Publications

 Publication Highlights

• Author Profile (Click)

• Total number of journal publications: 164

• Total number of citations: 4989 (Scopus)

• h-index: 37 (Scopus)

• Book Chapter “Back End of the Line,” in Atomic Layer Deposition for Semiconductors, Springer, ISBN: 978-1-4614-8054-9.

 Full Publications List

(2024)

                 1. New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition.

          Mohd Zahid Ansari, Petr Janicek, Sook NamGung, Hyangil Kim, Dip K. Nandi, Taehoon Cheon, Masoom Raza Siddiqui, Muhammad Imran, Yujin Jang,   Jong- Seong Bae, Tae Eun Hong, Chaehyun Park, Yeseul Son, Sang Bok Kim, Soo-Hyun Kim 

                    (2024) Surfaces and Interfaces 46 104014 

2. Mo-based MXenes: Synthesis, properties, and applications.

     Iftikhar Hussain, Umay Amara, Faiza Bibi, Abdul Hanan, Muhammad Nazim Lakhan, Irfan Ali Soomro, Amjad Khan, Irum Shaheen, Uzair Sajjad, Gokana      Mohana Rani, Muhammad Sufyan Javed, Karim Khan, Muhammad Bilal Hanif, Mohammed A Assiri, Sumanta Sahoo, Wail Al Zoubi, Debananda Mohapatra, Kaili Zhang 

(2024) Advances in Colloid and Interface Science, 103077 

            3. Atomic Layer Deposition—A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors.

      Mohd Zahid Ansari, Iftikhar Hussain, Debananda Mohapatra, Sajid Ali Ansari, Reza Rahighi, Dip K Nandi, Wooseok Song, and Soo-Hyun Kim

                (2024) Advanced Science. 2303055

(2023)

1. Fluorine-free Plasma Enhanced Atomic Layer Deposited Ultrathin Tungsten Nitride Thin Films for Dual Diffusion Barrier Performance.

    Kang-Min Seo, Debananda Mohapatra, Gun-Woo Bae, Mohd Zahid Ansari, Yeseul Son, Yujin Jang, Jong-Seong Bae, Tae Eun Hong, and Soo-Hyun Kim 

    (2023) ACS Applied Nano Materials.

2. Quantitative Two-Stage Classification of Gas Mixtures Using 2-D TMDC and PGM Chalcogenides.

    Inkyu Sohn , Joungbin An , Dain Shin , Jaehyeok Kim, Tatsuya Nakazawa, Yohei Kotsugi, Soo-Hyun Kim, Hwi Yoon, Won-Yong Shin , Senior Member, IEEE,

    Seung Min Chung, and Hyungjun Kim 

    (2023) IEEE Xplore.

3. Layer Engineered MXene Empowered Wearable Pressure Sensors for Non-Invasive Vital Human–Machine Interfacing Healthcare Monitoring.

    Debananda Mohapatra, Jeong Eun Byun, Mohd Zahid Ansari, Haekyoung Kim, Taehoon Cheon, Jongmoon Jang, Young-Rae Cho, 

    Jung Woo Lee, and Soo-Hyun Kim 

    (2023) Advanced Materials Technologies. 2301175

4. Self-Formation of a Ru/ZnO Multifunctional Bilayer for the Next-Generation Interconnect Technology via Area-Selective Atomic Layer Deposition.

    Yuki Mori, Taehoon Cheon, Yohei Kotsugi, Youn-Hye Kim, Yejin Park, Mohd Zahid Ansari, Debananda Mohapatra, Yujin Jang, Jong-Seong Bae, Woobin

    Kwon, Gahui Kim, Young-Bae Park, Han-Bo-Ram Lee, Wooseok Song, and Soo-Hyun Kim 

    (2023) Small. 19(34)

5. Nucleation-controlled growth of Cu thin films electrodeposited directly on ALD Ru diffusion barrier in additive-free electrolyte for Cu interconnect.

    Byoungyong Im, Sunjung Kim , Soo-Hyun Kim

    (2023) Electrochimica Acta. 270

6. Seedless electrodeposition of Cu thin films on ALD Ru diffusion barriers with different electrical properties.

    Byoungyong Im, Kiyeung Mun, Sunjung Kim , Soo-Hyun Kim

    (2023) Electrochimica Acta. 443

7. Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene 

    ligand-containing hafnium precursor.

     Mohd Zahid Ansari, Petr Janicek, Ye Jin Park, Sook NamGung, Bo Yeon Cho, Dip K. Nandi, Yujin Jang, Jong-Seong Bae, Tae Eun Hong, Taehoon Cheon,

     Wooseok Song, Ki-Seok An, Soo-Hyun Kim

    (2023) Applied Surface Science. 620

8. Process Controlled Ruthenium on 2D Engineered V-MXene via Atomic Layer Deposition for Human Healthcare Monitoring.

    Debananda Mohapatra, Yujin Shin, Mohd Zahid Ansari, Youn-Hye Kim, Ye Jin Park, Taehoon Cheon, Haekyoung Kim, Jung Woo Lee, Soo-Hyun Kim

    (2023) Advanced Science. 10(12)

9. Atomically dispersed iridium catalysts on silicon photoanode for efficient photoelectrochemical water splitting 

    Sang Eon Jun, Youn-Hye Kim,  Jaehyun Kim, Woo Seok Cheon, Sungkyun Choi, Jinwook Yang, Hoonkee Park, Hyungsoo Lee, Sun Hwa

    Park, Ki Chang Kwon, Jooho Moon, Soo-Hyun Kim, Ho Won Jang

    (2023) Nature Communications. 14, 609

(2022)

             1. Highly Efficient and Stable Iridium Oxygen Evolution Reaction Electrocatalysts Based on Porous Nickel Nanotube Template Enabling Tandem Devices    

  with Solar-to-Hydrogen Conversion Efficiency Exceeding 10%.

