BOOK CHAPTERS

[BC5] Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, "Delta-Doped Transistors with β-Ga2O3", Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications, 11-1-11-30, 2023. Editors: James S. Speck and Esmat Farzana

[BC4] Yuewei Zhang, Sriram Krishnamoorthy, Siddharth Rajan,” β-(AlxGa1-x)2O3/Ga2O3 modulation-doped field effect transistors”, Gallium Oxide: Crystal Growth, Materials Properties, and Devices, Springer 2020; Editor: Masataka Higashiwaki

[BC3] Zhichao Yang, Digbijoy N Nath, Yuewei Zhang, Sriram Krishnamoorthy, Jacob Khurgin, Siddharth Rajan, “III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)”, In: Fay P., Jena D., Maki P. (eds) High-frequency GaN Electronic Devices. Springer 2020 - Online ISBN 978-3-030-20208-8

[BC2] Anamika Singh Pratiyush, Sriram Krishnamoorthy, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N Nath, “Advances in Ga2O3 solar-blind UV photodetectors”, In Gallium Oxide, pp. 369-399. Elsevier, 2019.

[BC1] Siddharth Rajan , Sriram Krishnamoorthy, Fatih Akyol , “Gallium Nitride-Based Interband Tunnel Junction Devices ", Gallium Nitride (GaN): Physics, Devices and Technology, Editor: Farid Medjdoub, CRC Press, 299-326 (October 21,2015; ISBN-13: 978- 1482220032).

For the most updated publication list, please use the google scholar links below

Google scholar by year

Google scholar by citations

Last updated: June 2024

Manuscripts in preparation/ Preprints/Submitted

[117] Carl Peterson, Chinmoy Nath Saha, Rachel Kahler, Yizheng Liu, Akhila Mattapalli, Saurav Roy, and Sriram Krishnamoorthy, "Kilovolt-Class β-Ga2O3 Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 10^15 cm^-3 Doped Drift Layers", Submitted. https://arxiv.org/abs/2509.14403

[116] Chinmoy Nath Saha, Saurav Roy, Yizheng Liu, Carl Peterson and Sriram Krishnamoorthy," 2.34 kV β-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width" , Submitted.

[115] Zachary J. Biegler, W. Y. Ho, E. Farzana, S. Krishnamoorthy, and J. S. Speck, "Lateral GaN Schottky Superjunction Diodes", Submitted.

[114] Saurav Roy, Chinmoy N Saha, Carl Peterson, William J Mitchell, James S Speck, Sriram Krishnamoorthy, "Multi-fin β -Ga 2 O 3 Vertical FinFET with Interfin Field Oxide Exhibiting a Breakdown Voltage of 1.8kV and Power Figure of Merit of 1GW/cm2", Submitted. https://doi.org/10.36227/techrxiv.175086813.32040679/v1

[113] Saurav Roy, Arkka Bhattacharyya, and Sriram Krishnamoorthy, " Design and Analysis of High-k Dielectric Superjunction Schottky Barrier Diodes Beyond Unipolar Figure of Merit", https://doi.org/10.36227/techrxiv.24560998.v1

Published Journal Articles

2025

[112] Yizheng Liu, Shane Witsell, John F. Conley, Jr., Sriram Krishnamoorthy, "Orientation-Dependent β-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO", Applied Physics Letters 2025 (Accepted). https://arxiv.org/abs/2503.17895

[111] Jesse Huso, Benjamin Dutton, Cassandra Remple, Matthew D. McCluskey, John S. McCloy, Arkka Bhattacharyya, Sriram Krishnamoorthy, Steve Rebollo, James S. Speck, Joel B. Varley,4 Lars F. Voss, "Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory", Journal of Applied Physics 2025 (Accepted).

[110] Steve Rebollo, Yizheng Liu, Carl Peterson, Sriram Krishnamoorthy, James S. Speck "Intentional Nitrogen Doping of (010) β-Ga2O3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy". Applied Physics Letters 126, 082106 (2025).

[109] Yizheng Liu, Saurav Roy, Carl Peterson, Arkka Bhattacharyya, Sriram Krishnamoorthy, "NiOx/\b {eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage> 3 kV with Plasma Etch Field-Termination", AIP Advances 15, 015114 (2025).

[108] Saurav Roy, Arkka Bhattacharyya, Carl Peterson, Sriram Krishnamoorthy, "Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2O3 on β-Ga2O3", Applied Physics Letters 126, 012105 (2025). (Editor's pick)

2024

[107] Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit, Rachel Kahler, Saurav Roy, Yizheng Liu, Steve Rebollo, Anna Kallistova, Thomas E. Mates, Sriram Krishnamoorthy, "200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β-Ga2O3 epitaxial drift layers", Applied Physics Letters 125, 182103 (2024).

