Quantum dot laser for silicon photonics integration
Quantum dot laser for silicon photonics integration
funded by 연구재단 NRF 글로벌매칭형-영국 과제 2024-2027
funded by KIST 신규선임과제 2019
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Monolithic integration of III-V quantum dot lasers onto Si substrate is a scalable and reliable approach for obtaining highly efficient light sources for Si photonics. Recently, a combination of optimized GaAs buffers and QD gain materials resulted in monolithically integrated butt-coupled lasers on Si. In the lab, we put continuous efforts to realize high performance 1.3 micron QD lasers integrated onto various III-V/Si platforms for seamlessly coupled silicon photonics.
1.3 micron QD lasers grown and fabricated at KIST
Graphene/Quantum Dot for mixed-dimensional optoelectronic devices
Graphene/Quantum Dot for mixed-dimensional optoelectronic devices
funded by National Research Foundation (NRF 우수신진과제) 2021-2023
Integration of 2D materials and 0D QD is a promising route to improved material functionalities. Underlying the improved properties are alterations in carrier dynamics in such mixed-dimensional heterostructures. In this project, we aim to explore novel functions between QD and graphene due to their strong interactions such as a carrier redistribution and supply channels. We find that the PL enhancements up to 13 times from the graphene/InAs QD heterostructure is possible at room temperatures where devices operate. This finding advances the understanding of 2D graphene/0D QD heterostructures and can aid the design of mixed-dimensional future optoelectronic devices.
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