       Yungi Nam, Daehan Kim, Jinwoo Chu, Na-Yeon Park, Tae Gun Kim, Kyung Joong Kim, Soo-Hyun Kim, Byungha Shin 

      (2022)  Advanced Science. 9(9)

2. Atomic Layer Deposited RuO2 Diffusion Barrier for Next Generation Ru-Interconnects

     Youn-Hye Kim, Minsu Kim, Yohei Kotsugi, Taehoon Cheon, Debananda Mohapatra, Yujin Jang, Jong-Seong Bae, Tae Eun Hong, Rahul Ramesh, Ki-Seok An,

     Soo-Hyun Kim

    (2022) Advanced Functional Materials. 32(44)

3. Fundamentals and recent progress of Sn-based electrode materials for supercapacitors: A comprehensive review

    Mohd Zahid Ansari , Sajid Ali Ansari , Soo-Hyun Kim

    (2022) Journal of Energy Storage. 53

4. Critical Aspects of Various Techniques for Synthesizing Metal Oxides and Fabricating Their Composite-Based Supercapacitor Electrodes: A Review

    Mohd Zahid Ansari, Kang-Min Seo, Soo-Hyun Kim, Sajid Ali Ansari 

    (2022) Nanomaterials. 12(11)

5. In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric

    Yang Gyu Bak, Ji Woon Park, Ye Jin Park, Mohd Zahid Ansari, Sook NamGung, Bo Yeon Cho, Soo-Hyun Kim, Hee Young Lee 

    (2022) Thin Solid Films. 753

6. Industrially scalable exfoliated graphene nanoplatelets by high-pressure airless spray technique for high-performance supercapacitors

    Ramu Banavath, Siva Sankar Nemala, Soo-Hyun Kim, Sivasambu Bohm, Mohd Zahid Ansari, Debananda Mohapatra, Parag Bhargava 

    (2022) FlatChem. 33

7. Development of RuS2 for near-infrared photodetector by atomic layer deposition and post-sulfurization 

    Tatsuya Nakazawa,  Donghyun Kim, Jaehyeok Kim, Yohei Kotsugi, Taehoon Cheon, Seung-Min Chung, Soo-Hyun Kim, Hyungjun Kim

    (2022) Rare Metals. 41

8. Quantitative Two-Stage Classification of Gas Mixtures Using 2D TMDC and PGM Chalcogenides

    Inkyu Sohn, Joungbin An, Dain Shin, Jaehyeok Kim, Tatsuya Nakazawa, Yohei Kotsugi, Soo-Hyun Kim, Hwi Yoon, Won-Yong Shin, Seung Min Chung, 

    Hyungjun Kim 

    (2022) IEEE Sensors Journal. 1

9. Atomic Layer Deposition of Iridium Using a Tricarbonyl Cyclopropenyl Precursor and Oxygen

    Na-Yeon Park, Minsu Kim, Youn-Hye Kim, Rahul Ramesh, Dip K. Nandi, Tomohiro Tsugawa, Toshiyuki Shigetomi, Kazuharu Suzuki, Ryosuke Harada, Miso

    Kim, Ki-Seok An, Bonggeun Shong, and Soo-Hyun Kim

    (2022) Chemistry of Materials. 34(4)

10. Cobalt-based metal oxide coated with ultrathin ALD-MoS2 as an electrode material for supercapacitors

      Sachin A. Pawar, Dipali S. Patil, Dip K. Nandi, Muhammad Monirul Islam, Takeaki Sakurai, Soo-Hyun Kim, Jae Cheol Shin  

     (2022) Chemical Engineering Journal. 435

(2021)

1. Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films

    Ga Yeon Lee, Seungmin Yeo, Seong Ho Han, Bo Keun Park, Taeyong Eom, Jeong Hwan Kim, Soo-Hyun Kim, Hyungjun Kim, Seung Uk Son, Taek-Mo Chung

    (2021) Inorganic Chemistry. 60

2. Facile Synthesis of Zn-Co-S Nanostrip Cluster Arrays on Ni Foam for High-Performance Hybrid Supercapacitors

    Subbukalai Vijayakumar,Ganesh Dhakal,Soo-Hyun Kim,Jintae Lee,Yong Rok Lee, Jae-Jin Shim

    (2021) Nanomaterials. 11(12)

3. Artificially induced normal ferroelectric behaviour in aerosol deposited relaxor 65PMN–35PT thick films by interface engineering

    Atul Thakre, Ajeet Kumar, Min-Young Lee, Deepak Rajaram Patil, Soo-Hyun Kim, Jungho Ryu  

    (2021) Journal of Materials Chemistry C. 9

4. Preparation of tungsten-based thin films using a F-free W precursor and tert-butyl hydrazine via 2- and 3-step atomic layer deposition process

 Jin-Hyeok Lee, Romel Hidayat, Rahul Ramesh, Hyeonsu Roh, Dip K. Nandi, Won-Jun Lee, Soo-Hyun Kim

    (2021) Applied Surface Science. 578

5. Diffusion-controlled growth of Cu thin films electrodeposited directly on atomic-layer-deposited WC diffusion barrier for Cu interconnect

    Y. Kotsugi, S.-M. Han, Y.-H. Kim, T. Cheon, D. K. Nandi, R. Ramesh, N. K. Yu, K. Son, T. Tsugawa, S. Ohtakea, R. Harada, Y.-B. Park, B. Shong, and S.-H. Kim

    (2021) Chemistry of Materials. 33(14)

6. Diffusion-controlled growth of Cu thin films electrodeposited directly on atomic-layer-deposited WC diffusion barrier for Cu interconnect

     H.-M. Yoon, S. Kim, and S.-H. Kim

    (2021) Microelectronic Engineering. 248

7. Interfacial adhesion energies of Ru–Mn direct plateable diffusion barriers prepared by atomic layer deposition for advanced Cu interconnects

    K.-R. Son, Y.-H. Kim, S.-H. Kim, Y.-B. Park

    (2021) Journal of Materials Science: Materials in Electronics. 32

8. Atomic Layer Modulation of Multicomponent Thin Films through Combination of Experimental and Theoretical Approaches

    Chi Thang Nguyen, Bonwook Gu, Taehoon Cheon,Jeongwoo Park, Mohammad Rizwan Khan, Soo-Hyun Kim, Bonggeun Shong, Han-Bo-Ram Lee

    (2021) Chemistry of Materials. 33(12)

9. Low-temperature growth of crystalline Tin(II) monosulfide thin films by atomic layer deposition using a liquid divalent tin precursor

    Mohd Zahid Ansari, Petr Janicek, Dip K. Nandi, Stanislav Slang, Marek Bouska, Hongjun Oh, Bonggeun Shong, Soo-Hyun Kim 

    (2021) Applied Surface Science 565

10. Atomic layer deposition of tungsten and tungsten-based compounds using WCl5 and various reactants selected by density functional theory

      M. Lee, R. Hidayat, D. K. Nandi, T. H. Kim, Y. Kim, S. Kim, W.-J. Lee, and S.-H. Kim

     (2021) Applied Surface Science 563

11. Ultralow Loading (Single-Atom and Clusters) of the Pt Catalyst by Atomic Layer Deposition Using Dimethyl((3,4-η) N,N-dimethyl-3-butene-1-amine-N) Platinum (DDAP) on the High-Surface-Area Substrate for Hydrogen Evolution Reaction 

      R. Ramesh, S. Han, D. K. Nandi, S. Y. Sawant, D. H. Kim, T. Cheon, M. H. Cho, R. Harada, T. Shigetomi, K. Suzuki, S.-H. Kim

