Nanoelectronics Device Research Lab

NSF CAREER Award

I’m honored and grateful to receive the NSF CAREER Award titled “CAREER: Monolithic 3D Oxide Semiconductor Nanoelectronics for Energy-Efficient Computing”. The recognition is deeply meaningful, not as an individual achievement, but as a reflection of the many mentors, collaborators, students, and colleagues who have shaped this journey. I’ve been fortunate to learn from and work alongside people who constantly push the boundaries of science and engineering. I’m especially thankful to my wonderful students and collaborators, this work is truly a team effort.

Read the full story to learn more about the research, impact and vision behind this: https://lnkd.in/gFPvvKxU 

IRPS 2026 Accepted!!!

What if reliability design margins weren’t dictated by over-conservative statistics? Conventional stress-testing requires extensive data across large device populations, often resulting in large guard bands and suboptimal system-level performance. Our paper "Accelerated Reliability Characterization of Ferroelectric Capacitors using Physics-Informed Bayesian Active Learning" combines reliability physics with Bayesian active learning in a closed-loop characterization framework that adaptively selects stress conditions to maximize information gain while minimizing experimental cost—enabling accurate 3σ tail estimation with far less experiments and orders-of-magnitude improvements in bit error rate prediction for emerging memories.