Publications

Publications (Peer Reviewed Journals)

2024

1. (348) X. Wang, Y. Hu, S-Y. Kim, K. Cho, and R. M. Wallace, "Mechanism of Fermi Level Pinning for Molybdenum Dichalcogenide," ACS Applied Materials and Interfaces, accepted (2024); https://doi.org/10.1021/acsami.3c18332 

2023

2. (347) X. Wang, Y. Hu, S-Y. Kim, R. Addou, K. Cho, and R. M. Wallace, "Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides," ACS Nano, 17(20), 20353-65 (2023); https://doi.org/10.1021/acsnano.3c06494 

3. (346)  R. Hawkins, X. Wang, N. Moumen, R. M. Wallace and C.D. Young, "Impact of Process Anneals on High-k/ β-Ga2O3 Interfaces and Capacitance," Journal of Vacuum Science and Technology A, 41(2), 023203 (2023); https://doi.org/10.1116/6.0002264 

2022

4. (345) Z. Feng, X. Qin, X. Chen, Z. Li,R. Huang, Y. Shen, D. Ding, Y. Wang, M. Jing, Y. Cui, A. Dingsun, H. Liu, H. Dong, and R.M. Wallace, "In situ isotope study of indium diffusion in InP/Al2O3 stacks," Applied Physics Letters, 120, 032103 (2022); https://doi.org/10.1063/5.0069679 .

2021

5. (344) T. Xie, Q. Wang, R. M. Wallace, C. Gong, "Understanding and Optimization of Graphene Gas Sensors," Applied Physics Letters, 119, 013104 (2021); https://doi.org/10.1063/5.0057066 .

6. (343) E. Coleman, G. Mirabelli P. Bolshakov, P. Zhao, E. Caruso, F. Gity, S. Monaghan, K. Cherkaoui, V. Balestra, R.M. Wallace, C.D. Young, R. Duffy, P.K. Hurley, "Investigating interface states and oxide traps in the MoS2/oxide/Si system, Solid State Electronics, 186, 108123 (2021); https://doi.org/10.1016/j.sse.2021.108123.

7. (342)  A. D'Achille, R. M. Wallace and J. L. Coffer, "Morphology-Dependent Fluorescence of Europium-Doped Cerium Oxide Nanomaterials," Nanoscale Advances, 3, 3563 (2021); https://doi.org/10.1039/D1NA00096A

8. (341) X. Wang, S.Y.Kim, R.M.Wallace, “Interface chemistry and band alignment study of Ni and Ag contacts on MoS2,” ACS Applied Materials and Interfaces, 13 (13), 15802 (2021); http://doi.org/10.1021/acsami.0c22476

9. (340) C.M.Smyth, G. Zhou, A.T. Barton, R.M.Wallace, C.L.Hinkle, "Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen Removal of the Native Tellurium Oxide," Advanced Materials Interfaces, 2002050 (2021); https://doi.org/10.1002/admi.202002050

10. (339)  P. Laukkanen, M. P. J. Punkkinen, M. Kuzmin, K. Kokko, J. Lång, R.M. Wallace "Passivation of III-V surfaces with crystalline oxidation ," Applied Physics Reviews, 8, 011309 (2021); https://doi.org/10.1063/1.5126629

2020

1. (338)  J. Lee, A. Ravichandran, M. Vigneswar, J. Mohan, L. Cheng, A. Lucero, H. Zhu, Z. Che, M. Catalano, M.J. Kim, R.M. Wallace, A. Venugopal, W. Choi, L. Colombo, J. Kim"Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics," ACS Applied Materials & Interfaces, 12 (32), 36688–36694 (2020); https://doi.org/10.1021/acsami.0c07548.

2. (337) Y.-C. Lin, B. M. Bersch, R. Addou, K. Xu, Q. Wang, C. M. Smyth, B. Jariwala, R. C. Walker II, S. K. Fullerton-Shirey, M. J. Kim, R. M. Wallace, J. A. Robinson. "Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation," Advanced Materials Interfaces, 2000422  (2020); https://dx.doi.org/10.1002/admi.202000422.

3. (336) C.M.Smyth, R.Addou, C.L.Hinkle, R.M.Wallace, "Origins of Fermi Level Pinning Between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment," Journal of Physical Chemistry C, 124 (27), 14550 (2020); http://dx.doi.org/10.1021/acs.jpcc.0c01646 .  

4. (335) C-S. Pang, T.Y.T. Hung, A.Khosravi, R.Addou, R.M. Wallace, and Z. Chen, ""Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices with > 108  On/Off Ratio,"  IEEE Electron Device Letters, 41(7), 1122 (2020); http://dx.doi.org/10.1109/LED.2020.2999258 

5. (334) H.W. Wu, P. Ponath, E.L. Lin, R.M. Wallace, C.D. Young, J.G. Ekerdt, A.A. Demkov, M.R. McCartney, and D.J. Smith, "Dielectric breakdown in epitaxial BaTiO3 thin films," Journal of Vacuum Science and Technology B, 38, 044007  (2020); https://doi.org/10.1116/6.0000237 . 

6. (333) C-S. Pang, T.Y.T. Huang, A. Khosravi, R. Addou, Q. Wang, M. J.  Kim, R. M. Wallace, Z. Chen, "Atomically Controlled Tunable Doping in High Performance WSe2 Devices," Advanced Electronic Materials, 1901304 (2020); https://doi.org/10.1002/aelm.201901304

7. (332) X. Wang, C. R. Cormier, A. Khosravi, C. M. Smyth, J. R. Shallenberger, R. Addou and R. M. Wallace, "In situ exfoliated 2D Molybdenum Disulfide Analyzed by XPS," Surface Science Spectra, 27,(1) (2020); https://doi.org/10.1116/6.0000153

8. (331)  J. Hwang, C. Zhang, Y-S. Kim, R. M. Wallace, K. Cho, "Giant renormalization of dopant impurity levels in 2D semiconductor MoS2," Nature Scientific Reports, 10, 4938 (2020); https://www.nature.com/articles/s41598-020-61675-y

9. (330)  A. Kozhakhmetov, J. R Nasr, F. Zhang, K. Xu, N. C. Briggs, R. Addou, R. Wallace, S. K Fullerton-Shirey, M. Terrones, S. Das and J. A Robinson, "Scalable BEOL compatible 2D tungsten diselenide," 2D Materials 7 , 015029 (2020); https://doi.org/10.1088/2053-1583/ab5ad1.

10. (329) H. Zhu, R. Addou, Q. Wang, Y. Nie, K. Cho, M. J. Kim, R.M.Wallace, "Surface and Interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2," Nanotechnology, 31 055704 (2020);http://dx.doi.org/0.1088/1361-6528/ab4e44 

2019

1. (328) X. Wang, C.M. Smyth, A. Khosravi, C.R. Cormier, J.A.Shallenberger, R. Addou, R.M.Wallace, "2D Topological insulator Bismith Selenide Analyzed by in situ XPS," Surface Science Spectra, 26 024014 (2019)  (Editor's pick); https://doi.org/10.1116/1.5130891

2. (327)  J.R. Shallenberger, C.M. Smyth, R Addou, R. M. Wallace, “2-D Bismuth Telluride Analyzed by XPS,” Surface Science Spectra 26 024011 (2019);  https://doi.org/10.1116/1.5120015

3. (326) C.M.Smyth, R. Addou, C.L.Hinkle, R.M.Wallace, “Origins of Fermi level pinning between molybdenum dichaldogenides (MoSe2, MoTe2) and bulk metal contacts: Interfacial chemistry and Band Alignment,”  ACS Journal of Physical Chemistry C, 123 (39) 23919-23930  (2019); https://doi.org/10.1021/acs.jpcc.9b04355.

4. (325) A. T. Barton, LA. .Walsh, C.M. Smyth,X. Qin, R. Addou, C. Cormier, P.K. Hurley,  R.M. Wallace, C.L. Hinkle, "Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3," ACS Appl. Mater. Interfaces 11 (35) 32144-32150 (2019);  https://doi.org/10.1021/acsami.9b10625 

5. (324) A. T. Barton, R. Yue, L.Walsh, G. Zhou, C. Cormier, C.M. Smyth, R. Addou, L. Colombo, R.M. Wallace, C.L. Hinkle, "WSe2-xTex alloys grown by molecular beam epitaxy,"  2D Materials, 6, 045027 (2019); https://doi.org/10.1088/2053-1583/ab334d

6. (323) M. J. Mleczko, A. C. Yu, C. M. Smyth, V. Chen, Y. C. Shin, S. Chatterjee,  Y-C. Tsai, Y. Nishi, R. M. Wallace, E. Pop, "Contact Engineering High Performance n-Type MoTe2 Transistors," Nano Letters, 19 (9), 6352-6362  (2019); https://doi.org/10.1021/acs.nanolett.9b02497 . 

7. (322) C.M. Smyth, L.A. Walsh, P. Bolchakov, M. Catalano, M. Schmidt, B. Sheehan, R. Addou, L. Wang, J. Kim, M.J. Kim, C.D. Young, C.L. Hinkle, R.M. Wallace, "Engineering the Interface Chemistry for Scandium Electron Contacts in WSe2 Transistors and Diodes," 2D Materials, 6, 045020  (2019); https://doi.org/10.1088/2053-1583/ab2c44 .

8. (321) P. Zhao, A. Padovani, P. Bolshakov, A. Khosravi, L. Larcher, P. Hurley, C.L. Hinkle, R.M. Wallace, C.D. Young, "Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System," ACS Applied Electronic Materials, 1 (8), 1372-1377 (2019); https://doi.org/10.1021/acsaelm.8b00103.

9. (320) C.-L. Lo, M. Catalano, A. Khosravi, W. Ge, Y. Ji, D. Y. Zemlyanov, L. Wang, R. Addou, Y. Liu, R. M. Wallace, M. J. Kim, and Z. Chen, "Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature," Advanced Materials, 1902397  (2019); https://doi.org/10.1002/adma.201902397.

10. (319) P. Bolshakov, C. M. Smyth, A. Khosravi, P. Zhao, P. K. Hurley, C. L. Hinkle, R. M. Wallace, and C. D. Young, "Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure," ACS Applied Electronic Materials, 1(2), 210 (2019); https://doi.org/10.1021/acsaelm.8b00059 

11. (318) A. Khosravi, R. Addou, M. Catalano, J. Kim, R.M. Wallace, "High-κ Dielectric on ReS2: In-situ Thermal Vs Plasma-Enhanced Atomic Layer Deposition of Al2O3,"  Materials 12(7), 1056 (2019); https://doi.org/10.3390/ma12071056 and https://www.mdpi.com/1996-1944/12/7/1056

12. (317) H.S. Jin, D.H. Kim, S.K. Kim, R.M.Wallace, J. Kim, and T.J. Park, "Strategic selection of oxygen source for low temperature-atomic layer deposition of Al2O3 thin film," Advanced Electronic Materials,  5(3), 1800680 (2019); https://doi.org/10.1002/aelm.201800680

13. (316) J. Mäkelä, A. Lahti, M. Tuominen, M. Yasir, M. Kuzmin, P. Laukkanen, K. Kokko, M. Punkkinen, H. Dong, B. Brennan, and R.M. Wallace , "Unusual oxidation-induced core-level shifts at the HfO2/InP interface," Nature Scientific Reports, 9, 1462 (2019); https://doi.org/10.1038/s41598-018-37518-2.

14. (315) N. Briggs, S. Subramanian, Z.Lin, X. Li, X. Zhang, K. Zhang, K. Xiao, D.B. Geohegan, R.M. Wallace, L-Q. Chen, M. Terrones, A. Ebrahimi, S. Das, J. Redwing, C. L. Hinkle, K. Momeni, A. van Duin, V. Crespi, S. Kar, J. Robinson,  "A Roadmap for Electronic Grade 2-Dimensional Materials," 2D Materials, 6(2) 022001 (2019) (Invited Topical Review); https://doi.org/10.1088/2053-1583/aaf836.

15. (314) S. J. McDonnell and R.M. Wallace, "UV-Ozone Functionalization of 2D Materials," JOM - The Journal of The Minerals, Metals & Materials Society (TMS),  71(1) 224-237 (2019) (Invited Review); https://doi.org/10.1007/s11837-018-3156-x .

16. (313) C.M. Smyth, L. Walsh, P.  Bolshakov, M. Catalano, R. Addou, L. Wang, J. Kim, M. J. Kim, C. Young, C. L.  Hinkle, R. M. Wallace, "Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High Performance Hole Contacts," ACS Applied Nano Materials, 2(1) 75-88 (2019); http://dx.doi.org/10.1021/acsanm.8b01708 . 

17. (312) R. Addou and R.M.Wallace, "Using Photoelectron Spectroscopy in the Integration of 2D Materials for Advanced Devices," Journal of Electron Spectroscopy and Related Phenomenon,  231, 94-103 (2019) (Invited Review) ; https://doi.org/10.1016/j.elspec.2018.01.006

2018  

1. (311)  H. Kim, X. Meng, S. J. Kim, A. Lucero, L. Cheng, Y-C. Byun, J. Lee, S.M. Hwang, A, Kondusamy, R. M. Wallace, G. Goodman, A. Wan, M. Telgenhoff, B.K. Hwang, J. Kim, "Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper," ACS Applied Materials and Interfaces, 10 (51), 44825–44833 (2018); https://doi.org/10.1021/acsami.8b15291

2. (310) Z. Lin, Y. Lei, S. Subramanian, N. Briggs, Y. Wang, C.-L. Lo, E. Yalon, D. Lloyd, S. Wu, K. Koski, R. Clark, S. Das, R. M. Wallace, T. Kuech, J. S. Bunch, X. Li, Z. Chen, E. Pop, V. H. Crespi, J. A. Robinson, and M. Terrones, "Recent Progress on 2D Materials Beyond Graphene: From Ripples, Defects , Intercalation, and Valley Dynamics, to Straintronics, and Power Dissipation," APL Materials, 6, 080701 (2018) (Featured Article); https://doi.org/10.1063/1.5042598.

3. (309) Y. Nie, A. T. Barton, R. Addou, Y. Zheng, L. A. Walsh, S. M. Eichfeld, R. Yue, C. Cormier, C. Zhang, Q. Wang, C. Liang,  J. A. Robinson, M. Kim, W. Vandenberghe, L. Colombo, P.-R. Cha, R. M. Wallace, C. L. Hinkle and K. Cho, "Dislocation driven spiral and non-spiral growth in layered chalcogenides: morphology, mechanism, and mitigation," Nanoscale, 10, 15023 (2018); http://dx.doi.org/10.1039/C8NR02280A.

4. (308) G. Zhou, R. Addou, Q. Wang, S. Honari, C. R. Cormier, L. Cheng, R. Yue, C. M. Smyth, A. Laturia, J. Kim, W. G. Vandenberghe, M. J. Kim, R. M. Wallace, and C. L. Hinkle, "High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth,"  Advanced Materials 30(36), 1803109 (2018); https://doi.org/10.1002/adma.201803109.

5. (307) P. Bolshakov, A. Khosravi, P. Zhao, P.K. Hurley, C.L. Hinkle, R.M. Wallace, and C.D. Young, “Dual-gate MoS2 transistors with sub-10nm top-gate high-k gate dielectrics,” Applied Physics Letters, 112, 253502 (2018); https://doi.org/10.1063/1.5027102.

6. (306) L.A. Walsh, A.J. Green, R. Addou, W. Nolting, C.R. Cormier, A.T. Barton, T.R. Mowll, R. Yue, N. Lu, J. Kim, M.J. Kim, V.P. LaBella, C.A. Ventrice, Jr., S. McDonnell, W.G. Vandenberghe, R.M. Wallace, A. Diebold, and C.L. Hinkle, "Fermi Level Manipulation Through Native Doping in the Topological Insulator Bi2Se3," ACS Nano, 12(6), 6310 (2018); https://doi.org/10.1021/acsnano.8b03414.

7. (305) X. Wang, X. Qin, W. Wang, Y. Liu, X. Shi, Y. Sun, C. Liu, J. Zhao, G. Zhang, H. Liu, K. Cho, R. Wu, J. Wang, S. Zhang. R.M. Wallace, H. Dong, “Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing,” Applied Surface Science, 443, 567 (2018); https://doi.org/10.1016/j.apsusc.2018.03.009

8. (304) P. Zhao, A. Khosravi, A. Azcatl, P. Bolshakov, G. Mirabelli, E. Caruso, C.L. Hinkle, P.K. Hurley, R.M.Wallace, C.D.Young, "Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance - voltage analysis," 2D Materials, 5, 031002 (2018); https://doi.org/10.1088/2053-1583/aab728

9. (303) R. Addou, C. Smyth, J-Y. Noh, Y-C. Lin, Y. Pan, S. Eichfeld, S. Fölsch, J.A. Robinson, K. Cho, R. Feenstra, R. M. Wallace, "One dimensional metallic edges in atomically thin WSe2 induced by air exposure," 2D Materials, 5 025017 (2018); http://dx.doi.org/10.1088/2053-1583/aab0cd

10. (302) K. Zhang, B. Bersch, J. Joshi, R. Addou, C. R. Cormier, C. Zhang, K. Xu, N. Briggs, K. Wang, S. Subramanian, K. Cho, S. Fullerton, R. M. Wallace, P. Vora, J.A. Robinson, "Tuning the electronic and photonic properties of monolayer MoS2 via in-situ Re substitutional doping," Advanced Functional Materials, 28, 1706950 (2018); http://dx.doi.org/10.1002/adfm.201706950

11. (301) Y-C. Lin,B. Jariwala, B. Bersch, K. Xu, Y. Nie, B. Wang, S. Eichfeld, X. Zhang, T. Choudhury, Y. Pan, R. Addou, C.M. Smyth, J. Li, K. Zhang, M. Haque, S. Fölsch, R. Feenstra, R.M. Wallace, K. Cho, S. Fullerton-Shirey, J. Redwing, J. Robinson, "Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors," ACS Nano, 12(2), 965 (2018);http://dx.doi.org/10.1021/acsnano.7b07059

12. (300) S. Vishwanath, A. Sundar, X. Liu, A. Azcatl, E.Lochocki, A. R. Woll, S. Rouvimov, W. S. Hwang,  N. Lu, X. Peng, H.-H. Lien, J. Weisenberger, S. McDonnell, M.J. Kim, M. Dobrowolska, J. K. Furdyna, K. Shen, R. M. Wallace, D. Jena, and H. G. Xing, "MBE growth of few-layer 2H-MoTe2 on 3D substrates," Journal of Crystal Growth782, 61 (2018); https://doi.org/10.1016/j.jcrysgro.2017.10.024

13. (299) A. Khosravi, R. Addou, C. M. Smyth, R. Yue, C. R. Cormier, J. Kim, C. L. Hinkle, and R. M. Wallace, "Covalent Nitrogen Doping in MBE and Bulk WSe2," APL Materials 6,026603 (2018); http://dx.doi.org/10.1063/1.5002132

2017

1. (298) H. Zhu, Q. Wang, L. Cheng, R. Addou, J. Kim, M. J. Kim, R. M. Wallace, "Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing," ACS Nano, 11(11), 11005 (2017); http://dx.doi.org/10.1021/acsnano.7b04984.