[106] Saurav Roy, Benjamin Kostroun, Yizheng Liu, Jacqueline Cooke, Arkka Bhattacharyya, Carl Peterson, Berardi Sensale-Rodriguez and Sriram Krishnamoorthy, "Low QCVF 20 A/1.4 kV β-Ga2O3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5V", IEEE Electron Device Letters (Early access), doi: 10.1109/LED.2024.3469283 (2024).

[105] Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniella Gogova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva, " Effective uniaxial dielectric function tensor and optical phonons in (-2 0 1)-plane oriented -Ga2O3 films with equally-distributed six-fold rotation domains", Physical Review Applied 22 (4), 044003 (2024).

[104] Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, and Michael A. Scarpulla, "Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3", APL Materials 12, 081101 (2024).

[103] Andrew R Balog, Saurav Roy, Sriram Krishnamoorthy, Nasim Alem, "Investigation of Alumina Atomic-Scale Structure and Crystallization Behavior Across a β-Ga2O3/Al2O3 Interface", Microscopy and Microanalysis, Volume 30, Issue Supplement_1, July 2024, ozae044.078 (2024).

[102] Steve Rebollo, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck, "Heated-H3PO4 etching of (001) β-Ga2O3", Applied Physics Letters 125, 012102 (2024).(Featured article, July 2024 Cover)

[101] Matthew McCluskey; Jesse Huso; John S. McCloy; Arkka Bhattacharyya; Sriram Krishnamoorthy; Joel B. Varley; Clint D. Frye; Lars F. Voss, "Photoluminescence mapping of laser-damaged β-Ga2O3", MRS Communications (2024). https://doi.org/10.1557/s43579-024-00564-1

[100] Carl Peterson, Fikadu Alema, Arkka Bhattacharyya, Ziliang Ling, Saurav Roy, Andrei Osinsky, and Sriram Krishnamoorthy, “Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates”, Applied Physics Letters 124 (8), 082104 (2024).

[99] Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit, Saurav Roy, Yizheng Liu, Steve Rebollo, Sriram Krishnamoorthy, "Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers", Applied Physics Letters 124, 010601 (2024). (Editor's pick - Special Collection: (Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics).

2023

[98] Saurav Roy, Benjamin Kostroun, Jacqueline Cooke, Arkka Bhattacharyya, Carl Peterson, Berardi Sensale Rodriguez, and Sriram Krishnamoorthy, "Ultra-Low Reverse Leakage in Large Area Kilo-Volt class β-Ga2O3 Trench Schottky Barrier Diode with High-k Dielectric RESURF", Applied Physics Letters 123, 243502 (2023) (Special Collection: (Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics).

[97] Esmat Farzana, Saurav Roy, Nolan S. Hendricks, Sriram Krishnamoorthy, and James S. Speck, "Vertical PtOx/Pt/β-Ga2O3 Schottky Diodes with High Permittivity Dielectric Field Plate for Low Leakage and High Breakdown Voltage", Applied Physics Letters 123, 192102 (2023) (Editor's pick - Special Collection: (Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics).

[96] Saurav Roy, Arkka Bhattacharyya, Carl Peterson, and Sriram Krishnamoorthy, "2.1 kV (001)-β-Ga2O3 Vertical Schottky Barrier Diode with High-k Oxide Field Plate", Applied Physics Letters 122 (15), 152101 (2023).

[95] Arkka Bhattacharyya, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy, "Enhanced Electron Mobility in Si-doped (010) -Ga2O3 films with Low-Temperature Buffer Layers", APL (Applied Physics Letters) Materials- (selected as a Featured article). APL Materials 11 (2), 021110 (2023).

[94] Yiwen Song+, Arkka Bhattacharyya+, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy*, Sukwon Choi*,"Ultra-Wide Bandgap Ga2O3-on-SiC MOSFETs", *co-corresponding authors, +Equal contribution. ACS Applied Materials & Interfaces 15 (5), 7137-7147 (2023).

[93] Rujun Sun , Arkka Bhattacharyya , Muad Saleh , Sriram Krishnamoorthy , Michael A. Scarpulla, "Influences of orientation and remote O2 plasma exposure on the interface properties of SiO2/β-Ga2O3 MOS capacitors", IEEE Transactions on Electron Devices 70 (3), 1188-1193 (2023).

2022

[92] Jacqueline Cooke, Praneeth Ranga, Arkka Bhattacharyya, Xueling Cheng, Yunshan Wang, Sriram Krishnamoorthy, Michael Scarpulla, and Berardi Sensale Rodriguez, "Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films", Journal of Vacuum Science & Technology A 41, 013406 (2022).

[91] Saurav Roy, Arkka Bhattacharyya, Carl Peterson, and Sriram Krishnamoorthy, “β-Ga2O3 Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm2 Power Figure of Merit”, IEEE Electron Device Letters ( Volume: 43, Issue: 12, December 2022).

[90] A. Bhattacharyya, S. Roy, P. Ranga, C. Peterson and S. Krishnamoorthy, "High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2," in IEEE Electron Device Letters, vol. 43, no. 10, pp. 1637-1640, Oct. 2022, doi: 10.1109/LED.2022.3196305.

[89] F. Alema*, C. Peterson*, A. Bhattacharyya, S. Roy, S. Krishnamoorthy and A. Osinsky, "Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films," in IEEE Electron Device Letters, vol. 43, no. 10, pp. 1649-1652, Oct. 2022, doi: 10.1109/LED.2022.3200862. (* Equal contribution) - EDL Oct 2022 Editor's pick

[88] Esmat Farzana, Arkka Bhattacharyya, Nolan S Hendricks, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck, "Oxidized Metal Schottky Contact with High-κ Dielectric Field Plate for Low-loss High-power Vertical β-Ga2O3 Schottky Diodes", APL (Applied Physics Letters) Materials (Accepted)- Editor's pick - 2022.

[87] Jacqueline Cooke, Praneeth Ranga, Jani Jesenovec, Arkka Bhattacharyya, Xueling Cheng, Yunshan Wang, John McCloy, Sriram Krishnamoorthy, Michael Scarpulla, Berardi Sensale-Rodriguez, "Photoluminescence microscopy as a noninvasive characterization method for defects in gallium oxide and aluminum gallium oxide epitaxial films", Optical Materials Express (Accepted)- 2022

[86] Benjamin L. Dutton; Cassandra Remple; Natalie Smith-Gray; Magesh Murugesan, Carl Peterson; Brooke K. Downing, Sriram Krishnamoorthy; Matthew D. McCluskey; John S. McCloy, " Alternative Alloy to Increase Bandgap in Gallium Oxide, ß-(ScxGa1-x)2O3, and Rare Earth Stark Luminescence", Journal of Crystal Growth 596, 126823 (2022).

[85] Jia, Wei, Minhan Lou, Prashanth Gopalan, Arkka Bhattacharyya, Sriram Krishnamoorthy, and Berardi Sensale-Rodriguez. "On the terahertz response of metal-gratings on anisotropic dielectric substrates and its prospective application for anisotropic refractive index characterization." Journal of Applied Physics 131, no. 19 (2022): 193101.

[84] Bhattacharyya, Arkka, Shivam Sharma, Fikadu Alema, Praneeth Ranga, Saurav Roy, Carl Peterson, Geroge Seryogin, Andrei Osinsky, Uttam Singisetti, and Sriram Krishnamoorthy. "4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2." Applied Physics Express 15, no. 6 (2022): 061001.

[83] β-Gallium oxide power electronics (Roadmap Article): Andrew J Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R Arehart, Adam T Neal, Shin Mou, Steven A Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki, APL Materials 10 (2), 029201, 6, 2022.

[82] J. Cooke, P. Ranga, J. Jesenovec, J. S. McCloy, S. Krishnamoorthy, M. A. Scarpulla, B. Sensale-Rodriguez, Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films, Nature Scientific Reports 12, 3243 (2022).

[81] Leila Ghadbeigi, Rujun Sun, Jani Jesenovec, Arkka Bhattacharyya, John McCloy, Sriram Krishnamoorthy, Michael A Scarpulla, Berardi Sensale-Rodriguez, Electronic and ionic conductivity in β-Ga2O3 single crystals, Journal of Applied Physics 131 (8), 085102 (2022).

[80] Jani Jesenovec, Benjamin Dutton, Nicholas Stone-Weiss, Adrian Chmielewski, Muad Saleh, Carl Peterson, Nasim Alem, Sriram Krishnamoorthy, John S. McCloy. Alloyed β-(AlxGa1-x)2O3 Bulk Czochralski Single β- (Al0.1Ga0.9)2O3 and Polycrystals β- (Al0.33Ga0.66)2O3, β-(Al0.5Ga0.5)2O3) and Property Trends, Journal of Applied Physics 131 (15), 155702 (2022).

[79] Rajapitamahuni, Anil; Manjeshwar, Anusha; Kumar, Avinash; Datta, Animesh; Ranga, Praneeth; Thoutam, Laxman; Krishnamoorthy, Sriram; Singisetti, Uttam; Jalan, Bharat, Plasmon-phonon coupling in electrostatically gated β-Ga2O3 films with mobility exceeding 200 cm2/VS, ACS Nano, 16, 6, 8812–8819 (2022). (featured on the journal cover- ACS Nano June 28, 2022 Issue)

2021

[78] Yiwen Song, Daniel Shoemaker, Jacob H Leach, Craig McGray, Hsien-Lien Huang, Arkka Bhattacharyya, Yingying Zhang, C Ulises Gonzalez-Valle, Tina Hess, Sarit Zhukovsky, Kevin Ferri, Robert M Lavelle, Carlos Perez, David W Snyder, Jon-Paul Maria, Bladimir Ramos-Alvarado, Xiaojia Wang, Sriram Krishnamoorthy, Jinwoo Hwang, Brian M Foley, Sukwon Choi, “ Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics”, ACS Applied Materials & Interfaces 13 (34), 40817- 40829 (2021).

[77] Yiwen Song, Praneeth Ranga, Yingying Zhang, Zixuan Feng, Hsien-Lien Huang, Marco D Santia, Stefan C Badescu, C Ulises Gonzalez-Valle, Carlos Perez, Kevin Ferri, Robert M Lavelle, David W Snyder, Brianna A Klein, Julia Deitz, Albert G Baca, Jon-Paul Maria, Bladimir Ramos-Alvarado, Jinwoo Hwang, Hongping Zhao, Xiaojia Wang, Sriram Krishnamoorthy, Brian M Foley, Sukwon Choi, “Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films”, ACS Applied Materials & Interfaces 13 (32), 38477-38490 (2021).

[76] Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Carl Peterson, Fikadu Alema, George Seryogin, Andrei Osinsky, Sriram Krishnamoorthy, “Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²”, IEEE Electron Device Letters 42 (9), 1272-1275 (2021).

[75] Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Daniel Shoemaker, Yiwen Song, James Spencer Lundh, Sukwon Choi, Sriram Krishnamoorthy, “130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts”, Applied Physics Express 14 (7), 076502 (2021).

[74] Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga, Heather Splawn, Jacob Leach, Sriram Krishnamoorthy, “High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode with Baliga’s Figure of Merit Over 1 GW/cm2”, IEEE Electron Device Letters 42 (8), 1140 - 1143 (2021).

[73] Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Michael A Scarpulla, Sriram Krishnamoorthy, “N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium”, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39, 3, 030404 (2021).

[72] Eric W Blanton, Michael J Motala, Timothy A Prusnick, Albert Hilton, Jeff L Brown, Arkka Bhattacharyya, Sriram Krishnamoorthy, Kevin Leedy, Nicholas R Glavin, Michael Snure, “Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer”, Small 2021, 17, 2102668 (2021).

[71] Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya, Praneeth Ranga, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy, “In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition”, Advanced Electronic Materials, 7, 2100333 (2021).

[70] Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1-x)2O3/β-Ga2O3 heterostructure channels Applied Physics Express 14 025501, 2021

Praneeth Ranga*, Arkka Bhattacharyya*, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A Scarpulla, Nasim Alem, Sriram Krishnamoorthy (* Equal contribution)

[69] Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga, Sriram Krishnamoorthy, Bharat Jalan, "Impurity Band Conduction in Si-doped β-Ga2O3 Films", Applied Physics Letters 118 (7), 072105 (2021).

[68] Rujun Sun, Yu Kee Ooi, Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael A Scarpulla, "Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence", Journal of Physics D: Applied Physics 54 (17), 174004 (2021).

[67] Leila Ghadbeigi, Jacqueline Cooke, Giang T Dang, Toshiyuki Kawaharamura, Tatsuya Yasuoka, Rujun Sun, Praneeth Ranga, Sriram Krishnamoorthy, Michael A Scarpulla, Berardi Sensale-Rodriguez, Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire, Journal of Electronic Materials 1-9 (2021).

2020

[66] Compensation in (-201) homoepitaxial beta-Ga2O3 thin layers grown by metalorganic vapor-phase epitaxy

Brian Andrew Eisner, Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael A. Scarpulla, Journal of Applied Physics 128 (19), 195703 (2020).

[65] Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals

Rujun SUN, Yu Kee Ooi, Arkka Bhattacharyya, Muad Saleh, Sriram Krishnamoorthy, Kelvin G. Lynn, Michael A. Scarpulla, Applied Physics Letters 117 (21), 212104 (2020).

[64] The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3 measured by terahertz spectroscopy

Prashanth Gopalan, Sean Knight, Ashish Chanana, Megan Stokey, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, Vanya Darakchieva, Zbigniew Galazka, Klaus Irmscher, Andreas Fiedler, Steve Blair, Mathias M. Schubert, Berardi Sensale-Rodriguez, Applied Physics Letters 117 (25), 252103 (2020). (Editor's Pick)

[63] Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Nasim Alem and Sriram Krishnamoorthy, Applied Physics Letters 117, 172105 (2020)

[62] Low Temperature Homoepitaxy Of (010) β-Ga2O3 By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Jonathan Ogle, Luisa Whittaker-Brooks, Sriram Krishnamoorthy, Applied Physics Letters 117 (14), 142102 (2020).

[61] Electro-thermal co-design of β-(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors

Bikramjit Chatterjee, Yiwen Song, James Spencer Lundh, Yuewei Zhang, Zhanbo Xia, Zahabul Islam, Jacob Leach, Craig McGray, Praneeth Ranga, Sriram Krishnamoorthy, Aman Haque, Siddharth Rajan and Sukwon Choi, Appl. Phys. Lett. 117, 153501 (2020);

[60] Design of β-Ga2O3 Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy, IEEE Transactions on Electron Devices 67 (11), 4842-4848 (2020).

[59] Highly tunable, polarization-engineered two- dimensional electron gas in ε-(AlGa)2O3/ ε-Ga2O3 heterostructures

Praneeth Ranga*, Sung Beom Cho*, Rohan Mishra, Sriram Krishnamoorthy, Applied Physics Express 13, 061009 (2020). (*-Equal contribution)

[58] Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0. 74)2O3/ β -Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A Scarpulla, Daniel Feezell, Sriram Krishnamoorthy, Applied Physics Express 13 (4), 045501 (2020).

[57] Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga2O3 Films from Oxide Printing of Liquid Metal Gallium

Jacqueline Cooke, Leila Ghadbeigi, Rujun Sun, Arkka Bhattacharyya, Yunshan Wang, Michael A Scarpulla, Sriram Krishnamoorthy, Berardi Sensale-Rodriguez, physica status solidi (a) 217 (10), 1901007 (2020).

[56] Electrical and Optical Properties of Degenerately Doped Hf:β-Ga2O3 Single Crystals

Muad Saleh, Joel B. Varley, Jani Jesenovec, Arkka Bhattacharyya, Santosh Swain, Sriram Krishnamoorthy, Kelvin Lynn, Semiconductor Science and Technology 35 (4), 04LT01 (2020).

[55] Theoretical investigation of (AlxGa1-x)2O3/ Ga2O3 intersubband transitions and quantum well infrared photodetectors

Joseph Lyman, Sriram Krishnamoorthy, Journal of Applied Physics 127 (17), 173102 (2020).

[54] Schottky barrier height engineering in β-Ga2O3 using thin SiO2 as a thin interfacial layer

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Michael Scarpulla, Kelvin Lynn and Sriram Krishnamoorthy, IEEE Journal of the Electron Devices Society 8, 286-294 (2020).

2019

[53] Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, Sriram Krishnamoorthy, “Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy”, Applied Physics Express 12 (11), 111004 (2019) (Spotlight Article 2019)

[52] Muad Saleh, Arkka Bhattacharyya, Joel Basile Varley, Santosh Kumar Swain, Jani Jesenovec,

Sriram Krishnamoorthy, Kelvin Lynn, “Electrical and optical properties of Zr doped β-Ga2O3 single crystals”, Applied Physics Express, 12 085502 (2019).

[51] Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R Arehart, Steven A Ringel, Siddharth Rajan, “Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3”, Applied Physics Letters 115 (15), 152106 (2019).

[50] Prashanth Gopalan, Ashish Chanana, Sriram Krishnamoorthy, Ajay Nahata, Michael A Scarpulla, Berardi Sensale‐Rodriguez, “Ultrafast THz modulators with WSe2 thin films”, Optical Materials Express 9 (2), 826‐836 (2019).

2010-2018

[49] Yunshan Wang, Peter T Dickens, Joel B Varley, Xiaojuan Ni, Emmanuel Lotubai, Samuel Sprawls, Feng Liu, Vincenzo Lordi, Sriram Krishnamoorthy, Steve Blair, Kelvin G Lynn, Michael Scarpulla, Berardi Sensale‐Rodriguez, “Incident wavelength and polarization dependence of spectral shifts in β‐ Ga 2 O 3 UV photoluminescence”, Nature Scientific reports 8 (1), 18075 (2018).

Publications based Post-doctoral Research & Graduate Research

48. Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N Nath, “ MBE grown Self-Poweredb {eta}-Ga2O3 MSM Deep-UV Photodetector”, Japanese Journal of Applied Physics 57 (6), 060313 (2018).

47. Hantian Gao, Shreyas Muralidharan, Nick Pronin , Md Rezaul Karim, Susan M. White , Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, and Leonard J. Brillson, “Native Point Defect Identification and Control in Ga2O3” , Applied Physics Letters 112 (24), 242102 (2018).

46. Chandan Joishi, Subrina Rafique, Zhanbo Xia, Lu Han, Sriram Krishnamoorthy, Yuewei Zhang, Saurabh Lodha, Hongping Zhao, Siddharth Rajan, “Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes”, Applied Physics Express 11 (3), 031101 (2018).

45. Zhanbo Xia, Chandan Joishi, Sriram Krishnamoorthy, Sanyam Bajaj, Yuewei Zhang, Mark Brenner, Saurabh Lodha, Siddharth Rajan, “Delta doped β-Ga2O3 Field Effect Transistors with Regrown Ohmic Contacts”, IEEE Electron Device Letters (accepted for publication) (2018).

44. Choong Hee Lee, Sriram Krishnamoorthy, Pran K Paul, Dante J O'Hara, Mark R Brenner, Roland K Kawakami, Aaron R Arehart, Siddharth Rajan, “Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy”, Applied Physics Letters 111 (20), 202101 (2017).

43. Fatih Akyol, Yuewei Zhang, Sriram Krishnamoorthy, Siddharth Rajan, “Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content”, Applied Physics Express 10 (12), 121003 (2017).

42. Sriram Krishnamoorthy, Z. Xia, C. Joishi, Y. Zhang, J. McGlone, J. Johnson, M. Brenner, A. R. Arehart, J. A. Hwang, S. Lodha, S. Rajan, “Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor” , Applied Physics Letters 111 (2), 023502 (2017).

41. Sriram Krishnamoorthy , Zhanbo Xia, Sanyam Bajaj, Mark Brenner, and Siddharth Rajan, “Delta-doped Beta- Gallium Oxide Field Effect Transistor”, Applied Physics Express 10 (5), 051102 (2017) – 2017 Spotlight Article – http://iopscience.iop.org/journal/1882-0786/page/Spotlights

40. Anamika Singh Pratiyush , Sriram Krishnamoorthy , Swanand Vishnu Solanke, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N. Nath, “High Responsivity in Molecular Beam Epitaxy (MBE) grown beta-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector” , Applied Physics Letters, 110(22), 221107 (2017). (ASP and SK Equal contribution).

39. JM Johnson, CH Lee, S Krishnamoorthy, S Rajan, J Hwang, “Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface”, Microscopy and Microanalysis 23 (S1), 1728-1729 (2017).

38. JM Johnson, S Krishnamoorthy, S Rajan, J Hwang, “ Point and Extended Defects in Ultra Wide Band Gap β-Ga 2 O 3 Interfaces”, Microscopy and Microanalysis 23 (S1), 1454-1455 (2017).

37. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Andrew A Allerman, Michael W Moseley, Andrew M Armstrong, Siddharth Rajan, “Tunnel-injected sub-260 nm ultraviolet light emitting diodes”, Applied Physics Letters 110 (20), 201102 (2017).

36. Choong Hee Lee , Sriram Krishnamoorthy , Dante J. O’Hara, Jared M. Johnson, John Jamison, Roberto C. Myers, Roland K. Kawakami, Jinwoo Hwang, Siddharth Rajan, “ Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates “, arXiv:1610.06265 Click here (CHL and SK Equal contribution ) , Journal of Applied Physics 121 (9), 094302 (2017). – Article covered in nanotechweb.org (http://nanotechweb.org/cws/article/tech/68868)

35. Choong Hee Lee, Edwin W. Lee II, William McCulloch, Zane Jamal-Eddine, Sriram Krishnamoorthy , Michael J Newburger, Roland K. Kawakami, Yiying Wu and Siddharth Rajan, “A self-limiting layer-by-layer etching technique for 2H-MoS2”, Applied Physics Express, Volume 10, Number 3, 035201 (2017).

34. Yuewei Zhang, Sriram Krishnamoorthy , Fatih Akyol , Jared M. Johnson , Andrew A. Allerman , Michael William Moseley , Andrew M. Armstrong , Jinwoo Hwang , Siddharth Rajan , “Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs” – Accepted for publication in Applied Physics Letters (2017).

33. Sanyam Bajaj, Zhichao Yang, Fatih Akyol, Pil Sung Park, Yuewei Zhang, Sriram Krishnamoorthy, David J. Meyer, Siddharth Rajan, “Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity”– IEEE Transactions on Electron Devices 64 (8), 3114-3119 (2017).

32. Sriram Krishnamoorthy , Edwin W. Lee II, Choong Hee Lee, Yuewei Zhang, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu, Siddharth Rajan” High Current Density 2D/3D MoS2/GaN Esaki Tunnel Diodes“, Applied Physics Letters 109 (18), 183505 (2016) .

31. Yuewei Zhang, Sriram Krishnamoorthy , Fatih Akyol , Andrew A. Allerman , Michael William Moseley , Andrew M. Armstrong , Siddharth Rajan , ” Design and Demonstration of Ultra-Wide Bandgap AlGaN Tunnel Junctions ”, Phys. Lett. 109, 121102 (2016).

30. Yuewei Zhang, Sriram Krishnamoorthy , Fatih Akyol , Andrew A. Allerman , Michael William Moseley , Andrew M. Armstrong , Siddharth Rajan , ” Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes ” . Applied Physics Letters 109, 191105 (2016).

29. Fatih Akyol , Sriram Krishnamoorthy , Yuewei Zhang , Jared Johnson , Jinwoo Hwang , Siddharth Rajan, ” Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance ” Applied Physics Letters 108, 131103 (2016).

28. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy , Yuewei Zhang, Siddharth Rajan , ” AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts ”, Applied Physics Letters 109, 133508 (2016).

27. Zhichao Yang , Yuewei Zhang , Sriram Krishnamoorthy , Digbijoy Neelim Nath , Jacob B. Khurgin , Siddharth Rajan “Current Gain above 10 in sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors with GaN/AlN Emitter“, Applied Physics Letters 108, 192101 (2016) .

26. Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy , Fatih Akyol, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan , ” Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs ” Applied Physics Express 9, 052102 (2016).

25. Emre Gür, Fatih Akyol, Sriram Krishnamoorthy , Siddharth Rajan, Steven A Ringel , ” Deep level defects in N-rich and In-rich In(x) Ga(1-x)N: in composition dependence ” Superlattices and Microstructures, doi:10.1016/j.spmi.2016.05.009 (2016).

24. Fatih Akyol, Sriram Krishnamoorthy , Yuewei Zhang, Siddharth Rajan, "GaN Based Three-junction Cascaded Light Emitting Diode with Low-resistance InGaN Tunnel Junctions", Applied Physics Express 8, 082103 (2015).

23. Yuewei Zhang, Sriram Krishnamoorthy , Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan, " Interband Tunneling for Hole Injection in III- Nitride Ultra-violet Emitters" Applied Physics Letters 106, 141103 (2015).

22. Choong Hee Lee, William McCulloch, Lu Ma, Edwin Lee, Sriram Krishnamoorthy , Jinwoo Hwang, Yiying Wu, and Siddharth Rajan, " Transferred Large Area Single Crystal MoS2 Field Effect Transistors", Applied Physics Letters, 107, 193503 (2015).

21. Edwin W. Lee II, Choong Hee Lee, Pran K Paul, Lu Ma, William D McCulloch, Sriram Krishnamoorthy , Yiying Wu, Aaron Arehart, Siddharth Rajan, "Layer-Transferred MoS2/GaN PN Diodes", Applied Physics Letters 107, 103505 (2015).

20. Sanyam Bajaj , Omor Faruk Shoron , Pil Sung Park , Sriram Krishnamoorthy , Fatih Akyol , Ting-Hsiang Hung , Shahed Reza , Eduardo Chumbes , Jacob B. Khurgin , Siddharth Rajan, " Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs ", Applied Physics Letters, 107, 153504 (2015).

19. Pil Sung Park, Sriram Krishnamoorthy, Sanyam Bajaj, Digbijoy Nath, and Siddharth Rajan, " Recess- Free Non-alloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs ", IEEE Electron Device Letters, 36, NO. 3, pp 226- 228 (2015).

18. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, " InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes ", Applied Physics Letters 105, 141104 (2014).

17. Ting-Hsiang Hung, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy Nath and Siddharth Rajan,"Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs " , IEEE Electron Device Letters 35 (3), 312-314 (2014).

16. Prashanth Ramesh, Sriram Krishnamoorthy , Siddharth Rajan and Gregory Washington, "Energy Band Engineering for photoelectrochemical etching of GaN/InGaN heterostructures " , Applied Physics Letters 104, 243503 (2014).

15. Sriram Krishnamoorthy , Fatih Akyol, Pil Sung Park, and Siddharth Rajan, "Low Resistance GaN/InGaN/GaN tunnel junctions ", Applied Physics Letters 102, 113503 (2013).

14. Sriram Krishnamoorthy , Thomas Kent, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, "GdN Nanoisland-Based GaN Tunnel Junctions ", Nano Letters 13 (6) 2570- 2575 (2013).

13. Fatih Akyol, Sriram Krishnamoorthy, and Siddharth Rajan, “Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop ", Applied Physics Letters 103, 081107 (2013).

12. Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, “Electron Tunneling Spectroscopy Study of Electrically Active Traps in AlGaN/GaN High Electron Mobility Transistors", Applied Physics Letters 103, 223507 (2013) .

11. Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, " A study of electrically active traps in AlGaN/GaN high electron mobility transistor", Applied Physics Letters 103, 173520 (2013).

10. Masihhur R. Laskar, Lu Ma, ShanthaKumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Wu Lu, Yiying Wu, and Siddharth Rajan, "Large Area Single Crystal (0001) Oriented MoS2 Thin Films", Applied Physics Letters, 102, 252108 (2013).

9. Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy N. Nath , Pil Sung Park and Siddharth Rajan, "Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces", Applied Physics Letters 102, 072105 (2013).

8. Prashanth Ramesh, Sriram Krishnamoorthy, Siddharth Rajan, and Gregory Washington," Fabrication and characterization of piezoelectric gallium nitride switch for optical MEMS applications", Smart Materials and Structures 21, 094003 (2012).

7. Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, "Suppression of Electron Overflow and Efficiency Droop in N-polar GaN Green LEDs", Applied Physics Letters 100, 111118 (2012).

6. V Di Lecce, Sriram Krishnamoorthy, Michele Esposto, Ting-Hsiang Hung, Alessandro Chini, and Siddharth Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", Electronics Letters 48, 347 (2012).

5. Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, and Siddharth Rajan, "Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization", Applied Physics Letters, 100, 063507 (2012).

4. Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, "Demonstration of forward inter-band tunneling in GaN by Polarization engineering", Applied Physics Letters 99, 233504 (2011).

3. Emre Gur, Zeng Zhang, Sriram Krishnamoorthy , Siddharth Rajan and Steve Ringel, "Detailed characterization of deep levels in InGaN", Applied Physics Letters 99, 092109 (2011).

2. Michele Esposto, Sriram Krishnamoorthy , Digbijoy Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, "Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride ", Applied Physics Letters 99, 133503 (2011).

1. Sriram Krishnamoorthy, Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Siddharth Rajan "Polarization engineered GaN/InGaN/GaN tunnel diodes," Applied Physics Letters 97,203502 (2010).

CONFERENCE PROCEEDINGS

**Incomplete list**

Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Sohel S., Krishnamoorthy S., Meyer D. & Rajan S. (2017). Small-signal characteristics of graded AlGaN channel PolFETs. Device Research Conference - Conference Digest, DRC. Published, 08/01/2017.

14. Yang Z., Zhang Y., Krishnamoorthy S., Nath D., Khurgin J. & Rajan S. (2016). Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter. Device Research Conference - Conference Digest, DRC. Vol. 2016-August. Published, 08/22/2016.

Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y., Armstrong A., Allerman A. & Rajan S. (2016). Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics. Device Research Conference - Conference Digest, DRC. Vol. 2016-August. Published, 08/22/2016.

Zhang Y., Krishnamoorthy S., Akyol F., Khandaker S., Allerman A., Moseley M., Armstrong A. & Rajan S. (2015). Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 69-70. Published, 08/03/2015.

Bajaj S., Shoron O., Park P., Krishnamoorthy S., Akyol F., Hung T., Reza S., Chumbes E., Khurgin J. & Rajan S. (2015). Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 33-34. Published, 08/03/2015.

Yang Z., Zhang Y., Krishnamoorthy S., Nath D., Khurgin J. & Rajan S. (2015). Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 53-54. Published, 08/03/2015.

Krishnamoorthy S., Akyol F. & Rajan S. (2014). III-nitride tunnel junctions for efficient solid state lighting. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8986. Published, 01/01/2014.

Hung T., Park P., Krishnamoorthy S., Nath D., Bajaj S. & Rajan S. (2014). Lateral energy band engineering of Al2O3/III-nitride interfaces. Device Research Conference - Conference Digest, DRC. 131-132. Published, 01/01/2014.

Yang J., Cui S., Ma T., Hung T., Nath D., Krishnamoorthy S. & Rajan S. (2013). Determination of trap energy levels in AlGaN/GaN HEMT. Device Research Conference - Conference Digest, DRC. 79-80. Published, 12/16/2013.

Hung T., Krishnamoorthy S., Nath D., Park P. & Rajan S. (2013). Interface charge engineering in GaN-based MIS-HEMTs. 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 147-150. Published, 12/01/2013.

Hung T., Esposto M., Nath D., Krishnamoorthy S., Park P. & Rajan S. (2013). Study of interfacial charge properties and engineering of ALD dielectric/III-nitride interfaces. 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 191-194. Published, 11/15/2013.

Krishnamoorthy S., Akyol F., Yang J., Park P., Myers R. & Rajan S. (2012). Record low tunnel junction specific resistivity (<3×10-4Ωcm2) in GaN inter-band tunnel junctions. Device Research Conference - Conference Digest, DRC. 157-158. Published, 10/05/2012.

Growden T., Krishnamoorthy S., Nath D., Ramesh A., Rajan S. & Berger P. (2012). Methods for attaining high interband tunneling current in III-Nitrides. Device Research Conference - Conference Digest, DRC. 163-164. Published, 10/05/2012.

Ramesh P., Washington G., Krishnamoorthy S. & Rajan S. (2011). Fabrication and characterization of Gallium Nitride unimorphs for optical MEMS applications. ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2011. Vol. 1, 201-209. Published, 12/01/2011.

Krishnamoorthy S., Park P. & Rajan S. (2011). III-nitride tunnel diodes with record forward tunnel current density. Device Research Conference - Conference Digest, DRC. Published, 12/01/2011.

Google Sites

Report abuse