     (2021) Advanced Materials Interfaces. 8(3)

12. Atomic layer deposition of tungsten sulfide using a new metal-organic precursor and H2S: thin film catalyst for water splitting

      Deok-Hyun Kim, Rahul Ramesh, Dip K Nandi, Jong-Seong Bae, Soo-Hyun Kim 

     (2021) Nanotechnology. 32(7)

13. Influence of post-annealing on structural, optical and electrical properties of tin nitride thin films prepared by atomic layer deposition

      Mohd Zahid Ansari, Petr Janicek, Dip K. Nandi, Karel Palka, Stanislav Slang, Deok Hyun Kim, Taehoon Cheon, Soo-Hyun Kim  

     (2021) Applied Surface Science. 538

14. Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor

    R. Hidayat, T. Chowdhury, Y. Kim , S. Kim , T. R. Mayangsari, S.-H. Kim, W.-J. Lee

     (2021) Applied Surface Science. 538

(2020)

1. Atomic layer deposited Mo2N thin films using Mo(CO)6 and NH3 plasma as a Cu diffusion barrier

    Yong-Hwan Joo, Dip K. Nandi Rahul Ramesh, Yujin Jang, Jong-Seong Bae, Taehoon Cheon, Soo-Hyun Kim

   (2020) Journal of Alloys and Compounds. 858

2. A review on atomic layer deposited buffer layers for Cu(In,Ga)Se2 (CIGS) thin film solar cells: Past, present, and future

    Soumyadeep Sinha, Dip K. Nandi, Pravin S. Pawar, Soo-Hyun Kim, Jaeyeong Heo

    (2020) Solar Energy. 209

3. Hydrogen Evolution Reaction by Atomic Layer-Deposited MoNx on Porous Carbon Substrates: The Effects of Porosity and Annealing on Catalyst Activity

    and Stability

    Dr. Rahul Ramesh, Dr. Sandesh Y. Sawant, Dr. Dip K. Nandi, Tae Hyun Kim, Deok Hyun Kim, Seung-Min Han, Yujin Jang, Dr. Myoung Gyu Ha, Prof. Moo

   Hwan Cho, Prof. Taeho Yoon, Prof. Soo-Hyun Kim 

   (2020)  ChemSusChem. 13, 4159 

4. Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

    M. Kim, S. Nabeya, S.-M. Han, M.-S. Kim, S. Lee, H.-M. Kim, S.-Y. Cho, D.-J. Lee, S.-H. Kim, and K.-B. Kim

    (2020) ACS Applied Materials and Interfaces. 12(12)

5. Atomic layer deposition of high-quality Pt thin film as an alternative interconnect replacing Cu

    Seung-Min Han, Dip K. Nandi, Yong-Hwan Joo, Toshiyuki Shigetomi, Kazuharu Suzuki, Shunichi Nabeya, Ryosuke Harada, and Soo-Hyun Kim

    (2020) Journal of Vacuum Science & Technology A. 38(3)

6. Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene

    Sungmin Park, Bo-Eun Park, Hwi Yoon, Sanghun Lee, Taewook Nam, Taehoon Cheon, Soo-Hyun Kim, Hwansung Cheon, Sangkyun Im, Taegeun Seong,

   Hyungjun Kim 

   (2020) Journal of Materials Chemistry C. 4

7. Rate performance enhancement of lithium-ion battery using precise thickness-controllable-carbon-coated titanium dioxide nanowire array electrode via 

    atomic layer deposition

    Taejin Choi, Seong Dae Kim, Seungmin Yeo, Taehoon Cheon, Soo-Hyun Kim, Jong-Hyun Ahn, Hyungjun Kim 

    (2020) Electrochimica Acta. 334

(2019)

            1. Some Insights into Atomic Layer Deposition of MoNx Using Mo(CO)6 and NH3 and Its Diffusion Barrier Application

   Tae Hyun Kim, Dip K. Nandi, Rahul Ramesh, Seung-Min Han, Bonggeun Shong, and Soo-Hyun Kim

   (2019) Chem. Mater. 2019, 31, 8338-8350.

2. Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices

    Mohd Zahid Ansari, Dip K. Nandi, Petr Janicek, Sajid Ali Ansari, Rahul Ramesh, Taehoon Cheon, Bonggeun Shong, Soo-Hyun Kim

   (2019) ACS Appl. Mater. Interfaces. 2019, 11, 43608−43621

3. Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier

    Jun Beom Kim, Dip K. Nandi, Tae Hyun Kim, Yujin Jang, Jong-Seong Bae, Tae Eun Hong and Soo-Hyun Kim

   (2019) Thin Solid Films. 685(1)

4. Highly Uniform Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH3 and Selective Deposition on Defects of Graphene

    Minsu Kim, Shunichi Nabeya, Dip K. Nandi, Kazuharu Suzuki, Hyun-Mi Kim, Seong-Yong Cho, Ki-Bum Kim, and Soo-Hyun Kim

   (2019) ACS Omega, 2019 Jun 30; 4(6): 11126–11134. 

5. Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery

    Dip K. Nandi, Seungmin Yeo, Mohd Zahid Ansari, Soumyadeep Sinha, Taehoon Cheon, Jiseok Kwon, Hyungjun Kim, Jaeyeong Heo, Taeseup Song, 

    Soo-Hyun Kim 

    (2019) Electrochimica Acta. 322

6. The effect of the oxidation states of supported oxides on catalytic activity: CO oxidation studies on Pt/cobalt oxide

    Hee Chan Song, Seungtaeg Oh, Sang Hoon Kim, Si Woo Lee, Song Yi Moon, Hanseul Choi, Soo-Hyun Kim, Yongman Kim, Jihun Oh,  Jeong Young Park

    (2019) Chem. Commun. 64

7.  Revealing the Simultaneous Effects of Conductivity and Amorphous Nature of Atomic-Layer-Deposited Double-Anion-Based Zinc Oxysulfide as Superior

    Anodes in Na-Ion Batteries

    Soumyadeep Sinha, Pravin N. Didwal, Dip K. Nandi, Rakesh Verma, Jae Yu Cho, Soo-Hyun Kim, Chan-Jin Park, Jaeyeong Heo

    (2019) Small. 15(37)

8.  Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high

    performance supercapacitor electrode

    Mohd Zahid Ansari, Nazish Parveen, Dip K. Nandi, Rahul Ramesh, Sajid Ali Ansari, Taehoon Cheon, Soo-Hyun Kim 

    (2019) Scientific Reports. 9:0225

9. Evaluation of grating realized via pulse current electroplating combined with atomic layer deposition as an x-ray grating interferometer

    Tae-Eun Song  ; Seho Lee; Hee Han; Soonyoung Jung; Soo-Hyun Kim; Min Jun Kim; Seung Wook Lee; Chi Won Ahn 

