Assistant Professor
Texas Instruments' Early Career Awardee
Department of Electrical & Computer Engineering
University of Texas at Dallas
800 W. Campbell Road
Richardson, TX-75080
Email: sourav.dutta@utdallas.edu
Sourav Dutta joined the Department of Electrical and Computer Engineering at The University of Texas at Dallas as an Assistant Professor in Fall 2023. He is the recipient of the Texas Instruments Early Career Award in recognition for his outstanding research achievements. He received his B.E. degree in Electrical Engineering from Jadavpur University, Kolkata, India in 2012 and his Ph.D. degree in Electrical and Computer Engineering from Georgia Institute of Technology, Atlanta, USA in 2018. For his outstanding Ph.D. research on Beyond-CMOS logic and interconnect using electron spin (Spintronics) and plasma oscillations (Plasmonics), he was awarded the 2018 Sigma Xi Best Doctoral Dissertation Award from Georgia Tech. From 2018 till 2021, he was a post-doctoral research scholar and subsequently an Assistant Research Professor at University of Notre Dame, Indiana, USA, where he made key advancements in the field of in-memory computing and computing with continuous-time dynamical systems using ferroelectric memory, oxide semiconductor transistor, and complex phase-transition oxides. From 2021 till 2023, he was with the Components Research Group at Intel, Hillsboro, where he led R&D efforts on novel embedded memory and logic transistor technologies. In recognition for his research contributions at Intel, he received the Components Research Division Recognition Award. He has published over 50 peer-reviewed journal and conference papers including Nature Electronics, Nature Communications, Nature Scientific Reports, IEEE International Electron Devices Meeting (IEDM), IEEE Symposium on VLSI Technology and Circuits (VLSI) and IEEE Electron device Letters (EDL). He has 2 issued patents on novel Spintronics and Plasmonic devices and over 4 pending patents on novel embedded memory with Intel.
Bachelor of Science
Electrical and Electronic Engineering
Bangladesh University of Engineering and Technology (BUET), 2022
Tanvir finished his Bachelor of Science degree from BUET in 2022 and started his Ph.D. in Electrical and Computer Engineering at the University of Texas at Dallas (UTD) starting Fall 2023. His research involves understanding the material properties, device physics and reliability of ferroelectric materials such as Hafnium Zirconium Oxide (HZO) and amorphous oxide semiconductor such as Indium Oxide. His research not only revolves around fabricating novel devices with new materials, but also meticulously characterizing their electrical properties as well developing compact models for simulation.
Bachelor of Science
Electrical and Electronic Engineering
Bangladesh University of Engineering and Technology (BUET), 2022
Shumiya finished her Bachelor of Science degree from BUET in 2022 and started her Ph.D. in Electrical and Computer Engineering at the University of Texas at Dallas (UTD) starting Fall 2024. During her undergraduate studies, she conducted research on a mobility model for ZnO nanowires. Her interests lie in exploring innovative semiconductor device fabrication methods and understanding the underlying physics. Shumiya is passionate about advancing technology through cutting-edge research and is dedicated to contributing to the field of electrical engineering.
Kharanshu Bhojak
B. Tech & M. Tech (Dual Degree)
Metallurgical Engineering and Materials Science
Indian Institute of Technology Bombay (IITB), 2024
Kharanshu completed his Bachelor's and Master's from IITB in 2024 and began his Ph.D. in Electrical and Computer Engineering at the University of Texas at Dallas (UTD) in Spring 2025. For his master's thesis, he worked on the synthesis and characterization of multiferroic laminated nanostructures. His research explores AI-guided modeling and development of digital twin framework to understand the physics and reliability of emerging semiconductor devices such as amorphous oxide semiconductors (AOS) transistors and ferroelectric memory for next-generation computing hardware.