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We explore and engineer next-generation (ultra)wide band gap semiconductors such as Gallium Oxide. Our efforts span epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for applications such as power electronics, high frequency electronics and ultra-violet optoelectronics.
Funding Acknowledgement
Funding Acknowledgement
We acknowledge universities, federal government funding agencies, industry and non-profit foundations for supporting our past and present research.
University of California- Santa Barbara
National Science Foundation (NSF)Â
Coherent/II-VI Foundation
Department of Energy- Advanced Research Projects Agency-Energy (ARPA-E)
Air Force Office of Scientific Research (AFOSR)
Department of Defense- Microelectronics Commons
University of Utah
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