Switching setup is used to switch the magnetization of a thin film and this can be characterized by measuring the transverse resistance. Hall bar geometry is made on the thin film using optical lithography and magnetron sputtering is used to make contact on the film. Read current is applied across one of the bar and voltage is measured along the other bar and the ratio of these two is known as anomalous hall resistance which is proportional to the net out-of-plane magnetization.There are two currents that flow in the device one write current and one read current, write current is for changing the magnetization of the film and read current is used to detect the anomalous hall resistance. But the write current is a couple of orders higher in magnitude compared to the read current since the write current is supposed to affect the magnetization configuration and the read current is not.