2. (297) L.A. Walsh, C.M. Smyth, A.T. Barton, Q.Wang, Z.Che, R.Yue, J.Kim, M.J. Kim, R.M. Wallace, and C.L. Hinkle, "Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3," Journal of Physical Chemistry C, 121(42), 23551 (2017); http://dx.doi.org/10.1021/acs.jpcc.7b08480

3. (296) H. Dong, C. Gong, R. Addou, S. McDonnell, A. Azcatl, X. Qin, W. Wang, W-H. Wang, C. L. Hinkle, R.M. Wallace, "Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy," ACS Applied Materials and Interfaces, 9 (44),38977 (2017); http://dx.doi.org/10.1021/acsami.7b10974

4. (295) R. Yue, Y. Nie, L. Walsh, R. Addou, C.  Liang, N. Lu, A. Barton, H. Zhu, Z. Che, D. Barrera, L. Cheng, P-R. Cha, Y. Chabal, J. Hsu, J. Kim, M. Kim, L. Colombo, R. M. Wallace, K. Cho, and C. L. Hinkle, "Nucleation and growth of WSe2: Enabling large grain transition metal dichalcogenides,"  2D Materials, 4, 045019 (2017);. http://dx.doi.org/10.1088/2053-1583/aa8ab5

5. (294) L. Cheng, J. Lee, H. Zhu, A.V. Ravichandran, Q. Wang, A. Lucero, M. Kim, R.M. Wallace, L. Colombo, and J. Kim, “Sub-10 Nanometer Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices,” ACS Nano 11(10), 10243 (2017); http://dx.doi.org/10.1021/acsnano.7b04813

6. (293) A. Azcatl, Q. Wang, M.J. Kim and R.M. Wallace, "Al2O3 on WSe2 by Ozone based Atomic Layer Deposition: Nucleation and Interface Study,"  APL Materials, 5, 086108 (2017); http://doi.org/10.1063/1.4992120

7. (292) P. Bolshakov, P. Zhao , A. Azcatl , P. K. Hurley , R. M. Wallace , C. D. Young, "Improvement in Top-Gate MoS2 Transistor Performance due to High Quality Backside Al2O3 Layer," Applied Physics Letters 111, 032110 (2017); http://dx.doi.org/10.1063/1.4995242

8. (291) P. Zhao, A. Azcatl, Y. Y. Gomeniuk,P. Bolshakov, M. Schmidt, S. J. McDonnell, C. L. Hinkle, P. K. Hurley, R. M. Wallace, and C. D. Young, "Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy," ACS Applied Materials and Interfaces, 9 (28), 24348 (2017); http://dx.doi.org/10.1021/acsami.7b06204

9. (290) Santosh KC,R.C. Longo, R.M. Wallace,and K.Cho, "Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics,"ACS Omega, 2, 2827 (2017); http://dx.doi.org/10.1021/acsomega.7b00636

10. (289) Y. Nie, C. Liang, P.-R. Cha, L. Colombo, R. M. Wallace, K. Cho, “A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides,” Scientific Reports, 7, 2977 (2017); http://dx.doi.org/10.1038/s41598-017-02919-2

11. (288) A. Ismach, H. Chou, P. Mende, A. Dolocan, R. Addou, S. Aloni, R.M.Wallace, R. Feenstra, R. Ruoff, L.  Colombo, “Carbon-Assisted Chemical Vapor Deposition of Hexagonal Boron Nitride,” 2D Materials, 4 025117 (2017); https://doi.org/10.1088/2053-1583/aa74a5

12. (287) P. Bolshakov, P. Zhao, A. Azcatla, P. K. Hurley, R. M. Wallace, C.D. Young, “Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics,” Microelectronic Engineering, 178, 190 (2017); http://doi.org/10.1016/j.mee.2017.04.045

13. (286) C. Smyth, R. Addou, S. McDonnell, C. Hinkle, R.M.  Wallace, "WSe2 ­Contact Metal Interface Chemistry and Band Alignment under High Vacuum and Ultra High Vacuum Deposition Conditions,"2D Materials, 4 025284 (2017); http://dx.doi.org/10.1088/2053-1583/aa6bea

14. (285) X. Qin, W.-E. Wang, R. Droopad, M.S.Rodder, R.M.Wallace, "A crystalline oxide passivation on In0.53Ga0.47As(100)," Journal of Applied Physics, 121 125302 (2017); http://dx.doi.org/10.1063/1.4979202

15. (284) R.C. Longo, R. Addou, Santosh KC, J.-Y. Noh, C.M. Smyth, D. Barrera, C. Chang, J. W.P. Hsu, R.M.Wallace, K. Cho, "Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation," 2D Materials, 4 025050 (2017); https://doi.org/10.1088/2053-1583/aa636c

16. (283) L. Walsh, R. Yue, Q. Wang, A. Barton, R. Addou, C. M. Smyth, H. Zhu, J. Kim, L. Colombo, M. J. Kim, R.M. Wallace, C. L. Hinkle, "WTe2 thin films grown by beam-interrupted molecular beam epitaxy," 2D Materials, 4 025044 (2017); https://doi.org/10.1088/2053-1583/aa61e1

17. (282) C. Gong, C. Zhang, Y. J. Oh, W. Wang, G. Lee, B. Shan, R. M Wallace and K. Cho, "Electronic transport across metal-graphene edge contact," 2D Materials  4 025033 (2017); https://doi.org/10.1088/2053-1583/aa5c9d

18. (281) T.J.Park, Y.-C. Byun, R. M. Wallace, and J. Kim, "Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films," Journal of Chemical Physics 146, 052821 (2017); http://dx.doi.org/10.1063/1.4975083

19. (280) P. Zhao, A. Azcatl, P. Bolshakov, J. Moon, and C. L. Hinkle, P. K. Hurley, R. M. Wallace, and C. D. Young, "Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric," Journal of Vacuum Science and Technology B, 35, 01A118 (2017); http://dx.doi.org/10.1116/1.4974220

20. (279) H. Zhu, Q. Wang, C. Zhang, R. Addou, K. Cho, R. M. Wallace and M. J. Kim, "New Mo6Te6 Subnanometer-diameter Nanowire Phase from 2H-MoTe2," Advanced Materials, 29(18), 1606264 (2017);  http://dx.doi.org/10.1002/adma.201606264  See also: https://wiley.altmetric.com/details/17829115/news

21. (278) C.Zhang, C.Gong, Y.Nie, K.A. Min, C.Liang, Y.J.Oh, H.Zhang, W.Wang, S.Hong, L.Colombo, R.M.Wallace, K.Cho, "Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van der Waals Heterostructures," 2D Materials, 4, 015026 (2017); http://dx.doi.org/10.1088/2053-1583/4/1/01502

22. (277) K-A. Min, J. Park, R. M. Wallace, K. Cho, S. Hong, " Reduction of Fermi level pinning at Au-MoS2 interfaces by atomic passivation on Au surface," 2D Materials 4, 015019 (2017); http://dx.doi.org/10.1088/2053-1583/4/1/015026

2016

1. (276) A. T. Lucero, Y-C. Byun, X. Qin, L. Cheng, H. Kim, R. M. Wallace, and J. Kim, "Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization," Japanese Journal of Applied Physics, 55, 08PC02 (2016). http://doi.org/10.7567/JJAP.55.08PC02

2. (275) L. Bjaalie, A. Azcatl, S. McDonnell, C. R. Freeeze, S. Stemmer, R. M. Wallace, and C. G. Van de Walle, "Band alignments between SmTiO3, GdTiO3, and SrTiO3," Journal of Vacuum Science and Technology A, 34, 061102 (2016). http://dx.doi.org/10.1116/1.4963833.

3. (274) S. J. McDonnell and R.M.Wallace, "Atomically-Thin Layered Films for Device Applications based upon 2D TMDC Materials", Thin Solid Films (Invited Review), 616, 482 (2016); http://dx.doi.org/10.1016/j.tsf.2016.08.068.

4. (273) R. Addou and R.M.Wallace, "Surface Analysis of WSe2  Crystals: Spatial and Electronic Variability," ACS Applied Materials and Interfaces, 8 (39), 26400 (2016); http://dx.doi.org/10.1021/acsami.6b08847

5. (272) Santosh KC , R. Longo , R. Addou , R. M.  Wallace, K. Cho, “Electronic properties of MoS2 / MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts,” Nature Scientific Reports, 6, 33562 (2016); http://dx.doi.org/10.1038/srep33562.

6. (271) Z. Y. Al Balushi,  K. Wang ,  R. K Ghosh , R. A. Vilá , S. M. Eichfeld , J. D. Caldwell , X. Qin , Y.-C. Lin , P. A. DeSario , G. Stone , S. Subramanian , D. F. Paul , R. M. Wallace , S. Datta , J. M. Redwing, J. A. Robinson, “Two-dimensional gallium nitride realized via graphene encapsulation,”  Nature Materials, 15, 1166-1171 (2016); http://dx.doi.org/10.1038/nmat4742

7. (270) J. Bullock, D. Kiriya, N. Grant, A. Azcatl, M. Hettick, T. Kho, P. Phang, H. C. Sio, D. Yan, D. Macdonald, M. A. Quevedo-Lopez, R. M. Wallace, A. Cuevas, A. Javey, "Super acid passivation of crystalline silicon surfaces," ACS Applied Materials and Interfaces, 8 (36), 24205 (2016); http://dx.doi.org/10.1021/acsami.6b07822

8. (269) A. Azcatl, X. Qin, A. Prakash, C. Zhang, L. Cheng, Q. Wang, N. Lu, M. J. Kim, J. Kim, K. Cho, R. Addou, C. L. Hinkle, J. Appenzeller and R. M. Wallace, “Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure,” Nano Letters, 16 (9), 5437 (2016); http://dx.doi.org/10.1021/acs.nanolett.6b01853

9. (268) C. Zhang, Santosh KC, Y. Nie, C. Liang, W. G. Vandenberghe, R. C. Longo, Y. Zheng, F. Kong, S. Hong, R. M. Wallace, and Kyeongjae Cho, "Charge Mediated Reversible Metal−Insulator  Transition in Monolayer MoTe2 and WxMo1−xTe2 Alloy," ACS Nano, 10 (8), 7370 (2016);  http://dx.doi.org/10.1021/acsnano.6b00148.

10. (267) X. Qin, W.-E Wang, M. S. Rodder, R. M. Wallace, "In situ surface and interface study of crystalline (3×1)-O on InAs,"  Applied Physics Letters, 109, 041601 (2016); http://dx.doi.org/10.1063/1.4959940

11. (266) H. Zhu, X. Qin, L. Cheng, A. Azcatl, J. Kim, and R. M. Wallace, "Remote plasma oxidation and atomic layer etching of MoS2,"  ACS Applied Materials and Interfaces,8 (29), 19119 (2016); http://dx.doi.org/10.1021/acsami.6b04719

12. (265) C. Smyth, R. Addou, S. McDonnell, C. L. Hinkle, R. M. Wallace, "Contact Metal-MoS2 Interfacial Reactions and Potential Implications on MoS2-based Device Performance," Journal of Physical Chemistry C, 120 (27), 14719 (2016); http://dx.doi.org/10.1021/acs.jpcc.6b04473.

13. (264) Y. Nie, C. Liang, K. Zhang, R. Zhao, S. Eichfeld, P-R. Cha, L. Colombo, J. Robinson, R. M. Wallace, K. Cho,  “First Principles Kinetic Monte Carlo Study on the Growth Patterns of WSe2 Monolayer,” 2D Materials, 3, 025029 (2016); http://dx.doi.org/10.1088/2053-1583/3/2/025029.

14. (263) Y-C. Lin, J. Li, S. C. de La Barrera,S. M. Eichfeld, Y. Nie,R. Addou, P. C. Mende, R. M. Wallace, K. Cho, R. M. Feenstra, and J. A. Robinson, "Tuning Electronic Transport in Epitaxial Graphene-based van der Waals Heterostructures," Nanoscale, 8, 8947-8954 (2016); http://dx.doi.org/10.1039/C6NR01902A

15. (262) N. Lu, C. Zhang, C-H. Lee, J. P. Oviedo, M. Nguyen, X. Peng, R. Wallace, T. Mallouk, J. Robinson, J. Wang, K. Cho, M. Kim, "Atomic and Electronic Structures of WTe2 Probed by High Resolution Electron Microscopy and ab initio Calculation," Journal of Physical Chemistry C, 120 (15), pp 8364–8369 (2016);  http://dx.doi.org/10.1021/acs.jpcc.6b01044.

16. (261) M. Amani, R. Addou, G.H. Ahn, D. Kiriya, P. Taheri, D-H. Lien, J. Ager, R.M. Wallace, A. Javey, "Recombination kinetics and effects of superacid treatment in sulfur and selenium based transition metal dichalcogenides,"  Nano Letters, 16 (4), 2786–2791 (2016); http://dx.doi.org/10.1021/acs.nanolett.6b00536

17. (260) S. McDonnell, C. Smyth, C. L. Hinkle, R.M. Wallace, "MoS2-Titanium Contact Interface Reactions," ACS Applied Materials and Interfaces, 8 (12), 8289–8294 (2016); http://dx.doi.org/10.1021/acsami.6b00275

18. (259) Y. Hu, C Wang, H Dong, R M. Wallace, K Cho, W-H Wang, and W Wang, "Origin of Indium Diffusion in high-k oxide HfO2," ACS Applied Materials and Interfaces, 8 (11), 7595–7600 (2016); http://dx.doi.org/10.1021/acsami.6b01068

19. (258) T.J.Park, Y.Byun, R.M.Wallace, and J. Kim, "Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 ◦C) by Al2O3 incorporation," Applied Surface Science,  371, 360–364 (2016); http://dx.doi.org/10.1016/j.apsusc.2016.02.243

20. (257) Y. Nie, S. Hong, R. M. Wallace, and K. Cho, "Theoretical Demonstration of Ionic Barristor," Nano Letters, 16 (3), 2090–2095 (2016); http://dx.doi.org/10.1021/acs.nanolett.6b00193

21. (256) S. Vishwanath, X. Liu, S. Rouvimov, L. Basile, N. Lu, A. Azcatl, K. Magno, R. M. Wallace, M. Kim, J-­C. Idrobo, J. K. Furdyna, D. Jena and H. G. Xing, “Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy,” Journal of Materials Research, 31(7), 900-910 (2016);    http://dx.doi.org/10.1557/jmr.2015.374

22. (255) L. Cheng, S. Jandhyala, G. Mordi, A. T Lucero, J. Huang, A. Azcatl, R. Addou, R. M. Wallace, L. Colombo, and J. Kim, "Partially Fluorinated Graphene: Structural and Electrical Characterization," ACS Applied Materials and Interfaces, 8 (7), 5002–5008 (2016); http://dx.doi.org/10.1021/acsami.5b11701 

23. (254) R. C. Longo, J. H. G. Owen, S. McDonnell, D. Dick, J. B. Ballard, J. N. Randall, R. M. Wallace, Y. J. Chabal, and K. Cho, "Toward Atomic-Scale Patterned Atomic Layer Deposition: Reactions of Al2O3 Precursors on a Si(001) Surface with Mixed Functionalization," The Journal of Physical Chemistry C,120(5), 2628 (2016); http://dx.doi.org/10.1021/acs.jpcc.5b09053

2015

1. (253) M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, Santosh KC, M. Dubey, K. Cho, R.M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager III, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350 (6264), 1065-1068 (2015);http://dx.doi.org/10.1126/science.aad2114

2. (252) W. Wang, C. Gong,K. Xiong, Santosh K.C., R.M. Wallace , and K. Cho, "Materials Design on the Origin of Gap States in a High-κ/GaAs Interface," Engineering 1(3), 372-377 (2015); http://dx.doi.org/10.15302/J-ENG-2015052

3. (251) A. T. Lucero, Y.-C. Byun , X. Qin, L. Cheng, H. Kim, R. M. Wallace, J.Kim, "In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As," Electronics Materials Letters 11, 769 (2015); http://dx.doi.org/10.1007/s13391-015-5150-6

4. (250) J. B. Ballard, D. D. Dick, S. J. McDonnell, M. Bischof, J. Fu, J. H. G. Owen, W. R. Owen, J. D. Alexander, D. L. Jaeger, P. Namboodiri, E. Fuchs, Y. J. Chabal, R. M. Wallace, R. Reidy, R. M. Silver, J. N. Randall, J. Von Ehr, III, “Atomically Traceable Nanostructure Fabrication,” Journal of Visualized Experiments, (101), e52900, (2015); http://dx.doi.org//10.3791/52900.

