High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs
with Oxidized Metal Gate Insulator for Enhanced Conductivity

Hyeonjeong Sun, Yeoeun Yun,  Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim,
Suhwon Choi, Eunsuk Choi, Jaekyeong Jeong and Seung-Beck Lee

Adv. Elec. Mat. 12 (2026), e70455 

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