Conference Presentations
Last updated: April 2024
We attend conferences regularly to present our research updates. We typically attend Electronic Materials Conference (EMC), DRC (Device Research Conference), MRS (Materials Research Society), IWGO (International Workshop on Gallium Oxide and Related Materials), GOX (Gallium Oxide Workshop) and WOCSEMMAD (Workshop on Compound Semiconductor Materials & Devices ) conferences.
2024
194. Carl Peterson et.al. "High Electron Mobility Low-Background Carrier Density Intentionally and Unintentionally Doped (010) β-Ga2O3 Drift Layers" (Upcoming- GOX 2024).
193. Saurav Roy et.al. "Low QCVF Trench β-Ga2O3 Schottky Barrier Diode with Extreme-k Dielectric RESURF Using Low Work-Function Anode Contact" (Upcoming- GOX 2024).
192. Yizheng Liu et.al. "NiOx/β-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Deep Plasma Etch Field Termination" (Upcoming- GOX 2024).
191. M. Schubert et. al. "Effective Uniaxial Dielectric Function Tensor and Optical Phonons in (-201)-Plane Oriented β-Ga2O3 Films with Equally-Distributed Six-Fold Rotation Domains" (Upcoming- GOX 2024).
190. E. Farzana, N. Hendricks, S. Roy, A. Bhattacharyya, S. Islam, R. Cadena, A. Senarath, A. Sengupta, E. Zhang, D. Fleetwood, R. Schrimpf, S. Krishnamoorthy and J. Speck, "Vertical β-Ga2O3 Diodes for High-voltage and Harsh Radiation Application" (Invited), International Workshop on Gallium Oxide and Related Materials 5th IWGO 2024, May 26 – 31, 2024, Berlin, Germany
189. Kyle J. Liddy, Arkka Bhattacharyya, Yuki Ueda, Ahmad Islam, Joshua J. Piel, Kelson D. Chabak, Takuya Igarashi, Kimiyoshi Koshi, Shigenobu Yamakoshi, Kohei Sasaki, Akito Kuramata, Sriram Krishnamoorthy, Andrew J. Green, "β-Ga2O3 MOSFETs on Highly Uniform 2’’ Vertical Bridgman Substrates", International Workshop on Gallium Oxide and Related Materials 5th IWGO 2024, May 26 – 31, 2024, Berlin, Germany
188. M.D. McCluskey, J. Huso, C. Remple, B.L. Dutton, J.S. McCloy, S. Rebollo, S. Krishnamoorthy and J.S. Speck, "Photoluminescence Mapping of Defects in β-Ga2O3", International Workshop on Gallium Oxide and Related Materials 5th IWGO 2024, May 26 – 31, 2024, Berlin, Germany
187. Palvan Seyidov, Carl Peterson, Owen Ernst, Saurav Roy, Arkka Bhattacharyya, Zbigniew Galazka, Sriram Krishnamoorthy and Andreas Fiedler, "Comparison of PECVD grown SiO2 and SiNx passivation on β-Ga2O3", Poster, International Workshop on Gallium Oxide and Related Materials 5th IWGO 2024, May 26 – 31, 2024, Berlin, Germany
186. Sriram Krishnamoorthy, Saurav Roy, "High-k Dielectrics-Based Electric Field Engineering in β-Ga2O3 Power Diodes", (Invited) H01 - Wide-Bandgap Semiconductor Materials and Devices Symposium, 245th ECS Meeting May 26-May 30, 2024, San Francisco, CA
185. Sriram Krishnamoorthy, "β-Gallium Oxide Metal Organic Vapor Phase Epitaxy for Lateral and Vertical Power Devices", (Invited) 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), May 12-17, 2024, Las Vegas, NV.
184. Matthew D. McCluskey, Jesse Huso, Cassandra Remple, John McCloy, Arkka Bhattacharyya and Sriram Krishnamoorthy, "Photoluminescence Mapping of Defects in β-Ga2O3 Epilayers", 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), May 12-17, 2024, Las Vegas, NV.
183. Sriram Krishnamoorthy et.al. "Advances in Gallium Oxide Drift Layer Epitaxy and Vertical Power Devices", Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD 2024), Las Vegas, NV. (Invitation only workshop)
182. Saurav Roy et.al. "Record Low QcVF Ampere-Class High Voltage β-Ga2O3 Vertical Schottky Barrier Diodes", Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD 2024), Las Vegas, NV. (Invitation only workshop)
181. Sriram Krishnamoorthy , Arkka Bhattacharyya, "Homoepitaxial Metalorganic Vapor Phase Epitaxy Growth of (010) β-Ga2O3 Films For Lateral and Vertical Power Devices", ACerS 14th Electronic Materials and Applications (EMA), February 13-16, 2024 in Denver, Colorado. (Invited)
180. Matthew McCluskey, Jesse Huso, Cassandra Remple, John McCloy, Steve Rebollo, Sriram Krishnamoorthy, James Speck, "Photoluminescence mapping of surface defects on β-Ga2O3", ACerS 14th Electronic Materials and Applications (EMA), February 13-16, 2024 in Denver, Colorado.
2023
179. Sriram Krishnamoorthy , Arkka Bhattacharyya, Saurav Roy, "β-Gallium Oxide: Progress in Epitaxial Materials and Power Devices", 2023 MRS Fall Meeting & Exhibit, November 26 to December 1, 2023, Boston, Massachusetts. (Invited)
178. Zachary Biegler, Esmat Farzana, Wan Ying Ho, Sriram Krishnamoorthy, James S Speck, " GaN Lateral Schottky Superjunction Diodes", The 14th International Conference on Nitride Semiconductors (ICNS-14) to be held in Fukuoka, Japan , November 12-17, 2023.
177. Sriram Krishnamoorthy , Arkka Bhattacharyya, Saurav Roy, Carl Peterson, "Epitaxy and Engineering of beta-Ga2O3 Devices for High-Voltage Applications", 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21) , Tucson, Arizona, USA, August 13-18, 2023.
176. Carl Peterson, F. Alema, Z. Ling, A. Bhattacharyya, S. Roy, A. Osinsky, S. Krishnamoorthy, "Wafer-Scale β-Ga2O3 Field Effect Transistors with MOCVD-Grown Channel Layers", 6th U.S. Workshop on Gallium Oxide (GOX 2023), University at Buffalo Campus, Buffalo, New York, August 13-16, 2023.
175. J. Cooke, M. Lou, M. Scarpulla, A. Bhattacharyya, X. Cheng, Y. Wang, S. Krishnamoorthy, Berardi Sensale-Rodriguez, "Linearly Polarized UV, Blue, and IR Photoluminescence from βGa2O3", 6th U.S. Workshop on Gallium Oxide (GOX 2023), University at Buffalo Campus, Buffalo, New York, August 13-16, 2023 (Poster).