5. (249) K. Zhang, S. Feng, J. Wang, A. Azcatl, N. Lu, Ning; R. Addou, N. Wang, C. Zhou, J. O. Lerach, V. Bojan, M. J. Kim, L.-Q. Chen,  R. M. Wallace, M. Terrones, J. Zhu, J. A. Robinson, “Manganese Doping of Monolayer MoS2: The Substrate is Critical," Nano Letters, 15, 86 (2015); http://dx.doi.org/10.1021/acs.nanolett.5b02315

6. (248) X. Qin and R.M.Wallace, “In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors,” Applied Physics Letters, 107, 081608 (2015); http://dx.doi.org/10.1063/1.4929818

7. (247) R. Addou, S. McDonnell, D. Barrera, Z. Guo, A. Azcatl, J. Wang, H. Zhu, C. Hinkle, M. Quevedo-Lopez, H. Alshareef, L. Colombo, J. Hsu, R. M. Wallace,  “Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces,” ACS Nano, 9, 9124 (2015); http:/dx/doi.org/10.1021/acsnano.5b03309

8. (246) Santosh KC,, C. Zhang, S.; Hong, R. Wallace, K.  Cho, "Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave," 2D Materials, 2 035019 (2015); http://dx.doi.org/10.1088/2053-1583/2/3/035019

9. (245) J. Mäkelä, M. Tuominen, M. Yasir, M. Kuzmin, J.Dahl, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, and R. M. Wallace, “Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy,”Applied Physics Letters, 107, 061601 (2015); http://dx.doi.org/10.1063/1.4928544

10. (244) Y.-C. Lin, R. Ghosh, R. Addou, N. Lu, S. Eichfeld, H. Zhu, M.-Y. Li, X. Peng, M. Kim, L.-J. Li, R. Wallace, S. Datta, and J. Robinson“Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures,” Nature Communications, 6, 7311 (2015); http://dx.doi.org/10.1038/ncomms8311

11. (243) H. Zhu, S. McDonnell, X.Qin, A. Azcatl, L. Cheng, R. Addou, J. Kim, P. D. Ye and R. M. Wallace,"Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in situ Interface Study," ACS Applied Materials and Interfaces, 7, 13038  (2015). http://dx.doi.org/10.1021/acsami.5b03192    Selected for inclusion in the ACS virtual journal on Advances in Atomic Layer Deposition (2016).

12. (242) R. Addou, L. Colombo, and R. M. Wallace, “Surface Defects on Natural MoS2,” ACS Applied Materials and Interfaces, 7 (22), 11921 (2015); http://dx.doi.org/10.1021/acsami.5b01778 

13. (241) L. Cheng, K. Yun, A. Lucero, J. Huang, X. Meng, G. Lian, H.-S. Nam, R. M Wallace, M. Kim, A. Venugopal, L. Colombo and J. Kim, “Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD,” Journal of Materials Chemistry C, 3, 5192 (2015); http://dx.doi.org/10.1039/c5tc00635j

14. (240) A.T. Barton, R. Yue, S. Anwar, H. Zhu, X. Peng, S. McDonnell, N. Lu, R. Addou, L. Colombo, M.J. Kim, R.M. Wallace, C.L. Hinkle, "Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy.” Microelectronics Engineering, 147, 306 (2015); http://dx.doi.org/10.1016/j.mee.2015.04.105

15. (239) P. Zhao, P.B. Vyas, S. McDonnell, P. Bolshakov-Barrett, A. Azcatl, C.L. Hinkle, P.K. Hurley, R.M. Wallace, and C.D. Young,  “Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics,” Microelectronics Engineering, 147, 151 (2015); http://dx.doi.org/10.1016/j.mee.2015.04.078

16. (238) H. Zhu, X. Qin, A. Azcatl, R. Addou, S. McDonnell, P. Ye and R. M. Wallace, “Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus,”Microelectronics Engineering, 147, 1 (2015); http://dx.doi.org/10.1016/j.mee.2015.04.014

17. (237) S. Vishwanath, X. Liu, S. Ruvimov, P. Mende, A. Azcatl, S. McDonnell, R Wallace, R. Feenstra, Randall, J. Furdyna, D. Jena, and H. Xing, "Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene," 2D Materials, 2, 024007 (2015); http://dx.doi.org/10.1088/2053-1583/2/2/024007

18. (236) Santosh KC, R. C. Longo, R.M.Wallace, and K. Cho, “Surface Oxidation Energetics and Kinetics on MoS2 Monolayer,” Journal of Applied Physics, 117, 135301 (2015); http://dx.doi.org/10.1063/1.4916536

19. (235) S M. Eichfeld, L Hossain, Y-C Lin, A. F. Piasecki, B. Kupp, A. G. Birdwell, R. A. Burke, N. Lu, X. Peng, J. Li, A. Azcatl, S. McDonnell, R. M. Wallace, M. J. Kim, T. S. Mayer, J. M. Redwing, and J. A. Robinson, “Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition,” ACS Nano, 9, 2080 (2015); http://dx.doi.org/10.1021/nn5073286

20. (234) X. Qin, L. Cheng, S. McDonnell, A. Azcatl, H. Zhu, J. Kim, R. M. Wallace, “A comparative study of atomic layer deposition Al2O3 and HfO2 on AlGaN/GaN,” Journal of Materials Science: Materials in Electronics, 26, 4368 (2015); http://dx.doi.org/10.1007/s10854-015-2926-2.

21. (233) J. Mäkelä, M. Tuominen, M. Kuzmin, M. Yasir, J. Lång, M.P.J. Punkkinen, P. Laukkanen, K. Kokko, K. Schulte, J. Osiecki, R.M. Wallace, “Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors,” Applied Surface Science 329, 371 (2015); http://dx.doi.org/10.1016/j.apsusc.2014.12.155

22. (232) A. Azcatl, Santosh KC, X Peng, N. Lu, S. McDonnell, X. Qin, F. De Dios, R. Addou, J. Kim, M.J. Kim, K. Cho, R.M. Wallace, “HfO2 on UV-O3 exposed Transition Metal Dichalcogenides: Interfacial Reactions Study,” 2D Materials, 2, 014004 (2015); http://dx.doi.org/10.1088/2053-1583/2/1/014004

23. (231) Z. Zhang, R. Cao, C. Wang, H.-B. Li, H. Dong, W.-H. Wang, F. Lu, Y. Cheng, X. Xie, H. Liu, K. Cho, R. Wallace, and W. Wang, “GaN as an interfacial passivation layer: Tuning band offset and removing Fermi level pinning for III-V MOS devices,” ACS Appl. Mater. Interfaces, 7 (9), 5141 (2015); http://dx.doi.org/10.1021/am507287f

24. (230) R. Yue , A. T. Barton, H. Zhu , A. Azcatl , L. F. Pena , J. Wang , X. Peng , N. Lu , L. Cheng , R. Addou , S. McDonnell , L. Colombo , J. W. P. Hsu , J. Kim , M. J. Kim , R. M. Wallace , and C. L. Hinkle, “HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy,” ACS Nano, 9, 474 (2015); http://dx.doi.org/10.1021/nn5056496

25. (229) A. Dahal, R. Addou, A. Azcatl, H. Coy-Diaz, N. Lu, X. Peng, F. De Dios, J. Kim, M.J. Kim, R.M. Wallace, and M. Batzill, “Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria,” ACS Applied Materials & Interfaces 7, 2082 (2015); http://dx.doi.org/10.1021/am508154n

26. (228) J. Robertson and R.M.Wallace, “High-K materials and metal gates for CMOS applications,” Materials Science and Engineering R, 88, 1-41 (2015); http://dx.doi.org/10.1016/j.mser.2014.11.001

27. (227) J. P. Oviedo , Santosh KC , N. Lu , J. Wang , K. Cho , R. M. Wallace , and M. J. Kim,  "In situ TEM Characterization of Shear Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide," ACS Nano, 9, 1543 (2015); http://dx.doi.org/10.1021/nn506052d

2014

1. (226) M. Barth, G.B. Rayner, Jr., S. McDonnell, R.M. Wallace, B.R. Bennett, R. Engel-Herbert, and S. Datta, "High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness," Applied Physics Letters, 105, 222103 (2014); http://dx.doi.org/10.1063/1.4903068

2. (225) Y-C. Lin, C-Y.S. Chung, R.K. Ghosh, J. Li, H. Zhu, R. Addou, B. Diaconescu, T. Ohta, X. Peng, N. Lu, M.J. Kim, J.T. Robinson, R.M.Wallace, T.S. Mayer, S. Datta, L.-J. Li, J. A. Robonson, Atomically Thin Heterostructures based on Single-Layer Tungsten Diselenide and Graphene," NanoLetters, 14, 6936 (2014); http://dx.doi.org/10.1021/nl503144a

3. (224) X. Qin, H. Dong, J. Kim and R. M. Wallace, “A Crystalline Oxide Passivation for Al2O3/AlGaN/GaN,” Applied Physics Letters, 105, 141604 (2014); http://dx.doi.org/10.1063/1.4897641

4. (223) P. Zhao, D. Kiriya, A. Azcatl, C. Zhang, M. Tosun, Y-S. Liu, M. Hettick, J.S. Kang, S. McDonnell, Santosh KC, J. Guo, K. Cho, R.M. Wallace, A Javey, “Air Stable p-Doping of WSe2 by Covalent Functionalization,” ACS Nano, 8, 10808 (2014);  http://dx.doi.org/10.1021/nn5047844

5. (222) Santosh KC, R. Longo, R. Addou, R. M. Wallace, and K. Cho “Impact of Intrinsic Atomic Defects on the Electronic Structure of MoS2 Monolayers” Nanotechnology, 25, 375703 (2014); http://dx.doi.org/10.1088/0957-4484/25/37/375703

6. (221) L. Cheng, X. Qin, A. T. Lucero, A. Azcatl, J. Huang, R. M. Wallace, K. Cho, and J. Kim “Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone, “ ACS Applied Materials and Interfaces, 6 (15), 11834 (2014); http://dx.doi.org/10.1021/am5032105

7. (220) J. B. Ballard, J. H. G. Owen, W. Owen, J. R. Alexander, E. Fuchs, J. N. Randall, J. R. Von Ehr, S. McDonnell, D. D. Dick, R. M. Wallace, Y. J. Chabal, M. R. Bischof, D. L. Jaeger, R. F. Reidy, J. Fu, P. Namboodiri, K. Li, and R. M. Silver, “Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control,” Journal of Vacuum Science and Technology B, 32, 041804 (2014); http://dx.doi.org/10.1116/1.4890484

8. (219) X. Qin, A. Lucero, A. Azcatl, J. Kim, and R. M. Wallace, “In situ X-ray Photoelectron Spectroscopy and Capacitance Voltage Characterization of Plasma Treatments for Al2O3/AlGaN/GaN Stacks,” Applied Physics Letters, 105, 011602 (2014); http://dx.doi.org/10.1063/1.4887056 

9. (218) R.V. Galatage, D. M. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states,” Journal of Applied Physics,116, 014504 (2014); http://dx.doi.org/10.1063/1.4886715

10. (217) S. McDonnell, B. Brennan, E. Bursa, R.M.Wallace, K. Winkler, P. Baumann, "GaSb oxide Thermal Stability studied by Dynamic XPS," Journal of Vacuum Science and Technology B, 32, 041201 (2014); http://dx.doi.org/10.1116/1.4878940

11. (216) S. McDonnell, A. Azcatl, R. Addou, C. Gong, C. Battaglia, S. Chuang, K. Cho, A. Javey, R.M. Wallace, “Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignment,” ACS Nano, 8, 6265  (2014); http://dx.doi.org/10.1021/nn501728w

12. (215) R. C. Longo, J. H. G. Owen, S. McDonnell, J. B. Ballard, R. M. Wallace, J. N. Randall, Y. J. Chabal, and K. Cho, “Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces,” Journal of Physical Chemistry C, 118, 10088 (2014); http://dx.doi.org/10.1021/jp411903z

13. (214) H. Dong, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, C. L. Hinkle, J. Kim, Y. J. Chabal, R. M. Wallace, “Si interfacial passivation layer chemistry for high-k/InP interfaces,”  ACS Applied Materials & Interfaces, 6, 7340 (2014); http://dx.doi.org/10.1021/am500752u

14. (213) C. Gong, L. Colombo, R. M. Wallace, and K. Cho, “The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces,” NanoLetters, 14, 1714 (2014); http://dx.doi.org/10.1021/nl403465v

15. (212) A. Azcatl, S. McDonnell, Santosh KC, X. Peng, H. Dong, X. Qin, R. Addou, G. I. Mordi, N. Lu, J. Kim, M. J. Kim, K. Cho, and R. M. Wallace “MoS2 Functionalization for Ultra-thin Atomic Layer Deposited Dielectrics,” Applied Physics Letters, 104, 111601 (2014); http://dx.doi.org/10.1063/1.4869149

16. (211) S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J.S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R. M. Wallace, and A. Javey, "MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts," Nano Letters, 14, 1337 (2014); http://dx.doi.org/ 10.1021/nl4043505

17. (210) S. McDonnell, R. Addou, C. Buie, R. M. Wallace, and C. L. Hinkle, "Defect-Dominated Doping and Contact Resistance in MoS2," ACS Nano, 8, 2880 (2014); http://dx.doi.org/10.1021/nn500044q

18. (209) R. C. Longo, S. McDonnell, D. Dick, R. M. Wallace, Y. J. Chabal, J. H. G. Owen, J. B. Ballard, J. N. Randall, K. Cho, "Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface," Journal of Vacuum Science & Technology B, 32, 03D112 (2014); http://dx.doi.org/10.1116/1.4864619

19. (208) T. J. Park, P. Sivasubramani, R. M. Wallace, and J. Kim, "Effects of growth temperature and oxidant feeding time on residual C- and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films," Applied Surface Science, 292, 880 (2014); http://dx.dor.org/10.1016/j.apsusc.2013.12.072

20. (207) S. McDonnell, A. Azcatl, G. Mordi, C. Floresca, A. Pirkle , L. Colombo, J. Kim, M. Kim and R. M. Wallace “Scaling of HfO2 dielectric on CVD graphene,” Applied Surface Science, 294, 96 (2014); http://dx.doi.org/10.1016/j.apsusc.2013.12.115

21. (206) C. Battaglia, X. Yin, M. Zheng, I. D. Sharp, T. L. Chen, A. Azcatl, S. McDonnell, C. Carraro, R. Maboudian, R. M. Wallace, and A. Javey, "Hole selective MoOx contact for silicon solar cells," Nano Letters, 14, 967 (2014); http://dx.doi.org/10.1021/nl404389u

22. (205) S. Park, S. Lee, G. Mordi, S. Jandhyala, M.-W. Ha, J.-S. Lee, L. Colombo, R. M. Wallace, B. H. Lee, and J. Kim, "Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors," IEEE Electron Device Letters, 35, 277 (2014); http://dx.doi.org/10.1109/LED.2013.2294828

23. (204) C. Gong, S. McDonnell, X. Qin, A. Azcatl, H. Dong, Y. J. Chabal, K. Cho, R.M. Wallace "Realistic Metal-Graphene Contact Structures," ACS Nano, 8, 642  (2014); http://dx.doi.org/10.1021/nn405249n

24. (203) Santosh KC, H. Dong, R. C. Longo, W. Wang, K. Xiong, R. M. Wallace and K. Cho “Electronic properties of InP (001)/HfO2 (001) interface: band offsets and oxygen dependence,” Journal of Applied Physics, 115, 023703 (2014); http://dx.doi.org/10.1063/1.4861177

25. (202) W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, S. Monaghan, É O’Connor, P.K. Hurley, R. M. Wallace, and Y. J. Chabal “Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing,” Applied Physics Letters, 104, 011601 (2014); http://dx.doi.org/10.1063/1.4860960

26. (201) D. D. Dick, J.-F. Veyan, R. C. Longo Pazos, S. McDonnell, J. B. Ballard; X. Qin, H. Dong, J. H. G. Owen, J. N. Randall, R.M. Wallace, K. Cho, Y.J. Chabal “Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth,” Journal of Physical Chemistry C, 118, 482 (2014); http://dx.doi.org/10.1021/jp410145u

27. (200) S. Lee, O. D. Iyore, S. Park, Y. G. Lee, S. Jandhyala, C. G. Kang, G. Mordi, Y. Kim, M. Quevedo-Lopez, B. E. Gnade, R. M. Wallace, B. H. Lee, and J. Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate," Carbon, 68, 791 (2014); http://dx.doi.org/10.1016/j.carbon.2013.11.071

2013

1. (199) C. Gong, C. Huang, J. Miller, L. Cheng, Y. Hao, D. Cobden, J. Kim, R. S. Ruoff, R. M. Wallace, K. Cho, X. Xu, and Y.J. Chabal, “Metal Contacts on Physical Vapor Deposited Monolayer MoS2,” ACS Nano, 7, 11350 (2013); http://dx.doi.org/10.1021/nn4052138.