    (2019) Journal of Vacuum Science & Technology A 37

10. Atomic-Layer-Deposited MoNx Thin Films on Three-Dimensional Ni Foam as Efficient Catalysts for the Electrochemical Hydrogen Evolution Reaction

      Rahul Ramesh, Dip K Nandi, Tae Hyun Kim, Taehoon Cheon, Jihun Oh, Soo-Hyun Kim 

    (2019) ACS Appl. Mater. and Interfaces. 11(19)

11. Atomic layer deposited-ZnO@3D-Ni-foam composite for Na-ion battery anode: A novel route for easy and efficient electrode preparation

      Soumyadeep Sinha, Pravin N. Didwal, Dip K. Nandi, Jae Yu Cho, Soo-Hyun Kim, Chan-Jin Park, Jaeyeong Heo  

    (2019) Ceramics International.45(1)

(2018)

1. Cobalt titanium nitride amorphous metal alloys by atomic layer deposition

    Taewook Nam, Chang Wan Lee, Taehoon Cheon, Woo Jae Lee, Soo-Hyun Kim, Se-Hun Kwon, Han-Bo-Ram Lee, Hyungjun Kim

    (2018) Journal of Alloys and Compounds. 737(15)

2. Hole-Selective CoOx/SiOx/Si Heterojunctions for Photoelectrochemical Water Splitting

    Seungtaeg Oh, Soonyoung Jung, Yong Hwan Lee, Jun Tae Song, Tae Hyun Kim, Dip K. Nandi, Soo-Hyun Kim, Jihun Oh

    (2018) ACS Catalysis. 8, 9755−9764

3. Atomic layer deposited zinc oxysulfide anodes in Li-ion batteries: an efficient solution for electrochemical instability and low conductivity

    Soumyadeep Sinha, Hari Vignesh Ramasamy, Dip K. Nandi, Pravin N. Didwal, Jae Yu Cho, Chan-Jin Park, Yun-Sung Lee, Soo-Hyun Kim,  Jaeyeong Heo  

    (2018) Jounal of Materials Chemistry A. 6

4. Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications

    Seungmin Yeo, Dip K. Nandi, R. Rahul, Tae Hyun Kim, Bonggeun Shong, Yujin Jang, Jong-Seong Bae, Jeong Woo Han, Soo-Hyun Kim, Hyungjun Kim  

    (2018) Applied Surface Science. 459

5. Low temperature atomic layer deposited molybdenum nitride-Ni-foam composite: An electrode for efficient charge storage

    Dip K. Nandi, Sumanta Sahoo, Tae Hyun Kim, Taehoon Cheon, Soumyadeep Sinha, Ramesh Rahul, Yujin Jang, Jong-Seong Bae, Jaeyeong Heo, Jae-Jin Shim,

    Soo-Hyun Kim 

    (2018) Electrochemistry Communications 93

6. Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

    Taejin Choi, Seungmin Yeo, Jeong-Gyu Song, Seunggi Seo, Byeonghyeon Jang, Soo-Hyun Kim, Hyungjun Kim 

    (2018) Surface & Coatings Technology. 344

7. Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors

                Jaseok Koo, Sammi Kim, Taehoon Cheon, Soo-Hyun Kim, Woo Kyoung Kim

    (2018) Scientific REPORTS. 8

8. Phase-controlled growth of cobalt oxide thin films by atomic layer deposition

    Soonyoung Jung, Dip K. Nandi, Seungmin Yeo, Hyungjun Kim, Yujin Jang, Jong-Seong Bae, Tae Eun Hong, Soo-Hyun Kim 

    (2018) Surface & Coatings Technology. 337(15)

9. Atomic-layer-deposited buffer layers for thin film solar cells using earth-abundant absorber materials: A review

    Soumyadeep Sinha, Dip K. Nandi, Soo-Hyun Kim, Jaeyeong Heo  

    (2018) Solar Energy Materials and Solar Cells. 179

(2017)

1. Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium

    Minsu Kim, Ki-Ju Kim, Seung-Joon Lee, Hyun-Mi Kim, Seong-Yong Cho, Min-Sik Kim, Soo-Hyun Kim, and Ki-Bum Kim

    (2017) ACS Applied Materials and Interfaces. 9

2. Influence of additives upon Cu thin film growth on atomic-layer-deposited Ru layer and trench-filling by direct electrodeposition

    Byoungyong Im, Sunjung Kim, Soo-Hyun Kim

    (2017) Thin Solid Films. 636

3. Transmission Electron Microscopy Study of the Failure Mechanism of the Diffusion Barriers (TiN and TaN) Between Al and Cu

    Soo-Hyun Kim

    (2017) Metals and Materials International. 23

4. Highly Uniform Atomic Layer-Deposited MoS2@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for Supercapacitors

          Dip K. Nandi, Sumanta Sahoo, Soumyadeep Sinha, Seungmin Yeo, Hyungjun Kim, Ravindra N. Bulakhe, Jaeyeong Heo, Jae-Jin Shim, Soo-Hyun Kim               (2017) ACS Applied Materials & Interfaces. 9

5. Preparation of single-phase SnSe thin-films and modification of electrical properties via stoichiometry control for photovoltaic application

    Giuk Jeong, Jekyung Kim, Oki Gunawan, Seong Ryul Pae, Soo Hyun Kim, Jae Yong Song, Yun Seog Lee, Byungha Shin  

    (2017) Journal of Alloys and Compounds. 722

6. Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and 

    plasma-enhanced atomic layer deposition for oxide thin film transistors

    Hanearl Jung; Il-Kwon Oh; Seungmin Yeo; Hyungjun Kim; Su Jeong Lee; Yun Cheol Kim; Jae-Min Myoung; Soo-Hyun Kim; Jun Hyung Lim; Sunhee Lee 

    (2017) Journal of Vacuum Science & Technology A. 35(3)

7. Fabrication of single-phase SnS film by H2 annealing of amorphous SnSx prepared by atomic layer deposition

    Byeonghyeon Jang; Seungmin Yeo; Hyungjun Kim; Byungha Shin; Soo-Hyun Kim 

    (2017) Journal of Vacuum Science & Technology A. 35(3)

8. Atomic layer deposited molybdenum disulfide on Si photocathodes for highly efficient photoelectrochemical water reduction reaction

    Seungtaeg Oh, Jun Beom Kim, Jun Tae Song, Jihun Oh, Soo-Hyun Kim 

    (2017) Jounal of Materials Chemistry A. 7

(2016)

1. Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects

    H.-J. Lee, T. Hong, and Soo-Hyun Kim

    (2016)  JOURNAL OF ALLOYS AND COMPOUNDS, 686, 1025 – 1031

2. Plasma-free atomic layer deposition of Ru thin films using H2 molecules as a nonoxidizing reactant  

    Seung-Joon Lee, Soo-Hyun Kim, Masayuki Saito, Kazuharu Suzuki, Shunichi Nabeya, Jeongyeop Lee, Sangdeok Kim, Seungjin Yeom, and Do-Joong Lee

    (2016) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 34 (4), 03150

3. Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

    Jun Beom Kim, Soo-Hyun Kim, Won Seok Han, and Do-Joong Lee  

    (2016) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 34(4), 041504

4. A controlled growth of WNx and WCx thin films prepared by atomic layer deposition 

    Jun Beom Kim, Byeonghyeon Jang, Hyun-Jung Lee, Won Seok Han, Do-Joong Lee, Han-Bo-Ram Lee, Tae Eun Hong, Soo-Hyun Kim 

    (2016) Materials Letters, 168, 218-222

5. Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu 

    Yujin Jang, Jun Beom Kim, Tae Eun Hong, So Jeong Yeo, Sunju Lee, Eun Ae Jung, Bo Keun Park, Taek-Mo Chung, Chang Gyoun Kim, Do-Joong Lee, Han-Bo-Ram Lee, Soo-Hyun Kim, 

   (2016) Journal of Alloys and Compounds, 663, 651-658

6. Formation of Ni silicide from atomic layer deposited Ni

    Jaehong Yoon, Soo Hyeon Kim, Hangil Kim, Soo-Hyun Kim, Hyungjun Kim, Han-Bo-Ram Lee 

    (2016) Current Applied Physics, 720-725

7. Effects of annealing on the properties of atomic layer deposited Ru thin films deposited by NH3 and H2 as reactants   

    Seung-Joon Lee and Soo-Hyun Kim

   (2016) Thin Solid Films, 612, 122–127

8. Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

    Jaehong Lee, Jaehong Yoon, Hyun Gu Kim, Subin Kang, Woo-Suk Oh, Hassan Algadi, Saleh Al-Sayari, Bonggeun Shong, Soo-Hyun Kim, Hyungjun Kim,

    Taeyoon Lee and Han-Bo-Ram Lee

   (2016) NPG Asia Materials, 8, e33

9.    Sci. Adv. Mater., 8, 2128–2132, (2016), doi:10.1166/sam.2016.2839

10.     Korean J. Mater. Res. Vol. 26, No. 9, 486-492 (2016), http://dx.doi.org/10.3740/MRSK.2016.26.9.486

11.     Korean J. Mater. Res. Vol. 26, No. 8, 430-437, (2016), http://dx.doi.org/10.3740/MRSK.2016.26.8.430

12.     J. Microelectron. Packag. Soc., 23(2), 49-55 (2016), http://dx.doi.org/10.6117/kmeps.2016.23.2.049

13.    Physica B 500 (2016) 4–8, http://dx.doi.org/10.1016/j.physb.2016.07.025

14.    Current Applied Physics 16 (2016) 691-695, http://dx.doi.org/10.1016/j.cap.2016.03.022

15.    Electron. Mater. Lett., Vol. 12, No. 3 (2016), pp. 404-410, DOI: 10.1007/s13391-016-5356-2

16.    Sci. Adv. Mater., 8, 866–871, (2016), doi:10.1166/sam.2016.2546

17.    Sci. Adv. Mater., 8, 854–860, (2016), doi:10.1166/sam.2016.2544

18.    Applied Surface Science 365 (2016) 160–165, http://dx.doi.org/10.1016/j.apsusc.2016.01.038

(2015)

1. Journal of Nanoscience and Nanotechnology, Jae-Hun Jung, Seung-Joon Lee, Hyun-Jung Lee, Min Young Lee, Taehoon Cheon, So Ik Bae, Masayuki Saito, Kazuharu Suzuki, Shunichi Nabeya, Jeongyeop Lee, Sangdeok Kim, Seungjin Yeom, Jong Hyun Seo, and Soo-Hyun Kim, “Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant”, 15 (11), 8472 – 8477 (2015)

2. JOURNAL OF PHYSICAL CHEMISTRY C, Tae Eun Hong, Jae-Hun Jung, Seungmin Yeo, Taehoon Cheon, So Ik Bae, and Soo-Hyun Kim, So Jeong Yeo, Hyo-Suk Kim, Taek-Mo Chung, Bo Keun Park, and Chang Gyoun Kim, Do-Joong Lee “Highly Conformal Amorphous W−Si−N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization, 119, 1548-1559 (2015).

3. Seungmin Yeo, Ji-Yoon Park, Seung-Joon Lee, Do-Joong Lee, Jong Hyun Seo, Soo-Hyun Kim, “Ruthenium and ruthenium dioxide thin films deposited by atomic layer deposition using a novel zero-valent metalorganic precursor, (ethylbenzene)(1,3-butadiene)Ru(0), and molecular oxygen”, Microelectronic Engineering 137 (2015) 16–22.

4. Sang-Kyung Choi, Hangil Kim, Junbeam Kim, Taehoon Cheon, Jong Hyun Seo, Soo-Hyun Kim, “Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization”, Thin Solid Films 590 (2015) 311–317.

5. ACS Appl. Mater. Interfaces (2015), 7, 15351−15358, DOI: 10.1021/acsami.5b03224

6. Materials Science in Semiconductor Processing 33 (2015) 154–160, http://dx.doi.org/10.1016/j.mssp.2015.02.004

7.Applied Surface Science 343 (2015) 128–132, http://dx.doi.org/10.1016/j.apsusc.2015.03.093

8. Applied Surface Science 349 (2015) 673–682, http://dx.doi.org/10.1016/j.apsusc.2015.05.062

9. Journal of Alloys and Compounds 644 (2015) 317–323, http://dx.doi.org/10.1016/j.jallcom.2015.04.120

10. Materials Science in Semiconductor Processing 29 (2015) 139–142, http://dx.doi.org/10.1016/j.mssp.2014.01.016

11. Biosensors and Bioelectronics 63 (2015) 325–330, http://dx.doi.org/10.1016/j.bios.2014.07.059

12. Nanoscale, (2015),7, 1308-1313, DOI: 10.1039/c4nr04292a

(2014)

1. Myung Jun Kim, Seunghoe Choe, Hoe Chul Kim, Seung-Joon Lee, Soo-Hyun Kim, Oh Joong Kwon, Jae Jeong Kim, Cu direct electrodeposition using step current for superfilling onRu-Al2O3 layer, Electrochimica Acta 147 (2014) 371–379.