174. Saurav Roy, A. Bhattacharyya, C. Peterson, S. Krishnamoorthy, "Dielectric Lifetime Enhancement of in-situ MOCVD Al2O3 on βGa2O3 Using Temperature Modulated Deposition", 6th U.S. Workshop on Gallium Oxide (GOX 2023), University at Buffalo Campus, Buffalo, New York, August 13-16, 2023 (Best poster award).
173. Saurav Roy, A. Bhattacharyya, J. Cooke, C. Peterson, B. Rodriguez, S. Krishnamoorthy, "Large Area Trench β-Ga2O3 Schottky Barrier Diode with Extreme-K Dielectric Resurf", 6th U.S. Workshop on Gallium Oxide (GOX 2023), University at Buffalo Campus, Buffalo, New York, August 13-16, 2023 . (best presentation award finalist)
172. Steve Rebollo, T. Itoh, S. Krishnamoorthy, J. Speck, "An Investigation of (001) β-Ga2O3 Etching via Heated H3PO4", 6th U.S. Workshop on Gallium Oxide (GOX 2023), University at Buffalo Campus, Buffalo, New York, August 13-16, 2023 .
171. Esmat Farzana, S. Roy, S. Krishnamoorthy, J. Speck, "Vertical β-Ga2O3 Diodes with PtOx/Interlayer Pt Schottky Contact and High Permittivity Dielectric Field Plate for Low Loss and High Breakdown Voltage", University at Buffalo Campus, Buffalo, New York, August 13-16, 2023 .
170. Esmat Farzana, Nolan Hendricks, Saurav Roy, Sriram Krishnamoorthy and James S. Speck, "Vertical β-Ga2O3 Diodes with High Barrier PtOx Contacts and High-k TiO2 Field Plate on Low-Doped Epitaxy for High Breakdown Voltage", 65th Electronic Materials Conference, University of California, Santa Barbara, Santa Barbara, California, June 28-30, 2023.
169. Nathan D. Rock, Michael Scarpulla, Haobo Yang, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael Walker, Wei Zhao and Ming K. Cheng, "Measuring Diffusion of Al, Sn, and Fe in Ga2O3 Using β-(Al,Ga)2O3/Ga2O3 Superlattices", 65th Electronic Materials Conference, University of California, Santa Barbara, Santa Barbara, California, June 28-30, 2023.
168. Minhan Lou, Jacqueline Cooke, Michael Scarpulla, Arkka Bhattacharyya, Sriram Krishnamoorthy, Xueling Cheng, Yunshan Wang and Berardi Sensale Rodriguez, "Linearly Polarized UV, Blue and IR Photoluminescence from βGa2O3", 65th Electronic Materials Conference, University of California, Santa Barbara, Santa Barbara, California, June 28-30, 2023.
167. Saurav Roy, Arkka Bhattacharyya, Carl Peterson and Sriram Krishnamoorthy, "Enhancing the Dielectric Performance of Al2O3 on βGa2O3 Using Temperature Modulated in situ Dielectric Deposition", 65th Electronic Materials Conference, University of California, Santa Barbara, Santa Barbara, California, June 28-30, 2023.
166. Jacqueline Cooke, Praneeth Ranga, Jani Jesenovec, Arkka Bhattacharyya, Xueling Cheng, Yunshan Wang, John S. McCloy, Sriram Krishnamoorthy, Michael Scarpulla and Berardi Sensale Rodriguez, "Characterization Analysis of Extended Defects in β-Ga2O3 and AGO", 65th Electronic Materials Conference, University of California, Santa Barbara, Santa Barbara, California, June 28-30, 2023.
165. Saurav Roy, A. Bhattacharyya, Jacqueline Cooke, C. Peterson, Berardi Sensale Rodriguez and S. Krishnamoorthy. “First Demonstration of 15A/1.4 kV Large Area Trench β-Ga2O3 Schottky Barrier Diode with High-k RESURF” In 81st Device Research Conference (DRC 2023), UCSB, June 2023. (Oral Presentation)
2022
164. Saurav Roy, A. Bhattacharyya, C. Peterson and S. Krishnamoorthy, " β-Ga2O3 Dielectric Superjunction Schottky Barrier Diode Exceeding SiC Unipolar Figure of Merit: A Novel Approach to Realizing Superjunction Devices Without p-Type Doping" In 6th IEEE International Conference on Emerging Electronics (ICEE 2022), Bangalore, India. (Oral Presentation)
163. Bhattacharyya, Arkka, Saurav Roy, Carl Peterson, Fikadu Alema, Andrei Osinsky, and Sriram Krishnamoorthy, "Ultrawide Bandgap β-Ga 2 O 3 Transistors for Efficient Multi-Kilovolt Power Switching." In 6th IEEE International Conference on Emerging Electronics (ICEE 2022), Bangalore, India. (Invited talk)
162. Arkka Bhattacharyya, Yiwen Song, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sukwon Choi, and Sriram Krishnamoorthy, "Multi-kV class homoepitaxial Ga2O3-on-SiC power MOSFETs with high heat transfer performance", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022. (late news Oral presentation)
161. Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Carl Peterson, and Sriram Krishnamoorthy, "Over 0.9 GW/cm2 multi kV-class fin-shape β-Ga2O3 power MESFETs", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022. (Outstanding Oral Paper Award)
160. Saurav Roy, Arkka Bhattacharyya, Carl Peterson, and Sriram Krishnamoorthy, "Demonstration of superjunction-like high-k oxide/ β-Ga2O3 lateral schottky barrier diode with more than 1 GW/cm2 power figure of merit", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022.
159. Sriram Krishnamoorthy, Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Carl Peterson, "MOCVD-grown Gallium (Aluminum) Oxide thin films, heterostructures and in-situ dielectrics (Invited Talk)", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022.