2. (198) X. Qin, H. Dong, B. Brennan, A. Azacatl, J. Kim, and R. M. Wallace “Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on Al0.25Ga0.75N,” Applied Physics Letters, 103, 221604 (2013); http://dx.doi.org/10.1063/1.4833836

3. (197) H. Dong, Santosh KC, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, and R. M. Wallace, "In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)," Journal of Applied Physics, 114, 203505 (2013); http://dx.doi.org/10.1063/1.4833569

4. (196) C. Gong, H. C. Floresca, D. Hinojos, S. McDonnell, X. Qin, Y. Hao, S. Jandhyala, G. Mordi, J. Kim, L. Colombo, R. S. Ruoff, M.J. Kim, K. Cho, R. M. Wallace, and Y. J. Chabal “Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide,” Journal of Physical Chemistry C, 117, 23000 (2013); http://dx.doi.org/10.1021/jp408429v

5. (195) S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, J. Kim, C. L Hinkle, M. J Kim, and R. M. Wallace, “HfO2 on MoS2 by Atomic Layer Deposition: Adsorption mechanisms and Thickness Scalability,” ACS Nano, 7, 10354 (2013); http://dx.doi.org/10.1021/nn404775u

6. (194) G. K. Hemani, W. G. Vandenberghe, B. Brennan, Y. J. Chabal, A. V. Walker, R.M. Wallace, M.Quevedo-Lopez, and M. V. Fischetti, “Interfacial graphene growth in the Ni/SiO2 system using pulsed laser deposition,” Applied Physics Letters, 103, 134102 (2013); http://dx.doi.org/10.1063/1.4821944

7. (193) H. Dong, Santosh KC, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R. M. Wallace, “In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP,” Journal of Applied Physics, 114 , 154105 (2013); http://dx.doi.org/10.1063/1.4825218

8. (192) P.K. Hurley, E. O’Connor, R. D. Long, P. C. McIntyre, B. Brennan, R. M. Wallace, V. Djara, S. Monaghan, B. Sheehan, J. Lin, I. M. Povey, M. E. Pemble and K. Cherkaoui, “The characterisation and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS system,” IEEE Trans. on Materials and Device Reliability, 13, 429 (2013) (invited); http://dx.doi.org/10.1109/TDMR.2013.2282216

9. (191) S. J. McDonnell, R. C. Longo, O. Seitz, J. B. Ballard, G. Mordi, D. D. Dick, J. H. G. Owen, J. N. Randall, J. Kim, Y. J. Chabal, K. Cho, and R. M. Wallace, “Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination,” Journal of Physical Chemistry C, 117, 20250 (2013); http://dx.doi.org/10.1021/jp4060022

10. (190) H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ study of atomic layer deposition Al2O3 on GaP (100),” Applied Physics Letters, 103, 121604 (2013);  http://dx.doi.org/10.1063/1.4821779

11. (189) B.Rajamohanan, D.Mohata, D. Zhernokletov, B. Brennan, R. M. Wallace, R. Engel-Herbert, and S. Datta, “Low-Temperature Atomic-Layer-Deposited High- Dielectric for p-channel In0.7Ga0.3As/GaAs0.35Sb0.65 Hetero-junction Tunneling Field-Effect Transistor,” Applied Physics Express, 6, 101201 (2013); http://dx.doi.org/10.7567/APEX.6.101201

12. (188) B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, and R. M. Wallace, “Chemical and electrical characterization of the HfO2/InAlAs interface,” Journal of Applied Physics, 114, 104103 (2013); http://dx.doi.org/10.1063/1.4821021

13. (187) H. Dong, W. Cabrera, R. V. Galatage, Santosh KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace “Indium diffusion through high-k dielectrics in high-k/InP stacks,” Applied Physics Letters, 103, 061601 (2013);  http://dx.doi.org/10.1063/1.4817932

14. (186) C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Applied Physics Letters, 103, 053513 (2013); http://dx.doi.org/10.1063/1.4817409  and Erratum: Applied Physics Letters 107, 139904 (2015); http://dx.doi.org/10.1063/1.4932088

15. (185) D.M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, M. Yakimov, V.Tokranov, and S. Oktyabrsky “An investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100),” Journal of Vacuum Science and Technology A, 31, 060602 (2013); http://dx.doi.org/10.1116/1.4817496

16. (184) L. Colombo, R. M. Wallace and R.S. Ruoff,  "Graphene Growth and Device Integration," (Invited) Proceedings of the IEEE, 101, 1536 (2013);  http://dx.doi.org/10.1109/JPROC.2013.2260114

17. (183) X. Qin, B. Brennan, H. Dong, J. Kim, C. L. Hinkle, and R. M. Wallace, "In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N," Journal of Applied Physics, 113, 244102 (2013);  http://dx.doi.org/10.1063/1.4812243

18. (182) Y. Ai, S. Gowrisanker, H. Jia, M. Quevedo-Lopez, H. N. Alshareef, R. M. Wallace, and B. E. Gnade, "Encapsulation of high frequency organic Schottky diodes," Thin Solid Films, 531, 509 (2013);  http://dx.doi.org/10.1016/j.tsf.2012.12.117

19. (181) D. M. Zhernokletov, P. Laukkanen, H. Dong, R. V. Galatage, B. Brennan, M. Yakimov, V. Tokranov, J. Kim, S. Oktyabrsky, and R. M. Wallace, "Surface and interfacial reaction study of InAs(100)-crystalline oxide interface," Applied Physics Letters, 102, 211601 (2013); http://dx.doi.org/10.1063/1.4807766

20. (180) H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C.L.Hinkle, and R.M. Wallace, In-situ study of HfO2 atomic layer deposition on InP(100), Applied Physics Letters, 102, 171602 (2013); http://dx.doi.org/10.1063/1.4803486

21. (179) R.V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan,C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Electrical and chemical characteristics of Al2O3/InP metal-oxide semiconductor capacitors,” Applied Physics Letters, 102, 132903 (2013); http://dx.doi.org/10.1063/1.4799660

22. (178) D.M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, and R.M. Wallace, "Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited HfO2 on Chemically Treated GaSb Surfaces," Applied Physics Letters, 102, 131602 (2013); http://dx.doi.org/10.1063/1.4800441

23. (177) K. Xiong, W. Wang, D. M. Zhernokletov, Santosh K. C., R. C. Longo, R. M. Wallace, and K. Cho, "Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study," Applied Physics Letters, 102, 022901 (2013); http://dx.doi.org/10.1063/1.4775665  

24. (176) Santosh K. C., W. Wang, H. Dong, K. Xiong, R. C. Longo, R.M. Wallace, and K. Cho, "First principles study on InP (001)-(2x4) surface oxidation," Journal of Applied Physics, 113 103705 (2013); http://dx.doi.org/10.1063/1.4794826

25. (175) B. E. Coss, P. Sivasubramani, B. Brennan, P.Majhi, R. M. Wallace, and J. Kim, "Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques," Journal of Vacuum Science and Technology B 31, 021202 (2013); http://dx.doi.org/10.1116/1.4788805

26. (174) H. Choi, , R. C Longo, M. Huang, J. N Randall, R. M Wallace and K. Cho, "A density-functional theory study of tip electronic structures in scanning tunneling microscopy," Nanotechnology, 24, 105201 (2013); http://stacks.iop.org/Nano/24/105201

27. (173) M. Xu, J. J. Gu, C. Wang, D. M. Zhernokletov, R. M. Wallace, and P. D. Ye, "New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation," Journal of Applied Physics, 113 113711 (2013); http://dx.doi.org/10.1063/1.4772944

2012

1. (172) L. L. Zhang, X. Zhao, H. Ji, M. D. Stoller, L. Lai, S. Murali, S. Mcdonnell, B. Cleveger, R. M. Wallace and R. S. Ruoff, "Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon," Energy and Environmental Science, 5 9618 (2012); http://dx.doi.org/10.1039/c2ee23442d

2. (171) S.McDonnell, A. Pirkle, J. Kim, L. Colombo and R. M. Wallace, "Trimethyl-Aluminum and Ozone Interactions with Graphite in Atomic Layer Deposition," Journal of Applied Physics, 112 104110 (2012); http://link.aip.org/link/doi/10.1063/1.4766408

3. (170) L. Tao, M. Holt, J. Lee, H. Chou, S. J. McDonnell, D.A. Ferrer, M. G. Babenco, R.M. Wallace, S.K. Banerjee, R. S. Ruoff, D.Akinwande,  "Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer," Journal of Physical Chemistry C 116 24068 (2012); http://dx.doi.org/10.1021/jp3068848

4. (169) B. Brennan , X. Qin , H. Dong , J. Kim, and R.M.Wallace, "In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN," Applied Physics Letters, 101 211604 (2012); http://link.aip.org/link/doi/10.1063/1.4767520

5. (168) A. Ismach, H. Chou, D.A. Ferrer, Y. Yu, S. McDonnell, H. C. Floresca, A. Covacevich, C. Pope, R. Piner, M. J. Kim, R. M.Wallace, L.Colombo and R.S. Ruoff, "Towards the Controlled Synthesis of hexagonal Boron Nitride Films," ACS Nano, 6 6378 (2012); http://dx.doi.org/10.1021/nn301940k

6. (167) B. Brennan, M. Milojevic, R. Contreras-Guerrero, H-C. Kim, M. Lopez-Lopez, J. Kim, and R.M.Wallace “Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs,” Journal of Vacuum Science and Technology B 30 04E104 (2012); http://link.aip.org/link/doi/10.1116/1.4721276

7. (166) D. Zhernokletov, H. Dong, B. Brennan, J. Kim, and R.M.Wallace, "Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A," Journal of Vacuum Science and Technology B 30 04E103 (2012); http://dx.doi.org/10.1116/1.4719961 

8. (165) C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, "Metal–Graphene–Metal Sandwich Contacts for Enhanced Interface Bonding and Work Function Control," ACS Nano 6 5381 (2012); http://dx.doi.org/10.1021/nn301241p

9. (164) D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace and B. M. Armstrong, “Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors,” Applied Physics Letters, 100, 195101 (2012); http://dx.doi.org/10.1063/1.4712564

10. (163) G. Mordi, S. Jandhyala, C. Floresca, S. McDonnell, M. Kim, R. M. Wallace, L. Colombo, and J. Kim, “Low-k organic layer as a top gate dielectric for graphene field effect transistors,” Applied Physics Letters, 100, 193117 (2012); http://dx.doi.org/10.1063/1.4711776

11. (162) B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ surface pre-treatment study of GaAs and In0.53Ga0.47As,” Applied Physics Letters, 100, 151603 (2012);  http://dx.doi.org/10.1063/1.3702885

12. (161) S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems,” Applied Physics Letters, 100, 141606 (2012);  http://dx.doi.org/10.1063/1.3700863

13. (160) J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C. Magnuson, R. Ruoff, L. Colombo, R. Wallace, E. Vogel, “Reducing Extrinsic Performance Limiting Factors in Graphene Grown by Chemical Vapor Deposition,” ACS Nano 6, 3224 (2012); http://dx.doi.org/10.1021/nn300107f

14. (159) S. Jandhyala, G. Mordi, B. Lee, G. Lee, C. Floresca, P-R. Cha, J.H. Ahn, R. Wallace, Y. Chabal, M. Kim, L. Colombo, K. Cho, J. Kim “Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone,” ACS Nano, 6, 2722 (2012); http://dx.doi.org/10.1021/nn300167t

15. (158) D.M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R.M. Wallace “In-situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition,” Applied Surface Science, 258, 5522 (2012); http://dx.doi.org/10.1016/j.apsusc.2012.01.132

16. (157) P. Sivasubramani, T.J. Park, B. E. Coss, A. Lucero, J. Huang, B. Brennan, Y. Cao, D. Jena, H. Xing, R.M. Wallace, and J. Kim, “In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates,” Physica Status Solidi Rapid Research Letters, 6 22(2012); http://dx.doi.org/10.1002/pssr.201105417 

2011

1. (156) T.J.Park, P. Sivasubramani, B. E. Coss, B. Lee, R. M. Wallace, J. Kim, M. Rousseau, X. Liu, H. Li, J.-S. Lehn, D. Hong, and D. Shenai, “Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films,” Electrochemical and Solid-State Letters, 14(5) G23-G26 (2011); http://dx.doi.org/10.1149/1.3545965

2. (155) M Engelhard, J Herman, R Wallace, and D Baer,“As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS,” Surface Science Spectra 18, 46 (2011); http://dx.doi.org/10.1116/11.20100601

3. (154) B. Brennan, H. Dong, D. Zhernokletov, J. Kim, and R. M.Wallace, “Surface and interface reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces,” Applied Physics Express, 4, 125701 (2011) http://dx.doi.org/10.1143/APEX.4.125701

4. (153) J-F. Veyan, H. Choi, M. Huang, R.C. Longo, J.B. Ballard, S. McDonnell, M. P. Nadesalingam, H. Dong, I. S. Chopra, J.H. G. Owen, W.P. Kirk, J. N. Randall, R. M. Wallace, K. Cho, and Y. J. Chabal, “Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(2x1) and Ge(100)-(2x1),” Journal of Physical Chemistry C, 115, 24534 (2011). http://dx.doi.org/10.1021/jp207086u

5. (152) A. Posadas, M. Berg, H. Seo, D.J. Smith, A.P. Kirk, D. Zhernokletov, R.M. Wallace, A. de Lozanne, and A.A. Demkov, “Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (100)” Microelectronic Engineering 88, 1444 (2011); http://dx.doi.org/10.1016/j.mee.2011.03.108

6. (151) B. Chakrabarti, H. Kang, B. Brennan, T. J. Park, K. D. Cantley, A. Pirkle, S. McDonnell, J. Kim, R. M. Wallace, and E. M. Vogel, “Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications,” IEEE Transactions on Electron Devices, 58, 4189 (2011); http://10.1109/TED.2011.2170198

7. (150) R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters, 99, 172901 (2011); http://dx.doi.org/10.1063/1.3588255

8. (149) W. Wang, K, Xiong , R. M. Wallace , and K. Cho, “First-Principles Study of Initial Growth of GaΧO Layer on GaAs-β2(2×4) Surface and Interface Passivation by F,” Journal of Applied Physics, 110, 103714 (2011);  http://dx.doi.org/10.1063/1.3662892

9. (148) A.Herrera-Gomez, F.S. Aguirre-Tostado, P.G.Mani-Gonzalez, M. Vazquez-Lepe, A. Sanchez-Martinez, O. Ceballos-Sanchez, R.M.Wallace, G. Conti, and Y. Uritsky, “Instrument-related geometrical factors affecting the intensity in XPS and ARXPS experiments,” Journal of Electron Spectroscopy and Related Phenomenon, 184, 487 (2011); http://dx.doi.org/10.1016/j.elspec.2011.08.002

10. (147) A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff and R. M. Wallace, “The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2,” Applied Physics Letters, 99, 122108 (2011); http://dx.doi.org/10.1063/1.3643444

11. (146) B.E. Coss, W-Y Loh , H. C. Floresca , M. J. Kim , R.M. Wallace , J. Kim , R. Jammy , P. Majhi, “Dielectric Dipole Mitigated Schottky Barrier Height Tuning Using Atomic Layer Deposited Aluminum Oxide For Contact Resistance Reduction,” Applied Physics Letters, 99, 102108 (2011); http://dx.doi.org/10.1063/1.3633117

12. (145) M. Acik, G. Lee, C. Mattevi, A. Pirkle, R. Wallace, M. Chhowalla, K. Cho, and Y. Chabal, "The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy," Journal of Physical Chemistry C, 115, 19761 (2011); http://.dx.doi.org/10.1021/jp2052618

13. (144) W. Wang, C.L. Hinkle, E.M. Vogel, K. Cho, R.M. Wallace “Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?” Microelectronic Engineering 88, 1061 (2011); http://dx.doi.org/10.1016/j.mee.2011.03.053

14. (143) M. Milojevic, R. Contreras-Guerrero, E. O’Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace, “In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition,” Applied Physics Letters, 99, 042904 (2011); http://dx.doi.org/10.1063/1.3615666

15. (142) W. Wang, C. Gong, B. Shan, R. M. Wallace, and K. Cho, “Sulfur passivation effect on HfO2/GaAs interface: A first-principles study,” Applied Physics Letters, 98, 232113 (2011); http://dx.doi.org/10.1063/1.3597219

16. (141) S. McDonnell, D.M. Zhernokletov, A.P. Kirk, J. Kim and R.M. Wallace “In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution,” Applied Surface Science, 257, 8747 (2011); http://dx.doi.org/10.1016/j.apsusc.2011.05.034

17. (140) Y. Zhu, S. Murali, M.D. Stoller, K. J. Ganesh, W Cai, P. J. Ferreira, A. Pirkle, R. M. Wallace, K.A. Cychosz, M. Thommes, D. Su, E. A. Stach, R. S. Ruoff, "Supercapacitors with a Novel Carbon Produced by Activation of Graphene," Science, 332(6037), 1537 (2011); http://dx.doi.org/10.1126/science.1200770

18. (139) B. E. Coss, C. Smith, W-Y. Loh, P. Majhi, R. M Wallace, J. Kim, and R. Jammy, “Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method,” IEEE Electron Device Letters, 32, 862 (2011); http://dx.doi.org/10.1109/LED.2011.2148091

19. (138) A. Posadas, M. Berg, H. Seo, A. de Lozanne, A. A. Demkov, D. J. Smith, A. P. Kirk, D. Zhernokletov, and R. M. Wallace, “Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si(100),” Applied Physics Letters, 98, 053104 (2011); http://dx.doi.org/10.1063/1.3549301

