Spintronics with 2D-materials

Transition metal dichalcogenides (TMDs) are 2D layered materials which possess sizable band gaps, promising interesting field-effects and spin properties. Field-effect transistors based on these 2D materials have shown high on/off ratio at room temperature. Also, it has been predicted that some of these 2D materials (e.g., MoS2) possess strong intrinsic spin-orbit coupling, which could lead to enhanced spin lifetime and long spin diffusion length. We are working on the injection (static and dynamic) and detection of spin-polarized carriers through the interface between ferromagnetic metal and 2D materials in collaboration with Prof. Samaresh Das at CARE, IIT Delhi and others. 

Related Publications:

1.  Extrinsic spin-orbit coupling induced enhanced spin pumping in few-layer MoS2/Py , R. Bansal, A. Kumar, N. Chowdhury, N. Sisodia, A. Barvat, A. Dogra, P. Pal, and P.K. Muduli,  J. Mag. Mag. Mater. 476, 337 (2019). 

2. Direct observation of unusual interfacial Dzyaloshinskii-Moriya interaction in graphene/NiFe/Ta heterostructures, Avinash Kumar Chaurasiya, Akash Kumar, Rahul Gupta, Sujeet Chaudhary, Pranaba Kishor Muduli, and Anjan Barman, Phys. Rev. B 99, 035402 (2019).