158. Saurav Roy, Arkka Bhattacharyya, Carl Peterson, and Sriram Krishnamoorthy, "Growth & characterization of high temperature in-situ Al2O3 /(010) β-Ga2O3 interface", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022. (Late news Poster)
157. Rujun Sun, Arkka Bhattacharyya, Muad Saleh, Sriram Krishnamoorthy, and Michael A. Scarpulla, "Influences of orientation and remote O2 plasma exposure on the interface properties of SiO2/β-Ga2O3 MOS capacitors", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022. (Poster)
156. Jacqueline Cooke, Praneeth Ranga, Jani Jesenovec, Arkka Bhattacharyya, Xueling Cheng, Yunshan Wang, John S. McCloy, Sriram Krishnamoorthy, Michael A. Scarpulla, and Berardi Sensale-Rodriguez, "Extended defects in MOVPE homoepitaxial β-Ga2O3 films and effects on luminescence", The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), Nagano, Japan, October 2022. (Poster)
155. C. Peterson, F. Alema, S. Roy, A. Bhattacharyya, A. Osinsky, S. Krishnamoorthy, "Record Low Specific Resistance Ohmic Contacts to Highly Doped MOVPE-Grown β-Ga2O3 and β-(AlXGa1-X)2O3 Epitaxial Films", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC (Poster)
154. Saurav Roy, A. Bhattacharyya, C. Peterson, S. Krishnamoorthy, "High Temperature In-situ MOCVD-grown Al2O3 Dielectric on (010) βGa2O3 with 10 MV/cm Breakdown Field", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
153. Arkka Bhattacharyya, S. Roy, P. Ranga, S. Krishnamoorthy, "High Electron Mobility Si-doped β-Ga2O3 MESFETs", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
152. Esmat Farzana, A. Bhattacharyya, S. Krishnamoorthy, J. Speck, "Metal Oxide (PtOX) Schottky Contact with High-k Dielectric Field Plate for Improved Field Management in Vertical β-Ga2O3 Devices", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
151. H. Yang, A. Levin, B. Eisner, A. Bhattacharyya, P. Ranga, S. Krishnamoorthy, Michael Scarpulla, "Determination of Cation Vacancy and Al Diffusion Constants in B- (Al, Ga)2O3 / Ga2O3 Superlattices" , 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
150. Kenny Huynh, Y. Wang, M. Liao, P. Ranga, S. Krishnamoorthy, M. Goorsky, "Aluminum Incorporation Striations in (-201) β-(AlxGa1-x)2O3 Films Grown on C-Plane and Miscut Sapphire Substrates", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
149. A. Rajapitamahuni, A. Manjeshwar, A. Kumar, A. Datta, P. Ranga, L. Thoutam, S. Krishnamoorthy, Uttam Singisetti, B. Jalan, "Plasmon-phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2V-1s-1 ", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
148. Jacqueline Cooke, P. Ranga, J. Jesenovec, J. McCloy, S. Krishnamoorthy, M. Scarpulla, B. Sensale-Rodriguez, "Photoluminescence Mapping of Gallium Oxide and Aluminum Gallium Oxide Epitaxial Films", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
147. Yiwen Song, A. Bhattacharyya, A. Karim, D. Shoemaker, H. Huang, C. McGray, J. Leach, Kyma Technologies, J. Hwang, S. Krishnamoorthy, S. Choi, " The Co-Design, Fabrication, and Characterization of a Ga2O3-on-SiC MOSFET", 5th U.S. Gallium Oxide Workshop (GOX 2022) , Washington DC.
146. S. Roy, A. Bhattacharyya, C. Peterson and S. Krishnamoorthy, “High Voltage β-Ga2O3 Lateral Schottky barrier diode with High Permittivity Dielectric RESURF demonstrating > 1 GW/cm2 Power Figure of Merit.” In 80th Device Research Conference (DRC) 2022. (Oral Presentation- Late News)
145. S. Roy, A. Chmielewski, A. Bhattacharyya, P. Ranga, R. Sun, M. Scarpulla, N. Alem, S. Krishnamoorthy, "Growth and Interface Characterization of In-situ MOCVD-grown Al2O3 Dielectric/(010) β-Ga2O3 Interface", ACerS EMA 2022.
144. S. Krishnamoorthy* and A. Bhattacharyya, “High Performance Homoepitaxial Gallium Oxide Lateral Power Devices on Bulk and Composite Substrates.” In 80th Device Research Conference (DRC) 2022. (*Invited Talk)
143. S. Krishnamoorthy, A. Bhattacharyya, P. Ranga, & S. Roy, S. “MOCVD-grown high-performance gallium-oxide thin films, heterostructures, and devices” In Oxide-based Materials and Devices XIII (p. PC120020J). SPIE. (2022, March)
142. A. Bhattacharyya, S. Sharma, F. Alema, P. Ranga, S. Roy, C. Peterson, G. Seryogin, A. Osinsky, U. Singisetti, S. Krishnamoorthy, " 4.4 kV β-Ga2O3 Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2,", In Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD 2022).
141. S. Krishnamoorthy*, S. Roy, and A. Bhattacharyya, ” Exploring the Potential and Limits of Gallium Oxide Electronics: In-situ Dielectrics, Heterointegration and High-k Field Plates”, In 241st ECS Meeting 2022. (*invited).
140. S. Krishnamoorthy, A. Bhattacharyya, P. Ranga, and S. Roy,” Advances in Epitaxial Gallium (Aluminum) Oxide Thin Films and Heterostructure Materials and Devices”, In Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD 2022).
139. M. Scarpulla, R. Sun, H. Yang, N. Yonkee, A. Bhattacharyya, P. Ranga, and S. Krishnamoorthy,” Defect Manipulation in β-Ga2O3 ”, In Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD 2022). (invited).
138. A. Bhattacharyya, P. Ranga, and S. Krishnamoorthy* ,” Lateral Gallium Oxide Field Effect Transistors with High Figure of Merit”, In 6th Electron Devices Technology and Manufacturing Conference (EDTM 2022). (*invited).
2021
137. Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Carl Peterson, Fikadu Alema, George Seryogin, Andrei Osinsky, Sriram Krishnamoorthy,”MOVPE-grown β-Ga2O3 Lateral Power MESFETs with Enhanced Breakdown Performance using Gate-Pad Connected Field Plate Design”, In Lester Eastman Conference (LEC) 2021. (Oral Presentation).
136. Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Carl Peterson, Fikadu Alema, George Seryogin, Andrei Osinsky, Sriram Krishnamoorthy ,”Multi-kV class MOCVD-grown β-Ga2O3 lateral MESFETs with Lateral Power Figure of Merit exceeding 300MW/cm2“, In 79th Device Research Conference (DRC) 2021. (Late News – Oral Presentation)
135. Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Daniel Shoemaker, Yiwen Song, James Spencer Lundh, Sukwon Choi, Sriram Krishnamoorthy,“MOVPE-grown β-Ga2O3 high current density (130 mA/mm) MESFET with a record metal/Ga2O3 specific contact resistance of 8.3×10-7 Ω.cm2”, In 63rd Electronics Materials Conference (EMC) 2021. (Oral Presentation)
134. Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Sriram Krishnamoorthy, “High-Mobility Low-temperature Metalorganic Vapor Phase Epitaxy-Grown (010) β-Ga2O3 Homoepitaxial Films and its Application to Realize Low-Resistance Ohmic Contacts”, In MRS Spring Meeting 2021. (Oral Presentation) (Best Paper Award – UWBG Symposium from Symposium Organizers).
133. Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Sriram Krishnamoorthy, “Ultra-Low Resistance Ohmic Contacts to (010) β-Ga2O3 enabled by Low-Temperature Metalorganic Vapor Phase Epitaxy”, In Eletronics Materials and Applications (EMA) 2021. (Oral Presentation)
132. S. Roy, A. Bhattacharyya, P. Ranga, H. Splawn, J. Leach, and S. Krishnamoorthy, “Demonstration of high permittivity oxide field plated vertical β-Ga2O3 SBD with very high edge termination efficiency”, In Lester Eastman Conference (LEC) 2021. (Oral Presentation).
131. S. Roy, A. Bhattacharyya, P. Ranga, H. Splawn, J. Leach, and S. Krishnamoorthy, “Record High BFOM (1.47 GW/cm2) Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode with Surface Breakdown Field of 5.45 MV/cm”, In 79th Device Research Conference (DRC) 2021. (Oral Presentation)
130. S. Roy, A. E. Chmielewski, A. Bhattacharyya, P. Ranga, R. Sun, M. A. Scarpulla, N. Alem, and S. Krishnamoorthy, “Growth & Characterization of In-situ Al2O3/(010) β-Ga2O3 Interface”, In 63rd Electronics Materials Conference (EMC) 2021. (Oral Presentation)
129. P. Ranga, A. Bhattacharyya, A. Chmielewski , R. Sun , S. Roy , M. Scarpulla , N. Alem and S. Krishnamoorthy, “Growth and Characterization of MOVPE-Grown Low Sheet Resistance β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructure Channels”, In MRS Spring Meeting 2021. (Oral Presentation)
128. R. Sun , A. Bhattacharyya , C. Hou , M. Allen , S. Krishnamoorthy and M. Scarpulla, “Temperature Dependent Current Stress of β-Ga2O3 Schottky Devices”, In 63rd Electronics Materials Conference (EMC) 2021. (Oral Presentation)
127. P. Ranga , A. Bhattacharyya , A.Chmielewski , S. Roy , R. Sun , M. Scarpulla, N.Alem and S. Krishnamoorthy, “Electrical Characterization of MOVPE-Grown Low Sheet Resistance β-(Alx Ga1-x)2O3/β-Ga2O3 Heterostructure Channels”, In 63rd Electronics Materials Conference (EMC) 2021. (Oral Presentation)
126. P. Ranga*, A. Bhattacharyya*, A. Chmielewski, S. Roy, R. Sun, M. A. Scarpulla, N. Alem and S. Krishnamoorthy, “Metalorganic Vapor-Phase Epitaxy Growth and Characterization of low sheet resistance β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructure Channels”, In Eletronics Materials and Applications (EMA) 2021. (Oral Presentation)
125. R. Sun, Y. K. Ooi, P. Ranga, A. Bhattacharyya, S. Krishnamoorthy and M. A. Scarpulla, “Oxygen annealing induced changes in defects within (010) β-Ga2O3 epitaxial films measured using photoluminescence”, In Eletronics Materials and Applications (EMA) 2021. (Oral Presentation)
124. R. Sun, A. Bhattacharyya, M. Saleh, K. Lynn, S. Krishnamoorthy and M. Scarpulla, “Defect properties of SiO2/β-Ga2O3 metal oxide semiconductor capacitors”, 31st International Conference on Defects in Semiconductors, July 2021, Virtual, Norway. (Oral Presentation)
2020
123. Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Sriram Krishnamoorthy,”Selective Area Regrown Low Resistance Ohmic Contacts on β-Ga2O3 Epitaxial Layers using Metalorganic Vapor Phase Epitaxy”, In 62nd Electronics Materials Conference (EMC) 2020. (Oral Presentation)
122. Arkka Bhattacharyya*, Praneeth Ranga*, Saurav Roy, Sriram Krishnamoorthy, "High-Density Electron Gas β-Ga2O3 Field Effect Transistors with Metalorganic Vapor Phase Epitaxy-Regrown Ohmic Contacts", In 78th Device Research Conference (DRC) 2020. (*equal contribution). (Oral Presentation)
121. S. Roy, A. Bhattacharyya, and S. Krishnamoorthy, “Design and Simulation of β-Ga2O3 Schottky Barrier Diode with p-type III-Nitride Guard Ring for Enhanced Breakdown”, In 78th Device Research Conference (DRC) 2020. (Oral Presentation)
120. S. Roy, A. Bhattacharyya, and S. Krishnamoorthy, “Improving the BV-Ron trade-off of β-Ga2O3 vertical Schottky barrier diode Using Dielectric Superjunction”, In 78th Device Research Conference (DRC) 2020, 2020. (Poster)
119. J. Cooke, L. Ghadbeigi, R. Sun, A. Bhattacharyya, Y. Wang, M. A. Scarpulla, S. Krishnamoorthy, and B. Sensale-Rodriguez. "Large-area nanometer-thin β-Ga2O3 films synthesized via oxide printing of liquid metal gallium." In UV and Higher Energy Photonics: From Materials to Applications 2020, vol. 11466, p. 1146606. International Society for Optics and Photonics, 2020.
118. J. Cooke, L. Ghadbeigi, R. Sun, A. Bhattacharyya, M. Scarpulla, S. Krishnamoorthy and B. Sensale Rodriguez, “Synthesis and Characterization of Large-Area Nanometer-Thin β-Ga2O3 Films from Oxide Printing of Liquid Metal Gallium”, In 62nd Electronics Materials Conference (EMC) 2020. (Oral Presentation)
117. B. A. Eisner, P. Ranga, A. Bhattacharyya, S. Krishnamoorthy and M. Scarpulla “Characterization of β-Ga2O3 MOVPE Homoepitaxial Thin Films Grown on (-201) and (010) Substrates—Charge Compensation and Depletion in (-201) Films”, In 62nd Electronics Materials Conference (EMC) 2020. (Oral Presentation)
116. R. Sun , Y. K. Ooi , A. Bhattacharyya , M. Saleh , S. Krishnamoorthy , K. Lynn. and M. Scarpulla, “Defects Properties of VGF Grown Zr-Doped Ga2O3 by Deep Level Transient Spectroscopy and Photoluminescence”, In 62nd Electronics Materials Conference (EMC) 2020. (Oral Presentation)
115. P. Ranga , A. Bhattacharyya , S. Roy , Y. K. Ooi , M. Scarpulla , D. Feezell and S. Krishnamoorthy, “High-Density Degenerate Electron Gas (1013 cm-2) in β-(Alx Ga 1-x)2O3/ β-Ga2O3 Heterostructures Grown By Metalorganic Vapor Phase Epitaxy”, In 62nd Electronics Materials Conference (EMC) 2020. (Oral Presentation)
2019
114. Sriram Krishnamoorthy, Praneeth Ranga, and Arkka Bhattacharyya, "High Density Electron Gas in Ultrawide Bandgap Oxide Heterostructures Towards High Power and High Frequency Electronics (Invited Talk)"- presented by Prof. Krishnamoorthy, XXth International Workshop on Physics of Semiconductor Devices: IWPSD 2019. December 17-20, 2019. Venue: Novotel Hotel And Residences, Kolkata, India.
113. Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Sriram Krishnamoorthy, “Growth of Homoepitaxial β-Ga2O3 Films using Far Injection MOVPE Reactor”, IWGO 2019 (~ 30% acceptance rate for talks)
112. Praneeth Ranga, Ashwin Rishinaramangalam, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Daniel Feezell, Sriram Krishnamoorthy, “MOVPE-GROWN SI-DOPED β-(Al0.25Ga0.75)2O3 THIN FILMS AND HETEROJUNCTIONS”, OMVPE 2019 Late News (Presented by Prof. Krishnamoorthy)
111. Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Santosh Swain, Michael Scarpulla, Kelvin Lynn and Sriram Krishnamoorthy, “Schottky Barrier Height Engineering in β-Ga2O3 using a dielectric interlayer”, IWGO 2019 (Poster)
110. Joseph Lyman, and Sriram Krishnamoorthy, “Theoretical Investigation of Infrared Photodetection in Gallium Oxide/ Aluminum Gallium Oxide Quantum Well Structures”, IWGO 2019 (~ 30% acceptance rate for talks)
109. “Electronic Properties of Zr and Hf Doped β-Ga2O3 Single Crystals”, Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In 30th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Oral Presentation).
108. “Electronic Properties and Defect Energies in Zr-doped β-Ga2O3 Single Crystal,” Jesenovec, J., M. Saleh, S. Swain, A. Bhattacharyya, S. Krishnamoorthy, J. McCloy, K. Lynn. In 30th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Poster).
107. “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award
Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO ; Our paper on Zr doped β-Ga2O3, was featured in a review in the Compound Semiconductor Magazine: https://www.publishing.ninja/V4/page/9707/390/6/1
2018
106. Praneeth Ranga, Berardi Sensale-Rodriguez, Michael Scarpulla, Sriram Krishnamoorthy, "Low Pressure CVD Growth of N-Type Ga2O3 Thin Films Using Solid Ge Source", 2018 Materials Research Society . Conference Paper, 11/27/2018.
105. Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, " Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures", Materials Research Society (MRS) Fall meeting (2018). Conference Paper, Presented, 11/26/2018.
104. Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, "Modeling of 2DEG Formation at Polar ε-(AlGa) 2O3/ε-Ga2O3 Heterojunctions", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Presented, 10/13/2018.
103. Praneeth Ranga*, Vivek Sattiraju, Jonathan Ogle, Berardi Sensale-Rodriguez, Luisa Whittaker-Brooks, Michael Scarpulla, Sriram Krishnamoorthy, "N-type Doping in LPCVD-grown β-Ga2O3 Films using Solid Source Dopants", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Presented, 10/12/2018.
102. Joseph Lyman*, Sriram Krishnamoorthy,"Intersubband Optical Transitions in Ultra-Wide Bandgap Quantum Well Structures", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Presented, 10/12/2018.
101. Sriram Krishnamoorthy et.al. Ge and Si-doped LPCVD-grown β- Ga2O3 Thin Films; 3rd US Workshop on Gallium Oxide (GOX 2018) Presented, 08/15/2018.
100. Gopalan P., Chanana A., Krishnamoorthy S., Nahata A., Scarpulla M. & Sensale-Rodriguez B. (2018). Ultrafast terahertz modulator based on metamaterial-integrated WSe2 thin-films. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. Vol. 2018-September
99. Yunshan Wang , Peter Dickens , Xiaojuan Ni , Emmanuel Lotubai , Samuel Sprawls , Feng Liu , Sriram Krishnamoorthy , Steve Blair , Kelvin Lynn , Michael Scarpulla and Berardi Sensale Rodriguez, “Photoluminescence from β-Ga2 O3 Bulk Crystals—Spectral Dependences on Incident Wavelength and Polarization”, Electronic Materials Conference 2018.
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Conference Presentations Based on Work done on Graduate Work and Post-doctoral Work
98. Zhanbo Xia , Chandan Joishi, Sriram Krishnamoorthy , Sanyam Bajaj , Yuewei Zhang , Mark Brenner, Saurabh Lodha and Siddharth Rajan, “DC and RF Characteristics of Submicron Delta‐Doped β‐Ga2 O3 Field Effect Transistors”, Electronic Materials Conference 2018.
97. Prashanth Gopalan, Ashish Chanana, Sriram Krishnamoorthy, Ajay Nahata, Michael Scarpulla and Berardi Sensale Rodriguez,” Exploring Transient Terahertz Carrier Dynamics in LargeArea WSe2 Thin Films”, Electronic Materials Conference 2018.
96. Hantian Gao , Nick Pronin , Shreyas Muralidharan , Rezaul Karim , Susan M. White , Thaddeus J. Asel , Geoffrey M. Foster , Sriram Krishnamoorthy , Siddharth Rajan , Lei Cao , Holger von Wenckstern , Marius Grundmann , Hongping Zhao , Buguo Wang and Leonard Brillson,” Native Point Defect Identification and Control in Ga2 O3 “, Electronic Materials Conference 2018
2017
95. Zhanbo Xia, Sriram Krishnamoorthy, Chandan Joishi, Sanyam Bajaj, Yuewei Zhang, Mark Brenner, Saurabh Lodha, Siddharth Rajan,” Delta-Doped β-Ga2O3 Field Effect Transistors with Patterned Regrown Ohmic Contacts”, MRS (Fall) 2017
94. Choong Hee Lee, Sriram Krishnamoorthy, Pran K. Paul, Dante J. O'Hara, Mark R. Brenner, Roland K. Kawakami, Aaron. R. Arehart, Siddharth Rajan, “Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy”, NAMBE 2017 (BEST PAPER AWARD).
93. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong, Siddharth Rajan, “High efficiency tunnel-injected UV LEDs”, NAMBE 2017.