20. (137) A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, and E. M. Vogel “On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors,” Applied Physics Letters, 98, 193501 (2011); http://dx.doi.org/10.1063/1.3597219

21. (136) C.L.Hinkle, E.M.Vogel, P.D.Ye and R.M.Wallace, “Interfacial Chemistry of Oxides on InxGa(1-x)As and implications for MOSFET applications,” Current Opinion in Solid State and Materials Science, 15, 188 (2011) (Invited); http://dx.doi.org/10.1016/j.cossms.2011.04.005 

22. (135) W. Wang, K Xiong, R. M. Wallace and K.J. Cho “Si Passivation Effects on Atomic Bonding and Electronic Properties at HfO2/GaAs interface: A first-principles study,” Journal of Applied Physics, 109, 063704 (2011); http://dx.doi.org/10.1063/1.3554689

23. (134) É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R.Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, and P.K. Hurley. “A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers,” Journal of Applied Physics, 109, 024101  (2011); http://dx.doi.org/10.1063/1.3533959

24. (133) B. Brennan, M.Milojevic, C.L.Hinkle, F.S.Aguirre-Tostado, G.Hughes, and R.M.Wallace “Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As,” Applied Surface Science, 257, 4028 (2011); http://dx.doi.org/10.1016/j.apsusc.2010.11.179

2010

1. (132) C. Gong, G.Lee, B. Shan, E.M. Vogel, R. M. Wallace, and K.J.Cho, “First-principles study of metal-graphene interfaces,” Journal of Applied Physics 108, 123711 (2010). http://dx.doi.org/10.1063/1.3524232

2. (131) W. Wang, K. Xiong, R. M. Wallace and K.J. Cho, “Impact of Interfacial Oxygen Content on Bonding, Stability, Band offsets and Interface States of GaAs:HfO2 Interfaces,” Journal of Physical Chemistry C 114, 22610 (2010). http://dx.doi.org/10.1021/jp107880r

3. (130) A.Ali, A.P.Kirk, H. S. Madan, A. P. Kirk, D. A. Zhao, D. A. Mourey, M. K. Hudait, R. M. Wallace, T. N. Jackson, B. R. Bennett, J. B. Boos, and S. Datta, “Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3,” Applied Physics Letters 97, 143502 (2010). http://dx.doi.org/10.1063/1.3492847

4. (129) D.R. Baer, M.H. Engelhard, A.S. Lea, P. Nachimuthu, T.C. Droubay, J.Kim, B.Lee, C. Mathews, R.L. Opila, L.V. Saraf, W.F. Stickle, R.M. Wallace, and B.S.Wright, “Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2” Journal of Vacuum Science and Technology A 28, 1060 (2010). http://dx.doi.org/10.1116/1.3456123

5. (128) T.J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, M.Rousseau, X. Liu, H. Li, J. S. Lehn, D. Hong, and D. Shenai, “Effects of O3 and H2O oxidants on C and N-related impurities in atomic layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy” Applied Physics Letters 97, 092904 (2010). http://dx.doi.org/10.1063/1.3481377

6. (127) A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo and R. M. Wallace “The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition” Applied Physics Letters 97, 082901 (2010).  http://dx.doi.org/10.1063/1.3479908

7. (126) W. Wang, K. Xiong, G. Lee, M. Huang, R. M. Wallace, and K.J. Cho “Origin of HfO2/GaAs interface states and interface passivation: A first principles study,” Applied Surface Science 256, 6559 (2010) dx.doi.org/10.1016/j.apsusc.2010.04.048

8. (125) B. Lee, G. Mordi, M. J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, K. J. Cho, L. Colombo and J. Kim, “Characteristics of High-k Al2O3 Dielectric Using Ozone-Based Atomic Layer Deposition for Dual-Gated Graphene Devices” Applied Physics Letters 97, 043107 (2010).  http://dx.doi.org/10.1063/1.3467454

9. (124) A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace, An in situ examination of atomic layer deposited alumina/InAs(100) interfaces,” Applied Physics Letters 96, 202905 (2010). http://dx.doi.org/10.1063/1.3432749

10. (123) T.J. Park, K.J. Chung, H-C.l Kim, J. Ahn, R. M. Wallace, and J. Kim, “Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O3 Oxidant Generated Without N2 Assistance,” Electrochemical and Solid State Letters 13, G65 (2010). http://dx.doi.org/10.1149/1.3430657

11. (122) A. Herrera-Gomez, Y. Sun, F.-S. Aguirre-Tostado, C. Hwang, P.-G.Mani-Gonzalez, E. Flint, F. Espinosa-Magaña, and R. M. Wallace “Structure of Ultra-Thin Diamond-Like Carbon Films Grown with Filtered Cathodic Arc on Si(001),” Analytical Sciences 26, 267 (2010); http://dx.doi.org/10.2116/analsci.26.267

12. (121) W. Wang, G. Lee, M. Huang, R. M. Wallace, and K.J. Cho “First-principles study of GaAs (001)x2-(2x4) surface oxidation and passivation with H, Cl, S, F, and GaO," Journal of Applied Physics 107, 103720 (2010). http://dx.doi.org/10.1063/1.3369540

2009

1. (120) W. Wang, G. Lee, M. Huang, R. M. Wallace, and K.J. Cho “First-principles study of GaAs(0 0 1)-b2(2 x 4) surface oxidation,” Microelectronic Engineering (2009) http://dx.doi.org/10.1016/j.mee.2009.11.006

2. (119) M. P. Kanouff, J. N. Randall, M. Nadesalingham, W. P. Kirk, and R. M. Wallace “High rate gas dosing for tip based nanofabrication processes,” Journal of Vacuum Science and Technology B 27, 2769 (2009). http://dx.doi.org/10.1116/1.3259955

3. (118) B.E.Coss, W.-Y.Loh, R. M. Wallace, J.Kim, P.Majhi, and R.Jammy “Near band edge Schottky barrier height modulation using high-k dielectric dipole tuning mechanism,”  Applied Physics Letters 95, 222105 (2009).  http://dx.doi.org/10.1063/1.3263719

4. (117) M. Milojevic, R. Contreras-Guerrero, M. Lopez-Lopez, J. Kim and R. M. Wallace “Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition,” Applied Physics Letters 95, 212902 (2009). http://dx.doi.org/10.1063/1.3268449

5. (116) O. Seitz, M. Dai, F. S. Aguirre-Tostado, R. M. Wallace, and Y. J. Chabal “Copper-Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices,” Journal of the American Chemical Society 131(50) 18159 (2009). http://dx.doi.org/10.1021/ja907003w

6. (115) C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace “The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding,” Applied Physics Letters 95, 151905 (2009).  http://dx.doi.org/10.1063/1.3249577

7. (114) A. Pirkle, L.Colombo and R.M.Wallace “In-situ Studies of Al2O3 and HfO2 Dielectrics on Graphite,” Applied Physics Letters 95, 133106  (2009). http://dx.doi.org/10.1063/1.3238560

8. (113) M. I. Medina-Montes, M. V. Selvidge, A. Herrera-Gomez, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez, and R. M. Wallace “Thermal stability of lanthanum in hafnium-based gate stacks,” Journal of Applied Physics 106 053506 (2009). http://dx.doi.org/10.1063/1.3190505

9. (112) A. Herrera-Gomez, J. T. Grant, P. J. Cumpson, M. Jenko, F. S. Aguirre-Tostado, C. R. Brundle, T. Conard, G. Conti, C. S. Fadley, J. Fulghum, K. Kobayashi, L. Kover, l H. Nohira, R. L. Opila, S. Oswald, R. W. Paynter, R. M. Wallace, W. S. M. Werner and J.Wolstenholme, “Report on the 47th IUVSTA Workshop, Angle-Resolved XPS: the current status and future prospects for angle-resolved XPS of nano and subnano films,” Surface and Interface Analysis (2009). http://dx.doi.org/10.1002/sia.3105

10. (111) B. Brennan, M. Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, and R. M. Wallace “Half-Cycle Atomic Layer Deposition Reaction Study Using O3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As,” Electrochemical and Solid State Letters 12(6) H205 (2009). http://dx.doi.org/10.1149/1.3109624

11. (110) C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace “Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning,” Applied Physics Letters 94 162101(2009). http://dx.doi.org/10.1063/1.3120546

12. (109) B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J. Yi, M. Rousseau , D. Shenai, J. Suydam “Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone,” Microelectronic Engineering 86 (7-9) 1658 (2009). http://dx.doi.org/10.1016/j.mee.2009.03.056

13. (108) C.L. Hinkle, M. Milojevic, E.M. Vogel and R.M. Wallace “Surface passivation and implications on high mobility channel performance,” Microelectronic Engineering 86 (7-9) 1544 (2009) (Invited). http://dx.doi.org/10.1016/j.mee.2009.03.030

14. (107) B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau, and J. Suydam, “A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films,” Microelectronic Engineering 86(3) 235 (2009). http://dx.doi.org/10.1016/j.mee.2008.03.020

15. (106) B.S. Coss , H.-C.l Kim, F. S. Aguirre-Tostado, R. M. Wallace, and J. Kim, “Role of lanthanum in the gate stack: Co-sputtered TaLaN metal gates on Hf-based dielectrics,” Microelectronic Engineering 86(3) 235 (2009). http://dx.doi.org/10.1016/j.mee.2008.05.027

16. (105) P. Patel, M. Nadesalingam, R. M. Wallace, and D. A. Buchanan “Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes,” Journal of Applied Physics 105, 024517 (2009). http://dx.doi.org/10.1063/1.3072698

2008

1. (104) P. Zhao, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Dopant effects on the thermal stability of FUSI NiSi,”  Microelectronic Engineering 85, 54 (2008). http://dx.doi.org/10.1016/j.mee.2007.05.001

2. (103) C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, “GaAs interfacial self-cleaning by atomic layer deposition,” Applied Physics Letters 92, 071901 (2008). http://dx.doi.org/10.1063/1.2883956

3. (102) F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes, “Indium stability on InGaAs during atomic H surface cleaning,” Applied Physics Letters 92, 171906 (2008). http://dx.doi.org/10.1063/1.2919047

4. (101) B.Lee, S.-Y. Park, H.-C. Kim, K. Cho, E. M. Vogel, M. J. Kim, R. M. Wallace, and J. Kim, “Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics,”  Applied Physics Letters 92, 203102 (2008). http://dx.doi.org/10.1063/1.2928228

5. (100) F.S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle, E.M. Vogel, J. Kim, R.M. Wallace, T. Yang, Y. Xuan and P.D. Ye, “S-passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates,” Applied Physics Letters 93, 061907 (2008). http://dx.doi.org/10.1063/1.2961003

6. (99) C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics ,” Applied Physics Letters 93, 113506 (2008). http://dx.doi.org/10.1063/1.2987428

7. (98) M. Milojevic , C.L.Hinkle, F. Aguirre-Tostado , H.C. Kim , E,M,Vogel, J. Kim, and R.M.Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces,” Applied Physics Letters 93 252905 (2008). http://dx.doi.org/10.1063/1.3054348

8. (97) A. Herrera-Gomez, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez, P. D. Kirsch, M. J. Kim, and R. M. Wallace, “Thermal stability of nitrogen in nitrided HfSiO2 /SiO2/Si(001) ultrathin films,” Journal of Applied Physics 104, 103520 (2008). http://dx.doi.org/10.1063/1.3021051

9. (96) F. S. Aguirre-Tostado, M. Milojevic, B. Lee, J. Kim, and R. M. Wallace, “In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As,” Applied Physics Letters 93, 172907 (2008). http://dx.doi.org/10.1063/1.3009303

10. (95) M. Milojevic , F. Aguirre-Tostado , C.L.Hinkle, H.C. Kim , E.M.Vogel, J. Kim, and R.M.Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces,” Applied Physics Letters 93 202902 (2008). http://dx.doi.org/10.1063/1.3033404

11. (94) A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, “Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer, “Applied Physics Letters 93, 122109 (2008). http://dx.doi.org/10.1063/1.2991340

2007

1. (93) P. Zhao, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-k gate stacks,”  Journal of Applied Physics 101, 053504 (2007); http://dx.doi.org/10.1063/1.2434808 

2. (92) H. Jia, E. K. Gross, R. M. Wallace, and B. E. Gnade, “Patterning effects on poly (3-hexylthiophene) organic thin film transistors using photolithographic processes,” Organic Electronics 8, 45 (2007); http://dx.doi.org/10.1016/j.orgel.2006.10.009

3. (91) P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100),” Journal of Applied Physics 101, 114108 (2007); http://dx.doi.org/10.1063/1.2743818

4. (90) C. Dreimeier, R.M.Wallace and I.J.R.Baumvol, “Oxygen species in HfO2 films: An in situ x-ray photoelectron spectroscopy study,” Journal of Applied Physics 102, 024112 (2007); http://dx.doi.org/10.1063/1.2759198

5. (89) Y. Ai, S. Gowrisanker, H. Jia, I.Trachtenberg, E.Vogel, R.M. Wallace, B. E. Gnade, R.Barnett, H.Stiegler, and H.Edwards, “14 MHz organic diodes fabricated using photolithographic processes,” Applied Physics Letters 90, 262105 (2007);  http://dx.doi.org/10.1063/1.2752533

6. (88) F.S. Aguirre-Tostado, D. Layton, A. Herrera-Gomez, J. Zhu, G. Larrieu, E. Maldonado, W.P. Kirk, M. Tao and R.M. Wallace, “X-ray Photoelectron Spectroscopy study of the oxidation of Se-passivated Si(001),” Journal of Applied Physics 102, 084901 (2007); http://dx.doi.org/10.1063/1.2794858

7. (87) T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y. Q. Wu, J. M. Woodall, P. D. Ye, F. S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R. M. Wallace, “Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric,” Applied Physics Letters 91, 142122 (2007); http://dx.doi.org/10.1063/1.2798499

8. (86) C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace, “Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation,” Applied Physics Letters 91, 163512 (2007); http://dx.doi.org/10.1063/1.2801512

9. (85) T. Zheng, H. Jia, R. M. Wallace, and B. E. Gnade, “C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe,” Review of Scientific Instruments 78, 104702 (2007); http://dx.doi.org/10.1063/1.2789660

10. (84) A. Herrera-Gomez, F. S. Aguirre-Tostado, Y. Sun, R. Contreras-Guerrero, R. M. Wallace, Y. Hisao and E. Flint, “Quantification of pinhole density in ultrathin diamond-like carbon films,” Surface Interface Analysis 39: 904 (2007); http://dx.doi.org/10.1002/sia.2622

2006

1. (83) P. Sivasubramani, T.H. Lee, M. J. Kim, J. Kim, B. E. Gnade, and R. M. Wallace, L. F. Edge and D. G. Schlom , F. A. Stevie, R. Garcia, Z. Zhu and D.P. Griffis, “The Thermal Stability of Lanthanum Scandate Dielectrics on Si (100),” Applied Physics Letters 89, 242907 (2006).  http://dx.doi.org/10.1063/1.2392992

2. (82) P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade and R. M. Wallace, “The Effect of Nitrogen Incorporation on the Thermal Stability of Sputter Deposited Lanthanum Aluminate Dielectrics on Si (100),” Applied Physics Letters 89, 152903 (2006).  http://dx.doi.org/10.1063/1.2361170

3. (81) G. Pant , A. Gnade , M. Kim , R.M. Wallace , B.E.Gnade, M. Quevedo-Lopez , P. Kirsch , and S. Krishnan, “Comparison of electrical and chemical characteristics of ultrathin HfON vs. HfSiON dielectrics,” Applied Physics Letters 89, 032904 (2006).  http://dx.doi.org/10.1063/1.2226991

4. (80) P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, B. H. Lee, G. Pant, M. J. Kim, R. M. Wallace, and B. E. Gnade, “Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics,” Applied Physics Letters 89 (2006) 242909. http://dx.doi.org/10.1063/1.2392992

5. (79) L. F. Edge, D.G .Schlom, P. Sivasubramani, R.M. Wallace, B. Holländer, and J.Schubert, “Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon,” Applied Physics Letters 88, 112907 (2006) http://dx.doi.org/10.1063/1.2182019

6. (78) T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “Characterization of conductance under finite bias for a Self -Assembled Monolayer coated Au Quantized Point Contact,” Applied Surface Science 253, 1265 (2006).  http://dx.doi.org/10.1016/j.apsusc.2006.01.070

7. (77) T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “Stabilization of Au Quantum Point Contacts by Self-Assembled Monolayers, ” Applied Surface Science 252, 8261 (2006). http://dx.doi.org/10.1016/j.apsusc.2005.10.061

8. (76) G. Pant , A. Gnade , M. Kim , R.M. Wallace , B.E.Gnade, M. Quevedo-Lopez , P. Kirsch, “Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics ,” Applied Physics Letters 88, 032901 (2006). http://dx.doi.org/10.1063/1.2165182

9. (75) H. Jia, G. K. Pant, E. K. Gross, R. M. Wallace, and B. E. Gnade, “Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties,” Journal of Vacuum Science and Technology A24, 1228 (2006). http://dx.doi.org/10.1116/1.2202858

10. (74) H. N. Alshareef, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R. Jammy, S. Aguirre-Tostado, B. E. Gnade, and R. M. Wallace, “Composition dependence of the work function of Ta1−xAlxNy metal gates,” Applied Physics Letters 88, 072108 (2006). http://dx.doi.org/10.1063/1.2174836

