I have been an active user of the National Nanofabrication Centre (NNFC) housed in the Centre for Nano Science and Engineering (CeNSE) for the past two years.  The NNFC comprises of class 100 and class 1000 cleanrooms with state-of-the-art fabrication and in-line characterization tools. Almost all complex devices (excluding ion implantation) can be fabricated in this facility. Few of the tools that I have been using regularly for fabricating beta-Gallium Oxide devices are - 

Lithography - Heidelberg  maskless aligner, Raith e-line electron beam lithography, Suss MicroTec Mask aligner (contact lithography)
Dry Etching - Reactive Ion Etching,  plasma asher
Physical Deposition - E-beam evaporator, DC magnetron sputtering, RF magnetron sputtering, Atomic Layer Deposition
Chemical Vapor Deposition (CVD) - Plasma-Enhanced CVD (PECVD), Inductively-coupled Plasma CVD (ICP-CVD)
Inline Characterisation - Ellipsometer, Dektak XT surface profiler

Development of the beta-Gallium Oxide technology using a co-design approach requires the development of experimental or computational models to relate the observed device behavior with the device design parameters. Using the developed models, the device design can be sufficiently tweaked to obtain devices with higher performance and reliability. Computational models validated with experimental results are generally preferred over experimental models due to the involved savings of time and resources. I am using Sentaurus TCAD  for performing device computations.