Group News
GROUP NEWS
November 2023 - Arkka Bhattacharyya won the "Outstanding Postdoctoral Researcher Award 2022-2023" in the 9th Annual Solid-State Lighting and Energy Electronics Center (SSLEEC) Annual Review conference held in UCSB on Nov 9, 2023 for his work on "MOCVD-grown Record Electron Mobility Homoepitaxial β Ga2O3 Films for Lateral and Vertical Power Devices"
Saurav Roy won the "Outstanding Graduate Student Research Achievement Award 2022-2023" in the 9th Annual SSLEEC Annual Review conference held in UCSB on Nov 9, 2023 for his work on "Beta Gallium Oxide High Voltage Vertical Schottky Barrier Diode with Reduced Conduction and Switching Power Losses"
Congratulations to Saurav, Arkka and co-authors/collaborators!
August 2023 - Saurav Roy won the best student poster presentation (sponsored by Applied Physics Letters) at the 6th US Gallium Oxide Workshop (GOX) held at University at Buffalo Campus, Buffalo, New York (August 13-16, 2023), for his work "Dielectric Lifetime Enhancement of in-situ MOCVD Al2O3 on βGa2O3 Using Temperature Modulated Deposition". Congratulations Saurav!
Saurav Roy was also a finalist for the best student oral presentation award, coming a close second, at GOX 2023, for his work "Large Area Trench β-Ga2O3 Schottky Barrier Diode with Extreme-K Dielectric RESURF". Well done Saurav!
July 2023 - Agnitron Agilis MOCVD system for Gallium Oxide epitaxy installed in Henley Hall 3113 (UWBG Semiconductors Lab)! Many thanks to Brian Carralejo @ MOCVD lab (SSLEEC), Prof. DenBaars for all the help! We are very thankful to the SSLEEC staff Brian Carralejo, David Whitlatch for the discussions and insights.
https://compoundsemiconductor.net/article/117228/Agnitron_installs_MOCVD_systems_at_two_universities
June 2023- Carl Peterson receives the Bright Horizon Global Foundation Materials Department Service Award, recognized "for exceptional contributions to mentoring students across educational backgrounds". Congratulations Carl!
June 2023- Saurav Roy selected as a finalist for the 2023 65th Electronic Materials Conference Student Oral Presentation Award. Saurav will present his work on " Enhancing the Dielectric Performance of Al2O3 on β-Ga2O3 Using Temperature Modulated In Situ Dielectric Deposition".
May 2023- Arkka Bhattacharyya recieved the college of engineering (University of Utah) outstanding dissertation award. Congratulations!
Oct 27, 2022- Arkka Bhattacharyya won the "Young Researcher Paper Award" (Outstanding oral presentation award) at the International Workshop on Gallium Oxide and Related Materials 2022 (IWGO-4), Oct 22-27 2022, Nagano, Japan.
Congratulations Arkka! Well deserved!
Arkka presented record breaking results at the workshop
Si-doped channel with LT buffer with record high Hall and field-effect mobilities
Multi-kV fin-shape β-Ga2O3 power transistors with VBR of 1.13 kV to ~ 3kV
Tri-Gate β-Ga2O3 transistors with record high PFOM of 0.95 GW/cm2
Tri-Gate β-Ga2O3 transistors with record estimated Switching FOM
Ron.Qg of 640 mΩ.nC @ VBR of 1.1 kV
https://www.ece.utah.edu/2023/01/05/ece-alumni-receives-young-researcher-award/
Oct 3, 2022- Carl Peterson (UCSB) and Fikadu Alema's (Agnitron) co-first authored EDL paper on record contact resistance to Gallium Oxide and Aluminum Gallium Oxide selected as Editor's pick in Oct 2022 issue of IEEE Electron Device Letters. Congrats Carl, Fikadu and team!
Aug 31,2022- Saurav Roy selected to receive the Institute of Energy Efficiency (IEE) Excellence in Research Fellowship 2022-2023. Congrats Saurav! Well deserved!
https://engineering.ucsb.edu/news/institute-energy-efficiency-awards-graduate-fellowships
Feb 2022- Prof. Sriram Krishnamoorthy has received the "Most Valuable Presentation" award at the Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD) 2022. WOCSEMMAD is a premier invitation-only workshop in the US on high performance electronic materials and devices.
