Jeonghyeok Yoon and Hyungtak Kim, "Investigation of Temperature-Dependent Gate Degradation in Normally-Off AlGaN/GaN High-Electron-Mobility Transistor p-GaN", Electronics, Vol.14, No.9, p.1764, April, 2025

Junpyo Lee, Byoung-Gue Min, Jongmin Lee, Dongmin Kang, and Hyungtak Kim, "Analysis of Channel Thermal Resistance in AlGaN/GaN High Electron Mobility Transistors-on SiC with Different Buffer Thickness", Journal of Semiconductor Technology and Science, Vol.25, No.2, pp.160-165, April, 2025

Dong-Guk Kim, Jun-Hyeok Yim, Min-Keun Lee, Myeong-Su Chae, Hyungtak Kim and Ho-Young Cha, "P-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor with a threshold voltage of 6 V", IEEE Electron Device Letters, Vol.45, No.6, pp. 972 - 975, June, 2024

Myeongsu Chae, Ho-Young Cha and Hyungtak Kim, "Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs", IEEE Journal of the Electron Devices Society, Vol.12, pp.581 - 586, August, 2024

Junwoo Jung, Jong-Min Lee, Byoung-Gue Min, Dong Min Kang, Inho Kang, Hyungtak Kim, "Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy", Journal of Electromagnetic Engineering and Science, Vol.25, No.2, pp.184 - 189, December, 2024

Van Cuong Nguyen, Ho-Young Cha and Hyungtak Kim, "High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs", Sensors, Vol.23, No.7, p.3465, March, 2023

Myeongsu Chae and Hyungtak Kim, "Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors", Micromachines, Vol.14, No.5, p.977, April, 2023  

Myeongsu Chae and Hyungtak Kim, "Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress",
JSTS, Vol.23, No.06, pp.352 - 358, December, 2023

Won-Ho Jang, Jun-Hyeok Yim, Hyungtak Kim and Ho-Young Cha, "Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process", Electronics, Vol.12, No.7, p.1667, March, 2023

Hyeon-Ji Kim, Jun-Hyeok Yim, Hyungtak Kim and Ho-Young Cha, "Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication", Electronics, Vol.12, No.20, p. 4347, October, 2023

 Seongin Cho, Wonho Jang, Ho-Young Cha and Hyungtak Kim, "Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs" Journal of Electromagnetic Engineering and Science, Vol.22, No.3, pp.291~295, May, 2022 

 Chanhee Jang, Hyunseop Kim, Hyungtak Kim and Ho-Young Cha, "Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films" Materials, Vol.15, No.6, p.2097, March, 2022

 June-Heang Choi, Hyungtak Kim and Ho-Yuoung Cha, "Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode", IEEE sensors journal, Vol.21, No.2, pp.1244-1249, January, 2021 

 Van Cuong Nguyen, Kwangeun Kim and Hyungtak Kim, "Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation", Micromachines, Vol.12, No.4, p.400, April, 2021

 Kwangeun Kim, Jaewon Jang, Hyungtak Kim, "Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method", Results in Physics, Vol.25, p.104279, May, 2021 

 Tuan-Anh Vuong, Ho-Young Cha, Hyungtak Kim, "Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature", Micromachines, Vol.12, No.5, p.537, May, 2021 

 Van Cuong Nguyen, Ho-Young Cha, Hyungtak Kim, "Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 C", JSTS, Vol.21, No.06, pp.412 - 417, December, 2021 

 Van Cuong Nguyen and Hyungtak Kim, "High Performance NO2 Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier", Journal of Semiconductor Technology and Science, Vol.20, No.2, pp.170-176, April, 2020 

Bikramjit Chatterjee, Daniel Shoemaker, Yiwen Song, Tan Shi, Hsien-Lien Huang, Dongmin Keum, Anusha Krishnan, Brian M. Foley, Igor Jovanovic, Jinwoo Hwang, Hyungtak Kim, and Sukwon Choi, "Cumulative Impacts of Proton Irradiation on the Self-heating of AlGaN/GaN HEMTs", ACS Applied Electronic Materials, Vol.2, No.4, pp.980-991, March, 2020 