2. Ji-Yoon Park , Seungmin Yeo, Taehoon Cheon, Soo-Hyun Kim, Min-Kyu Kim, Hyungjun Kim,Tae Eun Hong, Do-Joong Lee, Growth of highly conformal ruthenium-oxide thin films with enhanced nucleation by atomic layer deposition, Journal of Alloys and Compounds 610 (2014) 529–539

3. Ki-Yeung Mun, Tae Eun Hong, Taehoon Cheon, Yujin Jang, Byoung-Yong Lim, Sunjung Kim, Soo-Hyun Kim, The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect, Thin Solid Films 562 (2014) 118–125.

4. Tae Eun Hong, Tae-Ho Kim, Jae-Hun Jung, Soo-Hyun Kim, and Hoon Kim, TaCx Thin Films Prepared by Atomic Layer Deposition as Diffusion Barriers for Cu Metallization, J. Am. Ceram. Soc., 97 [1] 127–134 (2014).

5. IEEE Electron Device Letters Volume: 35, Issue: 10, 1028 – 1030 (2014), 10.1109/LED.2014.2345740

6. Materials Science in Semiconductor Processing 27 (2014) 297–302, http://dx.doi.org/10.1016/j.mssp.2014.07.012

7. J. Am. Ceram. Soc., 97 [4] 1164–1169 (2014), DOI: 10.1111/jace.12762

8. ACS Appl. Mater. Interfaces (2014), 6, 8281−8287, dx.doi.org/10.1021/am501107c

9. Sensors and Actuators A 210 (2014) 197–204, http://dx.doi.org/10.1016/j.sna.2014.02.005

10. ACS Appl. Mater. Interfaces 2014, 6, 2764−2769, dx.doi.org/10.1021/am4052987

11. J. Phys. Chem. C (2014), 118, 408−415, dx.doi.org/10.1021/jp409738f

(2013)

1.    Myung Jun Kim, Hoe Chul Kim, Soo-Hyun Kim, Seungmin Yeo,Oh Joong Kwon, and Jae Jeong Kim, Direct Electrodeposition of Cu on Ru-Al2O3 Layer, Journal of The Electrochemical Society, 160 (12) D3057-D3062 (2013).

2.   Taeeun Hong, Taehoon Cheon, Soo-Hyun Kim, J.-G. Kim, Y.-B. Park, and O.-J. Kwon, “Effects of AlOx incorporation into atomic layer deposited Ru thin films: Applications to the Cu direct plating technology”, Journal of Alloys and Compounds 580 (2013) 72–81.

3.   Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadienyl Ru(0) as a seed layer for copper metallizations”, Seungmin Yeo, Sang-Hyeok Choi, Ji-Yoon Park, Soo-Hyun Kim, Taehoon Cheon, Byoung-Yong Lim and Sunjung Kim, Thin Solid Films 546 (2013) 2–8. 

4. “Atomic Layer Deposition of Ru Thin Films with Enhanced Nucleation  Using a Ru(0) Metallorganic Precursor and O2”, Tae Eun Hong, Sang-Hyeok Choi, Seungmin Yeo, Ji-Yoon Park, Soo-Hyun Kim, Taehoon Cheon, Hoon Kim, Min-Kyu Kim and Hyungjun Kim, ECS Journal of Solid State Science and Technology, 2 (3) P47-P53 (2013).

5.  ACS Nano (2013), 7, 12, 11333–11340, https://doi.org/10.1021/nn405194e

6.  J. Mater. Chem. C, 2013, 1, 4761–4769, DOI: 10.1039/c3tc30469h

(2012)

1.“A bilayer diffusion barrier of Ru/WSixNy for advanced Cu interconnects”, Tae-Kwang Eom, Windu Sari, Taehoon Cheon, Woo Kyoung Kim and Soo-Hyun Kim, Thin Solid Films, 521, 73-77 (2012).

2.“Characterization of a Ru-based Ternary-oxide Thin Film for a Diffusion Barrier”, Tae Eun Hong, E. D. Jeong, M. R. Byeon, Y. B. Kang, Ho-Soon Yang, and Soo-Hyun Kim, Journal of the Korean Physical Society, 61 (6), 984-987 (2012).

3.“Atomic layer deposition of Ru thin film using N2/H2 plasma as a reactant”, Tae Eun Hong, Ki-Yeung Mun, Sang-Kyung Choi, Ji-Yoon Park, Taehoon Cheon, Woo Kyoung Kim, Byoung-Yong Lim, Sunjung Kim, and Soo-Hyun Kim, Thin Solid Films, 520 (19) 6100-6105 (2012).

4.“Interfacial adhesion energy of Ru-AlO thin film deposited by atomic layer deposition between Cu and SiO2: Effect of the composition of Ru-AlO thin film”, Jeong-Kyu Kim, Tae-Hoon Cheon, Soo-Hyun Kim, and Young-Bae Park, Japanese Journal of Applied Physics, 05EB04 (2012).

5. Journal of the Korean Physical Society, Vol. 61, No. 6, September (2012), pp. 984∼987, DOI: 10.3938/jkps.61.984

(2011)

1. ALD-grown Al2O3 as a diffusion barrier for stainless steel substrates for flexible Cu(InGa)Se2 solar cells

Hyeonwook Park, Sung Cheol Kim, Hae Chul Bae, Taehoon Cheon, Soo-Hyun Kim and Woo Kyoung Kim

(2011) Molecular Crystals and Liquid Crystals, 551 (1) 147-153

2. Characteristics of plasma-enhanced atomic layer deposited RuSiN as a diffusion barrier against Cu

Tae-Kwang Eom, Soo-Hyun Kim, Dae-Hwan Kang, and Hoon Kim

(2011) Journal of The Electrochemical Society, 158 (11) D657-D663

3. Atomic layer deposition of Co using N2/H2 plasma as a reactant

Jaehong Yoon, Han-Bo-Ram Lee, Doyoung Kim, Taehoon Cheon, Soo-Hyun Kim, and Hyungjun Kim

(2011) Journal of The Electrochemical Society, 158 (11) H1179-H1182

4. Electrochemical formation of Cu nanowires on W surface patterned by atomic force microscope tip

Sunjung Kim, Kye-Sun Park, and Soo-Hyun Kim

(2011) Electrochemical and Solid-State Letters, 14 (11) D103-D106

5. Plasma-enhanced atomic layer deposition of TaCx films using tris(neopentyl) tantalum dichloride and H2 plasma

Tae-Ho Kim, Tae-Kwang Eom, Soo-Hyun Kim, Dae-Hwan Kang, Hoon Kim,, Sangho Yu, and Jin Mook Lim

(2011) Electrochemical and Solid-State Letters, 14 (8) D89-D93

6. Ru/WNx bilayers as diffusion barriers for Cu interconnects

Windu Sari, Tae-Kwang Eom, Sang-Hyeok Choi, and Soo-Hyun Kim

(2011) Japanese Journal of Applied Physics 50 05EA08

7. Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating

Sang-Hyeok Choi, Taehoon Cheon, Soo-Hyun Kim, Dae-Hwan Kang, Gye-Soon Park and Sun-Jung Kim