11. (73) P. Zhao, I.Trachtenberg, M.J. Kim, B.E. Gnade and R.M.Wallace, “Ni diffusion studies from fully-silicided NiSi into Si,” Electrochemical and Solid. State Letters 9, G111 (2006). http://dx.doi.org/10.1149/1.2167927

12. (72) H. Jia, G. K. Pant, E. K. Gross, R. M. Wallace, and B. E. Gnade, “Gate induced leakage and drain current offset in organic thin film transistors,” Organic Electronics 7, 16 (2006). http://dx.doi.org/10.1016/j.orgel.2005.10.003

13. (71) C. Driemeier, L. Miotti, I. J. R. Baumvol, C. Radtke, E. P. Gusev, M. J. Kim and R. M. Wallace, “Interaction of HfO2/SiO2/Si structures with deuterium gas,” Applied Physics Letters 88, 041918 (2006). http://dx.doi.org/10.1063/1.2168501

2005

1. (70) M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, and R. M. Wallace, “Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability,” Applied Physics Letters 87, 262902 (2005); http://dx.doi.org/10.1063/1.2150586

2. (69) P. Sivasubramani, M. J. Kim, B. E. Gnade,  R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft and J.-P. Maria, “Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001),” Applied Physics Letters 86  201901 (2005); http://dx.doi.org/10.1063/1.1928316

3. (68) M.A. Quevedo-Lopez, M.R. Visokay, J.J. Chambers, M.J. Bevan, A. Lifatou, L. Colombo, M.J. Kim, B.E. Gnade, and R.M. Wallace, “Dopant Penetration Studies through Hf Silicate”, Journal of Applied Physics 97 043508 (2005); http://dx.doi.org/10.1063/1.1846138

4. (67) A. Ranade, N.A. D’Souza, R.M.Wallace and B.E.Gnade , “High Sensitivity Gas Permeability Measurement System for Thin Plastic Films,” Review of Scientific Instruments 76  013902 (2005); http://dx.doi.org/10.1063/1.1823792

5. (66) A.Jakubowicz, H. Jia, R.M.Wallace and B.E.Gnade, “Adsorption kinetics of p-Nitrobenzenethiol self-assembled monolayers on a gold surface,” Langmuir 21, 950 (2005); http://dx.doi.org/10.1021/la048308h

6. (65) C. Driemeier, K.P. Bastos, G.V. Soares, L. Miotti, R.P. Pezzi and J. Morais, I.J. R. Baumvol, R.M. Wallace, and B.E. Gnade, “Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics,” Applied Physics A: Materials Science & Processing 80 1045 (2005); http://dx.doi.org/10.1007/s00339-004-3037-8

2004

1. (64) R.P. Pezzi, L. Miotti, K.P. Bastos, G.V. Soares, C. Driemeier, I.J.R. Baumvol, P. Punchaipetch, G. Pant, B.E. Gnade, R.M. Wallace, A. Rotondaro, J. M. Visokay, J. J. Chambers, and L. Colombo “Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon,” Applied Physics Letters 85  3504 (2004); http://dx.doi.org/10.1063/1.1801682

2. (63) R.M.Wallace, “Challenges for the characterization and integration of high-k dielectrics,” Applied Surface Science 231-232, 543 (2004); http://dx.doi.org/10.1016/j.apsusc.2004.03.056

3. (62) K.P. Bastos, C. Driemeier, R.P. Pezzi, G.V. Soares, L. Miotti, J. Morais, I.J.R. Baumvol, and R. M. Wallace, “Thermal stability of Hf-based high-k dielectric films on silicon for advanced CMOS devices,” Materials Science and Engineering B112, 134 (2004).

4. (61) S. Addepalli, P. Sivasubramani, M. El-Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Deposition of Hf-silicate gate dielectric on SixGe1-x(100): Detection of interfacial layer growth”, Journal of Vacuum Science and Technology A22, 616 (2004); http://dx.doi.org/10.1116/1.1710494

5. (60) J. Wu, P. Punchaipetch, R.M. Wallace, and J.L. Coffer “Fabrication and optical properties of erbium-doped germanium nanowires ,”Advanced Materials 16 (16) 1444 (2004);     http://dx.doi.org/10.1002/adma.200400162

6. (59) R. Chan, T.N. Arunagiri, Y.Zhang, O. Chyan, R. M. Wallace, M. J. Kim, T.Q. Hurd, “Diffusion studies of copper on ruthenium thin film,” Electrochemical and Solid-State Letters 7(8) p. G154-7 (2004);  http://dx.doi.org/10.1149/1.1757113

7. (58) Y. Zhang, L. Huang, T.N. Arunagiri, O. Ojeda, S. Flores, O. Chyan, and R.M. Wallace, “Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface,” Electrochemical and Solid-State Letters, 7(9) p. C107-10 (2004); http://dx.doi.org/10.1149/1.1784051

8. (57) S. Addepalli, P. Sivasubramani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “The electrical properties and stability of the hafnium silicate-Si0.8Ge0.2(100) interface,” Journal of Electronic Materials 33 1016 (2004); http://dx/doi.org/10.1007/s11664-004-0029-6

9. (56) G. Pant, P. Punchaipetch, M. J. Kim, R. M. Wallace and B. E. Gnade, “Low Temperature UV/ozone oxidation formation of HfSiON gate dielectric,” Thin Solid Films 460, 242 (2004); http://dx.doi.org/10.1016/j.tsf.2004.01.109

10. (55) P. Punchaipetch, G. Pant, M. J. Kim, R. M. Wallace and B. E. Gnade, “Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation,” Journal of Vacuum Science and Technology A 22, 395 (2004); http://dx.doi.org/10.1116/1.1649346

11. (54) P. Punchaipetch, Gaurang Pant, M. Quevedo-Lopez, C. Yao, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade, “Low temperature deposition of hafnium silicate gate dielectrics”, IEEE Journal on Selected Topics in Quantum Electronics 10, 89 (2004) (Invited Paper); http://dx.doi.org/10.1109/JSTQE.2004.824109

2003

1. (53) R.M.Wallace and G. Wilk, “High-k Dielectric Materials for Microelectronics,” Critical Reviews in Solid State and Materials Sciences 28, 231 (2003) (Invited Review);http://dx.doi.org/10.1080/714037708

2. (52) M.J. Kim, J. Huang, D.K. Cha, M.A. Quevedo-Lopez, R.M. Wallace, and B.E. Gnade, “Thermal Stability of Hf-based High- κ Dielectric Films on Si(100),” Microscopy and  Microanalysis 9(Suppl 2), (2003) 506; http://journals.cambridge.org/article_S1431927603442530

3. (51) A.Q. Wang, P.Punchaipetch, R. M. Wallace and T. D. Golden, “X-ray photoelectron spectroscopy study of electrodeposited nanostructured CeO2 films,” Journal of Vacuum Science and Technology B 21(3) (2003) 1169; http://dx.doi.org/10.1116/1.1577569

4. (50) M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B. E. Gnade, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, and R. M. Wallace, “Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films”, Applied Physics Letters 82, 4669 (2003); http://dx.doi.org/10.1063/1.1586483  and  http://dx.doi.org/10.1063/1.1606888

5. (49) P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H.Zhang, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade. “Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide,” Thin Solid Films Letters 425 (2003) 68; http://dx.doi.org/10.1016/S0040-6090(02)01306-8

2002

1. (48) M. A. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace and B. E. Gnade, “Wet Chemical Etching Studies of Zr and Hf-silicate Gate Dielectrics,” Journal of Vacuum Science and Technology A 20(6) (2002) 1891; http://dx.doi.org/10.1116/1.1507343

2. (47) M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo, “Interdiffusion Studies for HfSixOy and ZrSixOy on Si,” Journal of Applied Physics 92 (2002) 3540; http://dx.doi.org/10.1063/1.1501752

3. (46) M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, “ Phosphorus and Arsenic Penetration Studies through HfSixOy and HfSixOyNz films,” Applied Physics Letters 81 (2002) 1609; http://dx.doi.org/10.1063/1.1502910

(45) M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, “Boron Penetration Studies from p+ Polycrystalline-Si through HfSixOy,” Applied Physics Letters 81 1074 (2002); http://dx.doi.org/10.1063/1.1498872

1. (44) R.M.Wallace and G.D.Wilk, “High-k Gate Dielectric Materials”, MRS Bulletin (Special Issue), March (2002), pp.186-197; http://dx.doi.org/10.1557/mrs2002.70

2001

1. (43) M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, and L. Colombo, “Hafnium interdiffusion studies from hafnium silicate into Silicon,” Applied Physics Letters, 79  4192 (2001); http://dx.doi.org/10.1063/1.1425466

2. (42) M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, M.J.Bevan and L. Colombo, “Thermally induced Zr incorporation into Si from zirconium silicate thin films,” Applied Physics Letters, 79  2958 (2001); http://dx.doi.org/10.1063/1.1415418 

3. (41) G.D.Wilk, R.M.Wallace, and J.M.Anthony, “High-k Gate Dielectrics: Current Status and Materials Properties Considerations”, Journal of Applied Physics 89  5243 (2001) (Invited Review); http://dx.doi.org/10.1063/1.1361065

4. (40) Q.Zhang, S. Tang and R.M.Wallace, “Proton trapping and diffusion in SiO2 thin films: a first-principles study”, Applied Surface Science 172  41 (2001);http://dx.doi.org/10.1016/S0169-4332(00)00839-4

 2000

1. (39) G.D.Wilk and R.M.Wallace, “Stable Zirconium Silicate Gate Dielectrics Deposited Directly on Si”, Applied Physics Letters 76  112 (2000).  http://dx.doi.org/10.1063/1.125673

2. (38) G.D.Wilk, R.M.Wallace, and J.M.Anthony, “Hafnium and Zirconium Silicates for Advanced Gate Dielectrics”, Journal of Applied Physics 87  484 (2000);http://dx.doi.org/10.1063/1.371888

1999

1. (37) R.M.Wallace, P.J.Chen, L.B.Archer and J.M.Anthony, “Deuterium Sintering of SOI structures: D diffusion and replacement reactions at the SiO2/Si Interface”, Journal of Vacuum Science and Technology B 17  2153 (1999); http://dx.doi.org/10.1116/1.590885

2. (36) P.J.Chen and R.M.Wallace. “Deuterium Transport through Device Structures”, Journal of Applied Physics 86  2237(1999); http://dx.doi.org/10.1063/1.371036

3. (35) G.D.Wilk, and R.M.Wallace “Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Si”, Applied Physics Letters 74  2854 (1999); http://dx.doi.org/10.1063/1.124036

4. (34) R.M.Wallace and Y.Wei, “Dry Oxidation Resistance of Ultrathin Nitride Films: Ordered and Amorphous Silicon Nitride on Si(111)”, Journal of Vacuum Science and Technology B 17  970 (1999); http://dx.doi.org/10.1116/1.591101

5. (33) B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Interaction of Water with Spindt-type Mo Field Emitter Arrays”, Journal of Vacuum Science and Technology B 17  303 (1999); http://dx.doi.org/10.1116/1.590554

1998

1. (32) P.J.Chen and R.M.Wallace, “Examination of Deuterium Transport through Device Structures”, Applied Physics Letters 73  3441 (1998);http://dx.doi.org/10.1063/1.122791

2. (31) B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Effect of CH4 on the Electron Emission Characteristics of Active Mo Field Emitter Arrays”, Journal of Vacuum Science and Technology B16  3073 (1998); http://dx.doi.org/10.1116/1.590444

3. (30) B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Surface Conditioning of Active Molybdenum Field Emission cathode Arrays with Hydrogen and Helium”, Journal of Vacuum Science and Technology B16  2855 (1998); http://dx.doi.org/10.1116/1.590284

4. (29) B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Effect of Oxygen on the Electron Emission Characteristics of Active Mo Field Emission Cathode Arrays”, Journal of Vacuum Science and Technology B16  2859 (1998); http://dx.doi.org/10.1116/1.590285

5. (28) B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Poisoning of Spindt-type Molybdenum Field Emitter Arrays by CO2”, Journal of Vacuum Science and Technology B16  2866 (1998); http://dx.doi.org/10.1116/1.590240

6. (27) B.Kaczer, H.-J.Ihm, J.P.Pelz and R.M.Wallace, “Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy”, Applied Physics Letters 73  1871 (1998); http://dx.doi.org/10.1063/1.122310  and http://dx.doi.org/10.1063/1.123041

7. (26) W.L.Warren, D.M.Fleetwood, J.R.Schwank, M.R.Shaneyfelt, B.L.Draper, P.S.Winokur, M.G.Knoll, K.Vanheusden, R.A.B.Devine, L.B.Archer, G.A.Brown and R.M.Wallace, “Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films”, Applied Physics Letters 73  674 (1998);http://dx.doi.org/10.1063/1.121944

8. (25) P. J. Chen, R. M. Wallace, and S. A. Henck, "Thermal properties of perfluorinated n-alkanoic acids self-assembled on native aluminum oxide surfaces", Journal of Vacuum Science and Technology A 16  700 (1998); http://dx.doi.org/10.1116/1.581019

9. (24) H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, and K. Harvey, "Electrical and physical characterization of deuterium sinter on submicron devices", Applied Physics Letters 72 1721 (1998);  http://dx.doi.org/10.1063/1.121163

10. (23) S.Tang, R.M.Wallace, A.Seabaugh and D.King-Smith, “Evaluating the minimum thickness of gate oxide on silicon using first-principles method”, Applied Surface Science 135  137 (1998); http://dx.doi.org/10.1016/S0169-4332(98)00286-4

1997

1. (22) Z.H.Lu, J.P.McCaffery, B.Brar, G.D.Wilk, R.M.Wallace, L.C.Feldman and S.P.Tay, “SiO2 film thickness metrology by x-ray photoelectron spectroscopy”, Applied Physics Letters 71  2764 (1997); http://dx.doi.org/10.1063/1.120438

2. (21) Y.Wei, R.M.Wallace and A.C.Seabaugh, “Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes”, Journal of Applied Physics 81  6415 (1997); http://dx.doi.org/10.1063/1.364422

3. (20) W.L.Warren, D.M.Fleetwood, J.R.Schwank, M.R.Shaneyfelt, B.L.Draper, P.S.Winokur, M.G.Knoll, K.Vanheusden, R.A.B.Devine, L.B.Archer and R.M.Wallace, “Protonic Nonvolatile Field Effect Transistor Memories in Si/SiO2/Si structures”, IEEE Transactions in Nuclear Science 44  1789 (1997); http://dx.doi.org/10.1109/23.658944

4. (19) S.Tang, Y.Wei and R.M.Wallace, “Energetics of void enlargement in thermally grown ultrathin Si-oxide on Si(001)”, Surface Science Letters 387  L1057 (1997);http://dx.doi.org/10.1016/S0039-6028(97)00469-X

5. (18) G.D.Wilk, Y.Wei, H.Edwards and R.M.Wallace, “In-situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperatures" Applied Physics Letters 70  2288 (1997); http://dx.doi.org/10.1063/1.119083

<1996

1. (17) Y.Wei, R.M.Wallace and A.C.Seabaugh, “Void formation on ultrathin thermal silicon oxide films on the Si(100) surface”, Applied Physics Letters 69  1270 (1996); http://dx.doi.org/10.1063/1.117388

2. (16) R.M.Wallace, P.J.Chen, S.A.Henck and D.A.Webb, “Adsorption of perfluorinated n-alkanoic acids on native aluminum oxide surfaces”, Journal of Vacuum Science and Technology A 13  1345 (1995); http://dx.doi.org/10.1116/1.579562

3. (15) C.-C.Cho, R.M.Wallace and L.A.Files-Sesler, “Patterning and etching of amorphous teflon films”, Journal of Electronic Materials 23  827 (1994); http://dx.doi.org/10.1007/BF02651379

4. (14) C.C.Cheng, P.A.Taylor, R.M.Wallace, H.Gutleben, L.Clemen, M.L.Colaianni, P.J.Chen, W.H.Weinberg, W.J.Choyke and J.T.Yates, Jr., “Hydrocarbon surface chemistry on Si(100)”, Thin Solid Films 225  196 (1993); http://dx.doi.org/10.1016/0040-6090(93)90155-I

5. (13) D.Weirauch, R.L.Strong, R.M.Wallace and D.Chopra, “An evaluation of the sessile drop technique for the study of (Hg,Cd)Te surfaces”, Semiconductor Science and Technology 8  916 (1993); http://dx.doi.org/10.1088/0268-1242/8/6S/011

6. (12) L.Clemen, R.M.Wallace, P.A.Taylor, M.J.Dresser, W.J.Choyke, W.H.Weinberg and J.T.Yates, Jr., “Adsorption and thermal behavior of ethylene on Si(100)-(2x1)”, Surface Science 268  205 (1992) ; http://dx.doi.org/10.1016/0039-6028(92)90963-7

7. (11) P.A.Taylor, R.M.Wallace, C.C.Cheng, W.H.Weinberg, M.J.Dresser, W.J.Choyke and J.T.Yates, Jr., “Adsorption and decomposition of acetylene on Si(100)-(2x1)”, Journal of the American Chemical Society 114  6754 (1992); http://dx.doi.org/10.1021/ja00043a020

8. (10) P.J.Chen, M.L.Colaianni, R.M.Wallace and J.T.Yates, Jr., “Dissociative adsorption of PH3 on Si(111)-(7x7): a high resolution electron energy loss spectroscopy study”, Surface Science 244  177 (1991); http://dx.doi.org/10.1016/0039-6028(91)90491-A

9. (9) R.M.Wallace, P.A.Taylor, M.J.Dresser, W.J.Choyke and J.T.Yates, Jr., “Background effects in electron stimulated desorption ion angular distribution (ESDIAD) measurements on Si(111)-(7x7)”, Review of Scientific Instruments 62  720 (1991); http://dx.doi.org/10.1063/1.1142074

10. (8) R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7x7)”, Surface Science 239  1 (1990); http://dx.doi.org/10.1016/0039-6028(90)90613-D

11. (7) R.M.Wallace, C.C.Cheng, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “Ni impurity effects on hydrogen surface chemistry and etching of Si(111)”, Applied Surface Science 45  201 (1990); http://dx.doi.org/10.1016/0169-4332(90)90003-I

12. (6) P.A.Taylor, R.M.Wallace, W.J.Choyke and J.T.Yates, Jr., “Adsorption and decomposition of PH3 on Si(111)-(7x7)”, Surface Science 238  1 (1990); http://dx.doi.org/10.1016/0039-6028(90)90060-L

13. (5) R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “PH3 surface chemistry on Si(111)-(7x7): A study by Auger spectroscopy and electron stimulated desorption methods”, Journal of Applied Physics 68  3669 (1990); http://dx.doi.org/10.1063/1.347168

14. (4) C.C.Cheng, R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “Direct Determination of absolute monolayer coverages of chemisorbed C2H2 and C2H4 on Si(100)”, Journal of Applied Physics 67  3693 (1990); http://dx.doi.org/10.1063/1.345326

15. (3) M.J.Dresser, P.A.Taylor, R.M.Wallace, W.J.Choyke and J.T.Yates, Jr., “The adsorption and decomposition of NH3 on Si(100) – detection of the NH2(a) species”, Surface Science 218 75 (1989); http://dx.doi.org/10.1016/0039-6028(89)90621-3

16. (2) P.A.Taylor, R.M.Wallace, W.J.Choyke, M.J.Dresser and J.T.Yates, Jr., “The dissociative adsorption of ammonia on Si(100)”, Surface Science Letters 215  L286 (1989); http://dx.doi.org/10.1016/0039-6028(89)90693-6

17. (1) R.B.Irwin, R.M.Wallace, W.J.Choyke and R.A.Hoffman, “Sub-micron calibration for ion beam milling of thin films”, Nuclear Instruments and Methods in Physical Research B5 523 (1984); http://dx.doi.org/10.1016/0168-583X(84)90012-0

Publications (Selected Peer Reviewed Conference Proceedings) – R.M.Wallace

2019

1. (78)  C. D. Young, P. Bolshakov*, R. A. Rodriguez Davila, P. Zhao, C. Smyth, M. Quevedo-Lopez, and R. M. Wallace, "Relatively Low-Temperature Processing and Its Impact on Device Performance and Reliability," Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII, Kyoto, Japan, ECS Transactions, 90(1), pp. 89-97, (2019). http://dx.doi.org/10.1149/09001.0089ecst 

2018

1. (77) P. Bolshakov, A. Khosravi, P. Zhao, R.M. Wallace, C.D. Young, P.K. Hurley, "Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time," 2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018, Austin, Texas USA, pp 161-165. http://dx.doi.org/10.1109/ICMTS.2018.8383789

2. (76) C.D. Young, P. Bolshakov, R.A. Rodriguez-Davila, P. Zhao, A. Khosravi, I. Mejia, M. Quevedo-Lopez, C.L. Hinkle, R.M. Wallace, “Electrical characterization of process induced effects on non-silicon devices," 2018 International Conference on IC Design and Technology, ICICDT 2018; Otranto; Italy; pp. 173-176.          http://dx.doi.org/10.1109/ICICDT.2018.8399784

2017

1. (75) R.M.Wallace, “High-K Dielectrics: A Perspective on Applications from Silicon to 2D Materials, ECS Transactions, 80(1): 17-27, (2017). http:/dx.doi.org/Q10.1149/08001.0017ecst

2. (74) C. D Young, P. Bolshakov, P. Zhao, C. Smyth, A. Khosravi, P. K. Hurley, C. L Hinkle, and R. M Wallace, "Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics 2D and Beyond Materials and Devices," ECS Transactions 80(1): 219-225 (2017); http://dx.doi.org/10.1149/08001.0219ecst

3. (73) R. Addou and R. M.Wallace, "Integration of 2D Materials for Advanced Devices: Challenges and Opportunities, ECS Transactions, 79, (1) 11 (2017);   http://dx.doi.org/10.1149/07901.0011ecs

4. (72) Q. Wang, H. Zhu, C. Zhang, R.Addou, K.Cho, R.M.Wallace, M. J.Kim, “In Situ Heating Study of 2H-MoTe2 to Mo6Te6 Nanowire Phase Transition," Microscopy and Microanalysis, 23 (S1) 1764-65 (2017); http://dx.doi.org/10.1017/S1431927617009485

2016

1. (71) C. D. Young, P. Zhao, P. Bolshakov-Barrett, A. Azcatl, P. K. Hurley, Y. Y. Gomeniuk, M.Schmidt, C. L. Hinkle and R. M Wallace, “Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric,” ECS Transactions, 75(5) 153-162 (2016). http://dx.doi.org/10.1149/07505.0153ecst

2. (70) P. Zhao, A. Azcatl, P. Bolshakov-Barrett, R. M. Wallace, C. D. Young and P. K. Hurley, “Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study,” 2016 International Conference on Microelectronic Test Structures (ICMTS), Yokohama, pp. 172-175. http://dx.doi.org/10.1109/ICMTS.2016.7476201

2015

1. (69) R. Addou, M. Batzill and R. M. Wallace,“Excellent Wetting Behavior of Yttria on 2D Materials” ECS Transactions, 69(5) 325-336 (2015). http://dx.doi.org/10.1149/06905.0325ecst

2014

1. (68) R.M.Wallace, “In-Situ Studies on 2D Materials,” ECS Transactions, 64 (9) 109-116 (2014). http://dx.doi.org/10.1149/06409.0109ecst

2. (67) R.M.Wallace,“Correlating Interface Chemistry and Device Properties,” 72nd Device Research Conference, 189-190 (2014). https://doi.org/10.1109/DRC.2014.6872361

2013

1. (66) C. L. Hinkle, R. V. Galatage, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace and E. M. Vogel, “III-V/High-k Defects: DIGS vs. Border Traps” ECS Transactions, 53 (1) 161-167 (2013).  http://dx.doi.org/10.1149/05301.0161ecst

2. (65) W. Cabrera, H. Dong, B. Brennan, É. O’Connor, P. Carolan, R. Galatage, S. Monaghan, I. Povey, P.K. Hurley, C.L. Hinkle, Y. Chabal, R.M. Wallace, “Detection of diffused III-V materials in high-k oxides during atomic layer deposition and annealing,” Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 Vol. 2, 1  (2013); ISBN 9781482205794

3. (64) C. D. Young, R.J.W. Hill, K. Matthews, W.-E. Wang, C. Hinkle, R.M. Wallace, W.-Y. Loh,  C. Hobbs, P. D. Kirsch and R. Jammy., “Effect of ALD Oxidant and Channel Doping on Positive Bias Stress Characteristics of Surface Channel In0.53Ga0.47As nMOSFETs,” 2013 International Symposium on VLSI Technology, Systems, And Applications (VLSI-TSA); http://dx.doi.org/10.1109/VLSI-TSA.2013.6545602

4. (63) J.B. Ballard,  J.H.G. Owen, E. Fuchs, S. McDonnell, D. Dick, G. Mordi, A. Azcatl, O. Seitz, P. Campbell, J.F. Veyan, Y. Chabal, R.M. Wallace, M. Bischof, D. Jaeger, R. Reidy, N. Sarkar, J.N. Randall, “Atomically-Precise Three-Dimensional Top Down Fabrication ,” 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS, p.764-767 (2013)

5. (62) J. Ballard, S. McDonnell, D. Dick, J. Owen, G. Mordi, A. Azcatl, P. Campbell, Y. Chabal, J. Randall, R. Wallace,  “Patterned atomic layer deposition on scanning tunneling microscope constructed templates,” Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 Vol. 2, 481 (2013); ISBN 9781482205794

6. (61) B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace In-situ studies of III-V surfaces and high-k atomic layer deposition Solid State Phenomena 195, 90 (2013). http://dx.doi.org/10.4028/www.scientific.net/SSP.195.90

2012

1. (60) E.A. Stach, D. Su, P. Ercius, K. J. Ganesh,P.J. Ferreira, Y. Zhu, K. Yager, S. Murali, M.D. Stoller, W. Cai, A. Pirkle, R.M. Wallace, K.A. Cychosz, M. Thommes, and R.S. Ruoff “High-Resolution Characterization of Activated Graphene for Supercapacitor Applications,” Microscopy and Microanalysis 18 (Suppl 2), 1536 (2012). http://dx.doi.org/10.1017/S1431927612009531

2. (59) H.C. Floresca, D. Hinojos, N. Lu, J. Chan, L. Colombo, R.M. Wallace, J. Wang, J. Kim and M.J. Kim “Large area mapping of graphene grain structure and orientation,” ECS Transactions 45 (4), 79-82 (2012). http://dx.doi.org/10.1149/1.3700455

3. (58) J. Kim, H.-C. Kim, R. M. Wallace, and T.J. Park, “In Situ XPS Study on ALD (Atomic Layer Deposition) of High-k Dielectrics: La2O3 Using La-Formidinate and Ozone ,”  ECS Transactions 45 (3), 95 (2012); http://dx.doi.org/10.1149/1.3700876

2011

1. (57) D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, and B. M. Armstrong, “Surface characterization of nickel germanides for Schottky source/drain contacts to germanium p-MOSFETs,” ISDRS 2011, December 7-9, 2011, College Park, MD, USA. http://dx.doi.org/10.1109/ISDRS.2011.6135277 

2. (56) C. L. Hinkle, B. Brennan, S. McDonnell, M. Milojevic, A. M. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M. Vogel, and R. M. Wallace, “High-k Oxide Growth on III-V Surfaces: Chemical Bonding and MOSFET Performance,” ECS Transactions, 35 (3) 403-413 (2011); http://dx.doi.org/10.1149/1.3569933

2010

1. (55) B. E. Coss ; C. Smith ; W. -Y. Loh ; K. J. Chung ; P. Majhi ; R. M. Wallace ; J. Kim ; R. Jammy “Contact resistance reduction to FinFET source/drain using dielectric dipole mitigated Schottky barrier height tuning,” 2010 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 584-587 (2010).

2. (54) A. Ali, H. S. Madani, A. P. Kirk, R.M. Wallace, D. A. Zhao, D. A. Mourey, M. Hudaif, T. N. Jackson B. R. Bennett, J. B. Boos, and S. Datta,“ Fermi Level Unpinning of GaSb(l00) using Plasma Enhanced ALD Al2O3 Dielectric,” IEEE Device Research Conference Proceedings, 27 (2010) (Best Paper Award); http://dx.doi.org/10.1109/DRC.2010.5551954

3. (53) E. M. Vogel, A. M. Sonnet, R. V. Galatage, M. Milojevic, C. L. Hinkle, and R. M. Wallace, "Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs," Electrochemical Society Transactions 28(1), 209 (2010). http://dx.doi.org/10.1149/1.3375603

4. (52) E. O'Connor, B. Brennan, R. Contreras, M. Milojevic, K. Cherkaoui, S. Monaghan, S. B. Newcomb, M. E. Pemble, G. Hughes, R. M. Wallace, and P. K. Hurley, “(NH4)2S Passivation of High-k/In0.53Ga0.47As Interfaces: A Systematic Study of (NH4)2S Concentration” Electrochemical Society Transactions 28(1), 231 (2010) http://dx.doi.org/10.1149/1.3375606 

2009

1. (51) A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, R. A. Chapman, C. L. Hinkle, R. M. Wallace and E. M. Vogel, “Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field effect transistors (MOSFETs),” IEEE International Integrated Reliability Workshop Final Report, Art. No. 5383036, 46-49, (2009); http://dx.doi.org/10.1109/IRWS.2009.5383036

2. (50) A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, P. Kirsch, J. Huang, R. A. Chapman, C. L. Hinkle, R. M. Wallace and E. M. Vogel “Impact of surface preparations on the transport characteristics of InxGa1-xAs metal-oxide-semiconductor field effect transistors (MOSFETs),” ISDRS 2009, December 9-11, 2009, College Park, MD, USA (2009) International Semiconductor Device Research Symposium, ISDRS '09 , art. no. 5378296; http://dx.doi.org/10.1109/ISDRS.2009.5378296

3. (49) A.Venugopal, A. Pirkle, R.M. Wallace, L. Colombo, E.M. Vogel, “Contact resistance studies of metal on HOPG and graphene stacks,”AIP Conference Proceedings 1173, 324 (2009); http://dx.doi.org/10.1063/1.3251243

4. (48) P.K. Hurley, E.O'Connor, S. Monaghan, R. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, J. MacHale, A. Quinn, G. Brammertz, M. M. Heyns, S. Newcomb, V.V. Afanas'ev, A. Sonnet, R. Galatage, N. Jivani, E. Vogel, R. M. Wallace, and M. Pemble, “Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) Electrochemical Society Transactions 25(6), 113 (2009) http://dx.doi.org/10.1149/1.3206612

5. (47) M.Milojevic, A. M. Sonnet, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “In-situ Studies of Atomic Layer Deposition Studies on High-Mobility Channel Materials,” Electrochemical Society Transactions 25 (4), 115 (2009); http://dx.doi.org/10.1149/1.3205048

6. (46) M. Xu, K. Xu,  R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y.Q. Wu, R.M. Wallace, and P. D. Ye, “New Insight into Fermi-Level Unpinning on GaAs: Impact of Different Surface Orientations,” IEEE Intl. Electron Device Meeting Technical Digest 09-865 (2009); http://dx.doi.org/10.1109/IEDM.2009.5424269

7. (45) B.E. Coss, W.-Y. Loh, J. Oh, G. Smith, C. Smith, H. Adhikari, B. Sassman, S. Parthasarathy, J. Barnett, P. Majhi, R. M. Wallace, J. Kim, R. Jammy, “CMOS Band-Edge Schottky Barrier Heights Using Dielectric-Dipole Mitigated (DDM) Metal/Si for Source/Drain Contact Resistance Reduction,” Symposium on VLSI Technology, Kyoto, Japan, 104 (2009)  LINK

8. (44) A. Pirkle, Y. J. Chabal, L. Colombo, and R. M. Wallace, “In-situ Studies of High-κ Dielectrics for Graphene-Based Devices,” Electrochemical Society Transactions 19(5), 215 (2009) http://dx.doi.org/10.1149/1.3119545 

9. (43) C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace, “Surface studies of III-V materials: oxidation control and device implications,” Electrochemical Society Transactions 19(5), 387 (2009) http://dx.doi.org/10.1149/1.3119561

10. (42) G. Lee, C. Gong, A. Pirkle, A. Venugopal, B. Lee, S.Y. Park, L. Goux, M. Acik, R. Guzman, Y. Chabal, J. Kim, E.M. Vogel, R. M. Wallace, M.J. Kim, L. Colombo, and K.J. Cho, “Materials Science of Graphene for Novel Device Applications,” Electrochemical Society Transactions 19(5), 185 (2009) http://dx.doi.org/10.1149/1.3119542

11. (41) B. Lee, G. Mordi, TJ. Park, Y. J. Chabal, K. J. Cho, E. M. Vogel, M. J. Kim, L. Colombo, R. M. Wallace, and J. Kim “Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices,” Electrochemical Society Transactions 19(5), 225 (2009) http://dx.doi.org/10.1149/1.3119546

2008

1. (40) R. Contreras-Guerrero, R. M. Wallace, A. Herrera-Gomez, S. Aguirre-Francisco, M. Lopez-Lopez, “XPS and AFM Study of GaAs Surface Treatment,” CINVESTAV, MEXICO Date: JUL 07-11, (2008), in ADVANCED SUMMER SCHOOL IN PHYSICS 2008: FRONTIERS IN CONTEMPORARY PHYSICS, 4TH EDITION , AIP Conference Proceedings   1077 , 229-233  (2008); http://dx.doi.org/10.1063/1.3040257

2. (39) P. Patel, D. A Buchanan, R. M. Wallace, “Work Function Tuning of MoxSiyNz metal gate electrode for Advanced CMOS Technology,” in Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology, edited by L. Pantisano, E. Gusev, M. Green, M. Niwa (Mater. Res. Soc. Symp. Proc. Volume 1073E, Warrendale, PA, 2008 - 1073-H01-07

3. (38) T. Lee, H. Floresca, S.J. Kang, J.J. Sim, K.H. Song, H.-B. Kang, B.-Y. Lee, R. M. Wallace, B. E. Gnade, and M.J. Kim, “Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding “ Electrochemical Society Transactions 16, (8) 525 (2008) http://dx.doi.org/10.1149/1.2982907

4. (37) R.M.Wallace “In-Situ Studies of Interfacial Bonding of High-k Dielectrics for CMOS Beyond 22nm” Electrochemical Society Transactions 16, (5) 255 (2008) http://dx.doi.org/10.1149/1.2981608

2007

1. (36) T.H. Lee, DK Cha, JG Wang, J Jeon, J Kim, RM Wallace, BE Gnade and MJ Kim. "HRTEM Study on the Interface of Si-based Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding Technology," Microscopy and Microanalysis 12, S02, p. 804-5 (2007); http://dx.doi.org/10.1017/S1431927607078592

2. (35) C. Driemeier, R. Wallace, and I. Baumvol “Oxygen Species in HfO2 Films: An in Situ X-Ray Photoelectron Spectroscopy Study” Electrochemical Society Transactions 11, (4) 91 (2007) http://dx.doi.org/10.1149/1.2779551

