Patent

US12,073,878 (October 20, 2021, August 27, 2024) Kee-Won Kwon, Sewon Yun, Sangwon Kim "Processing element and electronic device including processing element"

US10,395,719 (June 12, 2018, August 27, 2019) Cheol Kim, Kee-Won Kwon, Ji-Su Min, Rak-Joo Sung, Sung-gi Ahn, " Memory device driving matching lines according to priority”

US10,482,962 (May 15, 2018, November 19, 2019) Cheol Kim, Hyun-Suk Kang, Kee-Won Kwon, Rak-Joo Sung, Sung-Gi Ahn, “TCAM device and operating method thereof,”

US 9,548,114(October 31, 2013(14/068,382) 2017/1/17) Jong-Min Baek, Dong-Jin Seo, Kee-Won Kwon, “Resistive semiconductor memory capable of performing incremental step pulse programming (ISPP) based on digital code values of memory cells”

US 9,424,916 (June 26, 2017(14/109,109) 2016/8/23) Keewon Kwon, Jongmin Baek, Dongjin Seo, "Semiconductor memory device and method for reading the same using a memory cell array including resistive memory cells to perform a single read command"

US 9,659,641 B2 (March 17, 2015(14/660,530) 2017-05-23) Chan-kyung Kim and Kee-won Kwon, "On-chip resistance measurement circuit and resistive memory device including the same”

US 9,548,114(Jan 17, 2017) 14/068,382 (Oct 31, 2013) Jong-Min Baek, Dong-Jin Seo, Kee-Won Kwon, “Semiconductor memory devices, verify read method and system”

US9385730 (May 8 2014, July 5 2016) Junhan BAE, Kee-won Kwon, Kyoungho KIM, Jung Hoon CHUN, Youngsoo Sohn, Seok Kim, “Phase-rotating phase locked loop and method of controlling operation thereof”

US9330743 (April 3 2015, May 3, 2016) Chan-kyung Kim, Kee-won Kwon, Su-a Kim, Chul-Woo Park, Jae-Youn Youn, “Memory cores of resistive type memory devices, resistive type memory devices and method of sensing data in the same”

US 14/109,109 (Dec 17, 2013) Jong-Min Baek, Dong-Jin Seo, Kee-Won Kwon, “Semiconductor memory devices, verify read method and system”

US2011/0049597 (2011. 03. 03) Ji-hong Kim and Kee-won Kwon, “Non-Volatile Memory Device”

US8,050,087 (November 1, 2011) Ju-hee Park, Jae-wong Hyun, Kyoung-lae Cho, Yoon-dong Park, Seung-hoon Lee, Kee-won Kwon, “Non-volatile memory device and method of operating the same”

US7,898,893 (March 1, 2011) Jaechul Park, Keewon Kwon, Youngsoo Park, Seunghoon Lee, Seungeon Ahn, “Multi-layered memory devices”

US2010/0085821 (2010. 04. 08) Seungeon Ahn, Keewon Kwon, Jaechul Park, Youngsoo Park, Myoungjae Lee, “Operation Method of Non-Volatile Memory”

US2009/0283763 (2009. 11. 19) Jaechul and Keewon Kwon, “Transistors, Semiconductor Devices and Methods of Manufacturing the same”

US7,618,186 (November 17, 2009) Duk-Min Kwon, Kee-Won Kwon, “Self-Calibrating Temperature Sensors and Methods Thereof”

US7,477,563 (January 13, 2009) Uk-Song Kang, Kee-Won Kwon, “Dynamic Random Access Memory Device and Associated Refresh Cycle”

US7,457,181 (November 25, 2008) Hoon Lee, Kee-Won Kwon, “Memory Device and Method of Operating the Same”

US7,286,415 (October 23, 2007) Kee-Won Kwon, “Semiconductor Memory Devices having Dual Port Mode and Methods of Operating the Same”

US7,259,592 (August 21, 2007) Seung-Hoon Lee, Kee-Won Kwon, Jung-Hwan Choi, “Output Drivers having Adjustable Swing Widths during Test Mode Operation”

US2007/0133331 (2007. 06. 14) Duk-Ha Park, Kee Won Kwon “Device and Method for Reducing Refresh Current Consumption”

US7,199,632 (April 3, 2007 ) Byung-Kwan Chun, Kee-Won Kwon, “Duty Cycle Correction Circuit for Use in a Semiconductor Device”

US7,199,623 (April 3, 2007) Kee-Won Kwon, “Method and Apparatus for Providing a Power-On Reset Signal”

US2006/0291313 (2006.12. 28) Kee-Won Kwon, “Local Sense Amplifier and Semiconductor Memory Device having the Same”

US7,145,493 (December 05, 2006 ) Kee-Won Kwon, “Digital-to-analog converter (DAC) circuits using different currents for calibration biasing and methods of operating same”

US6,980,048 (December 27, 2005 ) Kee-Won Kwon, “Voltage Generating Circuit Capable of Supplying Stable Output Voltage Regardless of External Input Voltage”

US6,914,461 (July 5, 2005) Kee-Won Kwon, “Power-On Reset Circuits including first and second signal generators and related methods”

US6,882,561 (April 19, 2005), Kee-Won Kwon and Su-Jin Ahn, “Semiconductor Memory Device Comprising Memory Having Active Restoration Function”

US6,879,527 (April 12, 2005), Kee-Won Kwon and Youn-Cheol Kim, “Semiconductor Memory Device with Structure Providing Increased Operating Speed”

US5,834,348(Nov. 10, 1998); Kee-Won Kwon and Chang-Seok Kang, “Method for manufacturing a semiconductor device having a ferroelectric capacitor” 

US5,796,133(Aug. 18, 1998); Kee-Won Kwon and Chang-Seok Kang, “Semiconductor device capacitor having lower electrodes separated by dielectric spacer material” 

US5,552,337(Dec. 30, 1997); Kee-Won Kwon and Chang-Seok Kang, “Method for manufacturing a semiconductor memory device having a tantalum oxide film” 

UK2,285,377(March 26, 1997); Jae-Hong Ko, Yong-Bin Sun, Kee-Won Kwon, and Chang-Seok Kang, “Semiconductor Device and a Manufacturing Method Therefor” 

US5,195,018(March 16, 1993); Kee-Won Kwon and Youngwuk Kim, “High dielectric constant capacitor and method for manufacturing the same”