(2011) Journal of The Electrochemical Society, 158 (6) D351-D356

8. Atomic layer deposition of RuAlO thin films as a diffusion barrier for seedless Cu interconnects

Taehoon Cheon, Sang-Hyeok Choi, and Soo-Hyun Kim, Dae-Hwan Kang

(2011) Electrochemical and Solid-State Letters, 14 (5) D57-D61

9. Plasma enhanced atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and NH3 plasma

 Windu Sari, Tae-Kwang Eom, Soo-Hyun Kim, and Hoon Kim

(2011) Journal of The Electrochemical Society, 158 (1) D42-D47

10. Formation of nano-crystalline Ru-based ternary thin films by plasma-enhanced atomic layer deposition

Tae-Kwang Eom, Soo-Hyun Kim, Kye-Sun Park, Sunjung Kim,and Hoon Kim

(2011) Electrochemical and Solid-State Letters, 14 (1) D10-¬D12

11. Electrochemical Formation of Cu Nanowires on W Surface Patterned by Atomic Force Microscope Tip

Sunjung Kim, Kye-Sun Park, Soo-Hyun Kim

(2011) Electrochemical and Solid-State Letters 14 (11) D103-D106

12. Synthesis of Si Nanowires by Using Atmospheric Pressure Chemical Vapor Deposition with SiCl4

Taejin Choi, Hyungjun Kim, Doyoung Kim, Taehoon Cheon, Soohyun Kim

(2011) Journal of the Korean Physical Society, 59(2(1)), 485 - 488 

13. Nanotechnology 22 (2011) 095305, doi:10.1088/0957-4484/22/9/095305

14. Adv. Funct. Mater. (2011), 21, 448–455, DOI: 10.1002/adfm.201001342 

15. Journal of The Electrochemical Society, 158 (5) D277-D281 (2011), DOI: 10.1149/1.3568881

(2010)

1. Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier

    Do-Joong Lee, Sung-Soo Yim, Ki-Su Kim, Soo-Hyun Kim, Ki-Bum Kim 

    (2010) JOURNAL OF APPLIED PHYSICS 107, 013707

2. Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device

    Quanli Hu, Tae-Kwang Eom, Soo-Hyun Kim, Hyung-Jun Kim, Hyun Ho Lee, Yong-Sang Kim, Du Yeol Ryu, Ki-Bum Kim and Tae-Sik Yoon 

    (2010) Electrochemical and Solid-State Letters, 13, 11 H366-H369

3. Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation

    Quanli Hu, Il Seo, Zhenning Zhang, Seung-Hyun Lee, Hyun-Mi Kim, Soo-Hyun Kim, Yong-Sang Kim, Hyun Ho Lee, Ya-Hong Xie, Ki-Bum Kim, Tae-Sik Yoon  

    (2010) Thin Solid Films 518, S217–S221

4. Current Applied Physics 10 (2010) S286–S289, doi:10.1016/j.cap.2009.04.021

(2009)

1. Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2

Tae-Kwang Eom, Windu Sari, Kyu-Jeong Choi, Woong-Chul Shin, Jae Hyun Kim, Do-Joong Lee, Ki-Bum Kim, Hyunchul Sohn, and Soo-Hyun Kim 

(2009) Electrochemical and Solid-State Letters, 12 (11) D85-D88

2. Pulsed CVD-W nucleation layer using WF6 and B2H6 for low resistivity W

Choon-Hwan Kim, Il-Cheol Rho, Soo-Hyun Kim, Il-Keoun Han, Hyo-Sang Kang, Seung-Wook Ryu, and Hyeong-Joon Kim

(2009) Journal of The Electrochemical Society, 156 (9) H685-H689

3. Improvement of the diffusion barrier performance of Ru by incorporating a WNx thin film for direct-plateable Cu interconnects

Windu Sari, Tae-Kwang Eom, Chan-Wook Jeon, Hyunchul Sohn, and Soo-Hyun Kim

(2009) Electrochemical and Solid-State Letters, 12 (7) H248-H251

4. Improvement of adhesion performances of CVD-W films deposited on B2H6 ­Based ALD-W nucleation layer

Choon-Hwan Kim, Il-Cheol Rho, Soo-Hyun Kim, Yong-Sun Sohn, Hyo-Sang Kang, and Hyeong-Joon Kim

(2009) Electrochemical and Solid-State Letters, 12 (3) H80-H83

(2008)

1. A bilayer diffusion barrier of ALD-Ru/ALD-TaCN for direct plating of Cu

Soo-Hyun Kim, Hyun-Tae Kim, Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Hyun-Mi Kim Ki-Bum Kim Hyuncul Sohn

(2008) Journal of The Electrochemical Society, 155 (8) H589-H594 

2. Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Soo-Hyun Kim, Tae-Sik Yoon, Ki-Bum Kim

(2008) Journal of Applied Physics, 103, 113509 

3. Diffusion barriers between Al and Cu for the Cu interconnect of memory devices

Soo-Hyun Kim, Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Hyun-Mi Kim, Ki-Bum Kim, Hyunchul Sohn

(2008) Electrochemical and Solid-State Letters, 11 (5) H127-H130

4. Phase and microstructure of ALD-W films deposited using B­­2H6 and WF6 and their effects on CVD-W growth

Soo-Hyun Kim, Seung-Jin Yeom, Nohjung Kwak, Hyunchul Sohn

(2008) Journal of The Electrochemical Society, 155 (2) D148-D154

(2007)

1. Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices

Soo-Hyun Kim, Jeong-Tae Kim, Nohjung Kwak, Jinwoong Kim, Tae-Sik Yoon, Hyunchul Sohn

(2007) J. Vac. Sci. Technol., B 25 1574- 1580

2. Characteristics of ALD tungsten nitride using B2H6, WF6, and NH3 and application to contact barrier layer for DRAM

Soo-Hyun Kim, Jun-ki Kim, Ju Hee Lee, Nohjung Kwak, Jinwoong Kim, Sung-Hoon Jung, Mi-Ran Hong, Sang Hyeob Lee, Josh Collins, Hyunchul Sohn

(2007) Journal of The Electrochemical Society, 154 (8) D435-D441

(2006)

1. A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug process

Soo-Hyun Kim, Nohjung Kwak, Jinwoong Kim, and Hyunchul Sohn

(2006) Journal of The Electrochemical Society, 153, G887

2. Characteristics of the nano-scale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition 

Joo Wan Lee, Soo-Hyun Kim, No Jung Kwak, Young Jin Lee, Hyun Chul Sohn and Jin Woong Kim Ho-Jung Sun

