Compared to the other WBG semiconductors, beta-Ga2O3 has superior material properties of large bandgap, high breakdown field, and reasonable electron mobilities. Therefore, devices based on beta-Ga2O3 can handle high operating voltages and large forward currents, and work at high frequencies and in harsh environments like high-temperature, harmful radiations, and chemically corrosive surroundings. Added to these inherent advantages is the availability of high-quality material (bulk crystals and epitaxial films) whose growth has been demonstrated by various low-cost melt growth (like Si) and standard epitaxial growth techniques. Given these superior properties,   beta-Ga2O3 has become the topic of intense ongoing research. 

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