James Spencer Lundh, Yiwen Song, Bikramjit Chatterjee, Albert G. Baca, Robert J. Kaplar, Andrew M. Armstrong, Andrew A. Allerman, Brianna A. Klein, Dustin Kendig, Hyungtak Kim, Sukwon Choi , "Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics", Jounal of Electronic Packaging, Vol.142, No.3, p.031113 ,May, 2020  

Bikramjit Chatterjee, Canberk Dundar, Thomas E. Beechem, Eric Heller, Dustin Kendig, Hyungtak Kim, Nazli Donmezer, Sukwon Choi, "Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, Vol.127, No.4, p.044502, January, 2020  

 June-Heang Choi, Tuan Anh Vuong, Hyungtak Kim and Ho-Young Cha, "High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor", Journal of Nanoscience and Nanotechnology, Vol.20, No.7, pp.4404-4408, July, 2020

Hyun-Seop Kim, Myoung-Jin Kang, Won-Ho Jang, Kwang-Seok Seo, Hyungtak Kim, Ho-Young Cha, "PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier", Solid State Electronics, Vol.173, p.107876, November, 2020 

 June-Heang Choi, Hyungtak Kim and Ho-Young Cha, "Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation", Journal of semiconductor technology and science, Vol.20, No.5, pp.430-435, October, 2020 

 June-Heang Choi, Hyungtak Kim, Hyuk-Kee Sung, and Ho-Young Cha, " Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions", Sensors, Vol.19, No.24, p.5549, December, 2019  

 Geunho Cho, Ho-young Cha, and Hyungtak Kim, " Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator", Materials, Vol.12, No.23, p.3968, November, 2019 

 Dongmin Keum, Hyungtak Kim, " Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors", Micromachines, Vol.10, No.11, p.723, October, 2019 

 Dongmin Keum, Hyungtak Kim, "Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs", Journal of Semiconductor Technology and Science, Vol.19, No.2, pp.214-219, April, 2019

 GuHyeok Chung, Tuan Anh Vuong, Hyungtak Kim, "Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment", Results in Physics, Vol.12, pp.83-84, March, 2019 

 Hyun-Seop Kim, Su-Kuen Eom, Kwang-Seok Seo, Hyungtak Kim, Ho-Young Cha, "Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOSHFETs with PECVD SiO2 gate oxide", Vacuum, Vol.155, pp.428-433, September, 2018  

 Dongmin Keum and Hyungtak Kim, "Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation", ECS Journal of Solid State Science and Technology, Vol.7, No.9, pp.159-163, August, 2018 

 Dongmin Keum, Hyungtak Kim, "Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs", Cryogenics, Vol.93, pp. 51-55, July, 2018 

 GuHyeok Chung, Ho-Young Cha, Hyungtak Kim, "Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer", Electronics Letters, Vol.54, No.14, pp.896-897, July, 2018 

 Seunggyu Ji, Hyungtak Kim, and Il Hwan Cho, "Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability", Journal of Semiconductor Technology and Science, Vol.18, No.3, pp.360-366, June, 2018 

 Jong-Ik Kang, Hyuk-Kee Sung, Hyungtak Kim, Eugene Chong, Ho-Young Cha, "Diode quenching for Geiger mode avalanche photodiode", IEICE Electrinics Express, Vol.15, No.9, pp.20180062-20180062, April, 2018  

 Hyun-Seop Kim, Won-Ho Jang, Su-Keun Eom, Sang-Woo Han, Hyungtak Kim, Kwang-Seok Seo, Chun-Hyung Cho, and Ho-Young Cha, "Effects of PECVD SiO2 Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs", Journal of Semiconductor Technology and Science, Vol.18, No.2, pp. 187-192, April, 2018 

 Jong-Ik Kang, Hyungtak Kim, Chang-Yeol Han, Heesun Yang, Seong Ran Jeon, Byeonghwang Park, and Ho-Young Cha, "Enhanced UV Absorption of GaN Photodiodes with a ZnO Quantum Dot Coating Layer",  Optics Express, Vol.26, No.7,  pp.8296-8300, March, 2018

 Geunho Cho, Ho-young Cha, and Hyungtak Kim , "Parastic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs",  Journal of Semiconductor Technology and Science, Vol.18, No.1,  pp.78-83, February, 2018  