92. Zhanbo Xia, Sriram Krishnamoorthy, Chandan Joishi, Sanyam Bajaj, Yuewei Zhang, Jared Johnson, Mark Brenner, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan, “(Al0.2Ga0.8)2O3/ Ga2O3 Modulation-doped Field Effect Transistor with regrown contacts”, NAMBE 2017.
91. Dante J O'Hara, Tiancong Zhu, Amanda Hanks, Adam Ahmed, Choong Hee Lee, Mark R. Brenner, Sriram Krishnamoorthy, Roberto C. Myers, Siddharth Rajan, David W. McComb, Roland K. Kawakami, ”Room Temperature Ferromagnetism In Manganese Selenide Layers Grown By Molecular Beam Epitaxy”, NAMBE 2017.
90. Zhanbo Xia, Sriram Krishnamoorthy, Siddharth Rajan and Mark Brenner, “Demonstration of a β-(AlGa)2 O3 / Ga2 O3 Heterojunction Field Effect Transistor”, 59th Electronic Materials Conference, 2017.
89. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew A. Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, “Tunnel-Injected Sub-260 nm Ultraviolet Light Emitting Diodes”, 59th Electronic Materials Conference, 2017.
88. Choong Hee Lee, Sriram Krishnamoorthy and Siddharth Rajan, “MBE Grown 2D Semiconductor/GaN Heterojunction”, 59th Electronic Materials Conference, 2017.
87. Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Sohel S., Krishnamoorthy S., Meyer D. & Rajan S. Small-signal characteristics of graded AlGaN channel PolFETs. Device Research Conference DRC 2017.
86. Z. Xia, S. Krishnamoorthy, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, and S. Rajan, “Delta-doped β-Ga2O3 Metal Semiconductor Field Effect Transistors with Regrown Ohmic Contacts”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
85. S. Krishnamoorthy, Z. Xia, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, and S. Rajan “Towards Modulation-doped β-(AlGa)2O3/ Ga2O3 Field Effect Transistors for High Frequency Electronics”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
84. A.S. Pratiyush, S. Krishnamoorthy, S.V. Solanke, Z. Xia, R. Muralidharan, S. Rajan, and D.N. Nath,” Carrier transport and spectral responsivity studies in MBE Grown β-Ga2O3 MSM Solar-Blind Deep-UV Photodetector”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
83. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Jared M.Johnson, Andrew Allerman, Michael W.Moseley, Andrew Armstrong, Jinwoo Hwang, and Siddharth Rajan, “Reflective Metal/Semiconductor Tunnel Junctions for AlGaN UV LEDs”, ISSLED 2017- 11th International Symposium on Semiconductor Light Emitting Devices (Best Paper Award)
82. Sriram Krishnamoorthy et.al. “Modulation-doped Gallium Oxide Heterostructures”, WOCSEMMAD 2017 (Invited)
2016
81. Sriram Krishnamoorthy et.al. “Delta-doped β-Ga2O3 Field Effect Transistor with ID,MAX = 238 mA/mm”, ISDRS 2016, Bethesda, MD.
80. Sriram Krishnamoorthy , Yuewei Zhang, Edwin Lee, Choong Hee Lee, William D. McCulloch, Jared M.Johnson, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, ” Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions”, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
79. Fatih Akyol et.al. ” Ultra‐Low Resistance GaN/InGaN/GaN Tunnel Junctions with Indium Content < 15%", International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
78. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, ”III‐Nitride Tunneling Hot Electron Transistors with Current Gain above 10″, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
77. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan, “Ultra‐Wide Bandgap AlGaN Channel MISFET with Low‐Resistance Ohmics”, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
76. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal‐Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, “Engineering of Hole Transport in Tunneling Injected UV‐A LEDs “, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
75. Siddharth RAJAN, Yuewei ZHANG, Fatih AKYOL, Sriram KRISHNAMOORTHY, “Tunnel Junctions for Next-Generation Visible and UV Optoelectronics (Invited)”, International Union of Materials Research Societies (IUMRS)- IECM 2016, Singapore.
74. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, “High Current Density p-MoS2/n-GaN Inter-Band 2D/3D Tunnel Junctions”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
73. Sriram Krishnamoorthy, Yuewei Zhang, Edwin Lee, Choong Hee Lee, William McCulloch, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, “Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions “, International Workshop on Nitride Semiconductors (IWN 2016).
72. Edwin W. Lee, William D. McCulloch, Choong Hee Lee, Sriram Krishnamoorthy, Yiying Wu and Siddharth Rajan, “Layered 2H-MoS2/GaN Hot Electron Transistor”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
71. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy,Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan, “Heterostructure Engineered Ohmic Contacts to Ultra-Wide Bandgap AlGaN “, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
70. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang and Siddharth Rajan, “Ultra-Low Resistance GaN Tunnel Homojunctions with Repeatable Differential Resistance and 150 kA/cm2 Current”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
69. Choong Hee Lee, Sriram Krishnamoorthy,Dante J. O’Hara, Roberto C. Myers, Roland K. Kawakami and Siddharth Rajan,”Molecular Beam Epitaxy of GaSe on c-Sapphire(0001) Using Valved Se Cracking Source”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
68. S. Bajaj et.al. Ultra-Wide Bandgap AlGaN Channel MISFETs with Polarization Engineered Ohmics, 74th Device Research Conference (DRC), Newark, Delaware.
67. Current Gain above 10 in sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors with GaN/AlN Emitter, 74th Device Research Conference (DRC), Newark, Delaware.
66. Z. Yang et.al. Current Gain Above 10 in III-Nitride Tunneling Hot Electron Transistor, 2016 Lester Eastman Conference on High Performance Devices
65. S. Bajaj et.al. Heterostructure-Engineered Ohmics-based UBWG Al0.75Ga0.25N Channel MISFET, 2016 Lester Eastman Conference on High Performance Devices
64. Y. Zhang et.al. Graded p-AlGaN superlattice for reduced electron overflow in tunneling injected UVC LEDs, 2016 Lester Eastman Conference on High Performance Devices
63. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, ”MoS2/ GaN Inter-band Tunnel Junctions (2D / 3D Tunnel Junctions)”, WOCSEMMAD 2016 (Workshop on Compound Semiconductor Materials and Devices).
2015
62. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Polarization engineered Al0.55Ga0.45N tunnel junctions for ultraviolet emitters”, 11th International Conference on Nitride Semiconductors (ICNS-11), August 30th – September 4th, 2015, Beijing, China.
61. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B.Khurgin, and Siddharth Rajan, “Quasi-ballistic transport in AlGaN/GaN tunneling hot electron transistors”, 11th International Conference on Nitride Semiconductors (ICNS-11), August 30th – September 4th, 2015, Beijing, China.
