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Recent Publication
Recent Presentation
May 2026
Planar Integrated Electro-Pneumatic Actuator for amplified vertical protrusion
March 2026
High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity
MRS 2025
Carrier Concentration and Mobility Enhancement in Top-Gate a-IGZO TFTs via Oxygen Scavenging Nb Capping as Gate Dielectric
MRS 2024
Self-Aligned Fabrication of Sub-50 nm Top Gate Coplanar IGZO/ITO Thin-Film Transistors without Nanoscale Patterning
Patents Awarded
Research Facilities
[특허출원] "SEMICONDUCTOR MEMORY DEVICE INCLUDING CHARGE INDUCTION LAYER"
한양대학교(이승백, 선현정, 이승재), 삼성전자(이현재, 하대원)
국제특허 출원번호(미국) : 19/716,476출원일자: 2026.06.23 국내특허 출원번호 : 10-2025-0119331
출원일자: 2025.08.26
[특허등록] "캐핑층을 게이트 절연막으로 사용하는 트랜지스터"
이승백, 선현정, 윤여은, 황규빈
국내특허 등록번호 : 제 10-2943658
등록일자: 2026.03.20
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