Jae-Gil Lee, Dong-Hwan Kim, Su-Keun Eom, Seung-Hyun Roh, Kwang-Seok Seo, Hyun-Seop Kim, Hyungtak Kim, Ho-Young Cha & Young-Chul Byun, "Improved Interface Characteristics of Mo/SiO2/4H-SiC Metal-Oxide-Semiconductor with Post-Metallization Annealing", Journal of the Korea Physical Society, Vol.72, No.1,  pp.166-170, January, 2018 

 Dongmin Keum, Geunho Cho, Hyungtak Kim, "Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation",  ECS Journal of Solid State Science and Technology, Vol.6, No.11, pp.S3030-S3033, August, 2017   

 June-Heang Choi, Min-Gi Jo, Sang-Woo Han, Hyungtak Kim, Seung-Hwan Kim, Soohwan Jang, Jung-Sik Kim, Ho-Young Cha, "Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption", Electronics Letters, Vol.53, No.17, pp.1200-1202, August, 2017 

 Sang-Woo Han, Min-Gi Jo, Hyungtak Kim, Chun-Hyung Cho, Ho-Young Cha, "AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster", Solid-State Electronics, Vol.134, pp.30-38, August, 2017 

 Jun-Hyung Cho, Hyungtak Kim, Hyuk-Kee Sung, "Performance optimization of an optically combined dual-loop optoelectronic oscillator based on optical interference analysis", Optical Engineering, Vol.56, No.6, pp. 066111-1-066111-6, June, 2017 

 Hyun-Seop Kim, Won-Ho Jang, Sang-Woo Han, Hyungtak Kim, Chun-Hyung Cho, Jungwoo Oh, and Ho-Young Cha, "AlGaN/GaN-on-Si Power FET with Mo/Au Gate", Journal of Semiconductor Technology and Science, Vol.17, No.2, pp.204-209, April, 2017

 Dongmin Keum, Hyuk-kee Sung, and Hyungtak Kim, "Degradation Characteristics of Normally-off p-AlGaN gate AlGaN/GaN HEMTs with 5 MeV Proton Irradiation", IEEE Transactions on Nuclear Science, Vol.64, No.1, pp.258-262, January, 2017   

 Hyungtak Kim, Youngjin Kang, and Hyuk-Kee Sung, "Investigation of Kink Effect in Normally-off AlGaN/GaN Recessed-gate MOS-Heterosturcture FETs", Journal of Vacuum Science Technology B, Vol.34, No.5, 052202-1-052202-4, September, 2016   

 Sung-Hoon Park, Jae-Gil Lee, Chun-Hyung Cho, Yearn-Ik Choi, Hyungtak Kim, and Ho-Young Cha,  "Diode Embedded AlGaN/GaN Heterojunction Field-Effect Transistor", Journal of Semiconductor Technology and Science, Vol.16, No.2, pp. 215-220, April, 2016 

 Dongmin Keum, Geunho Cho, and Hyungtak Kim, "Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier", Electronics Letters, Vol.52, No.8, pp. 661-663, April, 2016 

 Dongmin Keum, Ho-young Cha, and Hyungtak Kim, "Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs", IEEE Transactions on Nuclear Science, Vol.62, No.6, pp.3362-3368, December, 2015  

 Sungju Choi, Youngjin Kang, Jonghwa Kim, Jungmok Kim, Sung-Jin Choi, Dongmyong Kim, Ho-Young Cha, Hyungtak Kim and Daehwan Kim, "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors", Journal of Semiconductor Technology and Science, Vol.15, No.5, pp.497-502, October, 2015 

 Jun-Hyung Cho, Hyungtak Kim, and Hyuk-Kee Sung, "Reduction of Spurious Tones and Phase Noise in Dual-Loop OEO by Loop-Gain Control", IEEE Photonics Technology Letters, Vol.27, No.13, pp.1391-1393, July, 2015  

 Youngjin Kang, Sungju Choi, Ho-Young Cha, Hyungtak Kim and Daehwan Kim, "Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs", Journal of the Korean Physical Society, Vol.66, No.8, pp.1291-1294, April, 2015 

 Jung-Yeon Lee, Bong-Ryeol Park, Hyungtak Kim, Jeahan Kim and Ho-Young Cha. "AlGaN/GaN MOSHFET power switching transistor  with embedded fast recovery diode", Electon. Mater. Lett., Vol.10, No.6, pp.1115-1120, November, 2014 