3. (34) A.Chowdhury, J. Kim and R.M.Wallace “Alumina as a Hydrogen Barrier for FeRAM Devices,” Proceedings of the IEEE 8th Annual Non-Volatile Memory Technology Symposium, Albuquerque, New Mexico, November 10-13, 2007, pp.48-51 (2007)

4. (33) P. Sivasubramani, T.S. Böscke, J. Huang, C.D. Young, P.D. Kirsch, S.A. Krishnan, M.A. Quevedo-Lopez, S. Govindarajan, B.S. Ju, H.R. Harris, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, J. Kim, B.E. Gnade, R.M. Wallace, G. Bersuker, B.H. Lee and R. Jammy; “Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics,” Symposium on VLSI Technology, Kyoto, Japan, (2007); http://dx.doi.org/10.1109/VLSIT.2007.4339730

5. (32) S. Govindarajan, T. S. Boscke, P. D. Kirsch, M. A. Quevedo-Lopez, P. Sivasubramani, S. C. Song, R. M. Wallace, B. E. Gnade, P.Y. Hung, Jimmy Price, U. Schroder, S. Ramanathan, B. H. Lee and R. Jammy “Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications,” IEEE VLSI-TSA International Symposium on VLSI Technology, System, and Applications, T.28, Hsinchu, Taiwan, April 23-25, 2007; http://dx.doi.org/10.1109/VTSA.2007.378912

2006

1. (31) P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B .H. Lee, J.G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” IEEE Intl. Electron Dev. Meeting Technical Dig. (2006); http://dx.doi.org/10.1109/IEDM.2006.346862

2. (30) P.D.Kirsch, M.A. Quevedo, G. Pant, S. Krishnan, S.C. Song, H.J. Li, J.J. Peterson, B.H. Lee, R.M. Wallace, M. Kim, B.E. Gnade, “Relationship of HfO2 Material Properties and Transistor Performance,” IEEE VLSI-TSA International Symposium on VLSI Technology, System, and Applications, (2006);

3. (29) P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee and R. Jammy, “Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET”, Ext. Abs. of SSDM, p.388, (2006); http://doi.org/10.7567/SSDM.2006.J-5-1

4. (28) P. McIntyre, D. Chi, C. O. Chui, H. Kim, Kang-Ill Seo, Krishna Saraswat, Raghavasimhan Sreenivasan, Takuya Sugawara, F. S. Aguirre-Testado, and R. M. Wallace, “Interface Layers for High-k/Ge Gate Stacks: Are They Necessary?,” ECS Transactions 3(7), 519-530 (2006). http://dx.doi.org/10.1149/1.2355849

5. (27) G.Pant, M.J.Kim,B.E.Gnade, R.M. Wallace, M.Queveo-Lopez, S. Krishnan, P.D.Kirsch, B. H. Lee and R. Jammy, “Thickness, Morphology and Mobility: A Study of Hf-based Dielectric Performance” ISAGST (2006)

6. (26) C.M. Osburn, S.A. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A.I. Kingon, J. Lee, D.J. Lichtenwalner, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, R.J. Nemanich, G.N. Parsons, D.G. Schlom, S. Stemmer, R.M. Wallace, and J. Whitten, "Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center,", ECS Transactions, 3(3), 389 (2006). (Invited) http://dx.doi.org/10.1149/1.2355729

7. (25) M.J. Kim, T.H. Lee, J. Kim, R.M. Wallace and B.E. Gnade, "Si-based Resonant Tunneling Devices using UHV Wafer Bonding, ECS Transactions 3(6), 75 (2006). http://dx.doi.org/10.1149/1.2357056

8. (24) D.K. Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace, B.E. Gnade, M.J. Kim, “Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM,” Microscopy and Microanalysis 12(Supp 2), pp.1272-3 (2006); http://dx.doi.org/10.1017/S1431927606068887

9. (23) M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H. N. Alshareef, J. Barnett, H. R. Harris, A.Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace, and B.H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling ,” 36th European Solid-State Device Research Conference, Montreaux, Switzerland (2006); http://dx.doi.org/10.1109/ESSDER.2006.307651

10. (22) P. Sivasubramiani, M. A. Quevedo-Lopez , T.H. Lee, M.J. Kim, B.E. Gnade, and R. M. Wallace, “Interdiffusion Studies of High-k Gate Dielectric Stack Constituents,” in Defects in Advanced High-κ Dielectric Nano-Electronic Semiconductor Devices, E. Gusev, ed., Springer, Netherlands, pp. 135-146, (2006); ISBN 978-1-4020-4367-3

2005

1. (21) M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. H. Sim, C. Huffman, J. J. Peterson, B .H. Lee, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, D. Guo, H. Bu, and T.P. Ma, “High Performance Gate First HfSiON Dielectric Satisfying 45nm Node Requirements,” 2005 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 437, (2005); http://dx.doi.org/10.1109/IEDM.2005.1609369

2. (20) P. Zhao, J. kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,” Extended Abstracts of the International Conference on Solid State Devices and Materials, Kobe, Japan, A-8-1, pp 848-849 (2005).

3. (19) R.P.Pezzi, R.M.Wallace, M.Copel and I.J.R.Baumvol, “High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 571; http://dx.doi.org/10.1063/1.2063020

4. (18) M.J.Kim, R.M.Wallace and B.E.Gnade, “HRTEM for Nano-Electronic Materials Research,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 558; http://dx.doi.org/10.1063/1.2063018

5. (17) P. Sivasubramani, P.Zhao, M.J.Kim, B.E.Gnade, R.M.Wallace, L.F.Edge, D.G.Schlom, G.N.Parsons, and V.Misra, “Thermal Stability Studies of Advanced Gate Stack Streuctires on Si(100),” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 156; http://dx.doi.org/10.1063/1.2062955

6. (16) P.Zhao, J.Kim, M.J.Kim, B.E.Gnade and R.M.Wallace, “Thermally Stable MoxSiyNz as a Metal gate Electrode for Advanced CMOS Devices,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 152; http://dx.doi.org/10.1063/1.2062954

2004

1. (15) M.J. Kim, ,M.In Het Panhuis, R.Gupta, A.S. Blum, B.R. Ratna, B.E Gnade, and R.M. Wallace, Nano-patterning and manipulation of genetically engineered virus nanoblocks,” Microscopy and Microanalysis, 10, SUPPL. 2 26-27 (2004); http://dx.doi.org/10.1017/S1431927604885441

2. (14) I.S. Jeon, J. Lee, P. Zhao, P. Sivasurbramani, T. Oh, H.J. Kim, D.K. Cha, J. Huang, M.J. Kim, B.E. Gnade, J. Kim and R.M. Wallace, “A novel methodology of tuning work function of metal gate using stacking bi-metallic layers,” 2004 IEEE International Electron Devices Meeting (IEDM) Technical Digest, San Francisco, CA: Dec. 13-15, 303-306 (2004); http://dx.doi.org/10.1109/IEDM.2004.1419139

2003

1. (13) M. Kim, J. Huang, D.K. Cha, M. Quevedo-Lopez, R. Wallace and B. Gnade, "Thermal Stability of Hf-based High-k Dielectric Films on Si(100)," Microscopy and Microanalysis, 9, SUPPL. 2, 506-7 (2003).

2. (12) M. Quevedo-Lopez, B.E.Gnade and R.M.Wallace, “Challenges for the Integration of High-k dielectrics,” Physics and Technology of High-k gate Dielectrics-I, S.Kar, D.Misra, R.Singh and F. Gonzalez, Editors, Proc. Vol. 2002-28, pp. 3-12 The Electrochemical Society, Pennington, NJ (2003). ISBN 1-56677-395-4

2002

1. (11) M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, L. Colombo, M. Bevan, M. Douglas, M. Visokay and R. M. Wallace, “Interfacial Diffusion Studies of Hf and Zr into Si from Thermally Annealed Hf and Zr Silicates,” Materials Research Society Symposium Proceedings 686 (2002) 223 (A9.5.1); http://dx.doi.org/10.1557/PROC-686-A9.5

2. (10) B.E. Gnade, G. Pant, P. Punchaipetch, R. M. Wallace, “Low Temperature Deposition of Hafnium Silicate Gate Dielectrics for TFTs on Plastic Substrates,” 15th Annual .Meeting of the IEEE Lasers & Electro-Optics Society Conference Proceedings, Vol. 1, (2002) 305-306; http://dx.doi.org/10.1109/LEOS.2002.1134049

< 2001

1. (9) G.D.Wilk and R.M.Wallace, “Silicate Gate Dielectrics for scaled CMOS,” The Physics and Chemistry of SiO2 and Si-SiO2 interface – 4, H.Z.Massoud, I.J.R.Baumvol, M.Hirose and E.H.Poindexter, Editors, Proc. Vol. 2000-2, 464, The Electrochemical Society, Pennington, NJ (2000). ISBN 1-56677-267-2

2. (8) P.E. Nicollian, M. Rodder, D.T.Grider, P. Chen, R.M.Wallace and S.V.Hattangady, “Low voltage stress-induced-leakage-current in ultrathin gate oxides,” IEEE International Reliability Physics Symposium Proceedings (1999) 400.

3. (7) P.J.Chen and R.M.Wallace, “Hydrogen/Deuterium interaction with CMOS transistor device structure: sintering process studied by SIMS,” in Hydrogen in Metals and Semiconductors, Materials Research Society Symposium Proceedings 513 (1998) 325; http://dx.doi.org/10.1557/PROC-513-325

4. (6) B.R. Chalamala, R.M.Wallace and B.E.Gnade, “Residual gas effects on the emission characteristics of active Mo field-emission cathode arrays,” 1998 SID International Symposium. Digest of Technical Papers. Vol. 29, 17-22 May 1998, Anaheim, CA, USA, 107-10;

5. http://dx.doi.org/10.1889/1.1833673

6. (5) V.A. Ukraintsev, F.R.Potts, R.M.Wallace, L.K.Magel, H.Edwards, M.-C.Chang, “Silicon surface preparation for two-dimensional dopant characterization,” AIP Conference Proceedings, no.449, 1998, Characterization and Metrology for ULSI Technology. 1998 International Conference, 23-27 March 1998, Gaithersburg, MD, USA, 736-4; http://dx.doi.org/10.1063/1.56918

7. (4) A Seabaugh, R.Lake, B. Brar, R.Wallace and G.Wilk, “Beyond the Roadmap technology: Silicon heterojunctions, optoelectronics and quantum devices,” Materials Research Society Symposium Proceedings 486 (1997) 67; http://dx.doi.org/10.1557/PROC-486-67

8. (3) H.L.Denton and R.M.Wallace, “Controlling polymer formation during polysilicon etching in a magnetically-enhanced reactive ion etcher,” Proceedings of the SPIE, 1803 (1993) 36; http://dx.doi.org/10.1117/12.142931

9. (2) WJ Choyke, R Wallace, L Henderson, P Taylor, MJ Dresser, “SiC Production Chemistry from Olefinic Hydrocarbons on Si(100),” in  Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 -11, 1987 (1989). ISBN 978-3-642-93408-7

10. (1) J.A.Spitznagel, B.O.Hall, N.J.Doyle, R.Jayaram, R.M.Wallace, J.R.Townsend and M.Miller, “Effects of nitrogen and helium ion implantation on uniaxial tensile properties of 316 SS foils,” Materials Research Society Symposium Proceedings 27 (1984) 597; http://dx.doi.org/10.1557/PROC-27-597

Publications (Conference Proceedings) – R.M.Wallace

1. R.M.Wallace, “Critical Materials Issues for High-k Gate Dielectric Integration,” Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Nagoya, Japan (2002), pp28-9.

2. A Seabaugh, R.Lake, B. Brar, R.M.Wallace and G.Wilk, “Silicon-based Quantum MOS Technology”, Government Microcircuit Applications Conference Proceedings (1998).

Publications (Magazine Articles) – R.M.Wallace

1. R.M.Wallace, P.C.MacIntyre, J. Kim, and Y. Nishi, “Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors,” MRS Bulletin 34(7) 493 (2009).

2. M.A. Quevedo-Lopez, S. Krishnan, P.D. Kirsch, H. N. Alshareef, B. E. Gnade, M. J. Kim, R.M. Wallace, B.H. Lee and R. Jammy, “Structure-Property Relationships in Ultrathin Hf-Based Gate Dielectrics,” Future Fab Intl. 21, 114-6 (2006).

3. E.Garfunkel, T.Gustafsson, P.Lysaght, S.Stemmer, and R. Wallace,“Atomic Scale Materials Characterization Challenges in Advanced CMOS Gate Stacks,”  Future Fab Intl. 21, 126–9 (2006).

4. M. Tao, R. M. Wallace, C. R. Cleavelin, R. L. Wise, “Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistor,” The Electrochemical Society Interface, 14(2), pp26-27, (2005).

5. R.M.Wallace and G.D.Wilk, “High-k Gate Dielectric Materials”, MRS Bulletin (Special Issue), March (2002), pp.192-7. (Also was issue co-editor)

6. R.M.Wallace and G.D.Wilk, “Identifying the Most Promising High-k Gate Dielectrics”, Semiconductor International 24(7) July (2001), pp. 227-236.

7. R.M.Wallace and G.D.Wilk, “Exploring the Limits of Gate Dielectric Scaling”, Semiconductor International 24(6) June (2001), pp. 543-550.

8. R.M.Wallace and S.Tang, Designing materials by first-principles computational methods”, Texas-Instruments-Technical-Journal 12, no.5; Sept.-Oct. (1995) 66.

9. M.Burkhart, B.Story, R.M.Wallace and B.Patrick , “The effects of prolonged exposure to aqueous ammonium hydroxide on polyvinylidene fluoride pipe”, Microcontamination , October (1992) 27.

Book Chapters – R.M.Wallace

1. L. A. Walsh, R. Addou, R. M. Wallace, and C. L. Hinkle, “Molecular beam epitaxy of transition metal dichalcogenides”, in Molecular Beam Epitaxy: From Research to Mass Production, 2nd Edition, M. Henini, Editor, Elsevier, Oxford (2017); https://doi.org/10.1016/B978-0-12-812136-8.00024-4

2. L. Colombo, A. Diebold, C. Casiraghi, M. Kim, R. M. Wallace, and A. Venugopala, “Characterization and Metrology for Graphene Materials, Structures, and Devices,” in Characterization and Metrology for Nanoelectronics and Nanostructures, Z. Ma and D. G. Seiler, Editors (2016) Pan Stanford Publishing. http://dx.doi.org/10.4032/9789814745093  ;  ISBN: 9789814745086;    http://www.panstanford.com/books/9789814745086.html

3. R.M.Wallace and P.C.McIntyre, in “Atomic Layer Deposition of High-k Dielectrics on III-V Materials,” Reference Module in Materials Science and Materials Engineering, Elsevier (2016). http://dx.doi.org/10.1016/B978-0-12-803581-8.03790-5

4. S. McDonnell, R. Addou, C. Hinkle and R.M.Wallace, "Physico-chemical characterization of MoS2/metal and MoS2/oxide interfaces," in 2D Materials for Nanoelectronics, editors M. Houssa, A. Dimoulas, A. Molle, , ISBN 9781498704175 (2016), CRC Press.

5. W. Wang, K. Xiong, R.M.Wallace and K. Cho, “Theoretical Progress on GaAs(001) Surface and GaAs/high-k Interface,” , in High-k Gate Dielectricsfor CMOS Technology, First Edition. Edited by Gang He and Zhaoqi Sun, (2012) Wiley-VCH Verlag GmbH & Co. ISBN: 978-3-527-33032-4.

   1. http://dx.doi.org/10.1002/9783527646340.ch13

6. R.M.Wallace and P.C.McIntyre, in “Atomic Layer Deposition of High-k Dielectrics on III-V Materials,” Reference Module in Materials Science and Materials Engineering, Elsevier (2011). http://dx.doi.org/10.1016/B978-0-08-043152-9.02261-2

7. M.Milojevic, C.L.Hinkle, E.M. Vogel and R.M.Wallace, “Interfacial Chemistry of oxides on III-V Compound Semiconductors,”  in Fundamentals of Compound Semiconductor MOSFETs, P. Ye and S. Oktyabrsky Editors, (2010) Springer.  ISBN 978-1-4419-1547-4

8. R.M.Wallace and G.D.Wilk, “Materials Issues for High-k Gate Dielectric Selection and Integration”, in High-K Gate Dielectric Materials for VLSI MOSFET Applications, H.R.Huff and D.C.Gilmer, Editors, (2005), Springer-Verlag; ISBN 978-3-540-26462-0  

9. R.M.Wallace,“Dielectric Materials For Microelectronics,”  Handbook of Electronic and Optoelectronic Materials, S. Kasap and P. Capper, Editors, (2005), Springer; ISBN 978-0-387-26059-4

10. R.M.Wallace and O.A.Auciello, “Science and Technology of High-Dielectric Constant (K) Thin Films for Next Generation CMOS,” in Thin Films and Heterostructures for Oxide Electronics, S. B. Ogale, Editor (2005) Springer; ISBN 978-0-387-26089-1

Edited Books – R.M.Wallace

1. “Integration of Advanced Micro- and Nanoelectronic Devices – Critical Issues and Solutions,” J.Morais, D.Kumar, M. Houssa, R.K.Singh, D.Landheer, R. Ramesh, R.M.Wallace, and S.Guha Materials Research Society Symposium Proceedings, Vol 811, MRS, Warrendale, PA (2004).