Alumni

Windu Sari

M.S. (2010.02.)

Thesis: A study on the atomic layer deposition (ALD) of Ru thin film as a seed layer for copper metallizations

Current position

Tae-Kwang Eom

M.S. (2010.08.)

Thesis: Ru-Si-N Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for the Direct Plating of Cu

Current position: R&D Manager, TaeguTec

Taeho Kim

M.S. (2011.08.)

Thesis: A Study on Plasma-Enhanced Atomic Layer Deposition of TaCx Films and Applications to a Metal Gate and Diffusion Barrier for Cu Metallization

Current position: Process Engineer 4, Lam Research Korea

Taehoon Cheon

Ph.D. (2023.02) / M.S. (2011.08.)

Thesis: Atomic Layer Deposition of Novel Ru-Al-O Thin Films for Seedless Copper Electroplating Application / Advanced Transmission Electron Microscopy (TEM) Study on Atomic Layer Deposited Ru-based thin films for Future Metallization

Current position: Specialized Technician, Daegu Gyeongbuk Institute of Science and Technology

Sang-Hyuk Choi

M.S. (2011.08.)

Thesis: A study on atomic layer deposition (ALD) of Ru thin films using novel Ru(0) metallorganic precursor

Current position: Principal Researcher, Ceratrak

Kiyeung Mun

M.S. (2012.02.)

Thesis: A study on plasma-enhanced atomic layer deposition of Ru thin film using N2/H2 plasma as a reactant

Current position: Senior Research Engineer, Hansol chemical 

Sang-Kyung Choi

M.S. (2013.02.)

Thesis: A study on plasma-enhanced atomic layer deposition Formation of TiCx/TiNx thin film and metal gate and Research on application to copper diffusion barrier

Current position: Account Manager, Thermofisher Scientific

Seungmin Yeo

M.S. (2013.02.)

Thesis: A study on atomic layer deposition of Ru thin films using novel Ru(0) metallorganic precursors as a seed layer for copper metallizations

Current position: Process Engineer, Jusung Engineering

Ji-Yoon Park

M.S. (2013.02.)

Thesis: A study on atomic layer deposition of ruthenium-oxide thin films and application of bottom electrode with high-permittivity dielectric

Current position: Manager, 3RT

Jae Hoon Jung

M.S. (2014.08.)

Thesis: Highly Conformal Amorphous W-Si-N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

Current position: Technical Service Engineer, Wonik IPS 

Han Gil Kim

M.S. (2015.02.)

Thesis: A Study on the Atomic Layer Deposition (ALD) of p-type Copper(I) Oxide Cu2O Thin Films and Application of p-Cu2O/n-Si Nanowire Photodiode

Current position: Application Engineer, KLA

Seungjoon Lee

M.S. (2015.02.)

Thesis: A study on thermal atomic layer deposition of Ruthenium(Ru) thin films using a new Ru metallorganic precursor and non-oxidizing reactant

Current position: Specialist, LG Innotek

Yujin Jang

M.S. (2015.08.)

Thesis: A Study on the growth of molybdenum-based thin films using atomic layer deposition

Current position: Researcher, Korea Basic Science Institute 

Hyun Jung Lee

M.S. (2016.02.)

Thesis: Plasma Enhanced Atomic Layer  Deposition of Ru-Mn Thin Films as a diffusion layer for the Direct Plating of Cu

Current position: Technical Engineer, Daegu Gyeongbuk Institute of Science and Technology

Min Young Lee

M.S. (2016.02.)

Thesis: Ruthenium thin films by thermal atomic layer deposition using new zero valent Ru precursors as a seed layer for copper

Current position: Researcher, Daegu Gyeongbuk Institute of Science and Technology

Jun-Beom Kim

M.S. (2016.02.)

Thesis: A controlled growth of tungsten-based thin films prepared by atomic layer deposition

Current position: Senior Researcher

Byeong Hyeon Jang

M.S. (2016.08.)

Thesis: A study on atomic layer deposition of high-quality tin monosulfide film as an absorber layer for solar cell device

Current position: Customer Support & application scientist, Oxford Instruments

Soonyoung Jung

M.S. (2017.02.)

Thesis: Controlled growth of cobalt oxide thin films by atomic layer deposition for catalyst of water splitting

Current position: Director of Research, Ecobean

Shunichi Nabeya

M.S. (2019.02.)

Thesis: Atomic layer deposition of nickel and nickel-based alloy thin films using non-oxidizing reactant

Current position: Manager, TATANAKA Precious Metal, Japan

Tae Hyun Kim

M.S. (2019.02.)

Thesis: Atomic layer deposition of MoNx thin film and its application into diffusion barrier against Cu and the catalyst for water splitting

Current position: Ph.D. student at Yonsei University, CEO of LOTECH

Seungmin Han

M.S. (2020.02.)

Thesis: Study on atomic layer deposition of high-quality platinum thin films using a new Pt metal-organic precursor

Current position: Research Associate, Air Liquide

Yong Hwan Joo

M.S. (2020.02.)

Thesis: Study on low resistivity molybdenum nitride thin films prepared plasma enhanced atomic layer deposition and effect of post annealing

Current position: Associate Researcher, Korea Intelligent Automotive parts promotion Institute

Deokhyun Kim

M.S. (2020.08.)

Thesis: Atomic layer deposition of WSx thin films using Tungsten tris(3-hexyne) carbonyl and H2S and the effects of post-annealing on their properties

Current position: Researcher, Soulbrain

Na-Yeon Park

M.S. (2021.02.)

Thesis: A study on atomic layer deposition of Iridium thin films using a new metal-organic precursor for water splitting application

Current position: Process Engineer, SAMSUNG ELECTRONICS

Jin Hyeok Lee

M.S. (2021.02.)

Thesis: A study on atomic layer deposition of tungsten-based thin films using a new fluorine-free W precursor and several reactants

Current position: Researcher, KOMICO

Ansari Mohd Zahid

Ph.D. (2021.05.)

Thesis: Low temperature atomic layer deposition of tin sulfide and nitride thin films towards energy storage applications

Current position: Research Professor, MSE, Yeungnam University

Youn Hye Kim

M.S. (2022.02.)

Thesis: Atomic layer deposition of RuO2 using a new metal-organic precursor as a diffusion barrier for Ru interconnect

Current position: Process Engineer, SAMSUNG ELECTRONICS

Kang-Min Seo

M.S. (2022.08.)

Thesis: Plasma-enhanced atomic layer deposition of tungsten nitride thin film using a fluorine-free W precursor, WCl5

Current position: Process Engineer, TEL Korea

Yejin Park

M.S. (2023.02.)

Current position: Process Engineer, SAMSUNG ELECTRONICS

Gunwoo Bae

M.S. (2023.08.)

Current position: UP Chemical

Minwoo Kim

M.S. (2026.02.)

Current position: 

Yejun Kim

M.S. (2026.02.)

Current position: 

Dongbum Seo 

M.S. (2026.02.)

Current position: 

Yewon Seo

M.S. (2026.02.)

Current position: