Conference Presentations/Proceedings

1. Eunah Ko, Changhoon Lee, and Changhwan Shin, “Critical Scaling Limit of Sub-100nm Positive Feedback Field Effect Transistor”, Nano Convergence Conference 2018, January, 2018, South Korea (poster)

2. Jaemin Shin and Changhwan Shin, “Negative Differential Resistance Field Effect Transistor Using Variation-Immune Pb(Zr0.52Ti0.48)O3 Threshold Selector”, Nano Convergence Conference 2018, January, 2018, South Korea (poster)

3. Hyungki Cho and Changhwan Shin, “Comparative Study of Negative Differential FET: Single Layer versus Double Layer”, Nano Convergence Conference 2018, January, 2018, South Korea (poster)

4. Eunah Ko and Changhwan Shin, “Steep Slope Silicon-on-Insulator FET with Negative Capacitance”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (poster)

5. Hansol Ku and Changhwan Shin, “Transient Response of Polarization Switching in PZT Ferroelectric Capacitor”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (oral)

6. Hyungki Cho, Jaemin Shin and Changhwan Shin, “Impact of Ferroelectric Capacitor’s Electrode Area on the Performance of Negative (Differential) Capacitance Field Effect Transistor”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (oral)

7. Jeongmin Shin, Hansol Ku and Changhwan Shin, “Impact of Remnant Polarization and Coercive Field on the Transient Response of Ferroelectric/Negative Capacitor”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (poster)

8. Jaesoo Park, Sungjin Lee and Changhwan Shin, “Segmented-Channel Tunnel Field Effect Transistor for Bi-Directional Current flow”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (oral)

9. Kihun Choe, Wonseok Lee and Changhwan Shin, “Use of Negative Capacitance to Lower the Switching Voltage of Nanoelectromechanical Relay”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (oral)

10. Jinyoung Park and Changhwan Shin, “Statistical Process-Induced Random Variation: Work-Function in Stacked Nanowire FET”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (oral)

11. Changhoon Lee, Jinhong Min and Changhwan Shin, “Steep Slope Silicon-On-Insulator Feedback Field Effect Transistor”, The 25th Korean Conference on Semiconductors, February, 2018, South Korea (oral)

12. Hyungki Cho and Changhwan Shin, “Design optimization of steep switching FinFET with MFMIS gate stack”, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2018, July, 2018, Japan (oral)

13. Changhoon Lee and Changhwan Shin, “Steep slope silicon-on-insulator feedback field effect transistor”, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2018, July, 2018, Japan (oral)

14. Kihun Choe and Changhwan Shin, “Nanoelectromechanical Non-Volatile Memory Cell using Negative Capacitance”, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2018, July, 2018, Japan (poster)

15. Jaemin Shin and Changhwan Shin, “Effects of Baseline Transistor on the Input Characteristics of Phase FET with Pb(Zr0.52Ti0.48)O3 threshold selector”, Nano Korea 2018, July, 2018, South Korea (poster)

16. Changhoon Lee and Changhwan Shin, “Study of Random Dopant Fluctuations Effects in PNPN Feedback FET”, Nano Convergence Conference 2019, January, 2019, South Korea (poster)

17. Changhoon Lee and Changhwan Shin, “Various Device Structures for Steep Switching Silicon-On-Insulator Feedback Field Effect Transistor”, International Conference on Electronics, Information and Communication 2019, January, 2019, New Zealand (poster)

18. Seungjun Moon and Changhwan Shin, “Experimental Study Of Negative Capacitance FinFET Device”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (poster)

19. Jinhong Min and Changhwan Shin, “Effect of Process-Induced Line Edge Roughness on Performance of Gate-All-Around FET”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (oral)

20. Changhoon Lee and Changhwan Shin, “Study of the Reverse Sweep Operation of Positive Feedback Field Effect Transistor”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (oral)

21. Chankeun Yoon and Changhwan Shin, “Impact of Ferroelectric Polarization Swtiching on FD-SOI Device”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (oral)

22. Jaemin Shin, Eunah Ko and Changhwan Shin, “Experimental Investigation on Drain-Induced-Barrier-Lowering in Hysteresis-Free Ferroelectric-Gated FinFET”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (oral)

23. Jaesoo Park and Changhwan Shin, “Study of Random Dopant Fluctuations Effects in PNPN Feedback FET”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (oral)

24. Kihun Choe and Changhwan Shin, “Theoretical Study for Ferroelectric-Gated Nano-Electro-Mechanical Diode Non-Volatile Memory Cell”, The 26th Korean Conference on Semiconductors, February, 2019, South Korea (oral)

25. Changhwan Shin, “Super Steep Switching CMOS Device Technology”, China Semiconductor Technology International Conference (CSTIC) 2019, March 2019, China (초청 강연)

26. Seungjun Moon and Changhwan Shin, “Ferroelectric Behaviour and Electron Trapping Effect in Negative Capacitance FinFET”, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), July, 2019, South Korea (poster)

27. Jinhong Min and Changhwan Shin, “Understanding of Transient Response in Resistor-Ferroelectric Capacitor (RC) Circuit”, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), July, 2019, South Korea (oral)

28. Chankeun Yoon and Changhwan Shin, “Time-Dependent Electrical Characteristics of Ferroelectric-Gated Fully Depleted Silicon On Insulator Devices”, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), July, 2019, South Korea (poster)

29. Changhoon Lee and Changhwan Shin, “Inverter design with positive feedback field effect transistor”, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), July, 2019, South Korea (poster)

30. Kihun Choe and Changhwan Shin, “Impact of Ferroelectric Capacitor on Nanoelectromechanical Nonvolatile Memory Cell with the Function of Diode”, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), July, 2019, South Korea (poster)

31. Jaesoo Park and Changhwan Shin, “Study of Random Dopant Fluctuation in PNPN Feedback FET”, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), July, 2019, South Korea (poster)

32. Jinhong Min and Changhwan Shin, “Negative Capacitance FinFET Design Optimization toward the End of Roadmap for Power Supply Voltage”, NANO KOREA 2019, July, 2019, South Korea (oral)

33. Ji-ho Seo and Changhwan Shin, “Experimental Study of Negative Capacitance Field Effect Transistor (NCFET) with Double-Layered Ferroelectric HfO2 insulator”, NANO KOREA 2019, July, 2019, South Korea (poster)

34. Sangho Yu and Changhwan Shin, “Golden combination of LER (line-edge-roughness) characterization factors for designing variation-immune gate-all-around field effect transistor”, NANO KOREA 2019, July, 2019, South Korea (poster)

35. Hanyeong Yu and Changhwan Shin, “Performance evaluation of nanoelectromechanical nonvolatile memory cell with ferroelectric capacitor”, NANO KOREA 2019, July, 2019, South Korea (poster)

36. Changhoon Lee and Changhwan Shin, “Statistical inference and forecast of device performance using the process parameters for line edge roughness”, NANO KOREA 2019, July, 2019, South Korea (poster)

37. Yejoo Choi and Changhwan Shin, “Simulation study for gate-all-around nanowire negative capacitance FET with HfO2-based ferroelectric gate stack”, NANO KOREA 2019, July, 2019, South Korea (poster)

38. Yuri Hong and Changhwan Shin, “Analysis for work function variation in cylindrical gate-all-around (GAA) n-type vertical nanowire tunnel field effect transistor (TFET)”, NANO KOREA 2019, July, 2019, South Korea (poster)

39. Changhoon Lee and Changhwan Shin, “Inverter with positive feedback field effect transistor”, International Conference on Electronics, Information and Communication 2020, January, 2020, Spain (poster)

40. JiHo Seo and Changhwan Shin, “Experimental analysis of MOS capacitor with Al-doped HfO2 insulation layer”, Nano Convergence Conference 2020, January, 2020, South Korea (poster)

41. Junehan Lee and Changhwan Shin, “DFT-NEGF simulation to study the impact of interface trap charge in junction-less nanowire transistor”, Nano Convergence Conference 2020, January, 2020, South Korea (poster)

42. Jinwoong Lee and Changhwan Shin, “Prediction model for estimating line-edge-roughness (LER)-induced variation in MOSFET”, Nano Convergence Conference 2020, January, 2020, South Korea (poster)

43. Jaehyuk Lim and Changhwan Shin, “Machine learning technique to time-efficiently estimate the Line-Edge-Roughness (LER)-induced random variation in FinFET”, Nano Convergence Conference 2020, January, 2020, South Korea (poster)

44. Changhoon Lee and Changhwan Shin, “Digital Inverter with Positive Feedback Field Effect Transistor”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (oral)

45. Yuri Hong and Changhwan Shin, “Sensitivity Analysis of NCFET-based 6-T SRAM”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (oral)

46. Seungjoon Moon and Changhwan Shin, “Investigation of Interface Trap Density by Low Frequency Noise and Subthreshold Slope”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

47. Chankeun Yoon and Changhwan Shin, “Energy-Delay Sensitivity Analysis of NEM Relay Using Negative Capacitance”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

48. Gwon kim, Changhoon Lee and Changhwan Shin, “FBFET-based Ring Oscillators for Neuromorphic Computing”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

49. Sangho Yu and Changhwan Shin, “Regression Model for investigating the impact of line-edge-roughness (LER)”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

50. Shinick Han and Changhwan Shin, “Machine-Learning model for predicting the effect of line edge roughness on device performance”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

51. Taegeon Kim and Changhwan Shin, “Observation of negative capacitance effect by phase field simulation”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

52. Yejoo Choi and Changhwan Shin, “Analysis of negative capacitance gate-all-around junctionless nanowire FET considering work function variation”, The 27th Korean Conference on Semiconductors, February, 2020, South Korea (poster)

53. Seungjoon Moon and Changhwan Shin, “Experimental study on the electrical characteristics of ferroelectric-gated FinFET”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

54. Seungjoon Moon and Changhwan Shin, “Experimental investigation on time-resolved electrical characteristic in ferroelectric-gated FinFET”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

55. Taegeon Kim and Changhwan Shin, “Characteristic analysis of single SiOx layer ReRAM devices with thermal annealing and partial pressure”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

56. Sangho Yu and Changhwan Shin, “Investigating the impact of line-edge-roughness (LER) on off-current distribution for FinFET device”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

57. Sangho Yu and Changhwan Shin, “Impact of work-function variation on the performance of silicon-on-insulator feedback field-effect transistor”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (oral)

58. Juho Sung and Changhwan Shin, “Steep Slope Nanowire Feedback Field Effect Transistor”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

59. Juho Sung and Changhwan Shin, “Steep Slope Silicon-on-insulator Dual-gated Feedback Field Effect Transistor”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

60. Jinwoong Lee and Changhwan Shin, “Prediction model for estimating the effect of line-edge-roughness (LER) on device performance”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

61. JiHo Seo and Changhwan Shin, “Analysis on interface trap density of MOS capacitor with Al-doped HfO2 insulation layer”, 제58회 한국진공학회 동계정기학술대회, February, 2020, South Korea (poster)

62. Yuri Hong and Changhwan Shin, “Yield estimation of NCFET-based 6-T SRAM”, IEEE Electron Devices Technology and Manufacturing (EDTM) conference, March, 2020, Malaysia (Oral)

63. Taegeon Kim and Changhwan Shin, “3D Phase-Field simulation of Ferroelectric switching”, NANO KOREA 2020, July, 2020, South Korea (poster)

64. Jongseok Woo and Changhwan Shin, “Impact of annealing conditions on the resistive switching characteristics of TiN/HfO2:Al/Si ReRAM devices”, NANO KOREA 2020, July, 2020, South Korea (poster)

65. Sangwoo Han, Sojin Jeong and Changhwan Shin, “Characterization of HfO2/Al2O3 threshold switching device”, NANO KOREA 2020, July, 2020, South Korea (poster)

66. Sojin Jeong, Sangwoo Han, and Changhwan Shin, “Impact of bottom electrode’s work function on the characteristics of threshold switching device”, Nano Convergence Conference 2020, July 2020, South Korea (poster)

67. JiHo Seo and Changhwan Shin, “A study of interface traps of Zr doped HfO2 thin film in M etal Insulator Semiconductor MIS structure”, 대한전자공학회 하계학술대회, August 2020, South Korea (poster)

68. Woo-Chul Jeon, Byeong-Hun Lee, Geon-Hee Kim, Yuri Hong, and Changhwan Shin, “Design of FinFET-based 6-T SRAM and Performance Evaluation of Read/Write in Large-scale Memory Array”, 대한전자공학회 하계학술대회, August 2020, South Korea (poster)

69. Jaehyuk Lim and Changhwan Shin, “Comparative Analysis of Process Induced Random Variation in Nanowire FET and Nanosheet FET”, 대한전자공학회 하계학술대회, August 2020, South Korea (poster)

70. Taegeon Kim and Changhwan Shin, “강유전 커패시터의 3차원 Phase-Field 시뮬레이션”, 대한전자공학회 하계학술대회, August 2020, South Korea (poster)

71. Sangho Yu and Changhwan Shin, “FinFET 내 Line Edge Roughness의 영향을 예측하기 위한 다양한 선형 회귀 모델”, 대한전자공학회 하계학술대회, August 2020, South Korea (oral)

72. Sangho Yu and Changhwan Shin, “FinFET의 Line Edge Roughness Immunity 평가를 위한 베이지안 선형회귀 방법에 대한 고찰”, 대한전자공학회 하계학술대회, August 2020, South Korea (poster)

73. Jinwoong Lee and Changhwan Shin, “Line-Edge-Roughness (LER)에 의한 5 nm FinFET의 문턱전압 변화 예측을 위한 인공신경망 모델”, 대한전자공학회 하계학술대회, August 2020, South Korea (oral)

74. Gwon Kim and Changhwan Shin, “Negative Capacitance 현상을 확인하기 위한 Metal-Ferroelectric-Insulator-Metal 소자 분석 연구”, 대한전자공학회 하계학술대회, August 2020, South Korea (oral)

75. Taehwan Jung, Barry O’Sullivan, Nicolò Ronchi, Dimitri Linten, Changhwan Shin, Jan Van Houdt, “Impact of interface layer on charge trapping in Si:HfO2 based FeFET“, IEEE international integrated reliability workshop (IIRW), October 2020, United States (oral)

76. Sangwoo Han and Changhwan Shin, “Investigation of Ag Dual Oxide based Threshold Switching Device with High Selectivity”, 대한전자공학회 추계학술대회, November 2020, South Korea (oral)

77. Gwon Kim and Changhwan Shin, “Experimental study of boosting effect in metal-ferroelectric-metal capacitor”, 제28회 한국반도체학술대회 (KCS 2021), January 2021, South Korea (oral)

78. Gwon Kim and Changhwan Shin, “Study of boosting effect in metal-insulator-ferroelectric-metal capacitor”, Nano Convergence Conference 2021, January 2021, South Korea (oral)

79. Sojin Jeong and Changhwan Shin, “Impact of Using HfO2/Al2O3 Multilayer on the Performance of Threshold Switching Device”, 제28회 한국반도체학술대회 (KCS 2021), January 2021, South Korea (oral)

80. Gisu Youm and Changhwan Shin, “Single Transistor Latch Using Fully-Depleted Silicon-On-Insulator Device”, 제28회 한국반도체학술대회 (KCS 2021), January 2021, South Korea (oral)

81. Jinwoong Lee and Changhwan Shin, “A New Approach to Estimate the process-induced Random Variation in current-voltage Characteristic of FinFET:Machine-Learning Technique”, 제28회 한국반도체학술대회 (KCS 2021), January 2021, South Korea (oral)

82. Changwoo Han and Changhwan Shin, “Conventional/large-scale operation metrics to do comprehensive analysis on 8T-SRAM bit cells”, NANO KOREA 2021, July 2021, South Korea (oral)

83. Gisu Youm and Changhwan Shin, “Effects of Rapid Thermal Annealing on Pt/Ag/HfO2/Pt Threshold Switching Device”, NANO KOREA 2021, July 2021, South Korea (oral)

84. Gwon Kim and Changhwan Shin, “Experimental verification on charge-boosting effect in metal-ferroelectric-metal capacitor”, NANO KOREA 2021, July 2021, South Korea (oral)

85. Yejoo Choi, Seungjun Moon, Jaemin Shin and Changhwan Shin, “The impact of body biasing on externally-connected Al:HfO2-based ferroelectric field effect transistor”, 2021 MRS, April 2021, United States (poster)

86. Changhwan Shin, “CMOS Device Design with Ferroelectric Materials”, 2021 China Semiconductor Technology International Conference (CSTIC), March 2021, United States (초청강연)

87. Gwon Kim, Gisu Youm and Changhwan Shin, “Experimental study of negative differential transconductance by the domain switching in ferroelectric material”, Nano Convergence Conference 2022, January 2022, South Korea (poster)

88. Gisu Youm and Changhwan Shin, “An Ag/HfO2 Based-Threshold Switching Device with Stable DC and AC Characteristics”, Nano Convergence Conference 2022, January 2022, South Korea (poster)

89. Changwoo Han and Changhwan Shin, “Analysis of large-scale read/write performance in a negative capacitance FET-based 8-T SRAM”, Nano Convergence Conference 2022, January 2022, South Korea (poster)

90. Juho Sung and Changhwan Shin, “Understanding of Carriers’ Kinetic Energy in Steep-Slope Feedback Field Effect Transistor”, Nano Convergence Conference 2022, January 2022, South Korea (oral)

91. Gwon Kim, Gisu Youm and Changhwan Shin, “"Experimental Observation of Negative Differential Transconductance in MOSFET + Ferroelectric Capacitor", 제29회 한국반도체학술대회 (KCS 2022), January 2022, South Korea (oral)

92. Hyeonjung Park and Changhwan Shin, “"Experimental study of the impact of Hf0.5Zr0.5O2 film deposition temperature on endurance characteristics", 제29회 한국반도체학술대회 (KCS 2022), January 2022, South Korea (oral)

93. Juho Sung and Changhwan Shin, “Device design of ferroelectric-gated feedback field effect transistor with 4 states”, 제29회 한국반도체학술대회 (KCS 2022), January 2022, South Korea (oral)

94. Sungsoo Lee and Changhwan Shin, “Multi-valued logic device using multiple-sheets field effect transistor”, 제29회 한국반도체학술대회 (KCS 2022), January 2022, South Korea (oral)

95. Gisu Youm and Changhwan Shin, “MoS2 Thin-Film Transistor with the Gate Stack of Metal-Ferroelectric (Hf0.5Zr0.5O)-Insulator (Al2O3)”, 제29회 한국반도체학술대회 (KCS 2022), January 2022, South Korea (oral)

96. Gwon Kim and Changhwan Shin, "Effect of reverse switching on charge boost in metal–ferroelectric–metal and metal–insulator–ferroelectric–metal capacitors", NANO KOREA 2022, July 2022, South Korea (oral)

97.  Jaehyuk Lim and Changhwan Shin, "Impacts of mechanical stress engineering on feedback field effect transistor", NANO KOREA 2022, July 2022, South Korea (oral)

98. Juho Sung and Changhwan Shin, "Design Optimization of Vertical N+ pocket p-n-p-n Tunnel Field-Effect Transistor with Double Metal-Gate Layers", NANO KOREA 2022, July 2022, South Korea (oral)

99. Juho Sung and Changhwan Shin, "Sub-60-mV/decade Switching ZnO Hyper-FET Integrated With Ag/HfO2/Ti/Pt-Based Threshold Switching Device", 제30회 한국반도체학술대회 (KCS 2023), February 2023, South Korea (oral)

100. Sanghyun Kang and Changhwan Shin, "Steep-switching Phase-transition FET with Ag/HfO2-Based Threshold Switching Device", 제30회 한국반도체학술대회 (KCS 2023), February 2023, South Korea (oral)