 Dongmin Keum, Shinhyuk Choi, Youngjin Kang, Jae-Gil Lee, Ho-Young Cha and Hyungtak Kim, "Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors", Journal of Semiconductor Technology and Science, Vol.14, No.5, pp.682-687, October, 2014  

 Sinhyuk Choi, Jae-Gil Lee, Youngjin Kang, Ho-Young Cha, Hyungtak Kim and Chun-Hyung Cho, "Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field effect transistors", Journal of Korean Physical Society, Vol.64, No.4, pp.526-531, September, 2014  

 Sinhyuk Choi, Jae-Gil Lee, Ho-Young Cha and Hyungtak Kim, "Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress", Journal of the Korean Physical Society, Vol.63, No.6, pp.1208-1212, October, 2013  

 Sinhyuk Choi, Jae-Gil Lee, Ho-Young Cha and Hyungtak Kim, "Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs", Journal of Korean Physical Society, Vol.62, No.6, pp.954-958, April, 2013 

 Jae-Gil Lee, Sinhyuk Choi, Bong-Ryeol Park, Kwang-Seok Seo, Hyungtak Kim and Ho-Young Cha, "Nonvolatile Memory Devices Based on SiO2/GaN/AlGaN/GaN heterostructure", Electronic Letters, Vol.49, No.8, pp.529-531, April, 2013 

 Bong-Ryeol Park, Jae-Gil Lee, Woojin Choi, Hyungtak Kim, Kwang-Seok Seo and Ho-Young Cha, "High Quality ICPCVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOSHFETs", IEEE Electron Device Letter, Vol.34, No.3, pp.354-356, March, 2013 

 Hoonsang Yoon, Hyuk-kee Sung and Hyungtak Kim, "Field-induced Degradation of Organic Field-effect Transistors under Vacuum Condition", Journal of the Korean Physical Society, Vol.62, No.3, pp.536-540, February, 2013   

 Yongsik Kim, Minkyung Bae, Woojoon Kim. Dongsik Kong, Hyunkwang Jung, Hyungtak Kim, Sunwoong Kim, Dongmyong Kim and Daehwan Kim, "Amorphous InGaZnO Thin-Film Transistors:Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range", IEEE Transactions on Electron Devices, Vol.59, No.10, pp.2689-2698, October, 2012  

 Hoonsang Yoon and Hyungtak Kim, "Optimization of field-plate AlGaN/GaN HFETs for high-voltage and high-frequency operation", Journal of the Korean Physical Society, Vol.60, No.1, pp.113-117, January, 2012

 Hyungtak Kim, Jongtae Lim, and Ho-Young Cha, "DC Characteristics of Wide Bandgap Semiconductor Feild Effect Transistors at Cryogenic Temperatures", Journal of Korean Physical Society, Vol. 56, No. 5, pp. 1523-1526, May, 2010

 Ho-Young Cha, Hyuk-Kee Sung, Hyungtak Kim, Chun-Hyung Cho, and Peter Micah Sandvik, "4H-SiC Avalanche Photodiodes for 280nm UV Detection", IEICE Transactions on Electronics, Vol. E93.C, No. 5, pp. 648-650, May, 2010

 Dongwook Kim, In-Sun Cho, Jinyoung Kim, Haelin Jang, Gillsang Han, Hyunseung Jung, Hyungtak Kim, and Kugsun Hong, "Simple Large-Scale Synthesis of Hydroxyapatite Nanoparticles: In Situ Observation of Crystallization Process", Langmuir, Vol.26, No.1, pp.384-388, October, 2009

 Hyunsuk Jung and Hyungtak Kim, "Origin of Low Photocatalytic Activity of Rutile TiO2", Electronic Materals Letters, Vol.5, No.2, pp.73-76, June, 2009

 Hyungtak Kim and Lester F. Eastman, "High-electric-field Induced Trap Generation in AlGaN/GaN Heterostructure Field effect Transistors", Journal of The Korean Physical Society, Vol.55, No.2, pp.666-670, August, 2009

 Lester F. Eastman, Vinayak Tilak, Richard M. Thompson, B. Green, Valery Kaper, Thomas R. Prunty, James R. Shealy, Joseph A. Smart, and Hyungtak Kim, "High power AlGaN/GaN HEMT`s", Compound Semiconductors 2002, Vol.174, pp.227-230, September, 2003

