Novel Materials & Devices

Amorphous oxide semiconductor (AOS) provide an excellent pathway for building back-end-of-line (BEOL) compatible vertically stacked capacitors, transistors and memories for monolithic 3D integrated circuits (3D ICs). Besides being technologically relevant, AOS also provides an excellent playground for investigating fundamental materials and device physics. We are interested in answering fundamental questions that connect structural disorder with carrier transport and reliability physics? 

Ferroelectricity due to polar orthorhombic phase in doped Hafnium Oxide provides a promising pathway to realize extremely non-volatile dense 3D memories. We explore ways to stabilize ferroelectricity in ultra-thin films through  composition and strain engineering. We are interested in exploring fundamental science that allows lowering switching energy barriers, uncover exotic topological states (domain walls, vortices, skyrmions) and new physics (quantum fluctuations and phase-transitions).