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Dr. Rafik Addou
B.S. Physical Science, University Mohamed Premier (2004)
M.S. Physics of Materials and Nanosciences (2006)
Ph.D. Materials Science and Engineering (2010)
Rafik Addou started in the Wallace group as a Research Scientist in 2013 and specializes in interface and surface science of 2D materials. Areas of interest: defects metrology, understanding the device behavior, surface investigation of novel materials. Rafik is now at Oregon State University.
Further information:
- https://scholar.google.com/citations?user=pDq356kAAAAJ&hl=en&oi=ao
- https://www.researchgate.net/profile/Rafik_Addou
Dr. Stephen J. McDonnell
Ph.D. Physical Sciences; Dublin City University, 2009
B.S. Applied Physics 1st class honors; Dublin City University, 2004
Assistant Professor
Department of Materials Science & Engineering
University of Virginia
https://pages.shanti.virginia.edu/Website_5/
Christopher M. Smyth
B.S. Materials Science, Georgia Institute of Technology 2014
Ph.D. Materials Science and Engineering, University of Texas at Dallas, Present
Christopher Smyth started in the Wallace Group in January of 2015 and specializes in in-situ and ex-situ study of the interface between metal and semiconductor, specifically Transition Metal Dicalcogenides, using a variety of characterization techniques including but not limited to X-Ray Photoelectron Spectroscopy and Atomic Force Microscopy, as well as various electrical measurement techniques. His interests lie in the areas of semiconductor research, semiconductor devices beyond Moore’s Law, characterization, electron microscopy, interface chemistry, and 2D materials. He earned is PhD in 2018 is now at Sandia National Labs.
Further information:
Ava Khosravi
B.S. Physics and Applied Physics, University of Tehran (2014)
M.S. Physics, University of Texas at Arlington (2016)
Ph.D. Materials Science & Engineering, University of Texas at Dallas, Present
Ava Khosravi joined the Wallace group in August 2016 as a Graduate Research Assistant. Her current research is focused on in-situ surface and interface characterization of semiconductor materials such as Transition Metal Dichalcogenides and III-V semiconductors by X-ray Photoelectron Spectroscopy, Low Energy Ion Scattering, etc. She is also experienced in thin film growth and high-κ dielectric deposition by Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition. Ava completed her PhD in 2020.
Further information:
Dr. Angelica Azcatl
B.S. Nanotechnology, University of the Americas Puebla, Mexico - 2011
PhD student in Materials Science and Engineering, The University of Texas at Dallas - Present
Angelica Azcatl joined the Wallace group in January 2012 as a graduate research assistant. Her current research is focused on in-situ X-ray Photoelectron Spectroscopy surface characterization of two-dimensional semiconductor materials, such as transition metal dichalcogenides, and their interface with high-k dielectrics. She is also experienced in thin film growth by atomic layer deposition, chemical vapor deposition, thermal evaporation and e-beam deposition. Her areas of interest are the semiconductor materials science and nanotechnology for electronic device applications.
After working at Intermolecular, Inc. in California.
Further information:
Dr. Xiaoye Qin
B.S in Electronic Engineering, Huazhong University of Technology and Science, China - 2008
M.S. in Microelectronic Engineering, Huazhong University of Technology and Science, China - 2011
Ph.D. in Materials Science and Engineering, University of Texas at Dallas, USA -2014
Xiaoye Qin started in the Wallace Group in 2011 as a graduate research assistant and a posdoctoral research associate in the Wallace lab. His research interests include surface and interfaces of III-V semiconductors, semiconductor devices and high k dielectrics.
He is now employed at Intel.
For further information, see:
Dr. Hui Zhu
B.S. in Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, China - 2008
M.S. in Microelectronics & Solid State Electronics, Huazhong University of Science & Technology, Wuhan, China - 2011
Ph.D. in Materials Science and Engineering, University of Texas at Dallas, USA -2017
Hui Zhu started in the Wallace Group in 2014 as a graduate research assistant and specialized in surface and interface characterization of 2D materials (i.e. Graphene, MoS2, WTe2) by using XPS, STM, AFM, etc.
She is now employed at Intel.
Further information: see:
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