Spintronic Materials & Devices

# Spin Orbit Torque # LLG Equation # Domain Wall Motion

# Spin Neuromorphic device # Anomalous Hall Effect and Magnetic Optic Ker Effect

Spin orbit torque is the next generation MRAM device that follows the spin transfer torque and is the torque generated by the Spin Hall Effect and the Rashiba Effect. Spin orbit torque has much lower current density than spin transfer torque and has no break down effect.

We are research for Sot, Domain Wall motion and magnetic materials.

Spin Orbit Torque

Spin orbit torque is the next generation MRAM device that follows the spin transfer torque and is the torque generated by the Spin Hall Effect and the Rashba Effect. Spin orbit torque has much lower current density than spin transfer torque and has no break down effect.

LLG Equation

In order to understand the spin orbit torque, the Landau-Lifshitz-Gilbert (LLG) equation must be understood to understand the effect of torque. LLG Equation is the dynamics of spin magnetization and consists of torque and damping term by magnetic field. Our lab is studying the physical properties of these LLG equations.

Domain Wall Motion

In magnetism, a domain wall is an interface separating magnetic domains. It is a transition between different magnetic moments and usually undergoes an angular displacement of 90° or 180°. A domain wall is a gradual reorientation of individual moments across a finite distance. The domain wall thickness depends on the anisotropy of the material, but on average spans across around 100–150 atoms.

Spin Neuromorphic Device

We study the domain wall motion by spin orbit torque and develop the spin Neuromorphic device which is one of the field of artificial intelligence device in the laboratory using domain wall motion. Neuromorphic device is the field to develop artificial hardware like neuron and synapse like human neural network.

Anomalous Hall Effect and Magneto Optic Kerr Effect

In order to understand the phenomenon of spin, the laboratory is equipped with the equipment to measure the Anomalous Hall effect and Magneto-optic Kerr effect at the same time. In addition, we are building sputtering equipment for stacking magnetic layer thin films, photo-lithography equipment for patterning, and ion-plasma milling equipment.

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