July 2021- Our group moved to UCSB Materials! Professor Sriram Krishnamoorthy is an inaugural recipient of the Mehrabian Career Development Chair.
https://materials.ucsb.edu/news/ucsb-materials-welcomes-assistant-professor-sriram-krishnamoorthy
Press Coverage
18. Taking Taking Ga₂O₃ to the next level- 18th April 2023
https://compoundsemiconductor.net/article/116550/Taking_Ga%E2%82%82O%E2%82%83_to_the_next_level
17. High-voltage Ga₂O₃ Transistors Surpass Silicon Limit- 30th June 2022
16. Gallium oxide beats silicon power limit (semiconductor-today.com)- 9th June 2022
https://semiconductor-today.com/news_items/2022/jun/ucsb-090622.shtml
15. Optimising gallium oxide growth How do you produce great gallium oxide power devices? It’s a combination of excellent reactor design, ideal precursors and dopants, a partner material for forming heterostructures, and good dielectrics and contacts.- 3rd March 2022
https://compoundsemiconductor.net/article/114324/Optimising_Gallium_Oxide_Growth
14. Lateral Gallium Oxide MESFETs Power Ahead- 14th October 2021 https://compoundsemiconductor.net/article/113716/Lateral_gallium_oxide_MESFETs_power_ahead_
13. Improving Ohmic Contacts For Ga2O3, Compound Semiconductor Magazine- 22nd September 2021 https://compoundsemiconductor.net/article/113643/Improving_ohmic_contacts_for_Ga2O3
12. “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO ; Our paper on Zr doped β-Ga2O3, was featured in a review in the Compound Semiconductor Magazine: Lead authors from Washington State University https://www.publishing.ninja/V4/page/9707/390/6/1
11. Equipping MOCVD Tools With Dual Use Capability, April 2019 https://compoundsemiconductor.net/article/106963/Equipping_MOCVD_Tools_With_Dual_Use_Capabili ty May 2019 https://www.designworldonline.com/how-to-create-a-dual-use-mocvd-platform/
10. U Engineers Start Study on Better High-Voltage Electronics, Dec 2018 https://dailyutahchronicle.com/2018/12/24/u-engineers-start-study-on-better-high-voltage- electronics/ University of Utah engineers will study better semiconductor material for high-voltage electronics, Dec 2018 https://phys.org/wire-news/305351013/university-of-utah-engineers-will-study-better-semiconductor-mat.html https://slenterprise.com/index.php/news/latest-news/2391-uofu-engineers-study-better-semiconductor-material-for- high- voltage-electronics
9. Layered 2D dichalcogenides grow on 3D semiconductors May 2017 http://nanotechweb.org/cws/article/tech/68868
8. Quantum tunneling boosts UV LED efficiency , April 2016 http://www.compoundsemiconductor.net/pdf/magazines/2016/csApril2016_2.pdf
7. “Band engineering for improved photo-electro-chemical etch”, Semiconductor Today, 14th July 2014. http://www.semiconductor-today.com/news_items/2014/JUL/OSU_140714.shtml
6. “Epitaxial cascading of LEDs to tackle efficiency droop”, Compound Semiconductor, 25th September 2013. http://www.compoundsemiconductor.net/article/-Epitaxial-cascading-of-nitride-LEDs-overcomes-efficiency- droop.html
5. “Tunneling to avoid efficiency droop in nitride semiconductor LEDs”, Semiconductor Today, 30th August 2013. http://www.semiconductor-today.com/news_items/2013/AUG/OSU_300813.html
4. “Lowering tunneling resistance in GaN/InGaN/GaN structures”, Semiconductor Today, 3rd April 2013. http://www.semiconductor-today.com/news_items/2013/APR/OSU_030413.html
3. “Flattening transconductance profiles in nitride HEMTs”, Semiconductor Today, 23rd February 2012. http://www.semiconductor-today.com/news_items/2012/FEB/OSU_220212.html
2. “Reversing polarization to tackle overshoot and droop”, Semiconductor Today, 30th March 2012. http://www.semiconductor- today.com/news_items/2012/MAR/OSU_290312.html
1. “Ohio boosts nitride tunneling current to 118 A/cm2 at -1 V”, Semiconductor Today, 24th November 2010. http://www.semiconductor-today.com/news_items/2010/NOV/OHIO_241110.htm