(2006) J. Vac. Sci. Technol., B 24, 1460 

3. Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3 

Soo-Hyun Kim, Jun-Ki Kim, and Nohjung Kwak, Hyunchul Sohn, and Jinwoong Kim, Sung-Hoon Jung and Mi-Ran Hong, Sang-Hyeob Lee and Josh Collins, (2006) Electrochemical and Solid-State Letters, 9, C54

(2005)

1. Effects of B2H6 Pretreatment on ALD of W Film Using a Sequential Supply of WF6 and SiH4

Soo-Hyun Kim, Eui-Seong Hwang, Baek-Mann Kim, Joo Wan Lee, Ho-Jung Sun, Tae Eun Hong, Jun-Ki Kim, Hyunchul Sohn, Jinwoong Kim, and Tae-Sik Yoon

   (2005) Electrochemical and Solid-State Letters, 8, C155 

2. Epitaxial growth of CoSi2 in decananano contact opening on a (100) silicon substrate

Ho-Jung Sun, Young-Jin Lee, Soo-Hyun Kim, Joo-Wan Lee, Ja-Chun Ku, Uisik Kim, and Nak-Kyun Sung

 (2005) Applied physics Letters, 86, 221919 

3. Characterizations of Pulsed Chemical Vapor Deposited (CVD)-Tungsten (W) as a Nucleation Layer for Ultrahigh Aspect Ratio CVD-W Plug Fill Process

Soo-Hyun Kim, Eui-Sung Hwang, Seung-Ho Pyi, Ho-Jung Sun, Joo-Wan Lee, Jun-Ki Kim, Nohjung Kawk, Hyunchul Sohn, and Jinwoong Kim

(2005) Journal of The Electrochemical Society, 152, C408

(2004)

1. Physical and electrical characteristics of physical vapor-deposited tungsten for bit line process

 Joo-Wan Lee, Jun Ki Kim, Soo-Hyun Kim, Ho-Jung Sun, Hong-Sun Yang, Hyun Chul Sohn, and Jin Woong Kim

(2004) Japanese Journal of Applied Physics, 43, 8008

2. Pulsed Chemical Vapor Deposition of Tungsten Thin Film as a Nucleation Layer for Tungsten Plug-Fill

Soo-Hyun Kim, Eui-Sung Hwang, Sang-Yup Han, In-Haeng Lee, Seung-Ho Pyi, Nohjung Kawk, Hyunchul Sohn, Jinwoong Kim, and Gi Bo Choi

(2004) Electrochemical and Solid-State Letters, 7, G195 

3. Characterizations of atomic layer deposited-WNxCy thin film as a diffusion barrier for copper metallization

Soo-Hyun Kim, Su Suk Oh, Hyun-Mi Kim, Dae-Hwan Kang, Ki-Bum Kim, Wei-Min Li, Suvi Haukka, and M. Tuominen

(2004) Journal of The Electrochemical Society, 151, C272

(2003)

1. Atomic layer deposited- WNxCy thin film as a diffusion barrier for copper metallization

Soo-Hyun Kim, Su Suk Oh, Dae-Hwan Kang, Ki-Bum Kim, Wei-Min Li, Suvi Haukka, and M. Tuominen

(2003) Applied physics Letters, 82, 4486

2. Multilayer diffusion barrier using a thin interlayer metal (M = Ru, Cr, Zr) between two TiN films for copper metallization

Soo-Hyun Kim, Ki Tae Nam, Arindom Datta, Hyun-Mi Kim, Dae-Hwan Kang, and Ki-Bum Kim

(2003) J. Vac. Sci. Technol, B21, 804

(2002)

1. Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon

   Soo-Hyun Kim, Ki Tae Nam, Arindom Datta, and Ki-Bum Kim

   (2002) Journal of Applied Physics, 92, 5512 

2. Optimization of Al interlayer thickness for the multilayer diffusion barrier scheme in Cu metallization

 Arindom Datta, Ki Tae Nam, Soo-Hyun Kim, and Ki-Bum Kim

 (2002) Journal of Applied Physics, 92, 1099

3.  The effect of ion beam bombardment on the properties of Ta(C)N films deposited from pentakis-diethylamido-tantalum

     Soo-Hyun Kim, Se-Joon Im, and Ki-Bum Kim

    (2002) Thin Solid Films, 415, 177

(2001)

1. Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization 

Ki Tae Nam, Arindom Datta, Soo-Hyun Kim, and Ki-Bum Kim 

(2001) Applied physics Letters, 79, 2549 

(2000)

1. Effect of Ion Bombardment during Chemical Vapor Deposition of TiN Films

Ki-Chul Park, Soo-Hyun Kim, and Ki-Bum Kim 

(2000) Journal of The Electrochemical Society, 147, 2711

(1999)

1.  A comparative study of film properties of chemical vapor deposited TiN films as diffusion barriers for Cu metallization

    Soo-Hyun Kim, Deuk-Seok Chung, Ki-Chul Park, Ki-Bum Kim, and Seok-Hong Min

   (1999) Journal of The Electrochemical Society, 146, 1455

Patents

Patent Highlights

·  Total number of patents (granted): 23

·  Total number of patents (Pending): 7

·  US Patent (granted):2, Japan PCT (pending): 1, Taiwan PCT (pending):1

Patents (Granted/Selected)

1. 확산 방지막의 형성 방법, 상기 확산 방지막을 포함하는 반도체 소자의 금속 배선 및 이의 제조 방법, 김수현, 이현정, 이정엽, 김상덕, 염승진, 2021.07.14 (KR 10-2279757)

2. 루테늄 박막 형성 방법, 김수현, 이현정, 나베야 슌이치, 2019.04.23 (KR 10-1973549)

3. 사산화삼코발트 박막 형성 방법, 김수현, 정순영, 김태현, 2018.07.23 (KR 10-1882733)

4. 텅스텐 함유 박막 형성 방법, 김수현, 김준범, 정순영 2016. 05. 10, (KR 10-1621473)

5. 원자층 증착법에 의한 루테늄 박막 형성 방법 및 그를 이용한 루테늄 박막, 여승민, 김수현, 2013. 09. 10, (KR 10-1309043)

6. “원자층 증착법에 의한 박막 형성 방법, 이를 포함하는 반도체 소자의 배선 및 그 제조 방법”, 천태훈, 김수현, 2012. 10. 26, (KR 10-1196746).

7.  Method for forming metal wiring in semiconductor devices, Soo-Hyun Kim and Jun Ki Kim, Oct 2, 2007 (US Patent 7276443).

*Full patent list can be provided upon the request.

Teaching Activities

• Semiconductor Device Processing: For senior

• Thin Films Deposition: For junior

• Electronic Properties of Materials: For Junior

•  VLSI Fabrication Technology: For graduate

• Thin Film Technology: For graduate