60. Emre Gür,Fatih Akyol,Sriram Krishnamoorthy, Siddharth Rajan, and Steven A. Ringel, “Defects in N-Rich and In-Rich InxGa1-XN: In Composition Dependence”, 11th International Conference on Nitride Semiconductors (ICNS-11), August 30th – September 4th, 2015, Beijing, China.
59. Sriram Krishnamoorthy, Yuewei Zhang, Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan,” UV Tunnel Junction LEDs” WOCSEMMAD 2015 (Workshop on Compound Semiconductor Materials and Devices) February 16-19, 2015
58. Sanyam Bajaj, Omor F Shoron, Pil Sung Park, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Shahed Reza, Eduardo M Chumbes, Jacob B Khurgin and Siddharth Rajan, “Density-Dependent Electron Transport for Accurate Modeling of AlGaN/GaN HEMTs”, 73rd Device Research Conference (DRC), June 21-24, 2015.
57. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, “Modeling and Experimental Demonstration of Sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors”, 73rd Device Research Conference (DRC), June 21-24, 2015.
56. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan,”Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs”, 73rd Device Research Conference (DRC), June 21-24, 2015 .
55. Edwin Lee, II, Choong Hee Lee, Pran Paul, Sriram Krishnamoorthy, Lu Ma, Yiying Wu, Aaron Arehart and Siddharth Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015 .
54. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan,” Tunnel Junctions for III-Nitride Ultraviolet Optoelectronics” (Invited), 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015 .
53. Edwin W.Lee, Choong Hee Lee, Pran K. Paul, Sriram Krishnamoorthy,Lu Ma, Yiying Wu, Aaron Arehart and Siddharth Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
52.Sanyam Bajaj,Omor F. Shoron, Fatih Akyol, Sriram Krishnamoorthy, Ting-Hsiang Hung, Jacob Khurgin and Siddharth Rajan, “Field and Electron Density Dependence of 2-Dimensional Electron Gas Velocity in GaN”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
51. Yuewei Zhang, Sriram Krishnamoorthy,Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang and Siddharth Rajan, “Tunneling Injection of Holes in III-Nitride Ultraviolet Emitters “, 57TH Electronic Materials Conference June 24 – 26, 2015 .
50. Fatih Akyol, Sriram Krishnamoorthy,Yuewei Zhang and Siddharth Rajan, “3-Junction GaN Bipolar Cascade LEDs with Low On-Resistance”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
49. Choong Hee Lee, Lu Ma, Sriram Krishnamoorthy, Edwin Lee, Yiying Wu and Siddharth Rajan,”Transferred Large-Area Single Crystal MoS2 Field Effect Transistors”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
2014
48. Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan “III-nitride tunnel junctions (Invited Paper)”, SPIE Photonics West OPTO, San Franscisco, CA.
47. Fatih Akyol, Sriram Krishnamoorthy and Siddharth Rajan, “Cascading Nitride light emitting diodes using low-resistance InGaN tunnel junctions”, Lester Eastman Conference on High Performance Devices, Aug 5-7, 2014
46. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan, “Design of Ga-polar low resistance polarization engineered GaN/InGaN tunnel junctions”, Electronic Materials Conference 2014, Santa Barbara, CA.
2013
45. Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, “Tunnel Junctions for efficient III Nitride Optoelectronics (Invited Talk)”, International Union of Materials Research Society, International Conference in Asia – 2013 (IUMRS-ICA 2013).
44. Sriram Krishnamoorthy , Fatih Akyol, Siddharth Rajan “III-Nitride Tunnel Junction Devices (Invited)”, National Workshop on III- Nitrides Materials and Devices, Solid State Physics Lab, SSPL,New Delhi.
43. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, “Tunnel Junctions for Efficient III- nitride Optoelectronics”, 17th International Workshop on The Physics of Semiconductor Devices, December 10-13, 2013, Noida, India.
42. Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, “III-Nitride Tunnel Junctions: Devices and Applications (Invited Paper)”, International Semiconductor Device Research Symposium(ISDRS 2013).
41. Fatih Akyol,Sriram Krishnamoorthy, Siddharth Rajan , “Overcoming Nitride Light Emitting Diode Efficiency Droop by Tunneling Based Carrier Regeneration”, International Semiconductor Device Research Symposium (ISDRS 2013).
40. Ting-Hsiang Hung ;Krishnamoorthy, S. ; Nath, D.N. ; Pil Sung Park ; Rajan, S., ” Interface charge engineering in GaN-based MIS-HEMTs”, 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Columbus, OH.
39.Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, “III-Nitride Tunnel Junctions: Device Engineering and Applications (Invited)”, 10th Topical Workshop on Heterostructure Microelectronics September 2-5, 2013 in Hakodate, Japan
38.Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, “Tunnel Injection of Holes in GaN using GdN/GaN heterojunction”, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
37.Tyler A Growden, Sriram Krishnamoorthy, Siddharth Rajan and Paul Berger, ” Record High Current Density ( 776 kA/cm2) InGaN/GaN Resonant Tunneling Diodes Using Polarization Induced Barriers”, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
36. Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, “Electrical Characterization of MoS2/GaN Heterojunctions”, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
35. Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan,” Interface charge and electron transport in GaN- Based MIS-HEMTs “, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
34. Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, “Growth and Electrical Characterization of MoS2/GaN Heterojunctions”, Electronic Materials Conference 2013, South Bend, IN.
33. Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy,Edwin Lee II, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan,” Single Crystal (0001) Oriented MoS2 by CVD, Electronic Materials Conference 2013, South Bend, IN.
32. Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan,”Interface charge effects on electron transport in Al2O3/AlGaN/GaN”, Electronic Materials Conference 2013, South Bend, IN
31. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, “Incorporation of GaN/InGaN and GdN/GaN tunnel junctions in commercial III-nitride LEDs”, Electronic Materials Conference 2013, South Bend, IN .
30.Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, “Efficient hole injection in GdN/GaN heterojunction”, Electronic Mateials Conference 2013, South Bend, IN .
29. Yang, Jie;Cui, Sharon ; Ma, T.P. ; Hung, Ting-Hsiang ; Nath, Digbijoy ;Krishnamoorthy, Sriram ; Rajan, Siddharth, “Determination of trap energy levels in AlGaN/GaN HEMT”, Device Research Conference (DRC), South Bend, IN.
28. Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan,”Interfacial Charge Properties of Atomic Layer Deposited Dielectric/III-nitride Interfaces”, MRS Spring meeting 2013, San Fransisco, CA.
27. Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan,”Study of Interfacial Charge Properties and Engineering of Atomic Layer Deposited Dielectric/III-nitride Interfaces”, CS Mantech 2013, New Orleans.
26. Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan,”CVD-grown Single Crystal Layered MoS2″, MRS Spring meeting 2013, San Fransisco, CA.
2012
25. Probing Electrically Active Traps in AlGaN/GaN HEMT by Inelastic Electron Tunneling Spectroscopy, J. Yang, S. Cui, X. Sun, Z. Liu, T. P. Ma, T. H. Hung, D. Nath, S. Krishnamoorthy, and S. Rajan, 43rd IEEE Semiconductor Interface Specialists Conference December 6-8, 2012, San Diego, CA
24. “III-nitride tunnel junctions: device engineering and applications” , S. Krishnamoorthy, F. Akyol, J.Yang, P.S.Park, R. C. Myers, and S. Rajan, International Workshop on Nitride Semiconductors 2012,October 14-19, 2012, Sapporo, Japan.(Invited talk delivered by Prof. Rajan)
23. S. Krishnamoorthy , F. Akyol, J. Yang, P. Sung Park, R. Myers, S.Rajan,”Efficient Tunneling in Wide Bandgap III-Nitride Semiconductors”, 29th North American Conference on Molecular Beam Epitaxy (NAMBE 2012), Stone Mountain Park, Georgia October 14-17, 2012.
22.Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan,”III-Nitride Interband Tunneling Devices” IEEE Lester Eastman Conference on High Performance Devices, Brown University, Aug 7-9 2012 (Talk Delivered by Prof. Rajan)
21. Sriram Krishnamoorthy , Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, “GdN nano-islands enabled inter-band tunneling in III- Nitrides “, Electronic Materials Conference (EMC), June 2012
20. Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, “Record low tunnel junction specific resistivity (< 3X10^-4 Ohm cm^2) in GaN inter-band tunnel junctions “, Device Research Conference (DRC), 2012 69th Annual , June 2012
19. Tyler A. Growden, Sriram Krishnamoorthy, Digbijoy Nath, Anisha Ramesh, Siddharth Rajan, and Paul R. Berger, ?Methods for Attaining High Interband Tunneling Current in III-Nitrides?, 70th Device Research Conference, June 18-20, 2012, University Park, PA (USA)
18. Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy , Pil Sung Park and Siddharth Rajan, “The Efficiency Droop Characteristics of Reversed Polarization (N-polar) GaN Light Emitting Diodes (LEDs)”, 54th Electronic Materials Conference, June 20-22, 2012 University Park, PA (USA)
17. Ting-Hsiang Hung, Michele Esposto, Digbijoy Nath, Sriram Krishnamoorthy, Pil Sung Park and Siddharth Rajan, “Study of the interface properties of Atomic Layer Deposited (ALD) Al2O3 on different polarity of GaN with post metal annealing (PMA)”, 54th Electronic Materials Conference, June 20-22, 2012 University Park, PA (USA)
16.Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan , Jing Yang, Roberto Myers, Limei Yang, Michael Mills, “ Tunneling in III- Nitride Semiconductors“, Workshop on Compound Semiconductor Materials and Devices, 2012, Napa Valley, GA, USA ( Invited talk delivered by Prof. Rajan)
2011
15. Sriram Krishnamoorthy, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, “Enhanced Tunneling in GaN p-n Junctions Using Ultra-thin GdN Layers“, MRS Fall meeting Nov 28-Dec 2, 2011, Boston, MA (USA)
14. Michele Esposto, Sriram Krishnamoorthy ,Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, “Study of Interface Barrier of ALD deposited Al2O3/GaN”, MRS (Materials Research Society)Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)
13. Sriram Krishnamoorthy, Digbijoy Nath, Sanyam Bajaj, and Siddharth Rajan, “ Inter-band GaN/InGaN/GaN tunnel diodes“, AVS 2011, TN
12. Michele Esposto, Sriram Krishnamoorthy , Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, “Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride“, AVS (American Vacuum Society)58th International Symposium, Oct 31-Nov 4, 2011, Nashville, TN (USA)
11. Sriram Krishnamoorthy, Pil Sung Park , and Siddharth Rajan , “III-Nitride Tunnel Diodes with Record Forward Tunnel Current Density” ,69th Device Research Conference (Late News), UC Santa Barbara, 2011.
10. Sriram Krishnamoorthy, Aaron Arehart, Digbijoy Nath, Fatih Akyol,Pil Sung Park, Michele Esposto, Steve Ringel, Siddharth Rajan, “Enhanced Inter-band tunneling by polarization engineering in InGaN/GaN quantum wells“, lectronic Materials Conference 2011, UC Santa Barbara, CA
9. Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, “Flattened transconducatance in highly scaled AlGaN/GaN HEMTs”, International Conference on Nitride Semiconductors (ICNS9) 2011, Glasgow, UK
8. Prashanth Ramesh, Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan, and Gregory Washington” Fabrication and Characterization of Gallium Nitride Unimorphs for Optical MEMS Applications” , ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems SMASIS2011
7. Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, Siddharth Rajan,“Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMTUsing a Polarization-Induced 2D/3D Hybridized Channel Design”, Electronic Materials Conference EMC 2011
6. Emre Gur, Sriram Krishnamoorty, Zeng Zhang, Siddharth Rajan, Steven Ringel,”Defect Characterization of InGaN layer by Deep Level Transient and Optical Spectroscopies”, Electronic Materials Conference 2011
5. Siddharth Rajan, and Sriram Krishnamoorthy , “Tunneling in III-Nitrides“, Workshop on Compound Semiconductor Materials and Devices, Feb 2011, Savannah, GA, USA ( Invited talk delivered by Prof. Rajan)
2010
4. Digbijoy Nath, Sriram Krishnamoorthy , Fatih Akyol, Siddharth Rajan, “InGaN Quantum Well Devices“, Workshop on Innovative Devices and Systems (WINDS), December 2010, Hawai. (Presented by Prof. Rajan)
3. Sriram Krishnamoorthy , Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Siddharth Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel junctons“, Late Breaking News, International Workshop on Nitrides (IWN), Tampa, 2010.
2. Michele Esposto, Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy , Fatih Akyol, Valerio De Lecce, Alessandro Chini, and Siddharth Rajan, “Design of GaN HEMTs for power switching operation”, 19th European Workshop on Heterostructure Devices, Crete, Greece 2010
1. Prashanth Ramesh, Sriram Krishnamoorthy , Pil Sung Park, Siddharth Rajan, and Gregory Washington, “Distributed intelligence using gallium nitride based active devices”, SPIE Active and Passive Smart Structures and Integrated Systems, San Diego, CA 2010 (Best Student Paper & Presentation award – Third place)