuum Science and Technology B, Vol. 14, No. 3, pp. 1966-1969, May/Jun., 1996. [SCI] DOI : 10.1116/1.588965

[4] Sung Ho Jo, Byung Gook Park, and Jong Duk Lee, "Analysis of Field Emission Characteristics of Hydrogen-Adsorbed Silicon Surface," Applied Physics Letter, Vol. 68, No. 16, pp. 2234-2236, Apr., 1996. [SCI] DOI : 10.1063/1.115869

[3] Jeongho Lyu, Byung-Gook Park, Kukjin Chun, and Jong Duk Lee, "A Novel 0.1um MOSFET Structure with Inverted Sidewall and Recessed Channel," IEEE Electron Device Letters, Vol. 17, No. 4, pp. 157-159, Apr., 1996. [SCI] DOI : 10.1109/55.485159

[2] Chun Gyoo Lee, Byung Gook Park, and Jong Duk Lee, "A New Fabrication Process of Field Emitter Arrays with Submicron Gate Apertures Using Local Oxidation of Silicon," IEEE Electron Device Letters, Vol. 17, No. 3, pp. 115-117, Mar., 1996. [SCI] DOI : 10.1109/55.485185

[1] Yeon Cheol Heo, Woo-Hyeong Lee, Byung Gook Park, Young-June Park, and Jong Duk Lee, "A Study on the Scale-Down of 0.1 Surface-Channel GR-pMOSFET," J. of KITE, Vol. 31-A, No. 11, pp. 131-137, Nov., 1994. [SCI] DOI