UHV Cluster System

Description (clockwise from the left)

Analytical Module

The analytical module is equipped with a number of surface sensitive characterization methods listed below. The module is integrated with the deposition and annealing modules to enable surface/interface analysis throughout the growth process.

• Monochromatic X-ray Photoelectron Spectroscopy
  • Automated angle resolved depth profiling
  • 500 mm Rowland Circle
  • 7 channel detector
• High Intensity Ultraviolet Photoelectron Spectroscopy
• Auger Electron Spectroscopy (scanning and static)
• Low Energy Ion Scattering
• Differentially pumped 5keV Ar ion source (PHI FIG-5)
  • Precision manipulator
  • Substrate size flexible (up to 100 mm)
  • Sample Heating/cooling
  • Sample azimuthal rotation for Ar ion depth profiling
  • Dual loadlock (100 mm wafers or 25mm samples)

Sputter Module

The sputter module is equipped with a four RF magnetrons in a confocal geometry for conductive or insulating film deposition on 100 mm substrates. The module is configured to admit up to 4 gasses for reactive sputtering applications. Substrate heating (to 1000 C, in O₂) and rotation are also available. A 1000 l/s turbo pump and a Ti sublimation pump enables a base pressure in the 10^-10 mbar regime, if needed. Film thickness is monitored with a quartz-crystal microbalance.

The module is integrated with the deposition and annealing modules to enable the control of interfaces throughout the growth process.

Annealing Module

The annealing module is configured to admit up to 4 gasses for post-deposition annealing treatments. Substrate heating (to 700 C, in 1 atm. of O₂) is accomplished with a halogen lamp assembly (AJA International). Wafers can also be exposed to UV light for UV/O₃ exposures in an adjacent chamber.

The module is integrated with the deposition and annealing modules to enable the control of interfaces throughout the growth process.

PEALD Module

The plasma-enhances atomic layer deposition module consists of a Picosun R-200 Advanced ALD tool integrated with a loadlock/buffer chamber to enable contamination control to the UHV "backbone" transfer tube. The hot wall reactor with deposition temperature control up to 350 C accommodates 6 precursor sources as well as gas inlets. The inductively coupled plasma source also has 4 gas inlets and is capable of delivering up to 3KW of power. The tool can also accommodate a spectroscopic ellipsometer to enable in-situ monitoring of deposition. The configuration enables in-situ studies of ALD deposition on a variety of substrates through the interconnected UHV transfer tube.

PVD Module

The physical vapor deposition module is equipped with 2 four-pocket 8cc electron-beam evaporation sources (MBE Komponent) for metal film deposition on 100 mm substrates. A low-temperature effusion cell for organic thin film deposition is also included. Additionally, a hydrogen cracker cell enables surface preparation of substrates. The chamber has several integral cooling shrouds for control of the ambient in the presence of the various sources.

The module is integrated with the deposition and annealing modules to enable the control of interfaces throughout the growth process.

MBE Module

The molecular beam epitaxy module is equipped with two 100cc electron-beam evaporation sources (MBE Komponent) currently configured for Si and Ge growth on 100 mm substrates. These e-beam sources are extensively shielded with Si plates to assure purity of the films deposited. Doping effusion cells for boron and phosphorous are also included. The chamber has several integral cooling shrouds for control of the ambient in the presence of the various sources. Source shutters are computer controlled and the Si or Ge beam flux is monitored utilizing a quadrupole mass spectrometer in a cross-beam geometry. Film growth epitaxial quality is monitored with a 30keV Staib RHEED source. The substrate manipulator provides heating to 1200 C and rotation during growth.

The module is integrated with the deposition and annealing modules to enable the control of interfaces throughout the growth process.