Patents
Patents Issued as Inventor and Co-inventor - R.M.Wallace
Citations as of August 2021: >2700
48. 11,081,590 (2021) Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material: W-E. Wang, M. S. Rodder, R. M. Wallace, X. Qin
47. 10,475,930 (2019) Method of forming crystalline oxides on III-V materials: W-E. Wang, M. S. Rodder, R. M. Wallace, X. Qin
46. 9,812,568 (2017) Ionic Barristor: K. Cho, Y. Nie, S. Hong, R. M. Wallace
45. 8,461,028 (2013) Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantation: L. Colombo, R.M. Wallace, and R. Ruoff
44. 8,309,438 (2012) Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantation: L. Colombo, R.M. Wallace, and R. Ruoff
43. 7,288,171 (2007) Method for using field emitter arrays in chemical and biological hazard mitigation and remediation: B.E.Gnade and R.M.Wallace
42. 7,115,461 (2006) High permittivity silicate gate dielectric: J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
41. 7,030,038 (2006) Low Temperature Method for forming a thin, uniform oxide: G.D. Wilk, R.M.Wallace and B.P.S.Brar
40. 6,933,235 (2005) Method for removing contaminants from a substrate: M. A. Quevedo-Lopez, R.M.Wallace, M. El-Bouanani, and B.E.Gnade
39. 6,897,105 (2005) Method of forming metal oxide gate structures and capacitor electrodes: G.D.Wilk; R.M.Wallace; J.M. Anthony; and P. McIntyre
38. 6,841,439 (2005) High permittivity silicate gate dielectric: J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
37. 6,784,507 (2004) Gate Structure and Method: R.M.Wallace and B.E.Gnade
36. 6,730,977 (2004) Lower temperature method for forming high quality silicon-nitrogen dielectrics: G.D.Wilk, J.M.Anthony, Y.Wei, and R.M.Wallace
35. 6,624,944 (2003) Fluorinated coating for an optical element: R.M.Wallace, M.W.Cowens and S.A.Henck
34. 6,613,698 (2003) Low temperature methods for forming high quality silicon-nitrogen dielectrics: G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
33. 6,552,388 (2003) Hafnium Nitride Gate Dielectric: G.D.Wilk and R.M.Wallace
32. 6,468,856 (2002) High charge storage density integrated circuit capacitor: R.M.Wallace, G.D.Wilk, M.Anthony, D-L. Kwong
31. 6,436,801 (2002) Hafnium Nitride Gate Dielectric: G.D.Wilk and R.M.Wallace
30. 6,420,729 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics: R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
29. 6,335,238 (2002) Integrated dielectric and method: S.V.Hanttangady, R.M.Wallace, B.E.Gnade and Y.Okuno
28. 6,291,867 (2001) Zirconium and/or hafnium silicon-oxynitride gate dielectric: R.M.Wallace, R.A.Stolz and G.D. Wilk
27. 6,291,866 (2001) Zirconium and/or hafnium oxynitride gate dielectric: R.M.Wallace, R.A.Stolz and G.D. Wilk
26. 6,277,681 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics: R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
25. 6,274,510 (2001) Low temperature methods for forming high quality silicon-nitrogen dielectrics: G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
24. 6,258,637 (2001) Method for thin film deposition on single-crystal semiconductor substrates: G.D. Wilk, Y.Wei and R.M.Wallace
23. 6,245,606 (2001) Low Temperature method for forming a thin, uniform layer of aluminum oxide: G.D. Wilk and R.M.Wallace
22. 6,159,829 (2000): Memory device using movement of protons: W. L. Warren, K.L.Vanheusden, D.M.Fleetwood, R.A.B.Devine, L.B.Archer, G.A.Brown, R.M.Wallace
21. 6,150,242 (2000): Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode: J.P.Van der Wagt, G.D.Wilk and R.M.Wallace
20. 6,143,634 (2000): Semiconductor process with deuterium predominance at high temperature: R.M.Wallace and P.J.Chen
19. 6,140,243 (2000): Low temperature process for post-etch defluoridation of metals: R.M.Wallace, P.J.Chen, S.C.Baber, S.A.Henck
18. 6,071,751 (2000): Deuterium Sintering with Rapid Quenching: R.M.Wallace and K.C.Harvey
17. 6,040,230 (2000): Method of forming a nano-rugged silicon-containing layer J.M.Anthony, R.M.Wallace, Y.Wei and G.D.Wilk
16. 6,024,801 (2000): Method of cleaning and treating a semiconductor device including a micromechanical device: R.M.Wallace and M.A.Douglas
15. 6,020,247 (2000): Method for thin film deposition on single-crystal semiconductor substrates: G.D.Wilk, Y.Wei and R.M.Wallace
14. 6,020,243 (2000): Zirconium and/or Hafnium Silicon-Oxynitride Gate Dielectric: R.M.Wallace, R.A.Stolz and G.D.Wilk
13. 6,013,553 (2000): Zirconium and/or Hafnium Oxynitride Gate Dielectric: R.M.Wallace, R.A.Stolz and G.D.Wilk
12. 5,830,532 (1998): Method to Produce Ultrathin Porous Silicon-Oxide Layer: S.Tang, R.M.Wallace, and Y.Wei
11. 5,689,151 (1997): Anode plate for Flat Panel Display having integrated getter: R.M.Wallace, J.M.Anthony, C.-C.Cho, B.E. Gnade
10. 5,614,785 (1997): Anode plate for Flat Panel Display having silicon getter: R.M.Wallace, B.E.Gnade and W.P.Kirk
9. 5,610,438 (1997): Micro-mechanical device with non-evaporable getter: R.M.Wallace and D.A.Webb
8. 5,606,177 (1997): Silicon oxide resonant tunneling diode structure: R.M.Wallace and A. C. Seabaugh
7. 5,523,878 (1996): Self-Assembled Monolayer Coating for Micro-Mechanical Devices: R.M.Wallace, D.A.Webb and B.E.Gnade
6. 5,520,563 (1996): Method of making a field emission device anode having an integrated getter: R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
5. 5,512,374 (1996): PFPE Coatings for Micro-mechanical Devices: R.M.Wallace, S.A.Henck and D.A.Webb
4. 5,482,564 (1996): Method of Unsticking Components of Micro-mechanical Devices: M.A.Douglas and R.M.Wallace
3. 5,453,659 (1995): Anode plate for Flat Panel Display having integrated getter: R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
2. 5,352,330 (1994): Process for Producing Nanometer-Size Structures on Surfaces Using Electron Beam Induced Chemistry through Electron Stimulated Desorption: R.M.Wallace
1. 5,316,793 (1994): Directed Effusive Beam Atomic Layer Epitaxy System and Method: R.M.Wallace and B.E.Gnade