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Oxide Semiconductor
# Performance of n-type oxide TFT # P-type Transistor
Thin film transistors based on metal oxide materials have been widely studied as one of the promising materials in the field of integrated circuit and display research because of their excellent electrical and optical properties.
We are research for n-type transistor and p-type transistor.
Performance of n-type oxide TFT
Recently, thin film transistors based on metal oxide materials have been widely studied as one of the promising materials in the field of integrated circuit and display research because of their excellent electrical and optical properties.
• Approach: control of thickness & oxygen contents
• Manipulation of trap sites occurring at channel/gate oxide interfaces : reduction of Si-0-M bonding
• Ultrathin interface formation of IGZO/TaOx interface induced by ionic inter-diffusion: strong Ta-O bonding
=> low concentration of interfacial charge traps
P-type Transistor
Although p-type transistors with high reliability are essential as the core architecture of the complementary metal oxide semiconductor (CMOS) circuits, robust p-type oxide semiconductor materials have not been reported so far. In this sense, research on the p-type oxide materials has been recognized to be important.
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