 Valery Kaper, Vinayak Tilak, Hyungtak Kim, Alexei V. Vertiatchikh, Richard M. Thompson, Thomas R. Prunty, Lester F. Eastman, and J. R. Shealy, "High-power monolithic AlGaN/GaN HEMT oscillator", IEEE Journal of Solid-state Circuits, Vol.38, No.9, pp.1457-1461, September, 2003

 Hyungtak Kim, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, and Lester F. Eastman, "Effects of SiN passivation and high-electric field on AlGaN/GaN HFET degradation", IEEE Electron Device Letters, Vol.24, No.7, pp.421-423, July, 2003

 Hyungtak Kim, A. Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, and Lester F. Eastman, "Hot electron induced degradation of undoped AlGaN/GaN HFETs", Microelectronics Reliability, Vol.43, No.6, pp.823-827, June, 2003

 G. Koley, Hyungtak Kim, Lester F. Eastman, and M. G. Spencer, "Electrical bias stress related degradation of AlGaN/GaN HEMTs",  Electronics Letters, Vol.39, No.16, pp.1217-1218, 2003

 Deepak Kumar Sahoo, Rakesh K. Lal, Hyungtak Kim, Vinayak Tilak, and Lester F. Eastman, "High-field effects in sillicon nitride passivated GaN MODFETs", IEEE Ttansactions on Electron Devices, Vol.50, No.5, pp.1163-1170, May, 2003

 Vinayak Tilak, Valery Kaper, Richard M. Thompson, Thomas R. Prunty, Hyungtak Kim, Joseph A. Smart, James R. Shealy, and Lester F. Eastman, "Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs", Compound Semiconductors 2002, Vol.174, pp.287-290, September, 2003

 Lester F. Eastman, Vinayak Tilak, Joseph A. Smart, Bruce M. Green, A. Vertiatchikh, N. Weimann, Oliver S. Ambacher, E. Chumbes, Hyungtak Kim, Thomas R. Prunty, J. H. Hwang, W. J. Schaff, B. K. Ridley, and J. R. Shealy, and V. Kaper, "Progress in nitride-based microwave HEMTs", Compound Semiconductors 2001, No.170, pp.1-9, 2002

 Lester F. Eastman, Vinayak Tilak, Joseph A. Smart, Bruce M. Green, Eduardo M. Chumbes, Roman Dimitrov, Hyungtak Kim, Oliver S. Ambacher, N. Weimann, Thomas R. Prunty, Michael Murphy, William J. Schaff, and James R. Shealy", Undoped AlGaN/GaN HEMTs for microwave power amplification", IEEE Transactions on Electron Devices, Vol.48, No.3, pp.479-485, March, 2001

 Bruce M. Green, Vinayak Tilak, Sungjae Lee, Hyungtak Kim, Joseph A. Smart, Kevin J. Webb, James R. Shealy, and Lester F. Eastman, "High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates",  IEEE Transactions on Microwave Theory and Techniques, Vol.49, No.12, pp.2486-2493, December, 2001

 Hyungtak Kim, Vinayak Tilak, Bruce M. Green, Joseph A. Smart, W. J. Schaff, James R. Shealy, and Lester F. Eastman, "Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate",  Physica Status Soldi a-applied Research, Vol.188, No.1, pp.203-206,  August, 2001

 Vinayak Tilak, Bruce M. Green, Valery Kaper, Hyungtak Kim, Thomas R. Prunty, Joseph A. Smart, and James R. Shealy, and Lester F. Eastman, "Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs", IEEE Electron Device Letters, Vol.22, No.11, pp.504-506, November, 2001

 Roman Dimitrov, Vinayak Tilak, Wesley Yeo, Bruce M. Green, Hyungtak Kim, Joseph A. Smart, Eduardo Martin Chumbes, James R. Shealy, William J. Schaff, Lester F. Eastman, Claudio R. Miskys, Oliver S. Ambacher, and Martin Stutzmann, "Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors", Solid-state Electronics, Vol.44, No.8, pp.1361-1365, August, 2000

 Bruce M. Green, Kenneth K. Chu, Joseph A. Smart, Vinayak Tilak, Hyungtak Kim, James R. Shealy, and Lester F. Eastman, "Cascode connected AlGaN/GaN HEMT's on SiC substrates", IEEE Microwave and Guided Wave Letters, Vol.10, No.8, pp.316-318, August, 2000